Proceeding of 2018 IEEE International Conference on Current Trends toward Converging Technologies, Coimbatore, India
LNA Design for 3 cm Band Applications
Makesh Iyer T. Shanmuganantham
Electronics Engineering Department Electronics Engineering Department
Pondicherry University Pondicherry University
Puducherry, India Puducherry, India
makwave.26791@gmail.com shanmugananthamster@gmail.com
Abstract — This work deals with the designing of dB [5]. These work implies that the good power gain,
different low noise amplifiers for 3 cm band optimum noise figure and proper matching networks for
application which operates in 10.00 to 10.5 GHz efficient impedance matching and maximum power
frequency band with 10.40 GHz as the center transfer, are the vital parameters that determine the
frequency. The amplifier is designed using GaAs performance of a low noise amplifier though there is a
HEMT ATF – 36077 with different passive trade-off between the gain, stability and noise figure of
components in the feedback network which is one of the design.
the technique to improve stability of potentially
unstable device and make it unconditionally stable. It In this paper we have managed to design low noise
is observed that the noise immunity is more in LNA amplifiers with different feedback devices to improve the
design in which feedback network with a resistor and stability of the device for 3 cm band applications using
inductor in series is used. This design resulted in noise GaAs HEMT by balancing the trade-off parameters.
figure of 1.43 dB and power gain of 21.654 dB. The
comparative analysis of the LNA design is discussed in II.DESIGN ASPECTS
this paper.
The Low Noise Amplifier is designed using GaAs HEMT
Keywords— LNA, X band, GaAs HEMT, power gain, ATF – 36077 with different stability improvement
noise figure, s parameters. techniques which simultaneously improves the device
stability and makes it unconditionally stable, gain of the
I.INTRODUCTION amplifier with less effect on noise figure.
The 3 centimetre band also known as 10 GHz band falls Advanced Design System (ADS) simulation tool is used
in SHF (microwave) EM spectrum which is used for for designing the low noise amplifier. The active device
amateur radio and amateur satellite applications. The used in the design is from S - parameter library which
amateur radio is between 10.00 GHz and 10.50 GHz works on fixed bias i.e. the s parameters are fixed for a
band, and the amateur satellite utilizes 10.45 GHz and particular bias point of the device.
10.50 GHz.
Theoretically stability of the device is checked using B
Mohammad Fallahnejad, Yasaman Najmabadi, et al, and K - |Δ| test which is discussed in [6]. The condition
designed different X band low noise amplifiers using for stability is that if K > 1, |∆| < 1 and B = +ve, then the
GaAs HEMT with lumped matching components device is stable for certain conditions and if K < 1 then
obtaining a power gain of 14.2 dB and noise figure of device is potentially unstable. This condition will tend the
0.803 dB and Microstrip matching components with the device to oscillate.
result of improved gain and comparatively less noise
figure [1]. Christina Lessi, Evangelia Karagianni designed In later stages there was another parameter introduced to
an X band LNA for Marine Navigation RADAR and check the stability of the active device for stable operation
obtained a power gain of 15 dB and noise figure of 5 dB given by,
[2]. Jyh Chyurn Guo and Ching Shiang Lin designed an 2
1 |S |
ultra-wide band CMOS low noise amplifier using resistive 11 (1)
feedback under forward body bias condition and obtained | S22 S11* | | S12S21 |
the noise figure of 3.95 dB, gain of 10.55 dB [3]. Z.
Zeinadini, Z. H. Firouzeh, et al, designed balanced low For the device to operate in unconditionally stable region
noise amplifier using HJFET for 9 – 11 GHz range and the value of µ should be greater than 1 (µ > 1) where ∆ is
obtained a power gain of 12.75 dB and noise figure of given as,
0.537 dB [4]. Yen-Chih Chen, Yunshan Wang, et al, S11S 22 S12S 21 (2)
designed an ultra-broadband two stage common source
GaAs HEMT LNA for Radio Astronomy Applications If µ < 1 then device is potentially unstable. This condition
and obtained a power gain of 20 dB and noise figure of 2
978-1-5386-3702-9/18/$31.00 © 2018 IEEE 1
Proceeding of 2018 IEEE International Conference on Current Trends toward Converging Technologies, Coimbatore, India
will tend the device to oscillate. In this case the gain of
the device will be maximum stable gain (MSG) and if the
device is stable then the gain will be maximum allowable
gain (MAG) which are mathematically explained in [7].
Here the circuit is designed using the distributed
components i.e. transmission line equivalent of the
lumped components because of the fact that is described
in [8]. The 50 ohm terminations are provided for
calculating the S parameters of the network.
The substrate used for designing the microstrip matching Fig. 2. Stability Factor
components is RT Duroid 5880 of Rogers Corporation
which has εr of 2.2, tanδ of 0.0009, substrate height (h) of Hence this result K > 1, |∆| < 1 conveys that the device
1.6 mm, metal thickness (t) of 0.035 mm, metal being tends to be unconditionally stable and the gate resistance
copper conductivity (ζ) of 5.8 x e7. is an appropriate method to make the device
unconditionally stable.
III.PROPOSED DESIGN
Another technique to improve stability is to connect a
Different techniques are available to improve the stability series resistor and inductor in the feedback network
of low noise amplifier [9]. But each technique has its own between the gate and drain terminal of HEMT which is
limitations and hence the optimum and efficient technique shown in fig. 3.
has to be determined from the analysis. These techniques
are:
Connecting a feedback resistance between the gate
and drain terminal of the active device.
Connecting an inductor in series with resistor in
feedback network.
Connecting a capacitor in series with resistor in
feedback network.
In this work each technique is implemented with HEMT
device and a comparative study is done to determine the
most stable and best noise immune amplifier.
Fig. 3. Proposed LNA with R – L feedback
The low noise amplifier designed with feedback resistor
The Rollet’s stability factor K and |∆| obtained is shown
of value 220 Ω for this application is shown in fig. 1.
above in fig. 4 which is obtained as 1.000 and 0.0.110
respectively.
Fig. 1. Proposed LNA with feedback resistor RF
The Rollet’s stability factor K and |∆| obtained is shown
above in fig. 2 which is obtained as 1.018 and 0.318
respectively. Fig. 4. Stability Factor
The third proposed technique is to use a series capacitor
and resistor in the feedback network which is shown in fig.
5.
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Proceeding of 2018 IEEE International Conference on Current Trends toward Converging Technologies, Coimbatore, India
Fig. 5. Proposed LNA with R – C feedback
Fig. 8. Noise Figure
The S parameters of the designed LNA obtained are shown
in fig. 9. The S11 is -39.885 dB, S21 is 14.503 dB, S12 is -
16.169 dB and S22 is -39.990 dB.
Fig. 6. Stability Factor
The Rollet’s stability factor K and |∆| obtained is shown
above in fig. 6 which is obtained as 1.018 and 0.316
respectively.
All the three techniques stability tests prove that they
improve the stability of the device and make it
unconditionally stable.
Fig. 9. S parameters
IV.RESULTS
The power gain and noise figure obtained for the R – L
The power gain and noise figure obtained for the resistive feedback LNA are 21.654 dB and 1.43 dB as shown in fig.
feedback LNA are 14.503 dB and 1.451 dB as shown in 10 and 11 respectively.
fig. 7 and 8 respectively.
Fig. 7. Power Gain Fig. 10. Power Gain
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Proceeding of 2018 IEEE International Conference on Current Trends toward Converging Technologies, Coimbatore, India
The power gain and noise figure obtained for the R – C
feedback LNA are 14.484 dB and 1.45 dB as shown in fig.
13 and 14 respectively.
Fig. 11. Noise Figure
Fig. 15. S parameters
The S parameters of the designed LNA obtained are shown
in fig. 15. The S11 is -47.827 dB, S21 is 14.484 dB, S12 is -
16.134 dB and S22 is -46.837 dB.
TABLE 1. SIMULATION RESULTS OF PROPOSED DESIGNS
Techniques S21 / G# NF
[1] 14.2 0.803
[2] 15 5
Fig. 12. S parameters
[3] 10.55 3.95
The S parameters of the designed LNA obtained are shown
[4] 12.75 0.537
in fig. 12. The S11 is -18.070 dB, S21 is 21.654 dB, S12 is
-22.253 dB and S22 is -19.452 dB. [5] multistage 20 2
Proposed R feedback LNA 14.503 1.451
R – L feedback LNA 21.654 1.43
R – C feedback LNA 14.484 1.45
G# – Power Gain
V.CONCLUSION
The results of R – L feedback LNA after implementation
in ADS is presented in this paper which proves to be
efficient and optimum LNA since its power gain obtained
is 21.654 dB. Also the noise figure obtained is 1.43 dB
that shows very high noise immunity. This comparison
signifies that for improving the stability of the active
Fig. 13. Power Gain
using feedback technique presence of inductor improves
gain more without affecting noise immunity. Further to
improve the gain of the amplifier with minimal trade-off
of noise figure cascading techniques can be used to
implement multistage low noise amplifier.
REFERENCES
[1]. Mohammad Fallahnejad, Yasaman Najmabadi, et al,
“Design and Simulation of Low Noise Amplifier at 10 GHz
By Using GaAs High Electron Mobility Transistor,” IOSR
Journal of Electrical and Electronics Engineering, vol. 10,
Fig. 14. Noise Figure Issue 5, Sep – Oct. 2015, pp. 29-34.
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Proceeding of 2018 IEEE International Conference on Current Trends toward Converging Technologies, Coimbatore, India
[2]. Christina Lessi, Evangelia Karagianni, “An X-Band Low [6]. Makesh Iyer, T Shanmuganantham, “LNA Design for
Noise Amplifier Design for Marine Navigation Radars,” WLAN Applications,” IEEE International Conference
International Journal of Communications, Network and on Circuits and Systems, December 20-21, 2017.
System Sciences, 2014, vol. 7, pp. 75-82. [7]. Makesh Iyer, T Shanmuganantham, “Design of LNA for
[3]. Jyh-Chyurn Guo, Ching-Shiang Lin, “Low Power UWB Weather RADAR,” IEEE International Conference on
CMOS LNA Using Resistive Feedback and Current- Recent Advances in Engineering and Technology,
Reused Techniques Under Forward Body Bias,” December 28-29, 2017.
Proceedings of the 47th European Microwave [8]. Makesh Iyer, T Shanmuganantham, “LNA Design for
Conference, October 10–12, 2017, Germany, pp. 584 – Airport Surveillance RADAR Receiver System,” IEEE
587. International Conference on Recent Advances in
[4]. Z. Zeinadini, Z. H. Firouzeh, et al, “Design and Engineering and Technology, December 28-29, 2017.
Fabrication of a 9–11 GHz Balanced Low Noise [9]. Makesh Iyer, T Shanmuganantham, “Design of LNA for
Amplifier Using HJFET,” Journal of Communication Satellite Uplink,” International Conference on Intelligent
Engineering, vol. 3, No. 2 July-December 2014, pp. 123 Computing Systems, December 15-16, 2017.
– 140.
[5]. Yen-Chih Chen, Yunshan Wang, et al, “An Ultra-
broadband Low Noise Amplifier in GaAs 0.1-μm
pHEMT Process for Radio Astronomy Application,”
IEEE International Symposium on Radio-Frequency
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