EECS 105 Spring 2004, Lecture 25
Lecture 25:
CS, CD and CG circuits
Prof J. S. Smith
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Context
In today’s lecture, we will discuss the
various ways that a transistor can be
used as a component in active linear
circuits, to amplify, act an impedance
buffer, and so on.
These simple circuits will then be used
as building blocks for building more
complex circuits.
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Reading
For about a week, we will continue with chapter 8 in
the text, single stage amplifiers. We will focus
primarily on FET circuits, Common Source(CS) ,
Common Gate (CG), and Common Drain(CD),
sections: 8.1,8.3, 8.4, 8.5, 8.8, 8.9
Following single transistor configurations, we will
start discussing multistage and cascaded circuits,
which are in chapter 9 of the text.
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Lecture Outline
z MOS Common Source Amp
z Current Source Active Load
z Common Gate Amp
z Common Drain Amp
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Common-Source Amplifier
Isolate DC level
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Configurations (CS)
z Since the transistor is a three terminal device, we
can make a two port device (input and output) but
one of the terminals is going to have to be used for
both the input and the output ports. The
terminology follows…
z Common Source (CS)
– Provides current and voltage gain
– Example: an NMOS device with the source grounded,
the input being a voltage between the gate and ground,
and the output being a voltage between the drain and
ground.
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CD
z Common Drain (CD): high impedance input and
low impedance output. Low voltage gain
z Example: An NMOS transistor with its Drain at
+rail, with an input applied between the gate and
(ground/+rail, the same for small signal analysis),
and the output taken from the source with reference
to ground.
z Example: A PMOS transistor with its Drain at
ground, the input applied between the gate and
ground, and the output taken from the source with
reference to ground
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CG
z Common Gate, provides a low impedance input,
and a high impedance output. (converts a weak
current source to a strong current source)
z The gate is held at small signal ground, while the
input is applied at the source, and the output is
taken at the drain.
z Low current gain
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Common source
z In the common source amplifier, the input is used
to modulate the GS voltage, and the DS voltage is
the output, giving a voltage gain depending on the
load line:
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Load-Line Analysis to find Q
VDD − Vout
I RD =
RD
Q
1
5V slope =
ID = 10k
10k
0V
ID =
10k
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Small-Signal Analysis
Rin = ∞
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Two-Port Parameters:
Generic Transconductance Amp
Rs
+
vs vin Rin Gm vin Rout RL
−
Find Rin, Rout, Gm
Rin = ∞
Gm = g m Rout = ro || RD
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Two-Port CS Model
Reattach source and load one-ports:
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Maximize Gain of CS Amp
Av = − g m RD || ro
z Increase the gm (more current)
z Increase RD (free? Don’t need to dissipate extra
power)
z Limit: Must keep the device in saturation
VDS = VDD − I D RD > VDS , sat
z For a fixed current, the load resistor can only be
chosen so large
z To have good swing we’d also like to avoid getting
to close to saturation
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Current Source Supply
z Solution: Use a
current source!
z Current independent
of voltage for ideal
source
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CS Amp with Current Source Supply
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Load Line for DC Biasing
Both the I-source and the transistor are idealized for DC bias
analysis
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Two-Port Parameters
From current
source supply
Rin = ∞
Gm = g m
Rout = ro || roc
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
P-Channel CS Amplifier
DC bias: VSG = VDD – VBIAS sets drain current –IDp = ISUP
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Two-Port Model Parameters
Small-signal model for PMOS and for rest of circuit
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Common Gate Amplifier
DC bias:
I SUP = I BIAS = I DS
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CG as a Current Amplifier: Find Ai
iout = id = −it
Ai = −1
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CG Input Resistance
vgs = −vt
⎛v −v ⎞
it = − g m vgs + g mb vt + ⎜ t out ⎟
At input:
⎝ ro ⎠
Output voltage: v = −i (r || R ) = i (r || R )
out d oc L t oc L
⎛ v − ( roc || RL ) it ⎞
it = g m vt + g mb vt + ⎜ t ⎟
⎝ ro ⎠
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Approximations…
z We have this messy result
1
g m + g mb +
1 i ro
= t =
Rin vt r || RL
1 + oc
ro
z But we don’t need that much precision. Let’s start
approximating:
1 RL
g m + g mb >> roc || RL ≈ RL ≈0
ro ro
1
Rin =
g m + g mb
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CG Output Resistance
vs v −v
− g m vgs − (− g mb vs ) + s t = 0
RS ro
⎛ 1 1⎞ v
vs ⎜ + g m + g mb + ⎟ = t
⎝ RS ro ⎠ ro
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CG Output Resistance
Substituting vs = itRS
⎛ 1 1⎞ v
it RS ⎜ + g m + g mb + ⎟ = t
⎝ RS ro ⎠ ro
The output resistance is (vt / it)|| roc
⎛ ⎛ r ⎞⎞
Rout = roc || ⎜ RS ⎜ o + g m ro + g mb ro + 1⎟ ⎟
⎜ ⎟
⎝ ⎝ RS ⎠⎠
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Approximating the CG Rout
Rout = roc || [ro + g m ro RS + g mb ro RS + RS ]
The exact result is complicated, so let’s try to
make it simpler:
g m ≈ 500 µS g mb ≈ 50 µS ro ≈ 200kΩ
Rout ≅ roc || [ro + g m ro RS + RS ]
Assuming the source resistance is less than ro,
Rout ≈ roc || [ro + g m ro RS ] = roc || [ro (1 + g m RS )]
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CG Two-Port Model
Function: a current buffer
• Low Input Impedance
• High Output Impedance
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Common-Drain Amplifier
W 1
I DS = µ Cox (VGS − VT ) 2
L 2
2 I DS
VGS = VT +
W
µ Cox
L Weak IDS dependence
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CD Voltage Gain
Note vgs = vt – vout vout
= g m vgs − g mb vout
roc || ro
vout
= g m ( vt − vout ) − g mb vout
roc || ro
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CD Voltage Gain (Cont.)
vout
KCL at source node: = g m ( vt − vout ) − g mb vout
roc || ro
⎛ 1 ⎞
⎜ + g mb + g m ⎟ vout = g m vt
⎝ roc || ro ⎠
Voltage gain (for vSB not zero):
vout gm
=
vin 1
+ g mb + g m
roc || ro
vout gm
≈ ≈1
vin g mb + g m
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CD Output Resistance
Sum currents at output (source) node:
vt
Rout = ro || roc || it = g m vt + g mb vt
it
1
Rout ≈
g m + g mb
Department of EECS University of California, Berkeley
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EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
CD Output Resistance (Cont.)
ro || roc is much larger than the inverses of the
transconductances Æ ignore
1
Rout ≈
g m + g mb
Function: a voltage buffer
• High Input Impedance
• Low Output Impedance
Department of EECS University of California, Berkeley
EECS 105 Spring 2004, Lecture 25 Prof. J. S. Smith
Department of EECS University of California, Berkeley
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