MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE

BCR16HM OUTLINE DRAWING Dimensions

in mm

2 39.2 MAX
20.2 MAX
2-φ4.2
5.0 MIN

23.0MAX
3
20.1 MAX 2
21.6 MAX
1
30.0±0.2 3
1
1 T1 TERMINAL
7.0 7.0 2 T2 TERMINAL
8.25 3 GATE TERMINAL
φ2.0(T1,T2) 6.35 φ1.55(G)

6.35
7.95
GATE

9.75
T1 TERMINAL TERMINAL

22.5 MAX
INDICATION 1.5
INDICATION
• IT (RMS) ...................................................................... 16A

11 MAX
TRADEMARK
• VDRM ..............................................................400V/600V

2.6
3-φ1.3
• IFGT !, IRGT !, IRGT # ........................................... 30mA TYPE ∗
NAME LOT No.
• Viso ........................................................................ 2200V VOLTAGE Tb TEST POINT
CLASS
• UL Recognized: File No. E80276 BCR16HM (C TYPE)

APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
VDRM Repetitive peak off-state voltage ✽1 400 600 V
VDSM Non-repetitive peak off-state voltage ✽1 500 720 V

Symbol Parameter Conditions Ratings Unit

Commercial frequency, sine full wave, 360° conduction,
IT (RMS) RMS on-state current 16 A
Tb=82°C
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 170 A

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

I2t I2t for fusing 121 A2s
current
PGM Peak gate power dissipation 5 W
PG (AV) Average gate power dissipation 0.5 W
VGM Peak gate voltage 10 V
IGM Peak gate current 2 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
15 kg·cm
— Mounting torque Screw M4
1.47 N·m
— Weight 26 g
Viso Isolation voltage Ta=25°C, AC 1 minute, T 2 · T1 · G terminal to base 2200 V
✽1. Gate open.

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 3.0 mA
VTM On-state voltage Tb=25°C, I TM=25A, Instantaneous measurement — — 1.6 V
VFGT ! ! — — 1.5 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 1.5 V
VRGT # # — — 1.5 V
IFGT ! ! — — 30 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 30 mA
IRGT # # — — 30 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
R th (j-b) Thermal resistance Junction to base ✽4 — — 2.0 °C/ W

Critical-rate of rise of off-state

(dv/dt) c ✽3 — — V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance R th (b-f) in case of greasing is 0.5°C/W.

Voltage VDRM (dv/dt) c Commutating voltage and current waveforms

class (V) Test conditions (inductive load)
Symbol Min. Unit

R —
SUPPLY
1. Junction temperature
8 400 VOLTAGE TIME
Tj =125°C
L 10
2. Rate of decay of on-state commutat- MAIN CURRENT (di/dt)c
V/µs ing current TIME
(di/dt)c=–8A/ms
R — MAIN
3. Peak off-state voltage VOLTAGE TIME
12 600
VD =400V (dv/dt)c VD
L 10

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

103 200
7 Tb = 25°C
SURGE ON-STATE CURRENT (A)

5 180
ON-STATE CURRENT (A)

3 160
2
140
102
7 120
5
3 100
2
80
101
7 60
5
40
3
2 20
100 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
102 103
7 7 TYPICAL EXAMPLE
5
5
3 4
2 VGM = 10V
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

3

GATE TRIGGER CURRENT (Tj = t°C)

101 2
7 PG(AV) = PGM = 5W
5 0.5W
3 VGT = 1.5V 102
2 IGM = 2A 7
100 5
7 4
5 3
3 2
2
IFGT I, IRGT I, IRGT III VGD = 0.2V
10–1 101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE)
JUNCTION TEMPERATURE
102 2 3 5 7 103
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 4.0
7 TYPICAL EXAMPLE
3.6
5
4 3.2
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

2.8
2
2.4
102 2.0
7 1.6
5
4 1.2
3
0.8
2
0.4
101 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER ALLOWABLE BASE TEMPERATURE

DISSIPATION VS. RMS ON-STATE CURRENT
40 160
ON-STATE POWER DISSIPATION (W)

CURVES APPLY REGARDLESS

35 140 OF CONDUCTION ANGLE
BASE TEMPERATURE (°C)

30 360° 120
CONDUCTION
25 RESISTIVE, 100
INDUCTIVE
20 LOADS 80

15 60
360°
10 40 CONDUCTION
RESISTIVE,
5 20 INDUCTIVE
LOADS
0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE

100 (%)
ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION
VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
ALL FINS ARE BLACK PAINTED 7 TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5
AMBIENT TEMPERATURE (°C)

140 ALUMINUM AND GREASED

REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

NATURAL CONVECTION 3
120 160 160 t4.0 2
104
100 120 120 t3.0 7
80 80 t2.0 5
80 3
2
60
103
7
40 5
CURVES APPLY 3
20 REGARDLESS OF 2
CONDUCTION ANGLE
0 102
0 2 4 6 8 10 12 14 16 18 20 –60 –40 –20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 160
100 (%)
100 (%)

7 TYPICAL EXAMPLE TYPICAL EXAMPLE

5 140
4
3 120
BREAKOVER VOLTAGE (Tj = 25°C)
HOLDING CURRENT (Tj = 25°C)

BREAKOVER VOLTAGE (Tj = t°C)

HOLDING CURRENT (Tj = t°C)

2 100

102 80
7
5 60
4
3 40
2 20

101 0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS
100 (%)

CRITICAL RATE OF RISE OF OFF-STATE

160 102
TYPICAL EXAMPLE TYPICAL
COMMUTATING VOLTAGE (V/µs)

7 EXAMPLE
140 Tj = 125°C
5 TC = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

I QUADRANT 4
120 3 IT = 4A
III QUADRANT τ = 500µs
100 2 VD = 200V III QUADRANT
f = 3Hz
80 #2 101
#1
7
60 5 MINIMUM
4 CHARAC-
40 3 TERISTICS
2 VALUE I QUADRANT
20

0 100 0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 2 3 4 5 7 101 2 3 4 5 7 102

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

GATE CURRENT PULSE WIDTH
103 6Ω 6Ω
100 (%)

TYPICAL EXAMPLE
7
5 IFGT I
4
6V A 6V A
3 IRGT I
GATE TRIGGER CURRENT (DC)

RG RG
GATE TRIGGER CURRENT (tw)

2 IRGT III V V

102 TEST PROCEDURE 1 TEST PROCEDURE 2

7
5 6Ω
4
3
2
A
6V
101 V RG
100 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3

Feb.1999
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