Abstract
In this study, we report a single heterojunction solar cell based on n-type zinc oxide/p-type silicon. Three different solar cells were fabricated based on ZnO thin film on Si substrate, ZnO nanorods on Si substrate, and ZnO nanorods on micro-pyramidal structure of Si substrate. The comparison between these three kinds of solar cells was studied. Pyramidal structure of silicon was fabricated using chemical etching technique of p-type Si (100). The chemical solution consists of NaOH, isopropyl alcohol and hydrazine hydrate. The results showed that Si micro-pyramids can enhance optical absorption of Si substrates by increasing surface area and entrapping of incident light. For fabrication of uniform ZnO nanorods, a seed layer of ZnO was deposited on Si substrates via radio frequency magnetron sputtering technique. This layer can be used as an active n-type material in heterojunction solar cells as well. ZnO nanostructures can increase light absorption due to their high specific surface area. The combination of ZnO nanorods and Si micro-pyramids can enhance light trapping effect and increase the efficiency of solar cells. The structural and morphology of samples were studied using field-emission scanning electron microscopy, atomic force microscopy and X-ray diffractometry while the optical properties were investigated using photoluminescence and reflectance spectrometry. The efficiency and fill factor of solar cells were obtained from current–voltage characteristics using a solar simulator and a source-meter. The results showed that the efficiency of solar cell based on nanostructures of ZnO/micropyramids of Si is highly increased due to high anti-reflective behavior of this sample.









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This work was supported by Materials and Energy Research Center [Grant No. 471394052].
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Fallahazad, P., Naderi, N., Eshraghi, M.J. et al. Combination of surface texturing and nanostructure coating for reduction of light reflection in ZnO/Si heterojunction thin film solar cell. J Mater Sci: Mater Electron 29, 6289–6296 (2018). https://doi.org/10.1007/s10854-018-8608-0
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DOI: https://doi.org/10.1007/s10854-018-8608-0