AT263081B - Halbleitervorrichtung mit mehr als einem Halbleiterschaltelement in einem Körper - Google Patents
Halbleitervorrichtung mit mehr als einem Halbleiterschaltelement in einem KörperInfo
- Publication number
- AT263081B AT263081B AT855365A AT855365A AT263081B AT 263081 B AT263081 B AT 263081B AT 855365 A AT855365 A AT 855365A AT 855365 A AT855365 A AT 855365A AT 263081 B AT263081 B AT 263081B
- Authority
- AT
- Austria
- Prior art keywords
- switching element
- semiconductor
- semiconductor device
- semiconductor switching
- switching
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL646411057A NL144775B (nl) | 1964-09-23 | 1964-09-23 | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. |
Publications (1)
Publication Number | Publication Date |
---|---|
AT263081B true AT263081B (de) | 1968-07-10 |
Family
ID=19791081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT855365A AT263081B (de) | 1964-09-23 | 1965-09-20 | Halbleitervorrichtung mit mehr als einem Halbleiterschaltelement in einem Körper |
Country Status (8)
Country | Link |
---|---|
US (1) | US3614558A (de) |
AT (1) | AT263081B (de) |
BE (1) | BE670038A (de) |
CH (1) | CH436508A (de) |
FR (1) | FR1456952A (de) |
GB (1) | GB1124801A (de) |
NL (1) | NL144775B (de) |
SE (1) | SE314441B (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3800195A (en) * | 1972-08-09 | 1974-03-26 | Motorola Inc | Method of making semiconductor devices through overlapping diffusions |
US3865649A (en) * | 1972-10-16 | 1975-02-11 | Harris Intertype Corp | Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate |
US4261003A (en) * | 1979-03-09 | 1981-04-07 | International Business Machines Corporation | Integrated circuit structures with full dielectric isolation and a novel method for fabrication thereof |
US4446476A (en) * | 1981-06-30 | 1984-05-01 | International Business Machines Corporation | Integrated circuit having a sublayer electrical contact and fabrication thereof |
US4649630A (en) * | 1985-04-01 | 1987-03-17 | Motorola, Inc. | Process for dielectrically isolated semiconductor structure |
JPH0638424B2 (ja) * | 1986-07-31 | 1994-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
US4839309A (en) * | 1988-03-30 | 1989-06-13 | American Telephone And Telegraph Company, At&T Technologies, Inc. | Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
DE102004050740A1 (de) * | 2004-10-19 | 2006-04-20 | Atmel Germany Gmbh | Halbleitergegenstand und Verfahren zur Herstellung |
CN103137547A (zh) * | 2011-11-28 | 2013-06-05 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘体上Si/NiSi2衬底材料及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL264215A (de) * | 1960-05-02 | |||
GB948238A (en) * | 1961-09-25 | 1964-01-29 | Raytheon Co | Improvements in or relating to switching circuits |
BE632105A (de) * | 1962-05-09 | |||
US3323071A (en) * | 1964-07-09 | 1967-05-30 | Nat Semiconductor Corp | Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor |
US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
US3368113A (en) * | 1965-06-28 | 1968-02-06 | Westinghouse Electric Corp | Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation |
-
1964
- 1964-09-23 NL NL646411057A patent/NL144775B/xx unknown
-
1965
- 1965-09-16 US US487748A patent/US3614558A/en not_active Expired - Lifetime
- 1965-09-20 SE SE12225/65A patent/SE314441B/xx unknown
- 1965-09-20 GB GB39928/65A patent/GB1124801A/en not_active Expired
- 1965-09-20 CH CH1295365A patent/CH436508A/de unknown
- 1965-09-20 AT AT855365A patent/AT263081B/de active
- 1965-09-23 BE BE670038A patent/BE670038A/xx unknown
- 1965-09-23 FR FR32346A patent/FR1456952A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE314441B (de) | 1969-09-08 |
NL6411057A (de) | 1966-03-24 |
BE670038A (de) | 1966-03-23 |
FR1456952A (fr) | 1966-07-08 |
US3614558A (en) | 1971-10-19 |
CH436508A (de) | 1967-05-31 |
NL144775B (nl) | 1975-01-15 |
GB1124801A (en) | 1968-08-21 |
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