Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as... more Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pretreatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.
Detonation nanodiamond (DND) seeding recently emerged as an effective method for enhancing nuclea... more Detonation nanodiamond (DND) seeding recently emerged as an effective method for enhancing nucleation of chemical vapor deposited (CVD) diamond on non-diamond substrates. This work attempts to provide insight on this effect. For this purpose, polycrystalline diamond coatings were deposited on DND-treated silicon substrates. The exposed nucleation surface side was examined with x-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM); it was found to contain micron-sized granular features, composed of 25-40 nm diamond nanocrystals, similar in size to the DND seeds. HRTEM images further confirm this similarity. A detailed analysis of the nanocarbon phase diagram suggests that nanodiamond crystals can form under CVD environments.
Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as... more Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pretreatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.
Detonation nanodiamond (DND) seeding recently emerged as an effective method for enhancing nuclea... more Detonation nanodiamond (DND) seeding recently emerged as an effective method for enhancing nucleation of chemical vapor deposited (CVD) diamond on non-diamond substrates. This work attempts to provide insight on this effect. For this purpose, polycrystalline diamond coatings were deposited on DND-treated silicon substrates. The exposed nucleation surface side was examined with x-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM); it was found to contain micron-sized granular features, composed of 25-40 nm diamond nanocrystals, similar in size to the DND seeds. HRTEM images further confirm this similarity. A detailed analysis of the nanocarbon phase diagram suggests that nanodiamond crystals can form under CVD environments.
Uploads
Papers by Joana Mendes
to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry.
The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid
premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the
interface between both materials needs to be virtually void free and high quality diamond films are required
from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the
properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor
deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pretreatment
PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with
6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane
concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was
assessed with Raman spectroscopy.
to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry.
The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid
premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the
interface between both materials needs to be virtually void free and high quality diamond films are required
from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the
properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor
deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pretreatment
PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with
6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane
concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was
assessed with Raman spectroscopy.