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AT267707B - Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität - Google Patents

Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität

Info

Publication number
AT267707B
AT267707B AT325166D AT325166D AT267707B AT 267707 B AT267707 B AT 267707B AT 325166 D AT325166 D AT 325166D AT 325166 D AT325166 D AT 325166D AT 267707 B AT267707 B AT 267707B
Authority
AT
Austria
Prior art keywords
junction
voltage
semiconductor arrangement
dependent capacitance
capacitance
Prior art date
Application number
AT325166D
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT267707B publication Critical patent/AT267707B/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/901—Capacitive junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT325166D 1965-04-07 1966-04-05 Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität AT267707B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0096402 1965-04-07

Publications (1)

Publication Number Publication Date
AT267707B true AT267707B (de) 1969-01-10

Family

ID=7520030

Family Applications (1)

Application Number Title Priority Date Filing Date
AT325166D AT267707B (de) 1965-04-07 1966-04-05 Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität

Country Status (8)

Country Link
US (1) US3411053A (de)
AT (1) AT267707B (de)
CH (1) CH447391A (de)
DE (1) DE1514431C3 (de)
FR (1) FR1473738A (de)
GB (1) GB1133634A (de)
NL (1) NL6604071A (de)
SE (1) SE321989B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3009499A1 (de) * 1979-03-12 1980-09-18 Clarion Co Ltd Halbleitervorrichtung

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506887A (en) * 1966-02-23 1970-04-14 Motorola Inc Semiconductor device and method of making same
US3523838A (en) * 1967-05-09 1970-08-11 Motorola Inc Variable capacitance diode
DE1589693C3 (de) * 1967-08-03 1980-04-03 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterbauelement mit flächenhaftem PN-Übergang
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3922710A (en) * 1971-12-17 1975-11-25 Matsushita Electronics Corp Semiconductor memory device
US3911466A (en) * 1973-10-29 1975-10-07 Motorola Inc Digitally controllable enhanced capacitor
US4005466A (en) * 1975-05-07 1977-01-25 Rca Corporation Planar voltage variable tuning capacitors
DE2807181C2 (de) * 1977-02-21 1985-11-28 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi Halbleiterspeichervorrichtung
JPS55120175A (en) * 1979-03-12 1980-09-16 Clarion Co Ltd Variable capacitance diode with plural super-capacitance variable electrode structures
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
JPS57103366A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
GB2104725B (en) * 1981-07-17 1986-04-09 Clarion Co Ltd Variable capacitance device
US4727406A (en) * 1982-02-12 1988-02-23 Rockwell International Corporation Pre-multiplexed detector array
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
GB9416900D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd A variable capacitance semiconductor diode
TWI478033B (zh) * 2012-09-07 2015-03-21 E Ink Holdings Inc 電容式觸控面板的電容結構

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL240714A (de) * 1958-07-02
NL243218A (de) * 1958-12-24
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3009499A1 (de) * 1979-03-12 1980-09-18 Clarion Co Ltd Halbleitervorrichtung

Also Published As

Publication number Publication date
DE1514431C3 (de) 1974-08-22
CH447391A (de) 1967-11-30
SE321989B (de) 1970-03-23
US3411053A (en) 1968-11-12
FR1473738A (fr) 1967-03-17
NL6604071A (de) 1966-10-10
DE1514431A1 (de) 1969-06-26
GB1133634A (en) 1968-11-13
DE1514431B2 (de) 1974-01-31

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