Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3
"> Figure 1
<p>Schematic of β-Ga<sub>2</sub>O<sub>3</sub> crystal structure and damaged β-Ga<sub>2</sub>O<sub>3</sub> after Yb ion implantation with Yb on interstitial sites.</p> "> Figure 2
<p>Random (ran, solid symbols) and aligned (ali, open symbols) RBS spectra for β-Ga<sub>2</sub>O<sub>3</sub> implanted with Yb ions at the fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> and post-implantation annealed at 800 °C, in O<sub>2</sub> for different time durations.</p> "> Figure 3
<p>Random (ran, solid symbols) and aligned (ali, open symbols) RBS spectra for β-Ga<sub>2</sub>O<sub>3</sub> implanted with Yb ions at the fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> and post-implantation annealed in O<sub>2</sub> at different temperatures for 10 min.</p> "> Figure 4
<p>Random (ran, solid symbols) and aligned (ali, open symbols) RBS spectra for β-Ga<sub>2</sub>O<sub>3</sub> implanted with Yb ions at the fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> at high temperatures.</p> "> Figure 5
<p>Comparison of various annealing processes. Random (ran, solid symbols) and aligned (ali, open symbols) RBS spectra for β-Ga<sub>2</sub>O<sub>3</sub> implanted with Yb ions at with the fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> at HT and RT, and subsequently post-RT implantation annealed at different conditions. The solid line represents the results of the McChasy simulations.</p> "> Figure 6
<p>Depth distributions of RDA-type defects and DIS-type defects obtained via McChasy simulations for β-Ga<sub>2</sub>O<sub>3</sub> implanted with Yb ions with a fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> at HT and RT, and subsequently post-RT implantation annealed under different conditions.</p> "> Figure 7
<p>Aligned (ali, solid symbols) RBS spectra for Yb signal of β-Ga<sub>2</sub>O<sub>3</sub> implanted with Yb ions at the fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> at HT and RT, and subsequently post-RT implantation annealed at different conditions.</p> "> Figure 8
<p>The 2θ-ω scan of the symmetrical −402 reflection of a virgin β-Ga<sub>2</sub>O<sub>3</sub> crystal (black). This crystal was implanted at RT with Yb ions with a fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> (red) and subsequently post-RT-implantation annealed for 10 min. at 800 °C in the O<sub>2</sub> (blue), N<sub>2</sub> (yellow), and Ar (green) atmosphere.</p> "> Figure 9
<p>AFM imaging of the surface morphology for virgin β-Ga<sub>2</sub>O<sub>3</sub>, implanted with 150 keV Yb ions to the fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup>, RTA-annealed in different conditions, and HT-implanted.</p> "> Figure 10
<p>RT PL spectra in IR region obtained for β-Ga<sub>2</sub>O<sub>3</sub> crystal implanted with Yb ions to a fluence of 1 × 10<sup>14</sup> at/cm<sup>2</sup> for as-implanted sample at RT and HT temperatures and for RT-implanted and subsequently RTA-annealed samples for 10 min. at different conditions.</p> ">
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Crystal Lattice Recovery
3.2. Yb Ion Location
3.3. High-Resolution X-ray Diffraction
3.4. Surface Morphology
3.5. Room-Temperature Photoluminescence
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Different RTA Temperatures | Different RTA Time | Different RTA Atmospheres | HT Implantation | ||||
---|---|---|---|---|---|---|---|
Sample | RMS (nm) | Sample | RMS (nm) | Sample | RMS (nm) | Sample | RMS (nm) |
Virgin | 1.3 | O2 800 °C, 1 min | 0.7 | N2 800 °C, 10 min | 0.2 | 500 °C | 0.2 |
RT implanted | 0.7 | O2 800 °C, 5 min | 0.6 | Ar 800 °C, 10 min | 0.3 | 700 °C | 1.0 |
O2 700 °C, 10 min | 0.2 | O2 800 °C, 10 min | 0.6 | O2 800 °C, 10 min | 0.6 | 900 °C | 0.3 |
O2 800 °C, 10 min | 0.6 | O2 800 °C, 20 min | 0.3 | - | - | - | - |
O2 900 °C, 10 min | 1.3 | - | - | - | - | - | - |
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Sarwar, M.; Ratajczak, R.; Ivanov, V.Y.; Gieraltowska, S.; Wierzbicka, A.; Wozniak, W.; Heller, R.; Eisenwinder, S.; Guziewicz, E. Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3. Materials 2024, 17, 3979. https://doi.org/10.3390/ma17163979
Sarwar M, Ratajczak R, Ivanov VY, Gieraltowska S, Wierzbicka A, Wozniak W, Heller R, Eisenwinder S, Guziewicz E. Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3. Materials. 2024; 17(16):3979. https://doi.org/10.3390/ma17163979
Chicago/Turabian StyleSarwar, Mahwish, Renata Ratajczak, Vitalii Yu. Ivanov, Sylwia Gieraltowska, Aleksandra Wierzbicka, Wojciech Wozniak, René Heller, Stefan Eisenwinder, and Elżbieta Guziewicz. 2024. "Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3" Materials 17, no. 16: 3979. https://doi.org/10.3390/ma17163979