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ORCIDBehzad Ebrahimi
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2020 – today
- 2025
[j19]Seyed Arman Sabaghpour, Behzad Ebrahimi, Pooya Torkzadeh:
Novel hybrid TFET-FinFET 12T SRAM cells with enhanced write margin and read performance. Integr. 100: 102294 (2025)- 2023
- [j18]Mohammad Ghanatabadi, Behzad Ebrahimi
, Omid Akbari:
Accurate and Compact Approximate 4:2 Compressors with GDI Structure. Circuits Syst. Signal Process. 42(7): 4148-4169 (2023) - [j17]Afshin Khaksari, Omid Akbari, Behzad Ebrahimi:
BEAD: Bounded error approximate adder with carry and sum speculations. Integr. 88: 353-361 (2023) - 2022
- [j16]Bahareh Seyedzadeh Sany, Behzad Ebrahimi:
A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications. Int. J. Circuit Theory Appl. 50(2): 417-426 (2022) - 2021
- [j15]Erfan Shakouri, Behzad Ebrahimi, Nima Eslami, Mohammad Chahardori:
Single-Ended 10T SRAM Cell with High Yield and Low Standby Power. Circuits Syst. Signal Process. 40(7): 3479-3499 (2021) - [j14]Negin Mohajeri, Behzad Ebrahimi, Massoud Dousti:
HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network. J. Circuits Syst. Comput. 30(15): 2150274:1-2150274:19 (2021)
2010 – 2019
- 2019
- [j13]Ghasem Pasandi, Kolsoom Mehrabi, Behzad Ebrahimi, Sied Mehdi Fakhraei, Ali Afzali-Kusha, Massoud Pedram:
Low-power data encoding/decoding for energy-efficient static random access memory design. IET Circuits Devices Syst. 13(8): 1152-1159 (2019) - 2016
- [j12]Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi:
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs. Microelectron. Reliab. 65: 20-26 (2016) - 2015
- [j11]Behzad Ebrahimi, Reza Asadpour, Ali Afzali-Kusha, Massoud Pedram:
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages. Int. J. Circuit Theory Appl. 43(12): 2011-2024 (2015) - [j10]Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram:
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Integr. 50: 91-106 (2015) - [c4]Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram:
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors. ISQED 2015: 10-17 - 2014
- [j9]Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
Robust FinFET SRAM design based on dynamic back-gate voltage adjustment. Microelectron. Reliab. 54(11): 2604-2612 (2014) - 2013
- [j8]Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. Microelectron. Reliab. 53(5): 670-675 (2013) - [c3]Behzad Ebrahimi, Ali Afzali-Kusha, Nader Sehatbakhsh:
Robust polysilicon gate FinFET SRAM design using dynamic back-gate bias. DTIS 2013: 171-172 - 2012
- [j7]Hossein Aghababa, Behzad Ebrahimi, Mehdi Saremi, Vahid Moalemi, Behjat Forouzandeh:
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems. IEICE Electron. Express 9(10): 881-887 (2012) - [j6]Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram:
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. J. Zhejiang Univ. Sci. C 13(1): 58-70 (2012) - [j5]Hossein Aghababa, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram:
Probability calculation of read failures in nano-scaled SRAM cells under process variations. Microelectron. Reliab. 52(11): 2805-2811 (2012) - [j4]Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability. Microelectron. Reliab. 52(12): 2948-2954 (2012) - 2011
- [j3]Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi:
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. Microelectron. Reliab. 51(12): 2069-2076 (2011) - [j2]Behzad Ebrahimi, Masoud Rostami, Ali Afzali-Kusha, Massoud Pedram:
Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage. IEEE Trans. Very Large Scale Integr. Syst. 19(10): 1911-1916 (2011) - 2010
- [j1]Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp:
A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution Method. IEEE Trans. Biomed. Eng. 57(11): 2730-2736 (2010)
2000 – 2009
- 2008
- [c2]Behzad Ebrahimi, Saeed Zeinolabedinzadeh, Ali Afzali-Kusha:
Low Standby Power and Robust FinFET Based SRAM Design. ISVLSI 2008: 185-190 - 2007
- [c1]Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp:
The effect of noise and depolarization on hyperpolarized tracers perfusion assessment. ISBI 2007: 137-140
Coauthor Index
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