PNP Epitaxial Silicon

Transistor

BD136 Series
BD136 / BD138 / BD140
Applications
[Link]
• Complement to BD135, BD137 and BD139 Respectively
• These are Pb−Free Devices

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Max Unit
Collector−Base Voltage VCBO V
BD136 −45
BD138 −60
BD140 −80 TO−126
CASE 340AS
Collector−Emitter Voltage VCEO V 1 2 3
BD136 −45 1 Emitter
BD138 −60 2 Collector
BD140 −80 3 Base
Emitter−Base Voltage VEBO −5 V
Collector Current (DC) IC −1.5 A
Collector Current (Pulse) ICP −3.0 A MARKING DIAGRAM
Base Current IB −0.5 A
Stresses exceeding those listed in the Maximum Ratings table may damage the YWW
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BD1XX

THERMAL CHARACTERISTICS
Rating Symbol Max Unit Y = Year
WW = Work Week
Collector Dissipation PC 12.5 W BD1XX = Specific Device Code
Collector Dissipation (TA = 25°C) PC 1.25 W XX = 36, 38, 40

Junction Temperature TJ 150 °C

Storage Temperature Range TSTG −55~150 °C
ORDERING INFORMATION

Device Package Shipping

BD13610STU 60 Units/ Tube

BD13610S 500 Units/ Bulk Box

BD13616STU 60 Units/ Tube

BD13616S 500 Units/ Bulk Box

TO−126
BD13810STU (Pb−Free) 60 Units/ Tube

BD13816STU 60 Units/ Tube

BD14010STU 60 Units/ Tube

BD14016STU 60 Units/ Tube

BD14016S 500 Units/ Bulk Box

© Semiconductor Components Industries, LLC, 2000 1 Publication Order Number:

May, 2024 − Rev. 2 BD136/D
 BD136 Series

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) IC = −30 mA, IB = 0 V
BD136 −45
BD138 −60
BD140 −80
ICBO Collector Cut−off Current VCB = −30 V, IE = 0 −0.1 mA
IEBO Emitter Cut−off Current VEB = −5 V, IC = 0 −10 mA
hFE1 DC Current Gain (Note 1) VCE = −2 V, IC = −5 mA 25
hFE2 VCE = −2 V, IC = −150 mA

BD13610/BD13810/BD14010 63 160
BD13616/BD13816/BD14016 100 250
hFE3 VCE = −2 V, IC = −500 mA 25
VCE(sat) Collector−Emitter Saturation Voltage IC = 500 mA, IB = 50 mA −0.5 V
(Note 1)
VBE(on) Base−Emitter ON Voltage (Note 1) VCE = −2 V, IC = −0.5 A −1 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed

[Link]
2
 BD136 Series

TYPICAL PERFORMANCE CHARACTERISTICS

100 −500

VCE(sat), SATURATION VOLTAGE [mV]

90 VCE = −2 V −450 IC = 20 IB
80 −400
hFE, DC CURRENT GAIN

70 −350
60 −300
50 −250
40 −200 IC = 10 IB
30 −150
20 −100
10 −50
0 −0
−10 −100 −1000 −1E−3 −0.01 −0.1 −1 −10
IC[mA], COLLECTOR CURRENT IC, COLLECTOR CURRENT [A]

Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Volatage

−1.1 −10
VBE, BASE−EMITTER VOLTAGE [V]

−1.0 VBE(sat)

IC, COLLECTOR CURRENT [A]

IC MAX. (Pulsed) 10 ms
−0.9 IC = 10 IB
100 ms
−0.8 1 ms
−1
−0.7 VBE(on) IC MAX. (Continues)
VCE = −5 V DC
−0.6
−0.5
−0.4 −0.1

−0.3

BD136
BD138
BD140
−0.2
−0.1 −0.01
−1E−3 −0.01 −0.1 −1 −10 −1 −10 −100
IC, COLLECTOR CURRENT [A] VCE, COLLECTOR−EMITTER VOLTAGE [V]

Figure 3. Base−Emitter Voltage Figure 4. Safe Operating Area

20.0
17.5
PC, POWER DISSIPATION [W]

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE [°C]

Figure 5. Power Derating

[Link]
3
 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−126−3LD
CASE 340AS
ISSUE O
DATE 30 SEP 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13817G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−126−3LD PAGE 1 OF 1

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