Transistors

2SC1509
Silicon NPN epitaxial planar type

For low-frequency driver amplification Unit: mm

5.9±0.2 4.9±0.2
Complementary to 2SA0777 (2SA777)

8.6±0.2
■ Features
• High collector-emitter voltage (Base open) VCEO
0.7±0.1
• Optimum for the driver stage of a low-frequency and 25 W to 30

0.7+0.3
–0.2
W output amplifier

13.5±0.5
■ Absolute Maximum Ratings Ta = 25°C

ue e/
Parameter Symbol Rating Unit

tin nc
Collector-base voltage (Emitter open) VCBO 80 V 0.45+0.2 0.45+0.2
–0.1

e)
–0.1

d
typ
Collector-emitter voltage (Base open) VCEO 80 V (1.27) (1.27)
1: Emitter

d
on e.
ue
Emitter-base voltage (Collector open) VEBO 5 V

isc ag
2: Collector

ed cle(3.2)

tin
1 2 3

, d st
on na
Collector current IC 0.5 A 3: Base
2.54±0.15 EIAJ: SC-51
Peak collector current ICP 1 A

yp cy
TO-92L-A1 Package

d t ife
Collector power dissipation PC 750 mW

ue t l
tin uc
Junction temperature Tj 150 °C
sc te

on rod
−55 to +150 °C
isc r P
Storage temperature Tstg
d d fou
Di ain

ne ng
pla wi
e, ollo

■ Electrical Characteristics Ta = 25°C ± 3°C

typ s f
ce de
an clu

Parameter Symbol Conditions Min Typ Max Unit

en in
M

IC = 10 µA, IE = 0
int ed

Collector-base voltage (Emitter open) VCBO 80 V

ma inu

Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 80 V

e, ont

Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V

typ isc
ce /D

Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA

an ce
en an

Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 130 330 

int ten

hFE2 VCE = 5 V, IC = 500 mA 50 100 

ma ain
M

Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.4 V

Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.2 V
ed

Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz

lan

VCB = 10 V, IE = 0, f = 1 MHz
(p

Collector output capacitance Cob 11 20 pF

(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
hFE1 130 to 220 185 to 330

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002 SJC00106BED 1

2SC1509

PC  Ta IC  VCE IC  I B
1.2 1.2 1.2
Ta = 25°C VCE = 10 V
Ta = 25°C
IB = 10 mA
Collector power dissipation PC (W)

1.0 1.0 1.0

9 mA

Collector current IC (A)

Collector current IC (A)

8 mA
0.8 7 mA
0.8 0.8
6 mA
5 mA
0.6 0.6 0.6
4 mA
3 mA
0.4 0.4 0.4
2 mA

0.2 0.2 1 mA 0.2

0 0 0
0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10

ue e/
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

tin nc

e)
VCE(sat)  IC VBE(sat)  IC hFE  IC

d
typ
10 100 300

d
IC / IB = 10 IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 10 V

on e.
ue
(V)

isc ag
tin
, d st
on na
BE(sat)

250

FE

ed cle
ratio h
1 10

yp cy
Base-emitter saturation voltage V

Ta = 75°C

d t ife
200

on Protransfer
ue t l
Ta = 75°C 25°C

tin duc
25°C
Ta = −25°C
sc te

0.1 25°C 1 150 −25°C

isc current

−25°C 75°C
r
d d fou

100
Forward
Di ain

ne ng

0.01 0.1
pla wi
e, ollo

50
typ s f
ce de

0.001 0.01 0
an clu

1 10 100 1 000 1 10 100 1 000 1 10 100 1 000

en in
M

Collector current IC (mA) Collector current IC (mA) Collector current IC (mA)

int ed
ma inu
e, ont
typ isc

fT  I E Cob  VCB ICBO  Ta

ce /D
an ce

200 VCB = 10 V 50 104

VCB = 20 V
int Cten (pF)

IE = 0
en an

Ta = 25°C
180 f = 1 MHz
ob

Ta = 25°C
ma ain
Transition frequency fT (MHz)

160 40
(Common base, input open circuited)

103
M

140
(T = 25°C)

120 30
(T )
Collector output capacitance
ed

a
lan

100 102
a
CBO
(p

80 20
I CBO

60
10
40 10

20

0 0 1
−1 −10 −100 1 10 100 0 60 120 180
Emitter current IE (mA) Collector-base voltage VCB (V) Ambient temperature Ta (°C)

2 SJC00106BED
 ICEO (Ta)
ICEO (Ta = 25°C)

1
10
102
103
104
105

0
20
40
60
80
ICEO  Ta

M
Ambient temperature Ta (°C)
(p
VCE = 10 V

lan

100 120 140

ed M
ma ain
Collector current IC (A)
int ten
en an
Di ain
0.001
0.01
0.1
1
10

an ce
0.1
IC

ce /D
ICP

typ isc
sc te
e, ont
1

ma inu
int ed
DC

en in

SJC00106BED
on na
an clu
10

ce de
t=1s
Safe operation area

typ s f
e, ollo
Ta = 25°C

t = 10 ms
Single pulse

Collector-emitter voltage VCE (V)

pla wi
100

tin nc
ne ng
d d fou
isc r P
on rod
tin uc
ue e/
ue t l
d t ife
yp cy
d ed cle
, d st
isc ag
on e.
tin
ue
d typ
e)

3
2SC1509
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

ue e/
Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

tin nc
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

e)
d
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

yp
defect which may arise later in your equipment.

dt
on e.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

ed cle
yp cy
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

d t ife
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

ue t l
tin uc
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
sc te

on rod
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
isc r P

Electric Industrial Co., Ltd.

d d fou
Di ain

ne ng
pla wi
e, ollo
typ s f
ce de
an clu
en in
M

int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
ed M
lan
(p