BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)
DESCRIPTION The BTA/BTB08 S/A triac family are high perform- ance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current BTA Tc = 75°C 8 A
(360° conduction angle) BTB Tc = 80°C
ITSM Non repetitive surge peak on-state current tp = 8.3 ms 84 A
( Tj initial = 25°C ) tp = 10 ms 80
I2 t I2 t value tp = 10 ms 32 A2s
dI/dt Critical rate of rise of on-state current Repetitive 10 A/µs
Fig.1 : Maximum RMS power dissipation versus RMS Fig.2 : Correlation between maximum RMS power on-state current (F=50Hz). dissipation and maximum allowable temperatures (Tamb (curves are cut off by (dI/dt)c limitation) and Tcase) for different thermal resistances heatsink + contact (BTA).
Fig.3 : Correlation between maximum RMS power Fig.4 : RMS on-state current versus case temperature. dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).
2014-6-9 3 www.kersemi.com BTA08 S/A / BTB08 S/A Fig.5 : Relative variation of thermal impedance versus Fig.6 : Relative variation of gate trigger current and pulse duration. holding current versus junction temperature.
Zth/Rth 1
Zt h( j-c)
0.1 Zt h(j-a)
tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current Fig.8 : Non repetitive surge peak on-state current for a versus number of cycles. sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2 t.
