Course: Introduction to VLSI design (19EEC334)
Unit-III: BiCMOS Fabrication process
Y.V.Appa Rao
Assistant Professor
Department of EECE.
GITAM Institute of Technology (GIT)
Visakhapatnam – 530045
Email: vyempada@gitam.edu
NPN-BJT
C B E
N-Plus
Emitter
P+ p+
P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
BICMOS STRUCTURE
NMOS PMOS NPN-BJT
S G D S G D C B E
N-Diff N-Diff P-Diff P-Diff N-Plus
Emitter
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
P-SUBSTRATE IS TAKEN
P-SUBSTRATE
P-TYPE SUBSTRATE IS COVERED WITH OXIDE LAYER
P-SUBSTRATE
A WINDOW IS OPENED THROUGH OXIDE LAYER
P-SUBSTRATE
THROUGH THE WINDOW N TYPE IMPURITIES IS HEAVILY DOPED
N Plus Buried Layer
P-SUBSTRATE
P-EPITAXY LAYER IS GROWN ON THE ENTIRE SURFACE
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH OXIDE LAYER AND TWO WINDOWS
ARE OPENED THROUGH THE OXIDE LAYER
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THROUGH THE TWO WINDOWS N-TYPE IMPURITIES ARE DIFFUSED TO
FORM N-WELLS
N-Well
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THREE WINDOWS ARE OPENED THROUGH THE OXIDE LAYER , IN THESE
THREE WINDOWS THREE ACTIVE DEVICES NMOS,PMOS AND NPN BJT
ARE FORMED
N-Well
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH THINOX AND POLYSILICON
AND ARE PATTERNED TO FORM THE GATE TERMINALS OF THE NMOS
AND PMOS
N-Well
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THROUGH THE 3RD WINDOW THE P-IMPURITIES ARE MODERATELY
DOPED TO FORM THE BASE TERMINAL OF BJT
N-WELL ACTS LIKE THE COLLECTOR TERMINAL
N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE N-TYPE IMPURITES ARE HEAVILY DOPED TO FORM
1.SOURCE AND DRAIN REGION OF NMOS
2.EMITTER TERMINAL OF BJT
3.AND INTO NWELL COLLECTOR REGION FOR CONTACT PURPOSE
N-Diff N-Diff N-Plus
Emitter
N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE P-TYPE IMPURITES ARE HEAVILY DOPED TO FORM
1.SOURCE AND DRAIN REGION OF PMOS
2.AND INTO P-BASE REGION FOR CONTACT PURPOSE
N-Diff N-Diff P-Diff P-Diff N-Plus
Emitter
N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH THICK OXIDE LAYER
N-Diff N-Diff P-Diff P-Diff N-Plus
Emitter
N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
THE ENTIRE SURFACE IS COVERED WITH THICK OXIDE LAYER AND IS
PATTERNED FOR CONTACT CUTS
N-Diff N-Diff P-Diff P-Diff N-Plus
Emitter
N-Well P-Base
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
METAL CONTACTS ARE FORMED
NMOS PMOS NPN-BJT
S G D S G D C B E
N-Diff N-Diff P-Diff P-Diff N-Plus
Emitter
N-Well (Collector)
P-EPITAXY
N Plus Buried Layer
P-SUBSTRATE
