Organic trihydridosilanes provide an elegant route for generating self-assembled monolayers (SAM)s by vapor phase transport on a variety of substrates. Under mild conditions, these precursors can be made to interact with a variety of... more
Organic trihydridosilanes provide an elegant route for generating self-assembled monolayers (SAM)s by vapor phase transport on a variety of substrates. Under mild conditions, these precursors can be made to interact with a variety of clean metal and hydrogenated metalloid surfaces such as Ti, Cu, and Si to form near-zero-thickness SAMs. These SAMs can be customized with specific functionality to activate or deactivate subsequent Co deposition on the underlying substrate, leading to area specific Co deposition.
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The silicon-nitrogen material system, primarily in the form of silicon nitride (SiNx) and silicon silicon carbo-nitride (SiNxCy) (where 0
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La presente invention concerne, dans ses modes de realisation, des compositions de formation de films auto-imageables comprenant des polymeres de type norbornene et pouvant etre formules pour etre soit de sensibilite positive soit de... more
La presente invention concerne, dans ses modes de realisation, des compositions de formation de films auto-imageables comprenant des polymeres de type norbornene et pouvant etre formules pour etre soit de sensibilite positive soit de sensibilite negative. Les films ainsi formes s'averent utiles pour la formation de dispositifs microelectroniques et optoelectroniques.
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Research Interests: Chemical Engineering, Materials Science, Heterocyclic chemistry, Thin Films and Coatings, Glass, and 13 moreNanofabrication, Medicine, Click chemistry, Surface modification, Thin Film Deposition and Surface Modification, Nanostructure, Click Chemistry in Polymers, Antiproliferative, CVD Coatings, Thiol-ene Chemistry, Organosilicon Compounds, Molecular Layer Deposition (MLD), and Silane coupling agents
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Novel organic–inorganic nanocomposites were prepared by in situ curing of poly (amic acid) macromolecules with POSS epoxide, octa (ethylcyclohexylepoxidedimethylsiloxy) silsesquioxane (OC). Solid-state 29Si NMR data show that properties... more
Novel organic–inorganic nanocomposites were prepared by in situ curing of poly (amic acid) macromolecules with POSS epoxide, octa (ethylcyclohexylepoxidedimethylsiloxy) silsesquioxane (OC). Solid-state 29Si NMR data show that properties of the interphase ...
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... Chad M. Brick, Yuko Ouchi, Yoshiki Chujo, and Richard M. Laine* §. Departments of Chemistry and Materials Science and Engineering and the Macromolecular Science and Engineering Center, University of Michigan, Ann ...
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... R. Tamaki, § S.-G. Kim, MZ Asuncion, M. Roll, T. Nemoto, Y. Ouchi, Y. Chujo, and RM Laine* . ... Abstract. Poly(bromooctaphenylsilsesquioxane)s (Br x OPS) are easily synthesized from octaphenylsilsesquioxane (OPS) via... more
... R. Tamaki, § S.-G. Kim, MZ Asuncion, M. Roll, T. Nemoto, Y. Ouchi, Y. Chujo, and RM Laine* . ... Abstract. Poly(bromooctaphenylsilsesquioxane)s (Br x OPS) are easily synthesized from octaphenylsilsesquioxane (OPS) via bromination with Br 2 /Fe in dichloromethane. ...
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A series of aminophenylsilsesquioxanes were synthesized and cross-linked with a set of epoxy resins to form 3-D epoxy resins with completely defined interfaces. The objectives of this work were to make materials with very low coefficients... more
A series of aminophenylsilsesquioxanes were synthesized and cross-linked with a set of epoxy resins to form 3-D epoxy resins with completely defined interfaces. The objectives of this work were to make materials with very low coefficients of thermal expansions (CTEs) such that these materials could be used for flip-chip underfill in the manufacture of chips on printed circuit boards. Related polyimides were made as oxygen barrier materials. We were able to make epoxy resin hybrid composites with CTEs of ≈30 ppm/°C. Likewise with polyimides we were able to make composite resins with oxygen transmission rates of 3–5 ± 0.5 cc·20 μm/m2·day·atm in films that were only 0.5 mm thick.
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High-quality silicon nitride (SiN x) thin films were grown by remote-plasma-activated pulsed chemical vapor deposition (P-CVD) from the source precursor 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C 9 H 27 N 3 Si 3) and remote ammonia (NH... more
High-quality silicon nitride (SiN x) thin films were grown by remote-plasma-activated pulsed chemical vapor deposition (P-CVD) from the source precursor 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C 9 H 27 N 3 Si 3) and remote ammonia (NH 3) plasma on silicon oxide (SiO 2) substrates within an optimized substrate temperature window ranging from 200 to 350 °C. TICZ was selected because of its chemical stability, non-pyrophoric nature, good vapor pressure (~127 Pa at 70 °C), and its chemical structure that incorporates alkyl groups with three C atoms on each N atom, which provides a clean elimination mechanism for low temperature SiN x deposition. P-CVD consisted of a four-step process: TICZ pulse with no plasma, N 2 purge, NH 3 plasma pulse, and N 2 purge. The as-deposited films were analyzed using spectroscopic ellipsometry and x-ray photoelectron spectroscopy (XPS). Wet etch rates were determined using a standard solution consisting of 0.5% hydrofluoric acid in deionized water. XPS...
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Results are presented from an exploratory study of near-room-temperature pulsed deposition of SiCxNy thin films using 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) and soft remote ammonia (NH3) plasma co-reactants. The process... more
Results are presented from an exploratory study of near-room-temperature pulsed deposition of SiCxNy thin films using 1,3,5-tri(isopropyl)cyclotrisilazane (TICZ, C9H27N3Si3) and soft remote ammonia (NH3) plasma co-reactants. The process involved four pulses: thermal adsorption of TICZ to the substrate at very low temperature, nitrogen (N2) purge, soft NH3 remote plasma step, and N2 purge. These steps were repeated until the desired film thickness was reached. The ratio of C to N in the films was modulated by controlling the substrate temperature in the range of 30 to 200° C. In-situ analysis of the deposition process was carried-out using spectroscopic ellipsometry, and the films were analyzed by x-ray photoelectron spectroscopy (XPS). The findings of this study indicate that the combination of reduced substrate thermal budget and soft remote plasma provides an optimum low energy environment for the controlled deposition of SiCxNy protective coatings on thermally fragile, chemically sensitive substrates, including plastics and polymers. key words: silicon carbonitride; thin films