Three-Dimensional Reservoir-Based Dielectrophoresis (rDEP) for Enhanced Particle Enrichment
"> Figure 1
<p>Conceptual schematic of the two-dimensional reservoir-based dielectrophoresis (2DrDEP) and three-dimensional reservoir-based dielectrophoresis (3DrDEP) microfluidic devices. The inset images represent a zoomed view of the reservoir microchannel junction for the device. (<b>a</b>) 2DrDEP device fabricated by punching a fluid reservoir within the circular guides patterned as extensions to the microchannel during photolithography. This makes the patterned reservoir-microchannel junction two-dimensional; (<b>b</b>) 3DrDEP device fabricated by punching a fluid reservoir directly on the circular guides patterned as extensions to the microchannel during photolithography. This makes the patterned reservoir-microchannel junction three-dimensional.</p> "> Figure 2
<p>Illustrative mechanism of the proposed three-dimensional reservoir-based dielectrophoresis (3DrDEP) via the views of the reservoir-microchannel junction from different perspectives: (<b>a</b>) Top view (X-Y) of the contours of electric field; (<b>b</b>) Top view (X-Y) of the rDEP force vectors acting on latex beads; (<b>c</b>) Side view (X-Z) of the contours of electric field; (<b>d</b>) Side view (X-Z) of the rDEP force vectors acting on latex beads. The contour maps in (<b>b</b>) and (<b>d</b>) each show the magnitude of the resultant DEP force.</p> "> Figure 3
<p>Comparison of the experimentally obtained and numerically predicted path-lines of 5 µm latex beads at the reservoir-microchannel junction of (<b>a</b>) 2DrDEP device and (<b>b</b>) 3DrDEP device plotted in the top view (X-Y). Three voltage settings are used for comparison, namely 25 V DC, 25 V DC/150 V AC, and 25 V DC/300 V AC. Note that in both devices, the rDEP focusing effect increases with an increase in AC voltage, and the beads get deflected towards the center-line of the channel. Also observe that for all the voltages, some of the focused beads in the 2DrDEP device (<b>a</b>) appear blurred in the field of view of the microscope, indicating an absence of a three-dimensional focusing. In contrast, all the beads in the 3DrDEP device (<b>b</b>) appear sharply focused at higher voltages, indicating a three-dimensional focusing effect towards the channel center-line and the channel bottom.</p> "> Figure 4
<p>Graphical representation of the variation of the dimensionless focusing effectiveness, <math display="inline"> <semantics> <mi>χ</mi> </semantics> </math> (defined in Equation (6)), as a function of the applied AC voltage in the 2DrDEP and the 3DrDEP devices. The applied DC voltage is fixed at 25 V, while the AC voltage is varied from 0 V to 300 V. Numerically predicted 5 µm particle path-lines are used to measure the width and depth of the focused particles and the measurements are used in Equation (6) to calculate the effectiveness. Three experimental data points corresponding to the images in <a href="#micromachines-09-00123-f003" class="html-fig">Figure 3</a>a, are also shown for comparison with the numerical graphs for 2DrDEP. These experimental data points are obtained by measuring the experimentally generated streak width of the beads in the top view (X-Y), and recalling that the depth of this focused streak is equal to the channel height due to the 2D electric field gradients. The measured streak widths are then substituted in Equation (6) to obtain the focusing effectiveness. The inset images represent the numerically predicted path-lines for 25 V DC/300 V AC plotted in the side view (X-Z). Observe the significant increase in the focusing effectiveness of the 3DrDEP device over the 2DrDEP device because of the strong additional depth-wise component of the electric field gradients produced in the former.</p> "> Figure 5
<p>Graphical representation of the variation of the threshold AC voltage required to trap the 5 µm beads as a function of the applied DC voltage in the 2DrDEP and the 3DrDEP devices. The applied DC voltages are varied from 25 V to 100 V in steps of 25 V, while the AC voltage is varied from 0 V until the value where trapping is achieved. The inset images represent the comparison of experimentally obtained and numerically predicted path-lines for an applied DC voltage of 25 V DC plotted in the top view (X-Y). Observe the significant reduction in the AC voltage required for trapping inside the 3DrDEP device over that in the 2DrDEP device. This is because of the strong additional depth-wise component of the electric field gradients produced in the former, which reduces the requirement of applied voltage for producing comparable DEP forces.</p> ">
Abstract
:1. Introduction
2. Experiment
3. Theory and Simulation
3.1. Working Principle
3.2. Numerical Model
4. Results and Discussion
4.1. Comparison of the Focusing Ability of the Two Devices
4.2. Comparison of the Trapping Ability of the Two Devices
5. Concluding Remarks
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Kale, A.; Patel, S.; Xuan, X. Three-Dimensional Reservoir-Based Dielectrophoresis (rDEP) for Enhanced Particle Enrichment. Micromachines 2018, 9, 123. https://doi.org/10.3390/mi9030123
Kale A, Patel S, Xuan X. Three-Dimensional Reservoir-Based Dielectrophoresis (rDEP) for Enhanced Particle Enrichment. Micromachines. 2018; 9(3):123. https://doi.org/10.3390/mi9030123
Chicago/Turabian StyleKale, Akshay, Saurin Patel, and Xiangchun Xuan. 2018. "Three-Dimensional Reservoir-Based Dielectrophoresis (rDEP) for Enhanced Particle Enrichment" Micromachines 9, no. 3: 123. https://doi.org/10.3390/mi9030123