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AT264594B - Verfahren zum Herstellen von Metallkontakten auf Halbleiterbauelementen - Google Patents

Verfahren zum Herstellen von Metallkontakten auf Halbleiterbauelementen

Info

Publication number
AT264594B
AT264594B AT47467A AT47467A AT264594B AT 264594 B AT264594 B AT 264594B AT 47467 A AT47467 A AT 47467A AT 47467 A AT47467 A AT 47467A AT 264594 B AT264594 B AT 264594B
Authority
AT
Austria
Prior art keywords
semiconductor components
metal contacts
producing metal
producing
contacts
Prior art date
Application number
AT47467A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT264594B publication Critical patent/AT264594B/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/021Cleaning or etching treatments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
AT47467A 1966-01-19 1967-01-17 Verfahren zum Herstellen von Metallkontakten auf Halbleiterbauelementen AT264594B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1966S0101518 DE1514668B2 (de) 1966-01-19 1966-01-19 Verfahren zum herstellen von chrom- silber-kontakten auf halbleiterbauelementen

Publications (1)

Publication Number Publication Date
AT264594B true AT264594B (de) 1968-09-10

Family

ID=7523808

Family Applications (1)

Application Number Title Priority Date Filing Date
AT47467A AT264594B (de) 1966-01-19 1967-01-17 Verfahren zum Herstellen von Metallkontakten auf Halbleiterbauelementen

Country Status (7)

Country Link
AT (1) AT264594B (de)
CH (1) CH468720A (de)
DE (1) DE1514668B2 (de)
FR (1) FR1508570A (de)
GB (1) GB1166202A (de)
NL (1) NL6615306A (de)
SE (1) SE331856B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001613A1 (de) * 1980-01-17 1981-07-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum einbau einer halbleitervorrichtung in ein gehaeuse

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602329B2 (ja) * 1988-07-06 1997-04-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 金属層で基板を被覆する方法
WO1993010275A1 (en) * 1991-11-21 1993-05-27 Nisshin Steel Co., Ltd. Method of forming layer of evaporation coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001613A1 (de) * 1980-01-17 1981-07-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum einbau einer halbleitervorrichtung in ein gehaeuse

Also Published As

Publication number Publication date
GB1166202A (en) 1969-10-08
NL6615306A (de) 1967-07-20
SE331856B (de) 1971-01-18
CH468720A (de) 1969-02-15
DE1514668A1 (de) 1969-07-03
FR1508570A (fr) 1968-01-05
DE1514668B2 (de) 1977-05-12

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