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Name: Guillermo, Thomas Ariell Yousef R. Date: Score:
Group #: 1 08/03/2025
Experiment No: 3
INTRODUCTION TO SEMICONDUCTOR DIODES
TLO 2: Develop skills in testing the semiconductor p-n junction diode using a VOM,
and demonstrate its I-V characteristic curve.
I. INTRODUCTION
Diodes are basic unidirectional semiconductor devices that will only allow
current to flow through them in one direction only, acting more like a one-
way electrical valve, (Forward Biased Condition). Diodes are made from a
single piece of Semiconductor material which has a positive “P-region” at
one end and a negative “N-region” at the other, and which has a resistivity
value somewhere between that of a conductor and an insulator.
The one – way behavior of the diodes is the result of the creation of a
depletion region at the P-N junction, which serves as a barrier for the
charge carriers’ movement. When a diode is forwarded – biased, external
voltages reduce this barrier, thus allowing electrons from N and P regions to
recombine and enable current flow (Neamen, D. A. (2012).
Microelectronics: Circuit Analysis and Design). On the other hand, when the
diode is biased reversely, the depletion region grows larger, thus keeping
large amounts of current from flowing (Sedra, A. S., & Smith, K. C. (2020).
Microelectronic Circuits).
Diodes are widely used in rectification, upon which they provide the
conversion of AC to DC. Bridge rectifier circuits in power supplies use
multiple diodes to provide constant DC output (Streetman, B. G., &
Banerjee, S. (2016). Solid State Electronic Devices). Other specialized diodes
like Zener diodes provide voltage regulation in circuits while LEDs, in forward
bias conditions, emit light by electroluminescence.
As semiconductors become more advanced, diodes continue to play a
crucial role in modern electronics. High – speed switch diodes find
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application in telecommunication and computation, whereas Schottky
diodes provide low forward voltage drop for optimal power management.
Ongoing semiconductor research on material like gallium nitride & silicon
carbide portends that diode technologies will be more efficient and
performs at high power and frequencies (Pierret, R. F. (2003).
Semiconductor Device Fundamentals).
II. MATERIALS/ EQUIPMENT NEEDED
DC Power Supply : 0-25V
1 Digital VOM, 1 Analog VOM
1N4007 Silicon PN junction Diode
R1 - 100 Ω
Experiment Board K
Connecting leads
III. PROCEDURES
Objective A: Identify the anode and the cathode and test a semiconductor diode by
performing a forward-reversed resistance/voltage check by using a VOM.
1. A. Examine at least four silicon diodes and identify the cathode and anode
terminals. Describe how the cathode of a diode is marked.
______________________________________________________________
2. A. Set the digital VOM to the diode test mode.
Record the polarity of the VOM leads
Red lead/probe: _____________
Black lead/probe:_____________
B. Set the VOM to the diode test function. Connect the common lead (negative)
of the VOM to the cathode end of one of the silicon diodes, and the Ohm’s
lead (positive) to the anode end, as shown in figure 1.
VOM
Figure 1
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C. Measure the voltage across the diode. _______V
D. What does this data imply? _____________
E. Reverse the VOM connections to the diode, so the common lead is
connected to anode, and the Ohm’s lead to the cathode, as shown in Figure
2
VOM
Figure 2
F. Measure the voltage across the diode. _____V
G. What do the above data and results imply? ____
Objective B. Observe how the voltage drop and current through the load resistor is
affected by the supply voltage.
3. A. Connect the circuit shown in Figure 3. Be sure the polarity of the ammeter
and the voltmeter are correct.
Source Voltage A
0-25vDC R1 100Ω VDC
Figure 3
B. Gradually increase the source voltage until the measured voltage across R1 is
that stated in Table 1.
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C. Record current through R1. Record the current value in mA, up to 3 decimal
places, as shown on the ammeter display.
D. Repeat to obtain all measurements.
Table 1
Reading VR1 (V) IR1 (mA) Reading VR1 IR1
1 0 6 2.5
2 0.5 7 3
3 1 8 3.5
4 1.5 9 4
5 2 10 4.5
E. Plot Table 1 data: Current (y-axis) vs Voltage (x-axis
Objective C. Demonstrate characteristic curve of a semiconductor diode when the
diode is forward-biased, and when it is reverse-biased.
4. A. Connect the circuit shown in Figure 4. Be sure the polarity of the ammeter,
voltmeter, and the diode are correct.
R1 100Ω
Es
0-25V
VDC
Figure 4
B. Gradually increase the source voltage Es until the voltmeter indicates the
diode voltage enlisted on Table 2. Measure the forward bias current through
the diode for each diode voltage.
Table 2
Reading Vdiode(mV) Idiode Reading Vdiode Idiode
1 0 9 450
2 50 10 500
3 100 11 550
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4 150 12 600
5 200 13 650
6 250 14 700
7 300 15 750
8 400 16 800
C. At what voltage does the diode start to conduct (the instant when current
through it increases abruptly)? ___________
D. Plot Table 2 data: Current (y-axis) vs Voltage (x-axis)
5. A. Using the same circuit shown in Figure 4, reverse the polarity of the
semiconductor diode and the voltmeter across it.
B. Gradually increase the source voltage Es until the voltmeter indicates the
diode voltage enlisted on Table 3. Measure the reverse bias current through the
diode for each diode voltage. Remember to set your ammeter to the
microampere range if the current is too small to be read.
Table 3.
Reading Vdiode(mV) Idiode Reading Vdiode Idiode
1 0 9 450
2 50 10 500
3 100 11 550
4 150 12 600
5 200 13 650
6 250 14 700
7 300 15 750
8 400 16 800
C. Plot Table 3.
D. What does the readings in the Idiode column imply?
IV. RESULTS
Objective A: Identify the anode and the cathode and test a semiconductor diode by
performing a forward-reversed resistance/voltage check by using a VOM.
1. A. Examine at least four silicon diodes and identify the cathode and anode
terminals. Describe how the cathode of a diode is marked.
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Cathode (-); anode(+), cathode has a negative mark/sign, anode has a positive
mark/sign. Usually the cathode has a marking in the diode that is black.
2. A. Set the digital VOM to the diode test mode.
Record the polarity of the VOM leads
Red lead/probe: 0.515 V (Positive)
Black lead/probe: 0 V (Negative)
B. Set the VOM to the diode test function. Connect the common lead (negative)
of the VOM to the cathode end of one of the silicon diodes, and the Ohm’s
lead (positive) to the anode end, as shown in figure 1.
VOM
Figure 1
C. Measure the voltage across the diode. 0.515 V
D. What does this data imply? The current flows through the circuit. It is forward
biased (closed circuit).
E. Reverse the VOM connections to the diode, so the common lead is
connected to anode, and the Ohm’s lead to the cathode, as shown in Figure
2
VOM
Figure 2
F. Measure the voltage across the diode. 0 V
G. What do the above data and results imply? The current does not flow. It is
reversed bias (open circuit).
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Objective B. Observe how the voltage drop and current through the load resistor is
affected by the supply voltage.
3. A. Connect the circuit shown in Figure 3. Be sure the polarity of the ammeter
and the voltmeter are correct.
Source Voltage A
0-25vDC R1 100Ω VDC
Figure 3
B. Gradually increase the source voltage until the measured voltage across R1 is
that stated in Table 1.
C. Record current through R1. Record the current value in mA, up to 3 decimal
places, as shown on the ammeter display.
D. Repeat to obtain all measurements.
Table 1
Reading VR1 (V) IR1 (mA)
1 0 0
2 0.5 5.8
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3 1 10.09
4 1.5 15.09
5 2 20.13
6 2.5 25.07
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7 3 29.41
8 3.5 35.00
9 4 39.90
10 4.5 44.30
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As the voltage increases from 0V to 4.5V, the current also increases proportionally from
0mA to 44.30mA, indicating that R1 is a fixed resistor with a constant resistance. Minor
changes in current values could be the result of measurement inaccuracies or subtle
resistance variations. The readings establish that R1 follows Ohm's Law, i.e., it does not
follow nonlinear or semiconductor behavior. The consistent and linear response to the rise
in voltage makes the resistor appropriate for regulating current in a circuit.
E. Plot Table 1 data: Current (y-axis) vs Voltage (x-axis)
Objective C. Demonstrate characteristic curve of a semiconductor diode when the
diode is forward-biased, and when it is reverse-biased.
4. A. Connect the circuit shown in Figure 4. Be sure the polarity of the ammeter,
voltmeter, and the diode are correct.
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R1 100Ω
Es
0-25V
VDC
Figure 4
B. Gradually increase the source voltage Es until the voltmeter indicates the
diode voltage enlisted on Table 2. Measure the forward bias current through
the diode for each diode voltage.
Table 2
Reading Vdiode(mV) Idiode
1 0 0
2 50 0
3 100 0
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4 150 0
5 200 0
6 250 0.01
7 300 0.01
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8 400 0.08
9 450 0.14
10 500 0.4
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11 550 3.37
12 600 11.16
13 650 22.47
14 700 64.6
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15 750 191
16 800 325.1
First, between 0 mV and 200 mV, the current is still zero, which means the diode is in its
cutoff region and not conducting. When it is at 250 mV to 400 mV, a slight leakage current
is flowing, though it is very low (0.01–0.08 A), and this implies that the diode is still not
conducting. Nevertheless, when the voltage is 550 mV and above, the current begins
rising dramatically, from 0.4 A when the voltage is 500 mV to 3.37 A when the voltage is
550 mV, which signals the start of the forward conduction region. As the voltage increases
further, the current continues to rise exponentially to 325.1 A when the voltage is 800 mV,
which is a characteristic performance of a PN junction diode under forward bias. This
sudden increase in current shows that the diode has crossed its threshold voltage, and a
huge current is able to pass through. In general, the information verifies the nonlinear
exponential current-voltage (I-V) behavior of a diode, which is non-conducting at low
voltages and conducts heavily after crossing its threshold.
C. At what voltage does the diode start to conduct (the instant when current
through it increases abruptly)? 550mV
D. Plot Table 2 data: Current (y-axis) vs Voltage (x-axis)
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5. A. Using the same circuit shown in Figure 4, reverse the polarity of the
semiconductor diode and the voltmeter across it.
B. Gradually increase the source voltage Es until the voltmeter indicates the
diode voltage enlisted on Table 3. Measure the reverse bias current through the
diode for each diode voltage. Remember to set your ammeter to the
microampere range if the current is too small to be read.
Table 3.
Reading Vdiode(mV) Idiode
1 0 0
2 50 0
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3 100 0
4 150 0
5 200 0
6 250 0.01
7 300 0.01
8 400 0.01
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9 450 0.01
10 500 0.01
11 550 0.01
12 600 0.02
13 650 0.02
14 700 0.02
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15 750 0.02
16 800 0.02
First, between 0 mV and 200 mV, there is no reverse current observed, i.e., the diode can
block current in this range. When the voltage goes above 250 mV, a very small leakage
current (0.01−0.02 A) starts flowing. The current is still very low at 800 mV, proving that the
diode is not yet at its breakdown voltage. This is a characteristic of a reverse-biased
diode, where only a small amount of leakage current flows until it reaches the breakdown
area. The slow rise of leakage current might be caused by small movements of charge
carriers through the depletion region. Because the current is still in the microampere level,
the diode is still in its block state and is not in avalanche or Zener breakdown.
C. Plot Table 3.
D. What does the readings in the Idiode column imply?
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The Idiode readings indicate that the diode allows small leakage current in reverse
bias, which remains in the microampere to 800 mV ranges. This confirms that the
diode is operating normally without reaching breakdown, as a significant increase
in current has not yet occurred.
V. DISCUSSION
For Objective A, a semiconductor diode is a two-terminal electronic device that allows
current to flow in one direction (forward bias) but blocks the flow in the reverse direction
(reverse bias) (Boylestad & Nashelsky, 2020). The diode has two terminals: the cathode (-
) and the anode (+), where the cathode is usually marked by a black band (Sedra &
Smith, 2020). A volt-ohm-milliammeter (VOM) is used to test diodes by measuring their
resistance or voltage drop when subjected to both forward bias and reverse bias (Floyd,
2021). For forward bias, the anode is joined with the positive lead and the cathode with
the negative lead, with the flow of current usually accompanied by a normal voltage
drop of about 0.7V for silicon diodes (Malvino & Bates, 2019). When reversed, the anode
is joined to the negative lead while the cathode is joined to the positive lead, thereby
blocking the flow of current. The experiment confirms the one-way conduction property
of the diode by a reading of 0.515V on forward bias and 0V on reverse bias, thus proving
its rectifier function.
For Objective B, Ohm's Law dictates that current through a resistor is proportional to the
applied voltage across it (V = IR) (Alexander & Sadiku, 2017). When the source voltage
(Es) is increased in the experiment, so also increases the voltage across the resistor (VR1)
and current (IR1) accordingly. Table 1 readings are a linear relationship between voltage
and current, confirming R1 as a constant resistor with fixed resistance (Hambley, 2019).
Small discrepancies in the measured values of current could be due to measurement
errors or slight differences in resistance. The experiment confirms that resistance obeys
Ohm's Law and is employed to regulate circuit’s currents (Nilsson & Riedel, 2021). A
voltage-current (V-I) graph will be a straight-line graph, further confirming proportionality.
For Objective C, the semiconductor diode possesses nonlinear current-voltage (I-V)
characteristics, unlike that of a resistor (Boylestad & Nashelsky, 2020). Under forward bias,
the diode does not conduct current initially at lower voltages (cutoff region). At the
threshold voltage reached (around 550 mV for silicon diodes), the current rises
exponentially (Sedra & Smith, 2020). Under reverse bias, the diode blocks the current
completely from passing through, with only a very minute leakage current at the
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microampere range, as shown in Table 3. The diode stays in blocking mode up to the
breakdown voltage reached, resulting in a very sharp increase in current (the same
effect could not be observed in the current experiment) (Floyd, 2021). By plotting current
versus voltage (I-V curve), such behaviors are demonstrated, indicating the application
of the diode to rectification and switching roles (Hambley, 2019).
VI. CONCLUSION
In conclusion, the experiment illustrated the basic properties of semiconductor diodes
and resistors. The diode was tested using VOM, illustrating it can pass current in forward
bias and shut off current in reverse bias. This is fundamental behavior in electronic circuits,
especially in power conversion and signal processing. The resistor followed Ohm's Law,
showing a linear relationship between voltage and current, illustrating it is a constant
resistor with fixed resistance. The V-I curve confirmed the resistor's proportionality,
supporting its function to regulate current. The I-V characteristics of the diode illustrated
its nonlinear conduction, where current was very small until the threshold voltage (~550
mV) was reached, at which it increased exponentially. In reverse bias, the leakage
current was small, implying the diode was below its breakdown voltage. The results
illustrate how resistors and diodes function in electrical circuits, supporting basic circuit
analysis and design.
VII. REFERENCES
Boylestad, R. L., & Nashelsky, L. (2020). Electronic devices and circuit theory (11th ed.).
Pearson.
Floyd, T. L. (2021). Electronic devices: Conventional current version (10th ed.). Pearson.
Malvino, A. P., & Bates, D. J. (2017). Electronic principles (8th ed.). McGraw-Hill
Education.
Millman, J., & Grabel, A. (2017). Microelectronics (2nd ed.). McGraw-Hill Education.
Sedra, A. S., & Smith, K. C. (2020). Microelectronic circuits (8th ed.). Oxford University
Press.
Shen, J., & Chen, Y. (2018). Essentials of semiconductor physics. Springer.
Spencer, R. & Ghausi, M. (2002). Introduction to electronic circuit design. Prentice Hall.
ME 2251L: BASIC ELECTRONICS LABORATORY 21
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Streetman, B. G., & Banerjee, S. K. (2016). Solid state electronic devices (7th ed.).
Pearson.
Tocci, R. J., Widmer, N. S., & Moss, G. L. (2019). Digital systems: Principles and
applications (12th ed.). Pearson.
Zanoni, E. (2018). Power semiconductor devices: Theory and applications. Springer.
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