NE612 PhilipsSemiconductors
NE612 PhilipsSemiconductors
NE612 PhilipsSemiconductors
ADS
0, N Packages
lithic double-balanced mixer with on- • Low cost
board oscillator and voltage regulator. It
• Operation to 500MHz
is intended for low cost, low power
communication systems with signal fre- • Low radiated energy INPUT Vee
quencies to 500MHz and local oscillator • Low external parts count; INPUT B 2 7 OSCILLA TOR
frequencies as high as 200M Hz. The suitable for crystal/ceramic filter GROUND 3 6 OSCILLA TOR
mixer is a "Gilbert cell" multiplier config- • Excellent sensitivity, gain, and OUTPUT A 4 5 OUTPUT B
uration which provides gain of 14dB or noise figure
more at 49MHz. TOP VIEW
APPLICATIONS
The oscillator can be configured for a • Cordless telephone
crystal, a tuned tank operation, or as a
• Portable radio
buffer for an external L.O. Noise figure at
49MHz is typically below 6dB and makes • VHF transceivers
the device well suited for high perfor- • RF data links
mance cordless telephone. The low • Sonabuoys
power consumption makes the NE612 • Communications receivers
excellent for battery operated equip-
• Broadband LANs
ment. Networking and other communica-
• HF and VHF frequency
tions products can benefit from very low
conversion
radiated energy levels within systems.
The NE612 is available in an 8-lead dual
in"line plastic package and an 8-lead SO
(surface mounted miniature package).
BLOCK DIAGRAM
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE
8-Pin Plastic DIP o to +70°C NE612N
8-Pin Plastic SO o to +70°C NE612D
DESCRIPTION OF OPERATION
The NE612 is a Gilbert cell, an oscillator/
0.5 to 1.3pH l
THIRD OVERTONE CRYSTAL
buffer, and a temperature compensated bias
network as shown in the equivalent circuit.
Vee The Gilbert cell is a differential amplifier (Pins
1 and 2) which drives a balanced switching
cell. The differential input stage provides gain
and determines the noise figure and signal
150pF
handling performance of the system.
~
NE612 1.5 to The NE612 is designed for optimum low
44.2p power performance. When used with the
NE614 as a 49MHz cordless telephone sys-
120pF ":"
tem, the NE612 is capable of receiving
-119dBm signals with a 12dB SIN ratio.
Third-order intercept is typically -15dBm
(that's approximately + 5dBm output intercept
because of the RF gain). The system design-
er must be cognizant of this large signal
limitation. When designing LANs or other
closed systems where transmission levels
are high, and small-signal or signal-to-noise
Figure 1. Test Configuration issues not critical, the input to the NE612
should be appropriately scaled.
Besides excellent low power performance The mixer outputs (Pins 4 and 5) are also permissible oscillation frequency. If the re-
well into VHF, the NE612 is designed to be internally biased. Each output is connected to quired L.O. is beyond oscillation limits, or the
flexible. The input, output, and oscillator ports the internal positive supply by a 1.5kn resis- system calls for an external L.O., the external
can support a variety of configurations provid- tor. This permits direct output termination yet signal can be injected at Pin 6 through a DC
ed the designer understands certain con- allows for balanced output as well. Figure 4 blocking capacitor. External L.O. should be
straints, which will be explained here. shows three single-ended output configura- 200mVp_p minimum to 300mVp_p maximum.
tions and a balanced output.
The RF inputs (Pins 1 and 2) are biased Figure 5 shows several proven oscillator
internally. They are symmetrical. The equiva- The oscillator is capable of sustaining oscilla- circuits. Figure 5a is appropriate for cordless
lent AC input impedance is approximately tion beyond 200MHz in crystal or tuned tank telephones. In this circuit a third overtone
1.5k II 3pF through 50MHz. Pins 1 and 2 can configurations. The upper limit of operation is parallel-mode crystal with approximately 5pF
be used interchangeably, but they should not determined by tank "Q" and required drive load capacitance should be specified. Capac-
be DC biased externally. Figure 3 shows levels. The higher the Q of the tank or the itor C3 and inductor L1 act as a fundamental
three typical input configurations. smaller the required drive, the higher the trap. In fundamental mode oscillation the trap
is omitted.
Figure 6 shows a Colpitts varacter tuned tank
oscillator suitable for synthesizer-controlled
applications. It is important to buffer the
output of this circuit to assure that switching
spikes from the first counter or prescaler do
not end up in the oscillator spectrum. The
dual-gate MOSFET provides optimum isola-
tion with low current. The FET offers good
isolation, simplicity, and low current, while the
bipolar circuits provide the simple solution for
non-critical applications. The resistive divider
in the emitter-follower circuit should be
chosen to provide the minimum input Signal
which will assume correct system operation.
m
GND
NE612
a. Single-Ended Tuned Input b. Balanced Input (for Attenuation c. Single-Ended Untuned Input
of Second Order Products)
November 3, 1987
165
Product Specification
CFU455
OR EQUIVALENT
NE612 NES12
a. Colpitts Crystal Oscillator b. Colpitts LIC Tank Oscillator c. Hartley LIC Tank Oscillator
(Overtone Mode)
Figure 5. Oscillator Circuits
November 3, 1987
166
Product Specification
S.5I'H
1000PF
T
F":"
~ DC CONTROL VOLTAGE
5 1000pF 1 .. FROM SYNTHESIZER
O.06I'H t t MV210S
OR EaUIVALENT
JO.01PF
100K 2K J
3SK126
O.01pF
t---o 2N5484
J
>-/ f---o
330 O.01pF TO SYNTHESIZER
Figure 6. Colpitts Oscillator Suitable for Synthesizer Applications and Typical Buffers
TEST CONFIGURATION
NE612
November 3, 1987
167
Product Specification
-14.5
-10
-11
~
:;)
Q.
~
-10
-20
e-
CD
:!!.
-12
-13
I
12.5 ~
-12
12.5- r--
-15.5
-16.5
",
~ --------
:;)
0
E
5
0
-14
-15
I-- ./13.5
-30 ffi -17.5
~ ~
-40
! -18
-17 -18.5
-so -18 -19.0
-19.5
-so -40 -30 -20 -10 10 0 +40 +70
dBmlNPUT VCC(VOLTS) TEMPERATURE (OC)
18,---------.-------,
C 4
.s
~
iD
:!!.
iD ffi w
:!!. rr: rr:
:;)
z 14 § 3 CJ 6 4V
C 0 6V ii:
CJ w
~ UI 8V
Q.
Q. i5
2
Z
i7l 4V 6V
10 1 4
0 +40 +70 0 +40 +70 0 .,.40 .,.70
TEMPERATURE ("C) TEMPERATURE (OC) TEMPERATURE (OC)