Abstract
As CMOS technology approaches its physical and technical limits, alternative technologies such as nanotechnology or quantum computing are needed to overcome the challenges of lithography, transistor scaling, interconnects, and miniaturization. This article introduces a novel nanotechnology that uses atomic-scale silicon dangling bonds (ASDB) to create high-performance, low-power, nanoscale logic circuits. DBs are atoms that can form basic logic gates on a silicon surface using a scanning tunneling microscope device. ASDB can also be an alternative to the existing complementary metal oxide semiconductor (CMOS) technology. The article also proposes a new bar-shaped pattern to design gates and logic circuits with ASDB nano tecnolgoy. The bar-shaped pattern improves the reliability of the output, reduces the area and power consumption, and solves the problem of interatomic energy effects of ASDB. The article demonstrates the efficiency of the bar-shaped pattern by implementing two-input gates such as AND, NAND, OR, NOR, XOR, XNOR, and a 2:1 multiplexer with ASDB. The article also uses a powerful tool called SiQAD to simulate and verify the performance of the proposed structures with ASDB. According to the simulation results, the proposed logic gates are more energy efficient, stable, and compact than the previous structures. They consume 35% and 24.34% less energy and have 14.18% more stability, respectively.
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All authors have participated in (a) conception and design or analysis and interpretation of the data; (b) drafting the article or revising it critically for important intellectual content; and (c) approval of the final version. This manuscript has not been submitted to, nor is under review at, another journal or other publishing venue. The authors have no affiliation with any organization with a direct or indirect financial interest in the subject matter discussed in the manuscript. The following authors have affiliations with organizations with direct or indirect financial interest in the subject matter discussed in the manuscript: Author’s name Affiliation Hadi Rasmi1 Mohammad Mosleh1* Nima Jafari Navimipour2,3 Mohammad Kheyrandish1 1 Department of Computer Engineering, Dezful Branch, Islamic Azad University, Dezful, Iran 2Department of Computer Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Ira 3 Department of Computer Engineering, Faculty of Engineering and Natural Sciences, Kadir Has University, Istanbul, Turkey, nima.navimipour@khas.edu.tr *Corresponding Author: Mohammad Mosleh(Mohammad.Mosleh@iau.ac.ir)
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Rasmi, H., Mosleh, M., Jafari Navimipour, N. et al. An ultra efficient 2:1 multiplexer using bar-shaped pattern in atomic silicon dangling bond technology. J Supercomput 80, 18347–18364 (2024). https://doi.org/10.1007/s11227-024-06104-x
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DOI: https://doi.org/10.1007/s11227-024-06104-x