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Pzt5551-Good-Ark (2025 - 05 - 19 10 - 59 - 36 Utc)

The PZT5551 is a high voltage NPN transistor designed for amplifier applications, with a maximum collector-base voltage of 180V and collector-emitter voltage of 160V. It features a collector current rating of 600mA and a power dissipation of 1W, with various electrical characteristics provided for performance evaluation. The device is packaged in SOT-223 and is RoHS compliant, available in quantities of 1000 pieces per reel.

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13 views4 pages

Pzt5551-Good-Ark (2025 - 05 - 19 10 - 59 - 36 Utc)

The PZT5551 is a high voltage NPN transistor designed for amplifier applications, with a maximum collector-base voltage of 180V and collector-emitter voltage of 160V. It features a collector current rating of 600mA and a power dissipation of 1W, with various electrical characteristics provided for performance evaluation. The device is packaged in SOT-223 and is RoHS compliant, available in quantities of 1000 pieces per reel.

Uploaded by

cupidon35c
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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PZT5551

NPN Transistor

Features
■ High voltage
■ For high voltage amplifier applications

SOT-223
Absolute Maximum Ratings (TA = 25 °C unless otherwise noted)
1. BASE

Parameter Symbol Value Unit 2. COLLECTOR

Collector-Base Voltage VCBO 180 V 3. EMITTER

Collector-Emitter Voltage VCEO 160 V


Emitter-Base Voltage VEBO 6 V

Collector Current IC 600 mA


Collector Power Dissipation PC 1 W
Thermal Resistance from
RθJA 125 ℃/W
Junction to Ambient
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55 to +150 ℃

Electrical Characteristics (TA = 25 °C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit


Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA,IE=0 180 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA,IB=0 160 V
Emitter-Base Breakdown Voltage V(BR)EBO IE=0.01mA,IC=0 6 V
Collector Cut-Off Current ICBO VCB=120V,IE=0 50 nA
Emitter Cut-Off Current IEBO VEB=4V,IC=0 50 nA
hFE(1) VCE=5V, IC=1mA 80
DC Current Gain hFE(2) VCE=5V, IC=10mA 80 250
hFE(3) VCE=5V, IC=50mA 30
IC=10mA,IB=1mA 0.15 V
Collector-Emitter Saturation Voltage VCE(sat)
IC=50mA,IB=5mA 0.2 V
IC=10mA,IB=1mA 1 V
Base-Emitter Saturation Voltage VBE(sat)
IC=50mA,IB=5mA 1 V
Transition Frequency fT VCE=10V,IC=10mA, f=100MHz 100 300 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Emitter Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz 20 pF

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PZT5551
NPN Transistor

Typical Characteristic Curves

2/4
PZT5551
NPN Transistor

Typical Characteristic Curves

Package Outline Dimensions SOT-223

Dimensions In Millimeters Dimensions In Inches


Symbol
Min. Max. Min. Max.
A —— 1.800 —— 0.071
A1 0.020 0.100 0.001 0.004
A2 1.500 1.700 0.059 0.067
b 0.660 0.840 0.026 0.033
b1 2.900 3.100 0.114 0.122
c 0.230 0.350 0.009 0.014
D 6.300 6.700 0.248 0.264
E 6.700 7.300 0.264 0.287
E1 3.300 3.700 0.130 0.146
e 2.300(BSC) 0.091(BSC)
L 0.750 —— 0.030 ——
θ 0° 10° 0° 10°

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PZT5551
NPN Transistor

Suggested Pad Layout

Marking and Ordering Information

Device Package Marking Quantity HSF Status


PZT5551 SOT-223 ZT5551 1000pcs / Reel RoHS Compliant

www.goodarksemi.com 4/4 Doc.USPZT5551xSC2.0

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