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Low Overhead and High Stability Radiation-Hardened Latch for Double/Triple Node Upsets

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Abstract

To tolerate Double Nodes Upset (DNU) and Triple Nodes Upset (TNU), we propose the DNU Tolerant Latch (DNUL) and TNU Tolerant Latch (TNUL) with low overhead and high stability. Both DNUL and TNUL are composed of the looped Input-Split C-Elements (ISCs) and the C-Elements (CEs) at the output level. Based on the robust blocking ability of the ISCs, the simultaneous upset of all inputs of the CE can be blocked. DNUL and TNUL have low overhead with fewer transistors by utilizing the clock-gating and high-speed path technique. Exhaustive HSPICE simulation shows that, in contrast to previous DNU tolerant latches, DNUL is optimal in terms of delay, power consumption and product of delay and power (PDP), but is suboptimal in terms of area overhead. Compared with all alternative structures, TNUL is the best in terms of delay and PDP. Compared to other TNU tolerant latches, TNUL achieves a suboptimal power consumption and area overhead. Variation analysis shows that DNUL and TNUL are insensitive to variations of process, voltage and temperature (PVT).

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Data Availability

The datasets generated and analyzed during the current study are available from the corresponding author on reasonable request.

References

  1. Alioto M, Consoli E, Palumbo G (2015) Variations in Nanometer CMOS flip-flops: part II – energy variability and impact of other sources of variations. IEEE Trans Circuits Syst I Regul Pap 62(3):835–843. https://doi.org/10.1109/TCSI.2014.2366813

    Article  MathSciNet  MATH  Google Scholar 

  2. Calin T, Nicolaidis M, Velazco R (1996) Upset hardened memory design for submicron CMOS technology. IEEE Trans Nucl Sci 43(6):2874–2878. https://doi.org/10.1109/23.556880

    Article  Google Scholar 

  3. Ebara M, Yamada K, Kojima K, Furuta J, Kobayashi K (2019) Process dependence of soft errors induced by alpha particles, heavy ions, and high energy neutrons on flip flops in FDSOI. IEEE J Electron Devices Soc 7:817–824. https://doi.org/10.1109/JEDS.2019.2907299

    Article  Google Scholar 

  4. Eftaxiopoulos N, Axelos N, Pekmestzi K (2015) DONUT: a double node upset tolerant latch. 2015 IEEE Computer Society Annual Symposium on VLSI, pp 509–514. https://doi.org/10.1109/ISVLSI.2015.72

    Book  Google Scholar 

  5. Fazeli M, Patooghy A, Miremadi SG, Ejlali A (2007) Feedback redundancy: a power efficient SEU-tolerant latch design for deep sub-micron technologies. IEEE/IFIP International Conference on Dependable Systems and Networks (DSN’07), pp 276–285. https://doi.org/10.1109/DSN.2007.51

    Book  Google Scholar 

  6. Ferlet-Cavrois V, Massengill LW, Gouker P (2013) Single event transients in digital CMOS – a review. IEEE Trans Nucl Sci 60(3):1767–1790. https://doi.org/10.1109/TNS.2013.2255624

    Article  Google Scholar 

  7. Ibe E, Taniguchi H, Yahagi Y, Shimbo K, Toba T (2010) Impact of scaling on neutron-induced soft error in SRAMs from a 250 nm to a 22 nm design rule. IEEE Trans Electron Devices 57(7):1527–1538. https://doi.org/10.1109/TED.2010.2047907

    Article  Google Scholar 

  8. Li Y, Wang H, Yao S, Yan X, Gao Z, Xu J (2015) Double node upsets hardened latch circuits. J Electron Test 31(5):537–548. https://doi.org/10.1007/s10836-015-5551-3

    Article  Google Scholar 

  9. Liang H, Li X, Huang Z, Yan A, Xu X (2017) Highly robust double node upset resilient hardened latch design. IEICE Trans Electron E100(5):496–503. https://doi.org/10.1587/transele.E100.C.496

    Article  Google Scholar 

  10. Lin S, Kim Y, Lombardi F (2012) Analysis and design of nanoscale CMOS storage elements for single-event hardening with multiple-node upset. IEEE Trans Device Mater Reliab 12(1):68–77. https://doi.org/10.1109/TDMR.2011.2167233

    Article  Google Scholar 

  11. Liu X (2019) Multiple node upset-tolerant latch design. IEEE Trans Device Mater Reliab 19(2):387–392. https://doi.org/10.1109/TDMR.2019.2912811

    Article  Google Scholar 

  12. Messenger GC (1982) Collection of charge on junction nodes from ion tracks. IEEE Trans Nucl Sci 29(6):2024–2031. https://doi.org/10.1109/TNS.1982.4336490

    Article  Google Scholar 

  13. Mitra S, Seifert N, Zhang M, Shi Q, Kim KS (2005) Robust system design with built-in soft-error resilience. Computer 38(2):43–52. https://doi.org/10.1109/mc.2005.70

    Article  Google Scholar 

  14. Nan H, Choi K (2012) High performance, low cost, and robust soft error tolerant latch designs for nanoscale CMOS technology. IEEE Trans Circuits Syst I Regul Pap 59(7):1445–1457. https://doi.org/10.1109/TCSI.2011.2177135

    Article  MathSciNet  Google Scholar 

  15. Neale A, Sachdev M (2016) Neutron radiation induced soft error rates for an adjacent-ECC protected SRAM in 28 nm CMOS. IEEE Trans Nucl Sci 63(3):1912–1917. https://doi.org/10.1109/TNS.2016.2547963

    Article  Google Scholar 

  16. Neil Weste HE, Harris DM (2011) CMOS VLSI design: a circuits and systems perspective, 4th edn. Addison-Wesley, Boston, MA, USA, p 318 (Proc.)

    Google Scholar 

  17. Omana M, Rossi D, Metra C (2007) Latch susceptibility to transient faults and new hardening approach. IEEE Trans Comput 56(9):1255–1268. https://doi.org/10.1109/TC.2007.1070

    Article  MathSciNet  Google Scholar 

  18. Watkins A, Tragoudas S (2020) Radiation hardened latch designs for double and triple node upsets. IEEE Trans Emerging Top Comput 8(3):616–626. https://doi.org/10.1109/TETC.2017.2776285

    Article  Google Scholar 

  19. Xu H, Sun C, Zhou L, Liang H, Huang Z (2021) Design of a highly robust triple-node-upset self-recoverable latch. IEEE Access 9:113622–113630. https://doi.org/10.1109/ACCESS.2021.3104335

    Article  Google Scholar 

  20. Yan A, Huang Z, Yi M, Xu X, Ouyang Y, Liang H (2017) Double-node-upset-resilient latch design for nanoscale CMOS technology. IEEE Trans Very Large Scale Integr VLSI Syst 25(6):1978–1982. https://doi.org/10.1109/TVLSI.2017.2655079

    Article  Google Scholar 

  21. Yan A, Lai C, Zhang Y, Cui J, Huang Z, Song J, Guo J, Wen X (2018) Novel low cost, double and-triple-node-upset-tolerant latch designs for nano-scale CMOS. IEEE Trans Emerging Top Comput 99:1–14. https://doi.org/10.1109/TETC.2018.2871861

    Article  Google Scholar 

  22. Yan A, Xu Z, Yang K, Cui J, Huang Z, Girard P, Wen X (2020) A novel low-cost TMR-without-voter based HIS-insensitive and MNU-tolerant latch design for aerospace applications. IEEE Trans Aerosp Electron Syst 56(4):2666–2676. https://doi.org/10.1109/TAES.2019.2951186

    Article  Google Scholar 

  23. Yan A, Hu Y, Cui J, Chen Z, Huang Z, Ni T, Girard P, Wen X (2020) Information assurance through redundant design: a novel TNU error-resilient latch for harsh radiation environment. IEEE Trans Comput 69(6):789–799. https://doi.org/10.1109/TC.2020.2966200

    Article  MATH  Google Scholar 

  24. Zhu X, Deng X, Baumann R, Krishnan S (2007) A quantitative assessment of charge collection efficiency of N+ and P+ diffusion areas in terrestrial neutron environment. IEEE Trans Nucl Sci 54(6):2156–2161. https://doi.org/10.1109/TNS.2007.908758

    Article  Google Scholar 

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Funding

This work was supported in part by National Natural Science Foundation of China under grant nos. 62274052, 61834006, 62027815, 61874157.

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Correspondence to Aibin Yan.

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Huang, Z., Wang, H., Ma, D. et al. Low Overhead and High Stability Radiation-Hardened Latch for Double/Triple Node Upsets. J Electron Test 39, 289–301 (2023). https://doi.org/10.1007/s10836-023-06064-9

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