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ORCIDRoberto Lacerda de Orio
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2020 – today
- 2024
[c12]Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr
, Wolfgang Goes, Viktor Sverdlov:
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC 2024: 1-2- [c11]Raphael R. N. Souza, Agord M. Pinto, Roberto Lacerda de Orio, Leandro Tiago Manera, Eduardo R. de Lima:
A 1.7 GHz Tuning Range LC-VCO with Varactors Array and Switched Cross-Coupled Core. ISVLSI 2024: 699-703 - [c10]Raphael R. N. Souza, Agord M. Pinto, Roberto Lacerda de Orio, Leandro Tiago Manera, Eduardo R. de Lima:
A 2.0 GHz LC- VCO with 1.4 GHz Tuning Range and Switched Varactor Array. LASCAS 2024: 1-5 - [c9]Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. MIPRO 2024: 1579-1583 - 2023
- [c8]Johannes Ender, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov:
Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. LSSC 2023: 83-90 - [c7]Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, Bernhard Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Back-Hopping in Ultra-Scaled MRAM Cells. MIPRO 2023: 159-162 - 2022
- [c6]Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr:
Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics. ESSDERC 2022: 301-303 - [c5]Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Spin Torques in ULTRA-Scaled MRAM Devices. ESSDERC 2022: 348-351 - [c4]Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, W. J. Loch, Nils Petter Jørstad, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO 2022: 129-132 - 2021
- [c3]Mario Bendra, Johannes Ender, Simone Fiorentini, T. Hadámek, Roberto Lacerda de Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr:
Finite Element Method Approach to MRAM Modeling. MIPRO 2021: 70-73
2010 – 2019
- 2019
- [c2]Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov:
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC 2019: 146-149 - 2018
- [c1]Rafael O. Nunes, R. L. de Orio:
Operational Amplifier Performance Degradation and Time-to-Failure due to Electromigration. SBCCI 2018: 1-6 - 2017
- [j6]Rafael O. Nunes, R. L. de Orio:
Study of the impact of electromigration on integrated circuit performance and reliability at design level. Microelectron. Reliab. 76-77: 75-80 (2017) - 2012
- [j5]Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr:
Interconnect reliability dependence on fast diffusivity paths. Microelectron. Reliab. 52(8): 1532-1538 (2012) - [j4]Roberto Lacerda de Orio, Hajdin Ceric, Siegfried Selberherr:
Electromigration failure in a copper dual-damascene structure with a through silicon via. Microelectron. Reliab. 52(9-10): 1981-1986 (2012) - 2011
- [j3]Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser:
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51(9-11): 1525-1529 (2011) - [j2]R. L. de Orio, Hajdin Ceric, Siegfried Selberherr:
A compact model for early electromigration failures of copper dual-damascene interconnects. Microelectron. Reliab. 51(9-11): 1573-1577 (2011) - 2010
- [j1]R. L. de Orio, Hajdin Ceric, Siegfried Selberherr:
Physically based models of electromigration: From Black's equation to modern TCAD models. Microelectron. Reliab. 50(6): 775-789 (2010)
Coauthor Index
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