UNISONIC TECHNOLOGIES CO.

, LTD
1N60A Power MOSFET

0.5 Amps, 600 Volts

N-CHANNEL MOSFET

DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
1
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche TO-92
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =11Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC) *Pb-free plating product number: 1N60AL
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
1N60A-T92-B 1N60AL-T92-B TO-92 G D S Tape Box
1N60A-T92-K 1N60AL-T92-K TO-92 G D S Bulk
1N60A-T92-R 1N60AL-T92-R TO-92 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

1N60AL-T92-B
(1)Packing Type (1) B: Tape Box, K: Bulk, R: Tape Reel

(2)Package Type (2) T92: TO-92

(3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn

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1N60A Power MOSFET

ABSOLUTE MAXIMUM RATINGS(TC = 25 , unless otherwise specified.)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
TC = 25 0.5
Continuous Drain Current ID A
TC = 100 0.4
Drain Current-Pulsed (Note 2) IDP 2 A
Repetitive(Note 1) EAR 3.6 4.0 mJ
Avalanche Energy
Single Pulse(Note 2) EAS 50 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TC=25 3 W
Total Power Dissipation PD
Derate above 25°C 25 mW/
Operation Junction Temperature TJ -55 ~ +150
Storage Temperature TSTG -55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Thermal Resistance Junction-Ambient θJA 120
/W
Thermal Resistance Case-Sink θCS 0.5

ELECTRICAL CHARACTERISTICS (TJ =25 , Unless Otherwise Specified.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 V
Breakdown Voltage Temperature BVDSS/
ID = 250µA, referenced to 25 0.4 V/
Coefficient TJ
VDS = 600V, VGS = 0V
Zero Gate Voltage Drain Current IDSS 1 µA
VDS = 480V, TC = 125
Forward VGS = 20V, VDS = 0V 10 µA
Gate-Body Leakage Current IGSS
Reverse VGS = -20V, VDS = 0V -10 µA
On Characteristics
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 0.5A 11 15 Ω
Dynamic Characteristics
Input Capacitance CISS 100 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 20 pF
Reverse Transfer Capacitance CRSS 3 pF
Switching Characteristics
Turn-On Delay Time tD (ON) 12 34 ns
Rise Time tR VDD=300V, ID=0.5A, RG=5Ω 11 32 ns
Turn-Off Delay Time tD (OFF) (Note 4,5) 40 90 ns
Fall Time tF 18 46 ns
Total Gate Charge QG 8 10 nC
VDS=480V, VGS=10V, ID=0.8A
Gate-Source Charge QGS 1.8 nC
(Note 4,5)
Gate-Drain Charge QGD 4.0 nC

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1N60A Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage VSD VGS=0V, IS = 0.8A, 1.6 V
Continuous Drain-Source Current ISD 1.2 A
Pulsed Drain-Source Current ISM 4.8 A
Reverse Recovery Time tRR VGS=0V, IS = 0.8A 136 ns
Reverse Recovery Charge QRR di/dt = 100A/µs 0.3 µC
Note: 1. Repeativity rating: pulse width limited by junction temperature
2. L=92mH, IAS=1.0A, VDD=50V, RG=0Ω, Starting TJ=25
3. ISD≤1.0A, di/dt≤100A/µs, VDD≤BVDSS, Starting TJ=25
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.

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1N60A Power MOSFET
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

-
+

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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1N60A Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V D.U.T. t D(ON ) tD (OFF)
Pulse Width ≤ 1 s tR tF
Duty Factor ≤0.1%

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50k as D.U.T.
QG
12V 10V
0.2 F 0.3 F
VDS
QGS QGD
VGS

DUT
VG
1mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS

RG
VDD

10V D.U.T.
tp IAS
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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1N60A Power MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS

Output Characteristics Transfer Characteristics

V GS
Top:
15.0V VDS=50V
10 .0V 250 s Pulse Test
8 .0V
Drain Current, I D (A)

0
10 7 .0V

Drain Current, ID (A)

6 .0V
5.5V
4.5V
5V
Bottorm :4.5V 10 0
150

25

250 s Pulse Test

10 -1
TC=25
10-1
100 101 2 4 6 8 10

Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

On-Resistance vs. Drain Current Source- Drain Diode Forward Voltage

)

30
TJ=25 VGS =0V
Drain-Source On-Resistance, R DS(ON) (

Reverse Drain Current, I DR (A)

250 s Pulse Test

25
VGS=10V
20
VGS=20V 10
0

15

10 25
150
5

-1
0 10
0.0 0.5 1.0 1.5 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain Current, I D (A) Source-Drain Voltage, VSD (V)

Capacitance vs. Drain-Source Voltage Gate Charge vs. Gate-Source Voltage

200 CISS=CGS +CGD 12

VDS=480V
Gate-Source Voltage, VGS (V)

(CDS=shorted)
CISS COSS=CDS+CGD 10 VDS=300V
150 CRSS=CGD
Capacitance (pF)

VDS=120V
8
COSS
100 6

4
50 CRSS
VGS=0V 2
f = 1MHz I D=1.0A
0 0
10-1 10 0
10 1
0 2 4 6 8 10

Drain-SourceVoltage, VDS (V) Total Gate Charge, Q G (nC)

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1N60A Power MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)

Breakdown Voltage vs. Temperature On-Resistance vs. Temperature

1. 3.
VGS=0V VGS=10V
Drain-Source Breakdown Voltage,

Drain-Source On-Resistance,
2 ID=0.5A
I D=250 A
2.

RDS(ON) (Normalized)
1. 5
BVDSS, (Normalized)

1 2.
0
1. 1.
0 5
1.
0. 0
9 0.
5
0. 0.
8 -100 -50 0 50 100 150 200 0 -100 -50 0 50 100 150 200

Junction Temperature, TJ ( ) Junction Temperature, TJ ( )

Max. Safe Operating Area Max. Drain Current vs. Case Temperature

1.0
Operation in This
1
10 Area is Limited by
RDS(on)
Drain Current, ID (A)
Drain Current, ID (A)

100 s
1m
100 s
10ms
0.5

10 -
1 Tc=25
TJ=150
- Single Pulse
10 0.
0 1 3
2
10 10 102 10 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC ( )

Thermal Response
(t)

0.5
JC

100
0.2 JC (t) = 3.45 /W Max.
Thermal Response,

Duty Factor, D=t1/t2

0.1 5 TJM-TC=PDM× JC (t)
0.0
2
0.0
10-1
0 .0 1
Single pulse

10-5 10 -4 10-3 10-2 10-1 100 101

Square Wave Pulse Duration, t1 (sec)

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1N60A Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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