HIGH VOLTAGE N-Channel MOSFET

GD S

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FQ F8 N60 !

600V N-Channel MOSFET ◀ ▲

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●

Features
!
S
□ Low Intrinsic Capacitances

□ Excellent Switching Characteristics TO‐220F

□ Extended Safe Operating Area G‐Gate,D‐Drain,S‐Sourse
□ Unrivalled Gate Charge :Qg= 40nC (Typ.)

□ BVDSS=600V,ID=7.5A

□ RDS(on) :1.32 Ω (Max) @VG=10V

□ 100% Avalanche Tested

Absolute Maximum Ratings Tc=25℃ unless other wise noted

Symbol Parameter FQ F8 N60 Units

VDSS Drain-Sourse Voltage 600 V
Drain Current -continuous (Tc=25℃) 7.5* A
ID
-continuous (Tc=100℃) 4.7* A
VGS Gate-Sourse Voltage ±30 V
EAS Single Plused Avanche Energy (Note1) 420 mJ
IAR Avalanche Current (Note2) 7.5 A
PD Power Dissipation (Tc=25℃) 48 W
TJ,TSTG Operating and Storage Temperature Range -55 ~ +150 ℃
Maximum lead temperature for soldering
TL 300 ℃
purpose,1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max Units
RθJC Thermal Resistance,Junction to Case -- 2.6 ℃/W
RθJA Thermal Resistance,Junction to Ambient -- 62.5 ℃/W
* Drain current limited by maximum junction temperature.

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 HIGH VOLTAGE N-Channel MOSFET

Electrical Characteristics Tc=25℃ unless other wise noted

Symbol Parameter Test Condition Min. Typ. Max Units

Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V
△BVDSS/ Breakdown Voltage Temperature ID=250μA,Reference
-- 0.67 -- V/℃
△TJ Conficient to 25℃
Vds=600V, Vgs=0V -- -- 10 μA
IDSS Zero Gate Voltage Drain Current
Vds=480V, Tc=125℃ 100 μA
Gate-body leakage Current,
IGSSF Vgs=+30V, Vds=0V -- -- 100 nA
Forward
Gate-body leakage Current,
IGSSR Vgs=-30V, Vds=0V -- -- -100 nA
Reverse

On Characteristics
VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V
RDS(on) Static Drain-Sourse On-Resistance Id=3.7A,Vgs=10V -- -- 1.32 Ω

Dynamic Characteristics
Ciss Input Capacitance -- 1100 1430 pF
VDS=25V，VGS=0，
Coss Output Capacitance -- 135 175 pF
f=1.0MHz
Crss Reverse Transfer Capacitance -- 16 21 pF

Switching Characteristics
Td(on) Turn-On Delay Time -- 30 70 nS
Tr Turn-On Rise Time VDD=300V，ID=7A -- 80 170 nS
Td(off) Turn-Off Delay Time RG=25Ω (Note 3,4) -- 65 140 nS
Tf Turn-Off Fall Time -- 60 130 nS
Qg Total Gate Charge -- 29 38 nC
VDS=480,VGS=10V，
Qgs Gate-Sourse Charge -- 7 -- nC
ID=7A (Note 3,4)
Qgd Gate-Drain Charge 14.5 -- nC

Drain-Sourse Diode Characteristics and Maximum Ratings

IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- 7.5 A
ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 28 A
Drain-Sourse Diode Forward
VSD Id=7A -- -- 1.5 V
Voltage
trr Reverse Recovery Time IS=7A,VGS =0V -- 320 -- nS
Qrr Reverse Recovery Charge diF/dt=100A/μs (Note3) -- 2.4 -- μC
*Notes 1, L=15.7mH, IAS=7.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature

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 HIGH VOLTAGE N-Channel MOSFET

Typical Characteristics

VGS
Top : 15.0 V
10.0 V
1 8.0 V
10 7.0 V 10
1

6.5 V
6.0 V

ID, Drain Current [A]

5.5 V o
ID, Drain Current [A]

150 C
Bottom : 5.0 V

o
0
10 25 C
o
10
0 -55 C

※ Notes : ※ Notes :
10
-1
1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250µ s Pulse Test
-1
10
-1 0 1 2 4 6 8 10
10 10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3.5

1
10
3.0
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
2.5
RDS(ON) [Ω ],

2.0
0
10

1.5
VGS = 20V

※ Notes :
1.0
150℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µs Pulse Test

0.5 10
-1

0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1800 Crss = Cgd
10 VDS = 120V
1600
VGS, Gate-Source Voltage [V]

1400 Ciss VDS = 300V

8
Capacitance [pF]

1200 VDS = 480V

1000 Coss 6

800
4
600 ※ Notes ;
1. VGS = 0 V
Crss 2. f = 1 MHz
400
2
200 ※ Note : ID = 8A

0 0
-1 0 1 0 5 10 15 20 25 30
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 HIGH VOLTAGE N-Channel MOSFET

Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
0.5 1. VGS = 10 V
2. ID = 250 µA
2. ID = 4 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

8
2
Operation in This Area
10 is Limited by R DS(on)

10 µs
6
100 µs
ID, Drain Current [A]
ID, Drain Current [A]

1
10
1 ms
10 ms
100 ms 4
0 DC
10

2
-1
10 ※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
-2
25 50 75 100 125 150
0 1 2 3
10 10 10 10 TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]

Figure 9-2. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature

D = 0 .5
0
10
Zθ JC(t), Thermal Response

0 .2

0 .1
0 .0 5 ※ N o te s :
-1 1 . Z θ J C (t) = 2 .6 ℃ /W M a x .
10 2 . D u ty F a c to r, D = t 1 /t 2
0 .0 2 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 1
PDM
s in g le p u ls e
-2
t1
10 t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve

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 HIGH VOLTAGE N-Channel MOSFET

Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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 HIGH VOLTAGE N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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 HIGH VOLTAGE N-Channel MOSFET

Package Dimension
TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters