(CLEO). Conference on Lasers and Electro-Optics, 2005., 2005
... ps. The sample is explored via time-resolved pump and probe spectroscopy using 120fs pulses a... more ... ps. The sample is explored via time-resolved pump and probe spectroscopy using 120fs pulses at 810nm for the pump, and around 1550 nm for the probe. The ... experimental results. It is possible to trace back their origin from Eq. 6. The ...
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 1999
We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitax... more We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17°C and 101°C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible
Postconference Digest Quantum Electronics and Laser Science, 2003. QELS., 2003
Skip to Main Content. IEEE.org | IEEE Xplore Digital Library | IEEE Standards Association | Spect... more Skip to Main Content. IEEE.org | IEEE Xplore Digital Library | IEEE Standards Association | Spectrum Online | More IEEE Sites. IEEE Xplore Digital Library. Search Term(s). Advanced Search | Preferences | Search Tips. ...
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
ABSTRACT Heterogeneous integration of III-V semiconductors on Silicon is one of the key technolog... more ABSTRACT Heterogeneous integration of III-V semiconductors on Silicon is one of the key technologies for next-generation on-chip optical interconnects. We extended this approach to nanophotonics by using photonic crystals to demonstrate highly efficient active devices.
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007
ABSTRACT We manufactured an optically active InP-on-insulator structure using spin-on-glass bondi... more ABSTRACT We manufactured an optically active InP-on-insulator structure using spin-on-glass bonding. A ninefold improvement of photoluminescence was obtained by patterning a photonic crystal with graphite lattice into the InP layer.
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006
Among all the components that have to be integrated in the future photonic microship, the optical... more Among all the components that have to be integrated in the future photonic microship, the optical transistor is certainly one the most important because it enables logical processing and storage of information. One way to achieve an optical transistor is to perform optical bistability. ...
In conclusion wafer-bonding of GaAs on InP is an efficient method to realize vertical cavity all-... more In conclusion wafer-bonding of GaAs on InP is an efficient method to realize vertical cavity all-optical switching devices operating at 1.55 μm wavelength. It combines very efficiently the active optoelectronic properties of InP-based materials with the advantageous optical and thermal properties of GaAs-AlAs Bragg reflectors
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004., 2004
ABSTRACT We report experimental results on a two dimensional Al0.3Ga0.7As photonic crystal slab w... more ABSTRACT We report experimental results on a two dimensional Al0.3Ga0.7As photonic crystal slab which exhibits a 1.6 nm full width at half maximum resonance around 1.5 μm in reflectivity at normal incidence with respect to the plane of periodicity. The slab is supported by an AlOx low index thick layer that plays the role of an efficient heat sink. Light with peak intensity greater than 10 GW/cm2 can be incident on the slab without damaging the sample.
Physical review. B, Condensed matter, Jan 15, 1988
The contribution of many-body effects in the optical nonlinearity of excitons in multiple quantum... more The contribution of many-body effects in the optical nonlinearity of excitons in multiple quantum wells is studied through optical pump-and-probe experiments. It is found that, when a dense electron-hole population is photoexcited, the renormalization of unoccupied subbands is relatively weak, in contrast to the strong effect observed in luminescence. This result points out the limitations of the rigid-shift model for
Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, 2009
ABSTRACT We theoretically and experimentally study how the phase-locking mechanism changes effect... more ABSTRACT We theoretically and experimentally study how the phase-locking mechanism changes effective dispersion of the medium at the harmonic frequencies making them become localized inside a opaque cavity designed to be resonant for the fundamental field.
ABSTRACT In this work we present the first experimental demonstration of a novel class of heterog... more ABSTRACT In this work we present the first experimental demonstration of a novel class of heterogeneously integrated III V-on-silicon microlasers. We first show that by coupling a silicon cavity to a III-V wire, the interaction between the propagating mode in the III-V wire and the cavity mode in the silicon resonator results in high, narrow band reflection back into the III-V waveguide, forming a so-called resonant mirror. By combining two such mirrors and providing optical gain in the III-V wire in between these 2 mirrors, laser operation can be realized. We simulate the reflectivity spectrum of such a resonant mirror using 3D FDTD and discuss the results. We also present experimental results of the very first optically pumped heterogeneously integrated resonant mirror laser. The fabricated device measures 55 μm by 2 μm and shows single mode laser emission with a side-mode suppression ratio of 37 dB.
(CLEO). Conference on Lasers and Electro-Optics, 2005., 2005
... ps. The sample is explored via time-resolved pump and probe spectroscopy using 120fs pulses a... more ... ps. The sample is explored via time-resolved pump and probe spectroscopy using 120fs pulses at 810nm for the pump, and around 1550 nm for the probe. The ... experimental results. It is possible to trace back their origin from Eq. 6. The ...
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 1999
We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitax... more We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17°C and 101°C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible
Postconference Digest Quantum Electronics and Laser Science, 2003. QELS., 2003
Skip to Main Content. IEEE.org | IEEE Xplore Digital Library | IEEE Standards Association | Spect... more Skip to Main Content. IEEE.org | IEEE Xplore Digital Library | IEEE Standards Association | Spectrum Online | More IEEE Sites. IEEE Xplore Digital Library. Search Term(s). Advanced Search | Preferences | Search Tips. ...
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
ABSTRACT Heterogeneous integration of III-V semiconductors on Silicon is one of the key technolog... more ABSTRACT Heterogeneous integration of III-V semiconductors on Silicon is one of the key technologies for next-generation on-chip optical interconnects. We extended this approach to nanophotonics by using photonic crystals to demonstrate highly efficient active devices.
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007
ABSTRACT We manufactured an optically active InP-on-insulator structure using spin-on-glass bondi... more ABSTRACT We manufactured an optically active InP-on-insulator structure using spin-on-glass bonding. A ninefold improvement of photoluminescence was obtained by patterning a photonic crystal with graphite lattice into the InP layer.
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006
Among all the components that have to be integrated in the future photonic microship, the optical... more Among all the components that have to be integrated in the future photonic microship, the optical transistor is certainly one the most important because it enables logical processing and storage of information. One way to achieve an optical transistor is to perform optical bistability. ...
In conclusion wafer-bonding of GaAs on InP is an efficient method to realize vertical cavity all-... more In conclusion wafer-bonding of GaAs on InP is an efficient method to realize vertical cavity all-optical switching devices operating at 1.55 μm wavelength. It combines very efficiently the active optoelectronic properties of InP-based materials with the advantageous optical and thermal properties of GaAs-AlAs Bragg reflectors
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004., 2004
ABSTRACT We report experimental results on a two dimensional Al0.3Ga0.7As photonic crystal slab w... more ABSTRACT We report experimental results on a two dimensional Al0.3Ga0.7As photonic crystal slab which exhibits a 1.6 nm full width at half maximum resonance around 1.5 μm in reflectivity at normal incidence with respect to the plane of periodicity. The slab is supported by an AlOx low index thick layer that plays the role of an efficient heat sink. Light with peak intensity greater than 10 GW/cm2 can be incident on the slab without damaging the sample.
Physical review. B, Condensed matter, Jan 15, 1988
The contribution of many-body effects in the optical nonlinearity of excitons in multiple quantum... more The contribution of many-body effects in the optical nonlinearity of excitons in multiple quantum wells is studied through optical pump-and-probe experiments. It is found that, when a dense electron-hole population is photoexcited, the renormalization of unoccupied subbands is relatively weak, in contrast to the strong effect observed in luminescence. This result points out the limitations of the rigid-shift model for
Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, 2009
ABSTRACT We theoretically and experimentally study how the phase-locking mechanism changes effect... more ABSTRACT We theoretically and experimentally study how the phase-locking mechanism changes effective dispersion of the medium at the harmonic frequencies making them become localized inside a opaque cavity designed to be resonant for the fundamental field.
ABSTRACT In this work we present the first experimental demonstration of a novel class of heterog... more ABSTRACT In this work we present the first experimental demonstration of a novel class of heterogeneously integrated III V-on-silicon microlasers. We first show that by coupling a silicon cavity to a III-V wire, the interaction between the propagating mode in the III-V wire and the cavity mode in the silicon resonator results in high, narrow band reflection back into the III-V waveguide, forming a so-called resonant mirror. By combining two such mirrors and providing optical gain in the III-V wire in between these 2 mirrors, laser operation can be realized. We simulate the reflectivity spectrum of such a resonant mirror using 3D FDTD and discuss the results. We also present experimental results of the very first optically pumped heterogeneously integrated resonant mirror laser. The fabricated device measures 55 μm by 2 μm and shows single mode laser emission with a side-mode suppression ratio of 37 dB.
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