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Microelectronics Journal, Volume 144
Volume 144, February 2024
- Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao:
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. 106058 - Sushmita Kumari, Puja Ghosh:
Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET. 106059 - Baojun Liu, Xiaokuo Yang, Jing Zhu:
Variations of single event transient induced by line edge roughness (LER) and temperature in FinFET. 106063
- Rong Zhou, Jianhang Yang, Linwei Wang, Xiaoteng Zhao, Shubin Liu, Depeng Sun:
A wideband low power RF Receiver Front-End for Internet-of-Things applications. 106064
- Chia-Wei Pai, Ken Uchida, Munehiro Tada, Hiroki Ishikuro:
Design and analysis of a high-speed low-power comparator with regeneration enhancement and through current suppression techniques from 4 K to 300 K in 65-nm Cryo-CMOS. 106066 - Fengjuan Wang, Jilin Kou, Xiangkun Yin, Jiangfan Liu, Kai Jing, Ningmei Yu, Yuan Yang, Qian Li:
A compact fifth-order SIW BPF based on TSV technology with high selectivity. 106067 - Cong Wei, Chengying Chen, Gongxing Huang, Lijie Huang, Renping Wang, Rongshan Wei:
A 1.8 V 98.6 dB SNDR discrete-time CMOS delta-sigma ADC. 106069 - Aditi Roy, Kokila Jagadeesh, Ramasubramanian Natarajan, B. Shameedha Begum:
OTK-based PUF CRP obfuscation for IoT device authentication. 106070 - Tammisetti Ashok, Chandan Kumar Pandey:
Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performance. 106071 - Jingchang Bian, Zhengfeng Huang, Yankun Lin, Zhao Yang, Huaguo Liang, Tianming Ni:
Reliability analysis and comparison of ring-PUF based on probabilistic models. 106072 - Aryan Kannaujiya, Abhay Pratap Singh, Ambika Prasad Shah:
Noninverting Schmitt trigger circuit with electronically tunable hysteresis. 106073 - Zhigang Shen, Wensuo Chen:
Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar. 106074 - Junyi Qian, Yuxin Ji, Cai Li:
A runtime-reconfigurable convolutional engine using tensor multiplication with multiple computing modes in 22-nm CMOS. 106075 - Yuming Li, Shuai Peng, Weiliang Peng, Yang Chen, Zhiming Li, Jie Zhang, Xiaofei Wang, Hong Zhang:
A 10-kHz BW 104.3-dB DR discrete-time delta-sigma modulator with ring-amplifier-based integrator. 106076 - Tiancheng Li, Erping Li, Huali Duan, Zhufei Chu, Jian Wang, Wenchao Chen:
Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor. 106083 - Shengqi Li, Guodong Su, Xiang Wang, Jun Liu:
A 8-12 GHz power amplifier with high out-of-band rejection. 106084 - Hongfei Ke, Hao Li, Peiyong Zhang:
High-performance montgomery modular multiplier with NTT and negative wrapped convolution. 106085 - Chenghu Dai, Zihua Ren, Lijun Guan, Haitao Liu, Mengya Gao, Wenjuan Lu, Zhiyong Pang, Chunyu Peng, Xiulong Wu:
A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations. 106087 - Yongliang Chen, Xiaole Cui, Xiaoxin Cui, Xing Zhang:
The area-efficient gate level information flow tracking schemes of digital circuit with multi-level security lattice. 106088 - Yanan Tao, Chao Liang, Ziqi Mei, Zhiqiang Song, Yu Wu, Yunna Sun, Wenqiang Zhang, Yong Ruan, Xiaoguang Zhao:
Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system. 106089
- Rong Zhou, Linwei Wang, Jianhang Yang, Zhen Li, Xiaoteng Zhao, Shubin Liu:
A 8.1-nW, 4.22-kHz, -40-85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications. 106090
- Xintong Xie, Shuxiang Sun, Zhijia Zhao, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo:
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. 106091 - Yang Chen, Binyu Cai, Changhuan Chen, Weiliang Peng, Quan Sun, Xiaofei Wang, Hong Zhang:
A 2-2 MASH ΔΣ ADC with fast-charge CLS input buffer and dual double sampling achieving 103.3-dB SNDR and ±2.5-ppm/FSR INL. 106092 - Huicheng Zhao, Bo Yu, Ning Wei, Hongzhen Chu, Yuehua Li, Xinlin Wang, Hongyu He:
A 6T1C pixel circuit compensating for TFT electrical characteristics variations, voltage drop, and OLED degradation. 106093 - Ali Badawy, Ayman H. Ismail:
Inverter-based noise-shaping SAR ADC for low-power applications. 106094 - Jiale Ding, Yukai Huang, Hao Zhang, Tian Feng, Feida Wang, Dengquan Li, Zhangming Zhu:
A 0.55-mm2 8-bit 32-GS/s TI-SAR ADC with optimized hierarchical sampling architecture. 106095 - Ge Shi, Xiangzhan Hu, Shengyao Jia, Xing Liang, Yanwei Sun, Mang Shi, Binrui Wang:
Single inductor multi-PZTs SECE and electromagnetic voltage multiplier rectifier hybrid interface circuit. 106096 - T. S. Manivannan, K. R. Pasupathy, Mohd Rizwan Uddin Shaikh, G. Lakshminarayanan:
Optimization of DE-QG TFET using novel CIP and DCT techniques. 106097 - K. Manikanta, Umakanta Nanda, Chandan Kumar Pandey:
Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components. 106100 - Qisheng Yu, Zhengyuan Zhang, Aohang Zhang, Jiaweiwen Huang, Wensuo Chen:
Comprehensive experimental study on Schottky contact super barrier rectifier. 106101
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