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AT190593B - Barrier layer electrode system which contains a semiconducting body made of germanium or silicon, in particular a crystal diode or transistor - Google Patents

Barrier layer electrode system which contains a semiconducting body made of germanium or silicon, in particular a crystal diode or transistor

Info

Publication number
AT190593B
AT190593B AT190593DA AT190593B AT 190593 B AT190593 B AT 190593B AT 190593D A AT190593D A AT 190593DA AT 190593 B AT190593 B AT 190593B
Authority
AT
Austria
Prior art keywords
germanium
transistor
silicon
barrier layer
body made
Prior art date
Application number
Other languages
German (de)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT190593B publication Critical patent/AT190593B/en

Links

AT190593D 1954-07-01 1955-06-28 Barrier layer electrode system which contains a semiconducting body made of germanium or silicon, in particular a crystal diode or transistor AT190593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL190593X 1954-07-01

Publications (1)

Publication Number Publication Date
AT190593B true AT190593B (en) 1957-07-10

Family

ID=19777850

Family Applications (1)

Application Number Title Priority Date Filing Date
AT190593D AT190593B (en) 1954-07-01 1955-06-28 Barrier layer electrode system which contains a semiconducting body made of germanium or silicon, in particular a crystal diode or transistor

Country Status (1)

Country Link
AT (1) AT190593B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1102914B (en) * 1958-06-13 1961-03-23 Westinghouse Electric Corp Process for the production of semiconductor arrangements, such as diodes, transistors or the like, with a silicon semiconductor body
DE1120603B (en) * 1960-01-13 1961-12-28 Siemens Ag Method for manufacturing a semiconductor device
DE1133834B (en) * 1960-09-21 1962-07-26 Siemens Ag Silicon rectifier and process for its manufacture
DE1170079B (en) * 1960-06-21 1964-05-14 Siemens Ag Semiconductor device
DE1190583B (en) * 1960-03-18 1965-04-08 Western Electric Co Injection-free ohmic contact for semiconductor bodies
DE1197551B (en) * 1960-12-19 1965-07-29 Elektronik M B H Process for the production of semiconductor arrangements for high currents, in particular silicon power rectifiers
DE1226212B (en) * 1961-11-17 1966-10-06 Bbc Brown Boveri & Cie Semiconductor device
DE1242759B (en) * 1961-09-01 1967-06-22 Stackpole Carbon Co Sinter support plate for semiconductor diodes
DE1282195B (en) * 1963-03-16 1968-11-07 Siemens Ag Semiconductor component with sintered carrier intermediate plate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1102914B (en) * 1958-06-13 1961-03-23 Westinghouse Electric Corp Process for the production of semiconductor arrangements, such as diodes, transistors or the like, with a silicon semiconductor body
DE1120603B (en) * 1960-01-13 1961-12-28 Siemens Ag Method for manufacturing a semiconductor device
DE1190583B (en) * 1960-03-18 1965-04-08 Western Electric Co Injection-free ohmic contact for semiconductor bodies
DE1170079B (en) * 1960-06-21 1964-05-14 Siemens Ag Semiconductor device
DE1133834B (en) * 1960-09-21 1962-07-26 Siemens Ag Silicon rectifier and process for its manufacture
DE1197551B (en) * 1960-12-19 1965-07-29 Elektronik M B H Process for the production of semiconductor arrangements for high currents, in particular silicon power rectifiers
DE1242759B (en) * 1961-09-01 1967-06-22 Stackpole Carbon Co Sinter support plate for semiconductor diodes
DE1226212B (en) * 1961-11-17 1966-10-06 Bbc Brown Boveri & Cie Semiconductor device
DE1282195B (en) * 1963-03-16 1968-11-07 Siemens Ag Semiconductor component with sintered carrier intermediate plate

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