2MBI300N-120-01 IGBT Module
1200V / 300A 2 in one-package
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified) C1 E2
Item Symbol Rating Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V ¤ ¤
Collector Continuous IC 300 A
current 1ms IC pulse 600 A
-I C 300 A
G1 E1 G2 E2
1ms -IC pulse 600 A ¤ Current control circuit
Max. power dissipation PC 2100 W
Operating temperature Tj +150 °C VCE(sat) classification
Storage temperature Tstg -40 to +125 °C Rank Lenge Conditions
Isolation voltage Vis AC 2500 (1min.) V F 2.25 to 2.50V
Screw torque Mounting *1 3.5 N·m A 2.40 to 2.65V Ic = 300A
Terminals *2 4.5 N·m B 2.55 to 2.80V VGE = 15V
* 1 : Recommendable value : 2.5 to 3.5N·m (M5) or (M6) C 2.70 to 2.95V Tj = 25°C
*2 : Recommendable value : 3.5 to 4.5N·m (M6) D 2.85 to 3.10V
E 3.00 to 3.30V
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 3.0 V GE =0V, V CE =1200V mA
Gate-Emitter leakage current IGES – – 45 V CE =0V, V GE =±20V µA
Gate-Emitter threshold voltage VGE(th) 4.5 – 7.5 V CE =20V, I C=300mA V
Collector-Emitter saturation voltage VCE(sat) – – 3.3 V GE=15V, I C=300A V
Input capacitance Cies – 48000 – V GE =0V pF
Output capacitance Coes – 17400 – V CE =10V
Reverse transfer capacitance Cres – 15480 – f=1MHz
Turn-on time ton – – 1.2 V CC =600V µs
tr – 0.25 0.6 I C =300A
Turn-off time toff – – 1.5 V GE =±15V
tf – 0.35 0.5 R G =2.7ohm
Diode forward on voltage VF – – 3.0 I F=300A, VGE=0V V
Reverse recovery time t rr – – 0.35 I F =300A µs
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c) – – 0.06 IGBT °C/W
Thermal resistance Rth(j-c) – – 0.15 Diode °C/W
Rth(c-f)* – 0.0167 – the base to cooling fin °C/W
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI300N-120-01 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
700 700
600 600
500 500
Collector current : Ic [A]
Collector current : Ic [A]
400 400
300 300
200 200
100 100
0 0
0 1 2 3 4 5
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Tj=125°C
10 10
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
8 8
6 6
4 4
2 2
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Switching time vs. Collector current
Vcc=600V, RG=2.7 ohm, VGE=±15V, Tj=25°C Vcc=600V, RG=2.7 ohm, VGE=±15V, Tj=125°C
1000 1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
100 100
10 10
0 100 200 300 400 500 600 0 100 200 300 400 500 600
Collector current : Ic [A] Collector current : Ic [A]
2MBI300N-120-01 IGBT Module
Switching time vs. RG Dynamic input characteristics
Vcc=600V, Ic=300A, VGE=±15V, Tj=25°C Tj=25°C
1000 25
800 20
Collector-Emitter voltage : VCE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
Gate-Emitter voltage : VGE [V]
600 15
400 10
200 5
100
0 0
1 10 0 500 1000 1500 2000 2500 3000 3500 4000
Gate resistance : RG [ohm] Gate charge : Qg [nC]
Forward current vs. Forward voltage Reverse recovery characteristics
VGE=0V trr, Irr, vs. IF
500
700
600
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]
500
Forward current : IF [A]
400
300
100
200
100
0
0 1 2 3 4 5 0 100 200 300 400 500 600
Forward voltage : VF [V] Forward current : IF [A]
Reversed biased safe operating area
Transient thermal resistance +VGE=15V, -VGE <
= 15V, Tj <
= 125°C, RG >= 2.7 ohm
3000
2500
Thermal resistance : Rth (j-c) [°C/W]
0.1
2000
Collector current : Ic [A]
1500
0.01
1000
500
0.001 0
0.001 0.01 0.1 1 0 200 400 600 800 1000 1200
Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
2MBI300N-120-01 IGBT Module
Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage
Vcc=600V, RG=2.7 ohm, VGE=±15V Tj=25°C
125
100
Switching loss : Eon, Eoff, Err [mJ/cycle]
100
Capacitance : Cies, Coes, Cres [nF]
75
10
50
25
1
0
0 100 200 300 400 500 600 0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Outline Drawings, mm
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