DESIGN AND SIMULATION OF E-MODE GaN HEMTs FOR

PORTABLE POWER CONVERTERS IN ELECTRIC VECHICLES

Department of Electronics and Communication Engineering

Presented By
N. Sai Rohit (319126512100)
D. Tejaswini (320126512L10)
P. V V S S Bhagavan(319126512110)
B. Eswar Rao (319126512073) Under The Guidance Of
Dr. P. Murugapandiyan
Associate Professor,
Department of ECE,
ANITS.
Outline
 Abstract
 Motivation
 Introduction
 Methodology
 Software Tools
 Results
 Conclusion
 Future work
 Paper publication details
 References
Abstract
 Fossil fuels are used in internal combustion engines to power most automobiles now on the
road. However, due to their limited supply and emission of carbon dioxide, it is neither
ecologically benign nor sustainable.
 However, a widespread switch from internal combustion engine (ICE) vehicles to electric
vehicles (EVs) necessitates the growth of infrastructure facilities, such as charging stations
and vehicles that might have a more extended range.
 The transportation sector is moving towards electrification due to increasing fuel prices and
environmental concerns. EVs not only help us to replace fossil fuels but reduce global
warming due to greenhouse emissions. By 2028, the EV market is estimated to be $155
billion. We can also see big players like The Tatas and The Mahindras entering this market
early on.
 All this boils down to the efficiency of the EV, which depends on the electric energy storage
system (EESS), power converters, and motor drivers.
 Given the above, the main objective behind this project is to design and simulate
Enhancement mode p-GaN gate HEMTs for low-loss portable power converters in next-
generation electric vehicles.
Motivation ➢.

 GaN has the wide energy gap , the large critical field, and the high saturation velocity, thus
representing an excellent material for power electronics.
 The spontaneous and piezoelectric polarization-induced two-dimensional gas (2DEG) in the
channel of the III-Nitride hetero-structure causes minimal resistive loss due to low on-
resistance (RON).
 The GaN-HEMTs used as efficient power converters in power electronics industries
(portable charger, consumer electronics, electric vehicles, hybrid electric vehicles, motor
control, energy harvesting, and aircraft applications etc.).
 Next-generation power electronics demands smaller size transistors and better power
handling capability for efficient power conversion with reduced weight. Smaller conduction
loss and switching loss of the group III-nitride HEMTs power devices suitable for better
power conversion efficiency.
Introduction
Material Properties Si GaAs SiC GaN Diamond
Band gap 𝐸𝑔(𝑒𝑉) 1.1 1.4 3.3 3.4 5.5

Permittivity 𝜀𝑟 11.8 13.1 10 9.0 5.5

Electron mobility 𝜇𝑛(𝑐𝑚2𝑉−1𝑠−1) 1350 8500 700 1200 1900
Saturation velocity 𝑣𝑠𝑎𝑡(107𝑐𝑚/𝑠) 1.0 1.0 2.0 2.5 2.7
Critical electric field 𝐸𝑐𝑟(𝑀𝑉/𝑐𝑚) 0.3 0.4 3.0 3.3 5.6
Thermal conductivity 𝜃 (𝑊𝐾−1𝑚−1) 150 43 330 130 2000
JFoM/JFoMSi 1.0 1.3 20.0 27.5 50.4
BFoM/BFoMSi 1.0 14.4 11.9 20.0 82.0

Above Table lists the essential electrical characteristics of every semiconductor material.
Compared to all other types of material, including Si & GaAs, GaN has the largest electric
breakdown field. Moreover, these GaN-based electron transistors are good choices for high-
power uses because of their highest saturation velocity and improved mobility.
5
Introduction (Continued)

Figure.1 Application of GaN-HEMT in Electrified Vehicle

Source : https://ieeexplore.ieee.org/document/9063442
Introduction (continued)
Road map of Power GaN HEMT

Source : https://rb.gy/odp9h
Methodology
 In this project, we design p-GaN power devices with different back barrier.
We will be proposing two devices and for each device will be comparing the
same device with a GaN Buffer back barrier to that with a β-Ga2O3 as the
back barrier.
 We will then simulate the electrical characteristics of these devices by using
the technology computer-aided design (TCAD) Silvaco software to examine
various characteristics of a device with the above mentioned two different
back barrier.
 Before that we will understand what a High Electron Mobility Transistor
(HEMT) is and few crucial device parameters.
Methodology
What is HEMT?
 HEMT’s take advantage of 2DEG which is created at the AlGaN/GaN heterojunction.
 The 2DEG is confined at the heterojunction and free to move parallel to the channel.
 This results in a higher electron mobility which is good for large gain and high frequency
characteristics.
 The basic concept in a HEMT is the aligning of a wide and narrow band gap material
 2DEG with a sheet charge density on the order of 𝒏𝒔 ~ 𝟏𝟎𝟏𝟑 𝒄𝒎−𝟐 .This is a factor of five times larger
than AlGaAs/GaAs

Source : https://rb.gy/17sa4

Basic AlGaN/GaN HEMT structure

Methodology
Device Parameters
 Drain Current – Higher Saturation current means a higher power rating for the devices which is
always preferrable for high power application
 Gate Switching delay (𝝉 = 𝑹𝑶𝑵 ∗ 𝑪𝑮 ) – Having a lower gate switching delay results in higher
frequency of operation enabling smaller size devices.
 Parasitic capacitances – Lower parasitic capacitances helps in realizing a more robust power
converter
𝑽𝑫𝑺
 ON Resistance (𝑹𝑶𝑵 = 𝑰𝑫𝑺
) - Power semiconductor transistors exhibit ON-state resistance (RON)
during active mode. To save most energy, the device must have a very
low ON-state resistance.
 Breakdown Voltage – The off-state breakdown voltage of the device determines how much voltage
can be put across the power semiconductors (VBR). To cut down on switching
losses the device must have a high off-state breakdown voltage (VBR).
𝝏𝑰𝒅
 Transconductance (gm = | ) - A higher transconductance suggests that the device may be
𝝏𝑽𝒈𝒅 𝑽𝒅𝒔
utilized to provide stronger gain with all the parameters being
unchanged and better switching frequency
Software Used
 Silvaco TCAD (Ltd Edition Trail Version)
Results
A Normally off GaN HEMT with p-type GaN gate

Device Structure
VI Characteristics

Transfer Characteristics
Transconductance(gm)

Drain Leakage Current

CGS

CGD
Breakdown Voltage

Gate Switching Delay

A Normally-off GaN Metal Insulator Semiconductor
Field Effect Transistor (MISFET)

Device Structure
VI Characteristics

Transfer Characteristics
Transconductance(gm)

Drain Leakage Current

CGS

CGD
Breakdown Voltage

Gate Switching Delay

Results - Comparison Table
Name of ref. paper Lg Lgd Lgs gm(mS/mm) Im(mA/mm) Vbr
Chun-Hsun Lee et al. (2018) 3µm 6µm 2.5µm 10.00 110 ….
Ching-Ting Lee et al. (2015) 1 μm …. …. 115.30 500 …..
Isabella Rossetto et al. (2016) 1.3 μm 15 μm 1 μm …. 350 ….
Jie Liu et al.(2007) 1 μm 1 μm 1 μm 150.00 210 ....
Liang-Yu Su et al. (2014) 4 μm 16 μm 2μm …. 60 1630V
Masataka Higashiwaki et al.(2007) 100-180 nm …. …. 400.00 800 ....
Shin-Yi Ho et al. (2017) 3μm 6μm 2μm 26.00 60 ….
Shu Yang et al. (2013) 2 μm 5 μm …. 180.00 350 450V
Hao Wu et al. (2021) 1.5 μm 1-7μm 1.5 μm .... 225 900V
Yong Cai et al. (2006) 1 μm 2μm 1μm 0.15 450 ….
Huaxing Jiang et al. (2018) 1.5 μm 3 μm 3 μm 130mS 550 ....
Takuma Iwamoto et al. (2021) 0.3 μm 1.5 μm 0.5 μm .... 500 400v
Ling Yang et al. (2018) 0.2 μm 2.2μm 1.6 μm 412 mS 845 183V
Jiejie Zhu et al. (2017) 1 to 9μm 3 μm 3 μm 91mS 330 ....
Haijun Guo et al. (2017) 1.4 μm 6μm 1 μm …. 430 ....
Yueh Chin Lin et al. (2017) 2 um 15 um 3 um 165 mS 648 ....
Shuxun Lin et al. (2016) 2 μm 3 μm 1.5 μm .... 630 ....
Shuxun Lin et al. (2016) 2 μm 3 μm 1.5 μm .... 630 ....
Cheng Liu et al. (2015) 1.5 μm 15 μm .... 112 mS 730 703V
This Work p-GaN Gate with GaN Buffer 0.8μm 5μm 1μm 280 340 700V
This Work p-GaN Gate with β-Ga2O3 0.8μm 5μm 1μm 510 490 800V
This Work Al2O3 Gate with GaN Buffer 0.8μm 5.1μm 1.1μm 523 832 1410V
This Work Al2O3 Gate with β-Ga2O3 0.8μm 5.1μm 1.1μm 525 877 1610V
Conclusion
The Device having β-Ga2O3 as the back gate instead of using a simple GaN Buffer yielded better results
for both the Normally off p-GaN gate device and the Normally off GaN MISHEMT. The project
successfully implemented the execution of two devices in which each device a comparison of an existing
device with GaN as back gate is done with the same device having β-Ga2O3 as the back gate. All the
parameters which were considered for comparison yielded better results for the proposed device having β-
Ga2O3 as the back gate. The most crucial parameter which we aimed to improve is the breakdown voltage
and it was successfully implemented. The higher breakdown voltage helps us to use our proposed device
at higher input voltages without affecting/destroying the device. Also, higher voltages allow more power
to be transferred with less loss over the same diameter (and mass) of copper cable. Apart from this, higher
voltages also help in reducing the charging time, create lower current which reduces heat, allows us to
have thinner and less cumbersome cables, and reduce the size of other electric components. Other
parameters like the drain leakage current, transconductance, gate switching delay also improved which
helps in lesser power consumption, operating the device at higher frequencies and give higher output
power which is used to drive the batteries in an Electric Vehicle.
Future Work
The ability of GaN systems to replace the Si for switching applications is a crucial area of research in the field of Device Physics. There are several
future scope and improvements that can be considered in the field of GaN systems. Some of them are:

1) Although major progress has been achieved in recent years for the use of GaN systems in Electric Vehicles, the growth process is continuous
research. Steady improvement has been achieved in increasing the breakdown hence the operating voltage, maximizing operating frequency,
and decreasing the power loss. But many global automobile companies are investing a lot in Research and Development of the GaN systems in
Electric Vehicles.
2) Currently all the Electric Cars are operating at 400V while the research is being conducted to have an 800V operating voltage. This will half
the charging time, reduce the size of battery, and greatly improve the mileage of the car.
3) With current GaN devices the power handling capabilities are limited. However, in the future with 1200 V GaN devices, the application can be
extended to cover higher power and higher frequencies than IGBTs, Si MOSFETs and SiC devices.
4) The efficiency of an EV is also dependent on the efficiency of its power electronic motor drive. When looking at the motor drive, both the
inverter and motor are considered. Improving the efficiency of the motor drive reduces cost and thermal requirements making future EVs
highly competitive against ICE vehicles.
5) Although we were able to improve the breakdown voltage and saturation current for V-I characteristics for the second device, remaining
parameters remained almost the same for both the back gates which can be improved.
The model improvements and future work listed above is to serve as motivation for future research in this area. GaN systems offer various
advantages over the traditional Si based systems which made it a great alternative especially in the field of EV where better breakdown voltages,
lower power and higher operating frequencies are crucial. Future research will be exploring the applications of GaN systems completely and
making great use of it in various fields not just limited to Electric Vehicles.
Paper Publication Details
 Submitted the paper on ‘Design and analysis of
Enhancement mode GaN-HEMT for power switching
applications’ to 8th International Conference on
Communication and Electronics Systems (ICCES 2023)
conducted between 1st-3rd June 2023 in Coimbatore, India.
 References
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pp. 70553-70571, 2020, doi: 10.1109/ACCESS.2020.2986972.

[2] E. A. Jones, F. F. Wang and D. Costinett, "Review of Commercial GaN Power

Devices and GaN-Based Converter Design Challenges," in IEEE Journal of Emerging
and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 707-719, Sept. 2016, doi:
10.1109/JESTPE.2016.2582685.

[3] J. T. Asubar, S. Kawabata, H. Tokuda, A. Yamamoto and M. Kuzuhara,

"Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax
Using Recessed-Structure With Regrown AlGaN Barrier," in IEEE Electron Device
Letters, vol. 41, no. 5, pp. 693-696, May 2020, doi: 10.1109/LED.2020.2985091.

[4] Mei Ge et.a;. “An improved design for e-mode AlGaN/GaN HEMT with gate stack
β-Ga2O3/p-GaN structure” Journal of Applied Physics 130, 035301 (2021);
https://doi.org/10.1063/5.0049662

[5] M. Xiao, X. Duan, J. Zhang and Y. Hao, "Enhancement-Mode AlN/GaN HEMTs

With High Ion/Ioff and Low-Leakage-Current Fabricated With Low-Power Surface
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