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Electronics Lab Manual: Schedule & Experiment No. (Title) Tentative Week

The document outlines experiments to be conducted in an electronics lab over several weeks. Experiment 4 involves characterizing a bipolar junction transistor (BJT) by measuring its collector characteristics and building a common-emitter amplifier. Students will construct circuits to vary the BJT's base current and collector-emitter voltage, recording voltages and calculating current values. They will then plot the collector characteristics and measure voltages and currents in the amplifier circuit.

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100% found this document useful (1 vote)
178 views6 pages

Electronics Lab Manual: Schedule & Experiment No. (Title) Tentative Week

The document outlines experiments to be conducted in an electronics lab over several weeks. Experiment 4 involves characterizing a bipolar junction transistor (BJT) by measuring its collector characteristics and building a common-emitter amplifier. Students will construct circuits to vary the BJT's base current and collector-emitter voltage, recording voltages and calculating current values. They will then plot the collector characteristics and measure voltages and currents in the amplifier circuit.

Uploaded by

abubakarsha
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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ELECTRONICS LAB MANUAL

Schedule & Experiment No. (Title) Tentative Week 2&3 4&5 6&7 8&9 10 & 11 12 & 13 . Experiment No. (Title) Experiment No. 1 & 2 (Diode Characteristics & Zener Diode Characteristics) Experiment No. 3 (Wave Rectifier & Clipper Circuit) Experiment No. 4 (BJT Characteristics & Common-Emitter Transistor Amplifier) Experiment No. 5 (BJT Biasing Circuits) Experiment No. 6 (JFET Characteristics & Common Source Amplifier) Experiment No. 7 (FET Biasing Circuits)

EXP NO: 4

BJT Characteristics & Common-Emitter Transistor Amplifier

Objectives: To graph the collector characteristics of a transistor using experimental methods. To measure AC and DC voltages in a common-emitter amplifier.

Equipment: Instruments 1 DC Power Supply 3 Digital Multimeter (DMM) 1 Function Generator 1 Oscilloscope Components Resistors: 1 k , 10 k , 100 k , 33 k , 330 k , 10 k potentiometer, 1M potentiometer Transistors: 2N3904 Procedure: Part A : The Collector Characteristics (BJT) 1. Construct circuit of Fig. 4.1(a) , and repeat all steps as it is for both Figures. 2. Construct the circuit of Fig. 4.1(b) Vary the 1M potentiometer to set IB = 10 A as in Table 4.1. 3. Set the VCE to 2V by varying the 10k potentiometer as required by the first line of Table 4.1. 4. Record the VRC and VBE values in Table 4.1. 5. Vary the 10 k potentiometer to increase VCE from 2V to the values appearing in Table 4.1. (Note: IB should be maintained at 10 A for the range of VCE levels.) 6. Record VRC and VBE values for each of the measured VCE values. Use the mV IB range for VBE. 7. Repeat step 2 through 5 for all values of IB indicated in Table 4.1. 8. Compute the values of IC (from IC = VRC/RC) and IE (from IE = IB+IC). Use measured resistor value for RC. 9. Using the data of Table 4.1, plot the collector characteristics of the transistor on a graph paper. (Plot IC versus VCE for the various values of IB. Choose an appropriate scale for IC and label each IB curve).

Figure no. 4.1 (a)

chaacteritcs of bjt

2 0 V

A 1 M C R B B a s eC o

V C l l e

R c

C t o r

B + r

A 1 0 k C

= 1 k

B = 3 3 0 k

E m

i t t e

Figure no. .1 (b)

VRC (V) meas

IC (mA) (calc)

VBE (V) meas

IE (mA) (calc)

VCE (V) meas

Results and Calculations:

IB ( A)

10

30

----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

3. Table 4.1

Part A

50

8. Graph IC versus VCE for each value of IB (use graph paper). Part B : Common-Emitter DC Bias 1. Measure all resistor values (R1, R2, RC and RE) from circuit in Fig. 4.2 using DMM. 2. Calculate DC Bias values (VB, VE, VC and IE) and record them. 3. Calculate AC dynamic resistance, re. 4. Construct circuit as of Fig. 4.2 and set VCC = 10 V. 5. Measure the DC bias values (VB, VE, VC and IE) and record them. 6. Calculate IE using values obtained in Step 5. 7. Calculate re using the value of IE from Step 6. 8. Compare value of re obtained both from Step 3 & 7.
V C C = 1 0 V DC Supply

3 3 k R

3 k

V o
F c t o r
To Oscilloscope r Or DMM

1 F 2

a s e

1 5 u l l e

Function 1 5 u Generator
V s i g

E m

i t t e

1 0 k R

1 k

1 0 u

F C

Fig. 4.2

Part B 1. R1 (measured) = ____________, R2 (measured) = ___________, RC (measured) = ___________, RE (measured) = ___________

2. VB (calculated) = ___________, VE (calculated) = ___________ VC (calculated) = ___________, IE (calculated) = ___________ 3. re (calculated) = ___________

5. VB (measured) = ___________, VE (measured) = ___________ VC (measured) = ___________, 6. IE (calculated) using measured values of VE and RE = __________
I E = VE / RE

7. re (measured) = ____________, using IE from Step

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