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Kazuki Fukuoka
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2020 – today
- 2023
- [c10]Kenichi Shimada, Keiichiro Sano, Kazuki Fukuoka, Hiroshi Morita, Masayuki Daito, Tatsuya Kamei, Hiroyuki Hamasaki, Yasuhisa Shimazaki:
A 33kDMIPS 6.4W Vehicle Communication Gateway Processor Achieving 10Gbps/W Network Routing, 40ms CAN Bus Start-Up and 1.4mW Standby Power. ISSCC 2023: 240-241
2010 – 2019
- 2019
- [c9]Toshifumi Uemura, Yuko Kitaji, Kazuki Fukuoka:
A 28nm fully digital voltage monitor with 16.5uV/°C accuracy and 0.8mV quantized error from -40 to 160°C for ISO26262 ASIL-D capable MCU. A-SSCC 2019: 129-132 - 2017
- [j4]Shinichi Shibahara
, Chikafumi Takahashi, Kazuki Fukuoka, Yuko Kitaji, Takahiro Irita, Hirotaka Hara, Yasuhisa Shimazaki, Jun Matsushima:
A 16 nm FinFET Heterogeneous Nona-Core SoC Supporting ISO26262 ASIL B Standard. IEEE J. Solid State Circuits 52(1): 77-88 (2017) - 2016
- [j3]Takao Nomura, Ryo Mori, Koji Takayanagi, Kazuki Fukuoka, Koji Nii:
Design Challenges in 3-D SoC Stacked With a 12.8 GB/s TSV Wide I/O DRAM. IEEE J. Emerg. Sel. Topics Circuits Syst. 6(3): 364-372 (2016) - [c8]Chikafumi Takahashi, Shinichi Shibahara, Kazuki Fukuoka, Jun Matsushima, Yuko Kitaji, Yasuhisa Shimazaki, Hirotaka Hara, Takahiro Irita:
4.5 A 16nm FinFET heterogeneous nona-core SoC complying with ISO26262 ASIL-B: Achieving 10-7 random hardware failures per hour reliability. ISSCC 2016: 80-81 - 2015
- [j2]Mitsuhiko Igarashi
, Toshifumi Uemura, Ryo Mori, Hiroshi Kishibe, Midori Nagayama, Masaaki Taniguchi, Kohei Wakahara, Toshiharu Saito, Masaki Fujigaya, Kazuki Fukuoka, Koji Nii, Takeshi Kataoka, Toshihiro Hattori:
A 28 nm High-k/MG Heterogeneous Multi-Core Mobile Application Processor With 2 GHz Cores and Low-Power 1 GHz Cores. IEEE J. Solid State Circuits 50(1): 92-101 (2015) - 2014
- [c7]Mitsuhiko Igarashi
, Toshifumi Uemura, Ryo Mori, Noriaki Maeda, Hiroshi Kishibe, Midori Nagayama, Masaaki Taniguchi, Kohei Wakahara, Toshiharu Saito, Masaki Fujigaya, Kazuki Fukuoka, Koji Nii, Takeshi Kataoka, Toshihiro Hattori:
10.2 A 28nm HPM heterogeneous multi-core mobile application processor with 2GHz cores and low-power 1GHz cores. ISSCC 2014: 178-179 - 2013
- [j1]Kazuki Fukuoka, Noriaki Maeda, Koji Nii, Masaki Fujigaya, Noriaki Sakamoto, Takao Koike, Takahiro Irita, Kohei Wakahara, Tsugio Matsuyama, Keiji Hasegawa, Toshiharu Saito, Akira Fukuda, Kaname Teranishi, Takeshi Kataoka, Toshihiro Hattori:
Power-Management Features of R-Mobile U2, an Integrated Application Processor and Baseband Processor. IEEE Micro 33(6): 26-36 (2013) - [c6]Takao Nomura, Ryo Mori, Munehiro Ito, Koji Takayanagi, Toshihiko Ochiai, Kazuki Fukuoka, Kazuo Otsuga, Koji Nii, Sadayuki Morita, Tomoaki Hashimoto, Tsuyoshi Kida, Junichi Yamada, Hideki Tanaka:
Testability improvement for 12.8 GB/s Wide IO DRAM controller by small area pre-bonding TSV tests and a 1 GHz sampled fully digital noise monitor. CICC 2013: 1-4 - [c5]Masaki Fujigaya, Noriaki Sakamoto, Takao Koike, Takahiro Irita, Kohei Wakahara, Tsugio Matsuyama, Keiji Hasegawa, Toshiharu Saito, Akira Fukuda, Kaname Teranishi, Kazuki Fukuoka, Noriaki Maeda, Koji Nii, Takeshi Kataoka, Toshihiro Hattori:
A 28nm High-κ metal-gate single-chip communications processor with 1.5GHz dual-core application processor and LTE/HSPA+-capable baseband processor. ISSCC 2013: 156-157 - 2012
- [c4]Kazuki Fukuoka, Ryo Mori, A. Kato, Motoshige Igarashi, Koji Shibutani, T. Yamaki, Shinji Tanaka, Koji Nii, Sadayuki Morita, Takao Koike, Noriaki Sakamoto:
A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology. CICC 2012: 1-4
2000 – 2009
- 2004
- [c3]Masaaki Iijima, Katsuya Fujita, Kazuki Fukuoka, Masahiro Numa, Keisuke Yamamoto, Kengo Takata:
A technique for high-speed circuits on SOI using look-ahead type active body bias control. ISCAS (2) 2004: 405-408 - [c2]Kazuki Fukuoka, Masaaki Iijima, Kenji Hamada, Masahiro Numa, Akira Tada:
Leakage power reduction for clock gating scheme on PD-SOI. ISCAS (2) 2004: 613-616 - [c1]Kazuki Fukuoka, Masaaki Iijima, Kenji Hamada, Masahiro Numa, Akira Tada:
A Novel Layout Approach Using Dual Supply Voltage Technique on Body-Tied PD-SOI. PATMOS 2004: 423-432
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