"Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with ..."

Matthias Sinnwell et al. (2024)

> Home

Details and statistics

DOI: 10.1109/DRC61706.2024.10605504

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/drc/SinnwellDDLMQ24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/drc/SinnwellDDLMQ24
Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay:
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. DRC 2024: 1-2

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.