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ORCIDRongshan Wei
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- affiliation: Fuzhou University, Fujian, China
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2020 – today
- 2025
[j23]Disi Lin, Chuandong Chen, Rongshan Wei, Qinghai Liu, Huan He, Ziran Zhu, Zhifeng Lin
, Jianli Chen:
Two stage Ordered Escape Routing combined with LP and heuristic algorithm for large scaled PCB. Integr. 100: 102270 (2025)- 2024
- [j22]Cong Wei, Rongshan Wei, Lijie Huang, Gongxing Huang, Jinze Lai, Zhichao Tan:
An Energy-Efficient Discrete-Time Delta-Sigma Modulator With Dynamic-Range Enhancement and Tri-Level CDAC. IEEE J. Solid State Circuits 59(9): 2848-2857 (2024) - [j21]Cong Wei, Chengying Chen, Gongxing Huang, Lijie Huang, Renping Wang, Rongshan Wei:
A 1.8 V 98.6 dB SNDR discrete-time CMOS delta-sigma ADC. Microelectron. J. 144: 106069 (2024) - [j20]Gongxing Huang, Cong Wei, Rongshan Wei:
A 94.5-dB SNDR 96.5-dB DR discrete-time delta-sigma modulator using FIA assisted OTA and FIR DAC feedback. Microelectron. J. 150: 106278 (2024) - [j19]Gongxing Huang, Cong Wei, Rongshan Wei:
A 90.9 dB SNDR 95.3 dB DR Audio Delta-Sigma Modulator with FIA-Assisted OTA. Sensors 24(5): 1449 (2024) - 2023
- [j18]Qibin Chen, Yihong Gong, Ruiyong Tu, Jin Xie, Haiyan Dai, Yinrong Chen, Rongshan Wei, Jinghu Li, Zhicong Luo:
A 1.2-V 0.959-ppm/°C multi-section curvature-compensated bandgap voltage reference with trimming. Microelectron. J. 136: 105769 (2023) - [j17]Rongshan Wei, Gongxing Huang, Wei Hu, Cong Wei, Huishan Lin:
A 24-kHz BW 90.5-dB SNDR 96-dB DR continuous-time delta-sigma modulator using FIR DAC feedback. Microelectron. J. 138: 105858 (2023) - [j16]Rongshan Wei, Qikun Zhou, Xuanfei Weng, Yuxuan Lin, Gumeng Zhao, Cong Wei:
Analysis and design of a new shift monotonic switching procedure for SAR ADC. Microelectron. J. 141: 105975 (2023) - [j15]Rongshan Wei, Cong Wei, Lijie Huang, Gongxing Huang, Renping Wang, Wei Hu:
Low power capacitive-to-digital converter based on incremental delta-sigma modulator. Microelectron. J. 142: 106025 (2023) - [j14]Rongshan Wei, Huishan Lin, Qunchao Chen, Gongxing Huang, Wei Hu:
A CMOS Temperature Sensor with a Smart Calibrated Inaccuracy of ±0.11 (3σ). Sensors 23(11): 5132 (2023) - [c7]Chuandong Chen, Dishi Lin, Rongshan Wei, Qinghai Liu, Ziran Zhu, Jianli Chen:
Efficient Global Optimization for Large Scaled Ordered Escape Routing. ASP-DAC 2023: 535-540 - [c6]Cong Wei, Rongshan Wei, Lijie Huang, Gongxing Huang, Jinze Lai, Zhichao Tan:
A 1.2 V 2.3 µW 94.7 dB DR Delta-Sigma Modulator With Dynamic-Range Enhancement and Tri-Level CDAC. A-SSCC 2023: 1-3 - 2022
- [j13]Rongshan Wei, Fangjun Lin, Qunchao Chen:
A continuous time level-crossing ADC with adaptive sampling for biomedical application. IEICE Electron. Express 19(6): 20220072 (2022) - [j12]Xingchen Li, Zhihang Yuan, Yijin Guan, Guangyu Sun, Tao Zhang, Rongshan Wei, Dimin Niu:
Flatfish: A Reinforcement Learning Approach for Application-Aware Address Mapping. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(11): 4758-4770 (2022) - 2021
- [j11]Cong Wei, Rongshan Wei, Minghua He:
Bootstrapped switch with improved linearity based on a negative-voltage bootstrapped capacitor. IEICE Electron. Express 18(7): 20210062 (2021) - [j10]Cong Wei, Jianhan Wu, Rongshan Wei, Minghua He:
High-Fidelity and High-Efficiency Digital Class-D Audio Power Amplifier. J. Electr. Comput. Eng. 2021: 5533745:1-5533745:10 (2021) - [j9]Shaoqing Mo, Rongshan Wei, Zhuoqu Zeng, Minghua He:
A multiple-sensitivity Hall sensor featuring a low-cost temperature compensation circuit. Microelectron. J. 113: 105067 (2021) - 2020
- [j8]Gongxing Huang, Rongshan Wei, Wanjin Wang, Qunchao Chen:
A low power read-out integrated circuit for multiple sensors. IEICE Electron. Express 17(17): 20200199 (2020) - [c5]Rongshan Wei, Zhiyun Zhu:
Low Resource Call of FFT Circuit Design. ICIIT 2020: 127-132
2010 – 2019
- 2019
- [j7]Rongshan Wei, Wanjin Wang, Xiaoxia Xiao, Qunchao Chen:
A Low-Power Delta-Sigma Capacitance-to-Digital Converter for Capacitive Sensors. IEEE Access 7: 78281-78288 (2019) - [j6]Wei Hu, Haibo Luo, Chuandong Chen, Rongshan Wei:
A Multi-Interval Homotopy Analysis Method Using Multi-Objective Optimization for Analytically Analyzing Chaotic Dynamics in Memristive Circuit. IEEE Access 7: 116328-116341 (2019) - [j5]Wei Hu, Rongshan Wei, Jinbiao Lin:
Analytic analysis for effects of input initial phase on input-output dynamics of memristor. IEICE Electron. Express 16(10): 20190154 (2019) - [j4]Rongshan Wei, Zhuoqu Zeng, Jue Wang:
Smart power management with combined current-feedback low-dropout voltage regulator and switched capacitor DC-DC converter in 180 nm CMOS. Microelectron. J. 87: 121-126 (2019) - [c4]Jiexian Ge, Xiaoxin Cui, Kanglin Xiao, Chenglong Zou, Yi-Hsiang Chen, Rongshan Wei:
BNReLU: Combine Batch Normalization and Rectified Linear Unit to Reduce Hardware Overhead. ASICON 2019: 1-4 - [c3]Sheng Zhang, Song Jia, Hanzun Zhang, Rongshan Wei, Weixin Gai:
Design of an Adaptive Loop Gain Controller Based on Auto-correlation Detection Scheme in All-Digital Phase-Locked Loop. ASICON 2019: 1-4 - 2018
- [j3]Rongshan Wei, Jue Wang, Haiji Su:
A fast-response reference voltage buffer for a sigma-delta modulator. IEICE Electron. Express 15(8): 20180159 (2018) - [j2]Chuandong Chen, Rongshan Wei, Shaohao Wang, Wei Hu:
Novel Verification Method for Timing Optimization Based on DPSO. VLSI Design 2018: 8258397:1-8258397:8 (2018) - 2017
- [j1]Rongshan Wei, Xingang Zhang:
Efficient VLSI Huffman encoder implementation and its application in high rate serial data encoding. IEICE Electron. Express 14(21): 20170976 (2017) - 2015
- [c2]Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Zhong-Zhen Yu, Rongshan Wei:
Graphene oxide and TiO2 nano-particle composite based nonvolatile memory. NVMTS 2015: 1-4 - [c1]Wenqiang Luo, Fang-Yuan Yuan, Huaqiang Wu, Liyang Pan, Ning Deng, Fei Zeng, Rongshan Wei, Xuanjing Cai:
Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT: PSS/Ta memristor. NVMTS 2015: 1-4
Coauthor Index
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