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ILQ1X

The document details the specifications and features of the IL*, ILD*, and ILQ* series of high-density phototransistor optically coupled isolators. It includes information on approvals, maximum ratings, electrical characteristics, and applications for these components. The isolators are designed for use in various systems, offering high current transfer ratios and isolation voltages.
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0% found this document useful (0 votes)
12 views3 pages

ILQ1X

The document details the specifications and features of the IL*, ILD*, and ILQ* series of high-density phototransistor optically coupled isolators. It includes information on approvals, maximum ratings, electrical characteristics, and applications for these components. The isolators are designed for use in various systems, offering high current transfer ratios and isolation voltages.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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IL1, IL2, IL5, IL74

ILD1, ILD2, ILD5, ILD74


ILQ1, ILQ2, ILQ5, ILQ74

HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS

APPROVALS IL1
2.54 Dimensions in mm
z UL recognised, File No. E91231 IL2
IL* Package Code " GG " IL5
ILD*/ILQ* Package Code " FF " IL74 1 6
7.0
6.0 2 5
3 4
'X' SPECIFICATIONAPPROVALS 1.2
Add 'X' after part number
z VDE 0884 in 3 available lead form : - 7.62 7.62
- STD 6.62 4.0
- G form 3.0
- SMD approved to CECC 00802 0.5 13°
Max
3.0
ILD1 0.26
DESCRIPTION ILD2 0.5 3.35
The IL*, ILD*, ILQ* series of optically coupled ILD5
isolators consist of infrared light emitting diodes ILD74 2.54
and NPN silicon photo transistors in space
efficient dual in line plastic packages. 1 8
7.0 2 7
FEATURES 6.0 3 6
z Options :- 4 5
1.2
10mm lead spread - add G after part no.
Surface mount - add SM after part no. 10.16 7.62
9.16 4.0
Tape&reel - add SMT&R after part no.
3.0
z Three package types
z High Current Transfer Ratio (50% min) 0.5 13°
z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) Max
3.0
z High BVCEO (70V min) 3.35 0.26
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 ILQ1 0.5
1 16
ILQ2
ILQ5 2 15
APPLICATIONS
z Computer terminals ILQ74 3 14
z Industrial systems controllers 2.54 4 13
z Measuring instruments 5 12
z Signal transmission between systems of
7.0 6 11
different potentials and impedances 6.0
7 10
OPTION SM OPTION G
SURFACE MOUNT 7.62 1.2 8 9
20.32 7.62
19.32 4.0
3.0
0.6 0.5 13°
0.1 1.25 0.26 Max
0.75
10.46 10.16 3.0 0.26
9.86 0.5 3.35

ISOCOM COMPONENTS 2004 LTD


Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581

17/7/08 DB91088
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)

Storage Temperature -40°C to + 125°C


Operating Temperature -25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current 50mA


Reverse Voltage 6V
Power Dissipation 70mW

OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5 70V
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74 50V
Emitter-collector Voltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 170mW


(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.65 V IF = 50mA


Reverse Current (IR) 10 μA VR = 4V

Output Collector-emitter Breakdown (BVCEO)


IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 70 V IC = 1mA , ( Note 2 )
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 50 V IC = 1mA , ( Note 2 )
Emitter-collector Breakdown (BVECO) 6 V IE = 100μA
Collector-emitter Dark Current (ICEO) 50 nA VCE = 10V

Coupled Current Transfer Ratio (CTR) (Note 2)


IL1, ILD1, ILQ1 20 300 % 10mA IF , 10V VCE
IL2, ILD2, ILQ2 100 500 % 10mA IF , 10V VCE
IL5, ILD5, ILQ5 50 400 % 10mA IF , 10V VCE
IL74, ILD74, ILQ74 12.5 % 16mA IF , 5V VCE
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1 75 % 10mA IF , 0.4V VCE
IL2, ILD2, ILQ2 170 % 10mA IF , 0.4V VCE
IL5, ILD5, ILQ5 100 % 10mA IF , 0.4V VCE
IL74, ILD74, ILQ74 12.5 % 16mA IF , 0.5V VCE
Collector-emitter Saturation Voltage,VCE (SAT) 0.4 V 16mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
Input to Output Isolation Voltage VISO 7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1)
Output Rise Time tr 2 μs IF = 10mA
Output Fall Time tf 2 μs VCC = 5V, RL = 75Ω

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

17/7/08
DB91088m-AAS/A7
Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio
vs. Ambient Temperature
200
Collector power dissipation PC (mW)

1.5

Relative current transfer ratio


IF = 10mA
150 VCE = 0.4V

1.0
100

0.5
50

0 0
-30 0 25 50 75 100 125 -30 0 25 50 75 100
Ambient temperature TA ( °C ) Ambient temperature TA ( °C )

Forward Current vs. Ambient Temperature Relative Current Transfer Ratio


vs. Forward Current
60
2.8
Relative current transfer ratio

50
Forward current IF (mA)

2.4
40
2.0

30 1.6

1.2
20
0.8
10 VCE = 0.4V
0.4 TA = 25°C
0 0
-30 0 25 50 75 100 125 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)

Relative Current Transfer Ratio Relative Current Transfer Ratio


vs. Ambient Temperature vs. Forward Current

1.5 1.4
Relative current transfer ratio

IF = 10mA
Relative current transfer ratio

VCE = 10V 1.2

1.0
1.0
0.8

0.6
0.5
0.4 VCE = 10V
TA = 25°C
0.2
0 0
-30 0 25 50 75 100 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)

17/7/08
DB91088m-AAS/A7

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