MODULE-1

TEXT-1: (MICROELECTRONIC CIRCUITS BY SEDRA

SMITH,KENNETH C.SMITH)

1. BJT BIASING
2. SMALL SIGNAL OPERATION MODELS
3. MOSFETS
4. SMALL SIGNAL OPERATION AND MODELLING
 CHAPTER-1
BIASING IN BJT AMPLIFIER CIRCUITS
A transistor is a semiconductor device used to amplify or switch
electronic signals and electrical power. It is composed of
semiconductor material usually with three terminals for connection
to an external circuit.

Semiconductors: These are the materials which have a conductivity

between conductors (generally metals) and nonconductors or insulators
(such as most ceramics). Semiconductors can be pure elements, such as
silicon or germanium.
1. As a switch: Transistors are commonly used in digital circuits as
electronic switches which can be either in an "on" or "off" state. Transistor
conducts current across the collector-emitter path only when a voltage is
applied to the base. When no base voltage is present, the switch is off.
When base voltage is present, the switch is on.

2. As an amplifier: It takes in a tiny electric current at one end (an

input current) and produces a much bigger electric current (an output
current) at the other.
• BJT(BIPOLAR JUNCTION TRANSISTOR) : A bipolar junction
transistor is a type of transistor that uses both electrons and holes as
charge carriers.

• BIASING: Applying the external DC voltage of correct polarity and

magnitude to two junctions of the transistor.
• Biasing methods make the transistor circuit to work in three kinds of
regions such as Active region, Saturation region, Cutoff region.

E-B junction C-B junction Region of operation

• Forward biased Forward biased Saturation region
• Forward biased Reverse biased Active region
• Reverse biased Reverse biased Cutoff
region
NEED FOR BIASING:
1. To operate the transistor in the desired region-The function of the
“DC Bias level” is to correctly set the transistors Q-point by setting
its Collector current ( IC ) to a constant and steady state value.
2. To get the output signal power greater than input signal power.
QUIESCENT POINT(QPOINT)-OPERATING POINT:
1.Graphically speaking, it is a point where the device characteristics
and load line intersects.

The DC load line is drawn for the output Characteristics of Diode, BJT
and FET.
The maximum current that is flowing in the circuit Vs maximum Voltage
across the Device is the DC Load Line.
2. Its a point at which device starts operating.
3. When transistor is biased, a certain current and voltage
conditions for the transistor are established.

• Operating point shifts with the changes in transistor

parameters like β, ICO and VBE.
• Transistor parameters are temperature dependent meaning,
operating point also varies with changes in temperature.

Classical discrete circuit bias[voltage divider bias]

Different types of biasing circuits are:

1. Fixed bias.
2. Emitter stabilized bias circuit( establishing constant current in
the base)
3. Voltage divider bias or potential divider
4. Collector-to-base bias.
Fig1. fixing VBE fig2. Fixing IB

• VBE and β varies with the temperature and hence currents IB

and IC will also vary. Hence proper biasing cannot be
maintained.
• First two methods are not recommended, because they result in
wide variations in IC and hence VCE.
 Biasing of BJT Amplifier circuit

• Biasing to establish constant DC Collector

current Ic & should be
• Calculatable
• Predictable
• Insensitive to temp. variations
• Insensitive to large variations in β

– To allow max. output signal swing with no

distortion
Figure… (a) A common-emitter transistor amplifier biased
by a feedback resistor RB.
 A common-emitter transistor amplifier biased by
a feedback resistor RB.

Biasing using collector - Base Feed Back Resistor

Common Emitter configuration only

RB provide negative Feedback

 A common-emitter transistor amplifier biased by
a feedback resistor RB.

I E  IC  I B
IE
VCC  I E RC  I B RB  VBE IB 
 1

VCC  VBE
IE 
RB
RC 
 1

VCC  VBE
RB
RC 
 1
 A common-emitter transistor amplifier biased by
a feedback resistor RB.

RB
RC 
 1
I E RB
VCB  I B RB 
 1

 R B Determines signal swing at the collector.

 R B small
 Signal swing will be the small.
 Input resistance will be small Loading
Small Signal Model
& Analysis
The operation of the transistor as an
amplifier.
Conceptual circuit with the signal source eliminated .
(vbe =0)
 DC Analysis
Signal source eliminated

vbe  0
VBE

I C  ISe VT

IC
IE 

IC
IB 

IE
IB 
 1
VC  VCE  VCC - I C R C
Active Mode Verification
VC>VB-0.4 V
 The collector Current & Trans-conductance

vBE  VBE  vbe

v BE V BE v be

iC  I S e VT
 ISe VT
e VT

v be

iC  I C e VT

v be  V T
 v be 
i C  I C 1  
 V T 

Valid for v be  10 mV
Small Signal Approximat ion
 The collector Current & Trans-conductance
IC
iC  I C  vbe
VT

DC Bias Signal Component

IC
ic  vbe
VT
ic  g m vbe
IC
g m  transconduc tan ce  Directly Proportional to I C
VT
For vbe<< VT, the transistor behaves as a
voltage-controlled current device
The trans-conductance of the controlled source is gm
Output resistance is infinity
 Base Current & Input Resistance at the Base
IC
iC  I C  vbe
VT
iC  g m vbe
iC I C IC vbe
iB    vbe ib  g m
   VT 
iB  I B  ib IB 
IC iC   ib

vbe 
ib 
I C vbe g m vbe
 r  
 VT  ib gm
g m vbe
ie 
r input resistance between Base & Emitter

Looking into the base
vbe 
v re  
r  be ie gm
ib
 VT r    1re
r  
gm I B
Emitter Current & Input Resistance @ Emitter
iC I C iC
iE   
  
iE  I E  ie
iC I I
ie   C vbe  E vbe
 VT VT
re Small resistance between base & Emittter,
looking into the Emitter Known as emitter resistance
v V  1
re  be  T  
ie I E gm gm
vbe  ie re
vbe  ib r  ie re    1i re

re    1re
iC
r 
ib

ib    1ie
rπ    1re
 Voltage Gain
vC  VCC  RC iC
 VCC  RC I C  ic 
 VCC  RC I C   RC ic
vC  VC  RC ic
vc   RC ic   g m RC vbe
vc IC
Av    g m RC   RC
vbe VT
I C RC VRC
Av   g m RC   
VT VT
DC-AC Models
Large Signal Model Small Signal Model
The amplifier circuit
Figure 5.51 Two slightly different versions of the simplified
hybrid-pmodel for the small-signal operation of the BJT.
Figure 5.52 Two slightly different versions of what is
known as the T model of the BJT.
The hybrid- small-signal model, with the resistance ro
included.

VA  VCE VA
ro  
IC IC

VBE & I B and VCE & I C are DC bias values

 vo  -g m vbe ro || RC  Thus gain is slightly reduced

 ro can be neglected if ro  10RC
Figure 5.59 Basic structure of the circuit used
to realize single-stage, discrete-circuit BJT
amplifier configurations.
 Problem 5.130
• Find the common-emitter amplifier shown in Fig.
P5.130, Let VCC =9V, R1 = 27kΩ, R2 = 15kΩ, RE
= 1.2kΩ, and Rc = 2.2kΩ. The transistor has β =
100 and VA = 100 V. Calculate the dc bias
current IE. If the amplifier operates between a
source for which Rsig = 10 kΩ and a load of 2kΩ
replace the transistor with its hybrid-Π model,
and find the value of Rm, the voltage gain vo
v sig
and the current gain io
ii
Figure P5.130
 Figure P5.130
DC Analysis
Suppress the AC (independent Sources)
Short Circuit Voltage Sources
Open Circuit the Capacitors
Calculate DC Node Voltages & Loop Currents
 Figure P5.130
9v
DC Analysis
IC 2.2k
IR

RB 
VBB vBE
 IE 1.2k

β = 100 , α = 0.99
VA = 100V
IE = ?, Rin = ?, overall gain vo/vsig, io/i1

VCC 15k
VBB   3.21V
27  15k
15  27
RB   9.64k
15  27
 Solution P5.130
• DC Values 9v

VBB  VBE
IE  IC 2.2k
R
RE  B IR 1.92 mA
 1
9.64 KΩ
3.21  0.7
IE   1.94mA RB 
9.64
1.2  v BE
101
I C  0.99 1.94  1.92mA  1.2k
3.21 V 1.94 mA
IE
 Solution P5.130
9v
• Check for Mode
VB  VBE  VE  0.7  1.94 1.2  2.33V IC 2.2k
IR 1.92 mA
VC  VCC  RC I C  9  2.2 1.92  4.776V
9.64 KΩ

VC  VB  0.4  4.776  2.33  2.446V RB 

v BE
 1.2k
3.21 V 1.94 mA
IE
ACTIVE MODE VCB > - 0.4 V
 • Small Signal Model Solution P5.130
10k
v sig vo
 g m vbe
27k 15k r vbe RC RL
ro


I C 0.99 1.94
IC = 1.92 mA gm    76.8mA / V
VT = 25 mV VT 0.025
β = 100 , α = 0.99  100
VA = 100 V r    1.3k
g m 76.8
VA
ro   52.1k
IC Ri  RB || r  1.15k
Ro  ro || RC  2.11k
 Solution P5.130
10k
vsig vo
 g m vbe
27k 15k r vbe RC RL
ro


vo vi vo
Av   
vs vs vi
 -g m ro || RC || RL 
vi Ri 1.15 vo
 
vS Rsig  Ri 10  1.15 vi

 g m ro || RC || RL   8.13V / V
Ri
Av  
Rsig  Ri

vo vS io v Rsig  Ri
io  ii  Ai   o   45.3 A / A
RL Rsig  Rin ii vS RL
 CE with pi Model

10 k 
v sig vo
 g m v be
27 k  15 k  r v be RC RL
ro


E
CE with ‘T’ Model
 Comparison ‘pi’ Vs ‘T’ Model
10 k 
v sig vo
 g m v be
27 k  15 k  r v be RC RL
ro


E
 Biasing In MOS Amplifier Circuits

What is MOSFET:
The MOSFET is one kind of FET (Metal Oxide Field Effect
Transistor), which consists of three terminals namely gate,
source, and drain. Here, the drain current is controlled by the
voltage of the gate terminal Therefore, these transistors
are voltage-controlled devices.
• Biasing by fixing Vgs: