Abstract
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
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Rocha, P.R.F., Kiazadeh, A., Chen, Q., Gomes, H.L. (2012). Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor. In: Camarinha-Matos, L.M., Shahamatnia, E., Nunes, G. (eds) Technological Innovation for Value Creation. DoCEIS 2012. IFIP Advances in Information and Communication Technology, vol 372. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28255-3_59
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DOI: https://doi.org/10.1007/978-3-642-28255-3_59
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