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2020-2 기말

The document outlines the final exam for a Microelectronic Circuits course, consisting of various problems related to bipolar junction transistors (BJTs) and MOSFETs. Topics include terminal voltage measurements, small signal models, collector current calculations, and configurations of BJT amplifiers. The exam tests understanding of transistor operation, biasing, and circuit analysis.

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tcl7g71
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24 views5 pages

2020-2 기말

The document outlines the final exam for a Microelectronic Circuits course, consisting of various problems related to bipolar junction transistors (BJTs) and MOSFETs. Topics include terminal voltage measurements, small signal models, collector current calculations, and configurations of BJT amplifiers. The exam tests understanding of transistor operation, biasing, and circuit analysis.

Uploaded by

tcl7g71
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Microelectronic Circuits I (Final exam)

EEE2013-41 Fall 2k20 Name: SKKU ID#:

1. (10 points) The terminal voltages of various npn BJTs are measured during operation in
their respective circuits with the following results: in this table, 0 indicates the
reference terminal to which the black(negative) probe of the voltmeter is connected. For
each cases, identify the mode of operation, and for case 8, can you observe collector
current? (Yes or No)

2. (10 points) A BJT is biased to operate in the active mode at a dc collector current of 1
mA. It has a current gain (β) of 100 and VA of 100V. give the small signal models:
gm , α , rπ , ro , re
3. (15 points) The collector current of a bipolar transistor operating in the forward-active
region may be modeled by

 V 
I C = I S e qVBE / kT 1 + CE 
 VA 
And the base current by
IS
IB = e qVBE / kT
βF

Find IC and VO in the Figure below given that VA=50V, βF =100, and VBE(on)=0.7V.
4. (15 points) The circuit below shows a particular configuration of BJT amplifiers known
as “emitter follower.” The bias arrangement is not shown. Calculate Rin and (vo/vi)

5. (10 points) The nMOS transistor in the source follower circuit has gm=10mA/V and large
ro . Find the open–circuit voltage gain and the output resistance Rout. Neglect body
effect, gmb
6. (15 points) the Q1 transistor has a current ID1 =100 μA. R=2kΩ, Assume that Q2 is
different from Q1 (L1=2μm and W1=4μm, L2=1μm and W2=6μm). Neglect the channel-
length modulation effect (i.e., assume that λ =0). Find the drain current (ID2) of the Q2
transistor
7. (10 points) If a still higher output resistance and correspondingly higher gain are
required, It is possible to add another level of cascading as illustrated in figure below.
For the case of identical transistors, what are the output resistance (RO3) and the
voltage gain ?

8. (15 points) The cascode transistor can be thought of as providing a “shield” for the input
transistor from the voltage variations at the output. To quantify this “shielding” property
of the cascoade, consider the situation in figure below. Here we have grounded the input
terminal (i.e., reduced vi to zero), applied a small change vx to the output node, and
denoted the voltage change that results at the drain of Q1 by vy. By what factor is vy
smaller than vx : Ratio (vy / vx)

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