Main editor: Bendib Toufik.
4th year µElec
Group: kebi salah eddine lakhdar ala eddine
Practical work 3: PSPICE Simulation of MOSFET
circuits
I- Static simulation:
1- Create the Pspice model for this MOSFET using .model statement:
2- Create the appropriate simulation profile that evaluates the operating point
and the small signal parameters and Fill the following table using the output
file:
.LIB
R1 3 4 1K
R2 3 2 100k
R3 2 0 2K
R4 5 0 1k
RLO 6 0 10k Lambda VGS VDS VTH VDSAT IDSAT gm gds W/L
[V-1] [V] [V] [V] [V] [mA] [mS] [mS]
C1 4 6 1u
C2 1 2 4.7u 0 3.2 6. 2 1. 4.30 7.19 0 3
C4 5 0 1u 4 2
vcc 3 0 DC 15
v 1 0 sin( 0 10m 1k)
VDS 4 5 DC 6.4
VGS 2 5 DC 3.2
Mn 4 2 5 0 M1y
.model M1y NMOS L=100u w=600u vto=2 kp=2m lambda=0
.op
.DC VDS 0 15 0.1 vgs list 1 3.2 4
.probe
.en
3- Change the transistor geometry and the bias voltage VCC in order to adjust
the operating point to a current IDSAT equal to 8.6mA while VDSat remains
constant.
We find that: W/L=6 so: W=600u and L=100u
And: Vcc= 23.6
.LIB
R4 0 1 1k
R3 0 3 100k
C4 0 1 1u
Vsin 2 0 SIN(0 10m 1k) AC 10m 1k
Vcc 6 0 23.6
C2 2 3 4.7u
R2 3 6 100k
R1 6 5 1k
C1 5 7 1u
Rload 7 0 10k
.model MI NMOS (KP=2m Vto=2 LAMBDA=0 W=600u L=100u)
M1 5 3 1 1 M1
.op
.end
4- Set Vcc=15V and W/L= 3 and Plot the characteristic IDS vs. VDS using the
.DC analysis command and Label its regions of operation (linear, triode and
saturation).
.LIB
R4 0 1 1k
R3 0 3 100k
C4 0 1 1u
Vsin 2 0 SIN(0 10m 1k) AC 10m 1k
Vcc 6 0 23.6
C2 2 3 4.7u
R2 3 6 100k
R1 6 5 1k
C1 5 7 1u
Rload 7 0 10k
.model MI NMOS (KP=2m Vto=2 LAMBDA=0 W=600u L=100u)
M1 5 3 1 1 M1
Vgs 3 1 3.2
.DC Vcc 0 15 1
.probe
.op
.end
Regions of operation:
Linear: 0<Vds<0.3
Triode: 0.3<Vds<1.4
Saturation:
1.4<Vds<6.4
Graph interpretation :
The graphical representation of Id (drain current) vs. VDS (drain-source voltage) at a
constant VGS (gate-source voltage) for an NMOS (n-type MOS) transistor typically reveals
three distinct regions: cutoff, triode (or linear), and saturation.
Labeling the regions of operation:
1. Saturation Region: In this state, the MOSFET is fully on, and Id remains relatively
constant concerning the drain-source voltage VDS. This condition is achieved when VGS is
sufficiently high (VGS ≥ VTH) and VDS ≥ VGS - VTH, implying VGS ≥ 2V and VDS ≤ 1.2V.
2. Triode (or Linear Region): This region lies between the cutoff and saturation regions. ID
varies in response to changes in VDS, and the MOSFET operates in an amplification mode.
The conditions for this region are VGS ≥ VTH and VDS ≤ VGS - VTH, indicating VGS ≥ 2V
and VDS ≥ 1.2V.
3. Cutoff Region: In this region, the MOSFET is off, resulting in minimal drain current, and
VGS is below the threshold voltage (VGS < VTH), specifically VGS < 1.2V.
5- On the same graph, plot the static load line IDS vs. VDS and record from
the graph the operating point Q:
Operating point:Idq=4.4mA Vdsq= 6.3V
6- Plot the characteristic IDS vs. VGS (LOG scale) using the .DC analysis
command and Label its regions of operation (subthreshold, quadratic and
linear):
7- On the same graph, plot the static load line IDS vs. VDS, determine
the region of operation of the MOSFET for each VGS and record all the
operating points:
VDS 5 1 15
VGS 3 1 (VGS)
.param VGS=4
. step param VGS list 1 3.2 4
. dc VDS 0 15 0.1
II- MOSFET application:
1- Give the appropriate nodes to connect all the elements in the circuit:
.LIB
R4 0 1 1k
R3 0 3 100k
C4 0 1 1u
Vsin 2 0 SIN(0 10m 1k) AC 10m 1k
Vcc 6 0 15
C2 2 3 4.7u
R2 3 6 100k
R1 6 5 1k
C1 5 7 1u
Rload 7 0 10k
.model MI NMOS (KP=2m Vto=2 LAMBDA=0 W=300u L=100u)
M1 5 3 1 1 M1
.DC VDC 0 15 1m
.probe
.op
.end
2- Obtain the input-output transfer characteristic (VTC) using PSpice DC sweep.
You need to remove the coupling capacitors C for this simulation. Find the
voltage gain from the plot:
To find the gain we need to calculate the slope (pente):
AV=(12-14.1)/(6-3.33)=0.78
3- Obtain the frequency response of the amplifier using PSpice AC sweep. You
need to use C for this simulation. Change the MOSFET by IRF150 and Find the
voltage gain and
Voltage gain Av=5.74
Bandwidth: W=5.41 MegaHz
4- Obtain the input-output waveform of the amplifier from PSpice, using a
10mV, 1kHz sine wave input:
Graph interpretation :
The graph for the N-type MOSFET amplifier comprises output
characteristics, depicting the variation in drain current with drain-to-
source voltage, and transfer characteristics, illustrating the relationship
between drain current and gate-to-source voltage. These graphs provide
insights into the amplification behavior of the MOSFET, where the
saturation region signifies active amplification, and the cutoff region
indicates transistor turn-off. A thorough analysis of these characteristics
is essential for the design and optimization of N-type MOSFET amplifiers.
Conclusion :
In summary, engaging in hands-on experimentation with N-type MOSFET
transistors entails a comprehensive exploration of their operational
characteristics, amplification performance, biasing effects, stability
considerations, power dissipation, and practical applications. Profound
insights into these aspects are pivotal for circuit design, performance
optimization, and informed decision-making regarding the transistor's
application across a spectrum of electronic uses.
