Abstract
A special structure with Al-composition graded barriers in the active region was designed to provide a sawtooth layer for the multiple quantum barriers, which were investigated numerically. The simulation demonstrates that the output power of optimized structure has reached to 50 mW and the efficiency droop also has significantly improved. By detailedly analyzing the results, the advantages of the ultraviolet light emitting diodes with sawtooth barriers are attributed to the design, which could enhance the ability of electrons reservoir, modulate carrier distribution and suppress electron spill out from the active region. As a result, it can enhance the rate of carrier radiation recombination and ameliorate internal quantum efficiency.
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Wang, D., Yin, Y. & Chen, X. Improvement of Output Power of AlGaN-Based Ultraviolet Light Emitting Diodes with Sawtooth Barriers. J. Electron. Mater. 48, 4330–4334 (2019). https://doi.org/10.1007/s11664-019-07200-y
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DOI: https://doi.org/10.1007/s11664-019-07200-y