"Structural advantages of rectangular-like channel cross-section on ..."

Soshi Sato et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.12.007

access: closed

type: Journal Article

metadata version: 2020-02-22

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Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. Microelectron. Reliab. 51(5): 879-884 (2011)

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