Shri Ambabai Talim Sanstha’s
Sanjay Bhokare Group Of Institutes, Miraj
Faculty Of Engineering
Continuous Assessment - I Semester Examination
Programme: B.Tech Branch: Electronics & Computer Science Engineering
Course Code: Course Name: Electronics Devices & Circuits
Semester: III Academic Year: 2024 – 25
Date: 11/10/2024 Max Marks: 10
Time: 4.00 pm to 5.00pm Student PRN No.:
Instructions:
1. Assume suitable data, if necessary. 2. Neat Diagrams must be drawn wherever necessary.
3. Writing on question paper is not allowed. 4. Mobile and programmable calculators are not
allowed.
5. Attempt all questions. 6. Figures to the right indicate the full marks.
7. Write PRN Number on Question Paper. 8. Exchange / Sharing of stationery, calculator not
allowed.
Q1 Solve Any TWO of the Following Questions (3 x 2 Marks=6 Level Marks CO PO PSO
Marks)
PO
a. Explain Construction of N Channel FET with Symbols. 1 3M 1 12
1
PO1,
b. Explain Different Parameters of EMOSFET. 2 3M PO12
1
PO1,
c. Compare FET Configurations 3 3M PO12
Q2 Solve Any One of the following. (4 x 1 = 4 Marks)
Explain with circuit Diagram static Characteristics of N-Channel PO1 ,
2 1
a. FET 4M PO12
PO1,
Explain Construction of N-Channel EMOS FET 2 1 PO12
b. 4M
1/1
