The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism
<p>(<b>a</b>)–(<b>e</b>) The Raman spectra and corresponding optical images of the graphene on SiO<sub>2</sub>/Si substrates catalyzed by Ni–Cu alloys with different compositions (Ni:Cu = 1:10 (<b>a</b>), 1:3 (<b>b</b>), 1:2 (<b>c</b>), 1:1 (<b>d</b>) and 2:1 (<b>e</b>), respectively).</p> "> Figure 2
<p>(<b>a</b>,<b>c</b>,<b>e</b>) The AFM, optical and SEM images of the graphene grown on the Ni1Cu3 alloy, respectively. (<b>b</b>,<b>d</b>,<b>f</b>) The AFM, optical and SEM images of the graphene grown on the Ni2Cu1 alloy, respectively. (<b>g</b>,<b>h</b>) The diffusion mechanism of carbon atoms on Cu and Ni surfaces, respectively.</p> "> Figure 3
<p>Theoretically determined tracer diffusivity (10<sup>-12</sup> m<sup>2</sup>/s) for (<b>a</b>) the bulk diffusion rate of carbon atoms in alloys with different Ni–Cu ratios at 600 °C. (<b>b</b>) The bulk diffusion rate of carbon atoms in alloys with different Ni–Cu ratios at 600 °C and 800 °C.</p> "> Figure 4
<p>(<b>a</b>) Raman spectra of the graphene grown with and without plasma at 600 °C. (<b>b</b>) Raman spectra of the graphene grown with different plasma powers. (<b>c</b>) The photograph of the growth chamber. (<b>d</b>) The photograph taken during the growth process.</p> "> Figure 5
<p>(<b>a</b>–<b>d</b>) Schematic illustration of the etching process of our in-situ, transfer-free growth method. (<b>a</b>) After the graphene growth, PMMA coating is spun on the sample surface. (<b>b</b>) When the sample is immersed in the metal etchant, the etchant can efficiently penetrate through the molecular gap of PMMA and the grain boundary of the graphene to achieve the metal etching. (<b>c</b>,<b>d</b>) After the metal is completely etched away, the PMMA/graphene films will fall on the substrate. (<b>e</b>,<b>f</b>) Wafer-level graphene growth. The photograph of the sample before (<b>e</b>) and after (<b>f</b>) the metal sacrificial layer etching. (<b>g</b>) An optical image of the graphene at 1000× magnification. (<b>h</b>,<b>i</b>) Raman mapping of the D/G and G/2D ratios of the graphene over 50 × 50 μm.</p> ">
Abstract
:1. Introduction
2. Materials and Methods
2.1. Graphene Synthesis
2.2. Metal Sacrificial Layer Etching
3. Result and Discussion
3.1. Diffusion Rate of Carbon Atoms on Metal Surface
3.2. Plasma Enhancement
3.3. Wafer-Scale Patterned Graphene Direct Growth
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Dong, Y.; Guo, S.; Mao, H.; Xu, C.; Xie, Y.; Cheng, C.; Mao, X.; Deng, J.; Pan, G.; Sun, J. The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism. Nanomaterials 2019, 9, 1633. https://doi.org/10.3390/nano9111633
Dong Y, Guo S, Mao H, Xu C, Xie Y, Cheng C, Mao X, Deng J, Pan G, Sun J. The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism. Nanomaterials. 2019; 9(11):1633. https://doi.org/10.3390/nano9111633
Chicago/Turabian StyleDong, Yibo, Sheng Guo, Huahai Mao, Chen Xu, Yiyang Xie, Chuantong Cheng, Xurui Mao, Jun Deng, Guanzhong Pan, and Jie Sun. 2019. "The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism" Nanomaterials 9, no. 11: 1633. https://doi.org/10.3390/nano9111633