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Engineering Notes

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0% found this document useful (0 votes)
20 views13 pages

Engineering Notes

Notes

Uploaded by

raaana599
Copyright
© © All Rights Reserved
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lupere, R= serfes resistance L=sesfes capachtance = Shunt Conductance C=shunt capactance = length of lfne. let us assume stnosefdal ve tiatfor Vevee d= veo Pt —® Vsiimflarly T=ra@ai= Tee ——@ The change % the voltage wah respect to AE v= Ride saa at a= ot [eat] ~ aoe oe Ma teh ~© ov ae eae OE Ot = &vAt + cee at X= at [eve cov i 2) = @v+cov ew+ea —® Apply at=0 aa DY sav Be Ge stro Ob e At on. dteferensfattng ea? G w-rso E d[e)\= f ata) SAN * SS =o? =D Pry vee a ov cra me ae coh ae wv ere aaa ete 5 Sub % ea" © Sy =e eeegy ag 1S (acs | ov = ROY Pca + LY oY o +clg re | 2Y = pays a aes Re W (ectia) +c Soe xy vest a = Re » [Rc 4) ce let us Yedonate the voltage and cawent Veveet) = vce) &&* —© revs 21a oe —@ Aeferensfier oqo @ taser wv do & V= vce) efor 2, OV LK OV = duce) - Wot —@ . ote Aieferentiare ear@ tates OF ada wee NH ye dP —O oe av = vz) e@* Cpu) oe where PSA oN = ave) set co —O9 eq® @ <0 +@ Fn ea © VR Swot oe = PAVE (REF Te) V (a) PME tevez) eFwt ew) —@ ofvie) Soot ior oe te [oes Cec +1e) vez) $+ teved eo) —@ eva) — & ~ ee [Pers [ecatejfw vig]+ LCV) € ot a eu) = eves) + (ec steiiu Vb) + Lc vew Cwn)9] 2 soe) =[Rew + [pcr Ltifiw tLe Con)*] VOB, ve), o> ae = (RrJov* Casio] yale, = Rado Foe Casieoc) | ve) -@Q ZHprotl M=eaaioc Pe ae ceyv@) —© Ove) _ — [ a= = EYVa\=0 Pe) _ ase : yee HIM =0 | 02) v@e v, et 41 Et —@ T@=r, et 4r_ ere - OD Va vaTerD- - -— Won ston Y= w4ip evs pry idl ot Ot Veveele wrt B= dvCt) Sot _- 4 Tae e% wrt 9E ya) d (e+) ot at OL = rea) et Of en C Pee) ave) Or Fut arc) 4 rr@Me* Fw of @_ ree) PM (Rt Fou ge 7 eet NEL ee x9 2 , Wrath neat Afagram Eocpiafn ine + pave SYSteM pPcat Mica Microwave source J Novemerer isle fours’ LI I | ./\ . tonsmPtitag , hn mtennc Caitbratec! en aaenna Hav eguraes stand STA Microwave system cera? consists of a tans -mPster Subsystem eobich Tnciudes © Microwave Oscfliator @woveguide © tronsmtiifng antenna SSA Micyoklave SyS#em consisis of a veceiver Subsystem which Includes ad © neceing antenna. © tHansmfsston tine 6 cuaveguide © Macwowave ampireey @ vecdver XID order 4o design a microsrstem and conduc O Proper test OP ft.an qdequate Knowledge Of Components avowed fh essenttar devPces » the text ¥ Restle microwave ompitees 4here fore. clesctibes rifcroNsve Components , Such as vesonators caries 5 Hteros#Pip the, hybtids » micmmave Entesrated cate 03) > ~ 0% ist the characyeysifes of SmPth chara? Ane constant 2%" FIM sFamFifey fm the chat constant ‘8 and of orthogonal circle # 4he Constant fn and Ae CoNStant cx? cfgcle aU Pass thug she point (a2 , fe=0] e-the eThe Upper half of athe Afoarom represents the Safe, . The lower hare of *he Mlogvom Teprwesends ‘he ‘~ eat a potnt of Emin ='I8. stheye 8S 8 Umin on Vg | % a Vox DMtiz| e AL A point of tmax =S. hese °. ethe APstonce ayvund the SmwsO chart ts one hel? wave tengt> (4/3) eshe honteprtal Todfus + the Tight of “the chant | Cemier Correspons AO Vaile Tmgag Emax $F Tis hotfoma) Tadfus #0 the lefk of the charst center correspons 40 Yin. Tmax emin ¢ V5 d Impedance of Ps Tepeated For every Ye toave length d?stance en to Wavelength towordy eThe norm ethe AfStance ase Fav! the generator & sIsp Aowards she load A certain termissron \fne has a Character sits Impedance of 45A8001% ond §s teamfnate cl fr a load fnpedence of FO+Pso.n. Compete Mnoplecitor CO-efFKeFen se @ imangmesstoa_co-etticiens + Oxefieetfon co-efffefent ¢_ C= eb, tte ELe $049s0. o= 54 Pool, "Ties sot} - C35 focus FRot F509} 4 [4s4foo.n] T= -5+fa9.99 5435001 sE T= 50+84/95-1° 153-3) [19.03 = 0233/4668" = 0-08 +70+3e. (B-transnfssfon co- efficent ¢— T=4)- 2h ELt zo T= 2[40 +5500) Tovisoas GE yoo. T= (14049100) Qus+3so-o1) Vs Vie.04/ 35-54 \s3-34 [lg.03 + SLD Oxu Pq poyussardar f 'Oupuuss——~ + Enkus wus Kldtes =4q G@ . ux 4. 7 + G § HOUSt——.eoftg ¢ BOSTS+IUlEs 0g £ ays od ve TWOUdIEE — ~ + EDEIS LEDMS + 1Dlls = Tq fo parmdxs aso sgarautosod-g jo uo- FFNbs GOyAIUMY Sromanyr (u) FrodHINK| O LOL BLooneste TdF 103 UorpoFuasadan xyeroi-s out BFS «ro —— “30— asimpow BEe-Oss biso-o = J s@BET €h-6-0 Cte 2Ox62S"1) (EFS 0¢-05) “ (earrsnet $4 corxs-oJ]) (s<-osg+ &] zre-Oy(polx ue) O (¢21xS-0] fig xg) (co1xve) cegf = 21 Qmphyameay Az\ =4 (J) ¥Uv¥sv0 Ugobvdawd@ lars-aege onset! =o% Ot], Oxbes-) SOT = 2 STD ay RUNG aaomecryrr Feod & AF ee = Ss mutiplied conan SS erm of ar other Vor Keeney coUMD ys ‘ a @phase sips POPES ; A change 90 spectfitd locaton +eTMIpar planes of OD artpsrary dunctfon eft) offeca wy pase oF sthe scatieying co-efficient a of ane function S'=QSp wonere » G= (Qu O--- 0 © % ----0 0 9 ---- bon -38 Le by, = base Gor | E \e=19,3,4-—9 haw fe Magis tee 2 Resive the Sas Scatter? =-ng mMartio. magic ee f8 0 combination of = -plane § H-plone %s called Magic tee. Magic tee % aiso called as hrbiid-+ee, (SJey= for 5 Siz. Sty Sa, Sea S33 Say —& Sai Sar $33 Say Su $42 gu3 suq axe because of H plane Sse=Sia) ——{2) bee of & Plane Suss-Sq) ——@ Say =Sua=0 —@ 4 5aa=Squ=0 Consider Symsnepyy, Property Ud= sees sip _ © CsJ= Psy ga sis Sq Sart Sar g\3 -¢ay 83 83 6 oO Sy -sy oo San =513 Syax-s = Sia Sgy =-Sq) saa=O S3N=0 Say=Sia\Sse= Sia Suess ean Sus=o untiy proper ts onfay _propes 4 cs}fstj = LY. desis = Ce) 4 cat Sit su \su\te\soa\* su Sin Si SY Vf Sut SP ae L og a< -®@ Sia Soe S8 ~S4 || Sst seat at tf > ]O loo Sy San A oo ||saf SB Oo 0 © 0l6 \su\ty\saals baba si 88 i. 8 x33 sy “Sig oO Sat -sig OP oa \sulhyisiat*.0 \Swte belts ([Sa2lz \eultsisia}24 tls sis) -—®© s =o \siol+ \sasl* aS FSS e=] 0 0 We Wa ® 2 ° Wve ve] \sut sisal Foto =1 — @ Vue w 9 0 € - in =. -¢ Moe 0 Usigl® 4Sigl® 40 4051 3, If. 0 fom ea”) b]=[s jae asa = {s\fa] \ e by 00 Wa We) pa ara =L pif /9 0 WA “Wo a. aye bs 20 a s a by Vea % pe se © Gfasrau] 3-2 _ Pa] ba= ¥ (os-on) gmm ea -8 b= Le Causay) \Sql*4 ISi¢ (22 men alsiqhs! \Sigt=Ne, ZAZA | =a = ee a pnects® es ie. > vayfable etenuaiey CORS| Fo pece of ceular. Waveguide and -- circulay so rectanguiay +ransmifssfon ~~ a The cenxer resistance + gotated by 36 cirewiay seston Con raing the -catd Rp can be Pnrectsel 6° Gwdd wo Hoted VESistance ¥ — faom figure ©) k a = the attenuadtren (%) fSs-given by a> £ Esto 6 oy giscuss baferiy micro-strip ifres one at fs derive the expresston for Quartiy’ pacton losses and ato 7? MicrostfpiPne has very Simple Jeomety Microserfpiine. Lb Consists, 08a thin conductor ond a gqrodnd plane loos loss dfetecttic Matestar. Separated .by /O. a Microstrip Wee is an 4ethe Upper ground plane hence Pt %$ catied’ as Pen Str Ihe. Shoon I the -fqure .. i conductor stulP unsymmetrical ‘Sirfp fine. fs Not present to Mfcrostip, Cross section qaound plane EMicrostrip ele construct the foowih9 _comparai® advantages ¢~ @Benes Prterconnectfon featwWes bce pavvldes Sree accessible Surface on whch solPol store Aevices can Plane. easier fabiicatfon; the entire patemn Can be clepostred on sPagie cifelectr?c supsrrate . ¥ microstrip tine cfrcutas are fabricated using pring “ed cfrcuft @fagrena . tec hnitpues gub ed %0 0G y Te Consists Of three Afelechfc materiat aie @aturfna oa= 338 @auartee QjA Er 1008 A @duroFd - ‘ 4 Ei freA 2 byicate my =, Hrohen. semfconductor devices fe. 40.08 oo Li Od = Ee Ag ——@ ® fea. ON Microstrip fe Sdructuye, Sita *S ofden used Afelectrica. wer tand site (Ee=""*) : 4 Gs Eve -) = Se. —— 5 a, ey -L tr Q-factor of Microstrf = sub eqn @ fn €9,°@) ¥@ foctor (guaiziy ) OF O microstrip Ps very ign. Gated: the value of Gof Microsi’p Ps. Ifmfted by. i ; tane ae he yadtatfin tosses Of the Substrate 4 dierectait = 46 tonstant Vere tang E Sg = tang The §- Factor of a mfcrosifp fs siven by Qq= 0-63hTeF_ oa AFstuss bafefiy parauel Microstrip Wfnes ? rauel siv%p ine cons?s* of 2 perfectiy parallel where $= h =AtStance bila qwund plane 4 M¥crostrip => ¥ pal sirfps made Of Copper. x Pee paraliel stp ifne 15 fhe © = conductivy of Afelectrfe The stance biew the nov?ng Unt form +nPceness. fa Operating frequency eth dfeiech® Materfol 8s w. 4 thickness of the Qd= 243 aig Bldg The wi plore. extdtn jomelec, Material Ps di ¢ has Aieieciec The Bielectiic ctenuart aon. 0: eh er constant per wove conte “ob ent, XA= 243.46 tano Ere dg * Afswbuted parameters WEEN ag IN a microwave Integrated chreuPe a Sanfp \fne can be eastly babrfcoted on difele cigte SUb Strate by usfng pifoted circutt technPques &= edu \ a = to : | ae eke Se % chovocteist& Tm pedovige yp e~ Charactensi? Impedance of a lossless porate) Strfpiine Ps given by a [Ee d/Boue sit w-lE~ ear (ala The phase Vvelochty oF TEM Wave PovPagatioy thud) +he paratiel strfp line Ps oe \_ st 2 Cas B uc V Uo be Sotyg Vera St. losses. — otPon constant fy pielectric tosses 4% Attend avon qahe arrents The conductor$ =3}5% =r Pag P238\ (dn [« \ pia al 5 A Jo} al t- pa Caldn

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