Bipolar Junction Transistor

The invention of the bipolar transistor in 1948 helped in a revolution in electronics

William Shockley

If we join two individual diodes back-to-back, this will give us two PN-
junctions connected in series that share a common P or N. This produces a
three-layer, two junction, three terminal device forming the basis of a
Bipolar Junction Transistor, or BJT for short.
 Bipolar Junction Transistor

Transistor Type
- Junction FET
- Metal oxide semiconductor FET (MOSFET)
- Unijunction FET (UJT)
 Bipolar Junction Transistor

Transistors are three terminal active devices made from different

semiconductor materials that can act as either an insulator (OFF) or a
conductor (ON) by the application of a small signal voltage (control signal).

The transistor’s ability to change between these two states enables it to have
two basic functions: “Switching” (Digital Electronics) or “Amplification”
(Analogue Electronics).
 Bipolar Junction Transistor

There are two basic types of bipolar transistor construction, PNP and NPN,
which basically describes the physical arrangement of the P-type and N-type
semiconductor materials from which they are made.
The Bipolar Transistor basic construction consists of two PN-junctions
producing three connecting terminals with each terminal being given a name
to identify it from the other two. These three terminals are known and
labelled as Emitter (E), Base (B) and Collector (C). Each terminal is provided
with a pin contact for connection to a circuit.
 Bipolar Junction Transistor

Bipolar Transistors are current regulating devices (current-controlled current regulators)

that control the amount of current flowing through them in proportion to the amount of
biasing voltage applied to their base terminal acting like a current-control switch.

In other words, transistors restrict the amount of current passing as a function of a small controlling current. The
main current that is controlled goes from collector to emitter, or from emitter to collector, depending on the type
of transistor it is (PNP or NPN). The small current that controls the main current goes from base to emitter, or
from emitter to base, once again depending on the kind of transistor it is (PNP or NPN).

The principle of operation of the two transistor types PNP and NPN is the same, the only
difference being in their biasing and the polarity of the power supply for each type.
Bipolar Junction Transistor
Bipolar Transistor Construction
 Bipolar Junction Transistor

The Bipolar Transistors can operate within three different regions:

 Active Region: The transistor operates as an “Amplifier”.

 Saturation Region: The transistor is “Fully-ON” operating as a switch.
 Cut-off Region: The transistor is “Fully-OFF” operating as a switch.
Bipolar Junction Transistor
Important Terms

Saturation region: Maximum current flows and transistor

acts like a closed switch from collector to emitter.

Cut off region: Near voltage axis of collector characteristic

graph. Transistor acts like an open circuit. Very small leakage
current flows.

Active region: Right of saturation and above cut off. Near-

linear relationship between terminal currents (IB, IC, IE).

Bias: DC terminal voltages and current of the transistor to set

a desired point of active operation (Q-point: quiescent point).
 Bipolar Junction Transistor
Formulas

The fundamental formula used to describe the behavior of a bipolar transistor within the
active region is:
𝑰 𝒄= 𝜷 𝑰 𝑩
Where IB is base current, IC is collector current, and  is current gain (10 to 500).

It should be noted that the current-gain formula applies if two rules are
met:
1. NPN transistor  VC  VE
PNP transistor  VE  VC
Otherwise, current will not flow through collector-emitter junction, no matter V B.

2. NPN transistor  Voltage drop from base to emitter of 0.7 V ()

PNP transistor  Voltage rise from base to emitter of 0.7 V ()
Otherwise, it will not pass a collector-to-emitter current.
Transistor Faucet Analogy

Transistor Faucet Analogy

 Bipolar Junction Transistor
Formulas

If we apply the law of conservation of current, we get the following useful expression
relating the emitter, collector, and base currents:
𝑰 𝑬= 𝑰 𝑪 + 𝑰 𝑩
𝑰 =𝜷 𝑰 → 𝑰 𝑬 = (  +𝟏 ) 𝑰 𝑩 → 𝑰 𝑬 ≈ 𝑰 𝑪
𝒄 𝑩

= + 0.7 V (npn)
= - 0.7 V (pnp) The two rules
VC  VE (npn)
VE  VC (pnp)
VC = VCC - RIC
It cannot be determined directly by applying the formulas.
𝑽 𝑪 =? It depends on the network that is connected to it.
It is calculated by applying Ohm’s law and using current-gain
relation, and finding the voltage drop across the resistor.
 Bipolar Junction Transistor
Example
Example 1. Given VCC = +20 V, VB = 5.6 V, R1 = 4.7 k, R2 = 3.3 k, and hFE = 100, find VE, IE, IB, IC and VC.

= +0.6 V
VE = VB – 0.6 V

VE = 5.6 V – 0.6 V = 5.0 V

IE = (VE – 0 V)/R2 = 5.0 V/3300  = 1.5 mA

IB = IE/(1+) = 1.5 mA/(1+100) = 0.015 mA

IC = IE – IB  IE = 1.5 mA

VC = VCC – R1 IC = 20 V –(1.5 mA)(4700 ) = 13 V

VC  VE and VCE = 8 V
VC  V E
= +0.7 V
 Bipolar Junction Transistor
Example

Example 2. Given VCC = +10 V, VB = 8.2 V, R1 = 560 , R2 = 2.8 k, and hFE = 100, find VE, IE, IB, IC and VC.

= + 0.6 V

VE = 8.2 V + 0.6 V = 8.8 V

IE = (VCC – VE)/R1 = (10 V – 8.8 V)/560  = 2.1 mA

IB = IE/(1+) = 2.1 mA/(1+100) = 0.02 mA

IC = IE – IB  IE = 2.1 mA

VC = 0 V + R2 IC = (2.1 mA)(2800 ) = 5.9 V

VE  VC and VEC = 2.9 V

 Bipolar Junction Transistor
Silicon transistor 2N2222

Maximum values which must not be exceeded in operation

Collector-Base Voltage (VCB) = 60 v
Collector-Emitter Voltage (VCE) = 30 v
Base-Emitter Voltage (VBE) = 5 v
Power dissipation = 500 mW
Temperature 125 C
npn
 Bipolar Junction Transistor
Types of Bipolar Transistors

- Small Signal. It can be used to amplify low-level signal but also can be used as switch. (1)
- Small Switching. They are used mainly as switches but also can be used as amplifiers. (1)
- High Frequency. They are used for small signals that run at high frequencies. (2)
- Power. They are used in high-power amplifiers and power supplies. (3)

(3)
(2)
(1)

(3)