AT374975B - Oszillator - Google Patents
OszillatorInfo
- Publication number
- AT374975B AT374975B AT0358975A AT358975A AT374975B AT 374975 B AT374975 B AT 374975B AT 0358975 A AT0358975 A AT 0358975A AT 358975 A AT358975 A AT 358975A AT 374975 B AT374975 B AT 374975B
- Authority
- AT
- Austria
- Prior art keywords
- oscillator
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
- H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5211974A JPS5718710B2 (de) | 1974-05-10 | 1974-05-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
ATA358975A ATA358975A (de) | 1983-10-15 |
AT374975B true AT374975B (de) | 1984-06-25 |
Family
ID=12905973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT0358975A AT374975B (de) | 1974-05-10 | 1975-05-12 | Oszillator |
Country Status (9)
Country | Link |
---|---|
US (1) | US3955154A (de) |
JP (1) | JPS5718710B2 (de) |
AT (1) | AT374975B (de) |
CA (1) | CA1029821A (de) |
DE (1) | DE2520825C2 (de) |
ES (1) | ES437556A1 (de) |
FR (1) | FR2270712B1 (de) |
GB (1) | GB1505376A (de) |
NL (1) | NL7505426A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5718710B2 (de) * | 1974-05-10 | 1982-04-17 | ||
US4150344A (en) * | 1976-03-01 | 1979-04-17 | Siemens Aktiengesellschaft | Tunable microwave oscillator |
DE2709314C3 (de) * | 1977-03-03 | 1980-03-20 | Texas Instruments Deutschland Gmbh, 8050 Freising | HF-Verstärkerschaltung |
US7141865B2 (en) * | 2001-05-21 | 2006-11-28 | James Rodger Leitch | Low noise semiconductor amplifier |
JP2008142832A (ja) * | 2006-12-11 | 2008-06-26 | Aisho:Kk | パイプ切断機 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2822310A (en) * | 1955-04-21 | 1958-02-04 | Philips Corp | Semi-conductor device |
DE1564218A1 (de) * | 1965-12-22 | 1970-01-08 | Ibm | Verfahren zur Herstellung von Transistoren |
US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
DE2045618A1 (de) * | 1969-09-15 | 1971-03-25 | Rca Corp | Integrierte Halbleiterschaltung |
US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
GB1298375A (en) * | 1969-10-17 | 1972-11-29 | Hitachi Ltd | Method of making field effect transistors |
DE2242026A1 (de) * | 1971-08-26 | 1973-03-15 | Sony Corp | Mis-feldeffekttransistor |
DE2320563A1 (de) * | 1972-04-20 | 1973-10-25 | Sony Corp | Vierschichttriode |
BE809217A (fr) * | 1972-12-29 | 1974-04-16 | Sony Corp | Dispositif semi-conducteur |
BE809216A (fr) * | 1972-12-29 | 1974-04-16 | Sony Corp | Dispositif semi-conducteur |
DE2418560A1 (de) * | 1973-04-18 | 1974-11-14 | Sony Corp | Halbleitervorrichtung |
DE2520825A1 (de) * | 1974-05-10 | 1975-11-20 | Sony Corp | Oszillator |
FR2130399B1 (de) * | 1971-03-20 | 1977-09-02 | Philips Nv |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3822409A (en) * | 1971-06-01 | 1974-07-02 | Matsushita Electric Works Ltd | Photosensitive solid oscillator |
-
1974
- 1974-05-10 JP JP5211974A patent/JPS5718710B2/ja not_active Expired
-
1975
- 1975-04-25 CA CA225,488A patent/CA1029821A/en not_active Expired
- 1975-04-25 US US05/571,708 patent/US3955154A/en not_active Expired - Lifetime
- 1975-05-02 GB GB18509/75A patent/GB1505376A/en not_active Expired
- 1975-05-07 FR FR7514457A patent/FR2270712B1/fr not_active Expired
- 1975-05-07 NL NL7505426A patent/NL7505426A/xx not_active Application Discontinuation
- 1975-05-09 ES ES437556A patent/ES437556A1/es not_active Expired
- 1975-05-09 DE DE2520825A patent/DE2520825C2/de not_active Expired
- 1975-05-12 AT AT0358975A patent/AT374975B/de not_active IP Right Cessation
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2822310A (en) * | 1955-04-21 | 1958-02-04 | Philips Corp | Semi-conductor device |
US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
DE1564218A1 (de) * | 1965-12-22 | 1970-01-08 | Ibm | Verfahren zur Herstellung von Transistoren |
US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
DE2045618A1 (de) * | 1969-09-15 | 1971-03-25 | Rca Corp | Integrierte Halbleiterschaltung |
GB1298375A (en) * | 1969-10-17 | 1972-11-29 | Hitachi Ltd | Method of making field effect transistors |
FR2130399B1 (de) * | 1971-03-20 | 1977-09-02 | Philips Nv | |
DE2242026A1 (de) * | 1971-08-26 | 1973-03-15 | Sony Corp | Mis-feldeffekttransistor |
DE2320563A1 (de) * | 1972-04-20 | 1973-10-25 | Sony Corp | Vierschichttriode |
BE809217A (fr) * | 1972-12-29 | 1974-04-16 | Sony Corp | Dispositif semi-conducteur |
BE809216A (fr) * | 1972-12-29 | 1974-04-16 | Sony Corp | Dispositif semi-conducteur |
DE2364753A1 (de) * | 1972-12-29 | 1974-07-18 | Sony Corp | Halbleitervorrichtung |
DE2364752A1 (de) * | 1972-12-29 | 1974-08-01 | Sony Corp | Halbleitervorrichtung |
DE2418560A1 (de) * | 1973-04-18 | 1974-11-14 | Sony Corp | Halbleitervorrichtung |
DE2520825A1 (de) * | 1974-05-10 | 1975-11-20 | Sony Corp | Oszillator |
Also Published As
Publication number | Publication date |
---|---|
ES437556A1 (es) | 1977-01-16 |
GB1505376A (en) | 1978-03-30 |
US3955154A (en) | 1976-05-04 |
CA1029821A (en) | 1978-04-18 |
ATA358975A (de) | 1983-10-15 |
JPS50145087A (de) | 1975-11-21 |
JPS5718710B2 (de) | 1982-04-17 |
DE2520825C2 (de) | 1982-07-08 |
FR2270712B1 (de) | 1980-10-17 |
AU8065275A (en) | 1976-11-04 |
DE2520825A1 (de) | 1975-11-20 |
NL7505426A (nl) | 1975-11-12 |
FR2270712A1 (de) | 1975-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee | ||
ELJ | Ceased due to non-payment of the annual fee |