"Effect of oval defects in GaAs on the reliability of SiNx ..."

P. J. van der Wel et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.089

access: closed

type: Journal Article

metadata version: 2020-02-22

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P. J. van der Wel, J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, Y. C. Wang:
Effect of oval defects in GaAs on the reliability of SiN_x metal-insulator-metal capacitors. Microelectron. Reliab. 47(8): 1188-1193 (2007)

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