Bipolar Junction Transistors (Outline)

Ø Transistor Structure
Ø Biasing of the Transistor
Ø Active Mode of Operation
Ø Current and Voltage Analysis
Ø Modes of Operation of the BJT
Ø Collector Characteristic Curves
Ø DC Load Line and DC Operating Point
Ø Transistor as a Switch
Ø Linear Operation of the Amplifier
Ø Non-Linear Amplifiers
Ø Voltage-Divider Bias
Ø Base Bias
Ø Emitter-Feedback Bias
Ø Collector-Feedback Bias
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 1
 Describe the basic structure of the BJT junction junction
❏
◆ Identify
B B ◆ Name
the symbols
◆ Identify for npn
the symbols (base)and pnp transistors
for npn and pnp transistors
p ◆ the three
Name the three
p B regionsn of aof a
regions B
◆ Explain
Emitter the differenceEmitter
between the structure of an npn(base)
and a pnp transistor Base-Emitter
Base-Emitter
BJTBJT and and
theirtheir
labels
labels n
◆ Identify
Base the symbols for npn and pnp transistors
Base ◆ Name
junction of a p
the threen regionsjunction
BJT and their labels
Collector Transistor Structure
Collector

Substrate
The The BJTBJT isSubstrate
is constructed
constructed withwith
threethree
doped semiconductor
doped semiconductor
E (emitter) regions separated
Eregions
(emitter) separated by
E two pn pn
by two
The
• (a) Bipolar Junction
Basic epitaxial planarjunctions,
Transistor
junctions,
structure
(a) Basic as shown
epitaxialasplanar
shown (BJT)
instructure
the is
in epitaxialformed
npn planar
the(b)epitaxial by
planar dopping
structure
structure
(b) npn
three
in Figure
in Figure semiconductor
4–1(a). (c)The
4–1(a). pnp three
The regions
regions
three regions(c) pnp
(emitter, base, andThe BJT is constructed with three doped semiconductor regions separated by two pn
are collector)
called
are called adjacent
emitter,
emitter, base, toand
base,each and other.
collector.
collector. Physical
Physicalrepresentations
representations of the
of thetwotwotypes of of
types
junctions,
! F I G U R as
EBJTsshown
4are
– 1 shownin the epitaxial planar structure in Figure 4–1(a). The three regions
• The emitter (E) is heavily
BJTs dopped,
are ! in
shown the
F I Figure
Gin
U E base
RFigure
44–1(b) (B)and
– 1 4–1(b) isand
thin(c).
(c). Oneand lightly
type
One
are called emitter, base, and collector. Physical representations of the two types of
dopped,
consists
type of two
consists and nthe
n regions
of two collector
regions separated (C)by
by
separated is
moderatelyBJTs Basic
dopped. a pconstruction.
BJT region
a p region (npn), and
(npn),
Basic the
BJTand other typetype
the other
construction. consists of two
consists of twop regions
p regionsseparated
separated by anby nanregion
n region
are shown
(pnp). in
The TheFigure
termterm 4–1(b)
bipolar and
refers (c). One
to the type consists of two n regions separated by
(pnp). bipolar refers to use of both
the use of bothholes andand
holes electrons
electronsas current
as current carriers in in
carriers
• Accordinga to the
p region dopping
Thethe
(npn),
pntransistor
junction
materials
and the other
structure.
joining
used,
type BJT can
consists of be
twoeither
p npn
regions or pnp.
separated by an n region
the transistor Thethe pn base
structure. region
junction and the
joining theemitter region
base region andis called the base-emitter
the emitter region is called the base-emi
• The term bipolar(pnp). The term bipolar
indicates that both
refers totypes
the useofofcarriers
both holes (electrons
and electrons and as holes)
current are present
carriers in in thisis called
junction. The pn junction junction. joining
The pn the junction
base region and the
joining the base
collector
region region
and theis called the region
collector
the transistor structure.
type of transistors.
base-collector junction, as indicatedjunction,
base-collector in Figureas4–1(b).
indicated A wire lead connects
inC Figure
C (collector) 4–1(b). Atowire
(collector) eachleadof the
connects
C C to each of
three regions, as shown. threeThese
regions, leads
as are labeled
shown. TheseE, B, andare
leads C for emitter,
labeled E, B,base,
and andC forcollec-
emitter, base, and col
tor, respectively. Thetor, base region is lightly
respectively. The base C
doped (collector)
and isvery
region thin doped
lightly compared to thethin
and very C
heavily
compared to the hea
Metalized contacts
R Y NHOI TS ET O R doped Y N emitter Metalized
O T E and thedoped contacts
moderately Oxide Oxide
emitterdopedand the collector
moderatelyregions.
doped (The reason regions.
collector for this is(The
discussed
reason for this is discus
Base-Collector
Base-Collector
was invented in 1947 was
The transistor ininvented
the next
Metalized insection.)
contacts
1947 Figure
inOxide
the next4–2 section.)
shows theFigure
schematic symbols
4–2 shows n nthefor the npn symbols
schematic and pnp bipolar
for the npnp and
p pnp bip
junction
junction
junction B B
cientists from Bell of scientists
by a team fromtransistors.
Bell junction transistors.
(base) n
(base)
pBase-Collector
p
p
B B n n
Emitter
Emitter Base-Emitter
Base-Emitter
William Shockley,
Laboratories. William Shockley, B njunction
n junction p p
n, and John Bardeen
" F I G U R E 4Base
– 2 Base " F I G U R E 4 – 2
(base)
pC Cjunction
C B n C
Walter Brattain, andEmitter
John Bardeen Base-Emitter
solid-state Standard
device the solid-state
developed BJT (bipolar
Collector
Basedevice Standard BJT (bipolar junctionn
junction
Collector junction p
the vacuum replaced thetransistor)
tube.
that vacuum tube. symbols. transistor) symbols.
Collector Substrate
Substrate B BB B
the NobelEach
prizereceived
in the Nobel prize in E (emitter)
E (emitter) E E
nsistor is arguably
1956. The the
(a) Basic epitaxial
transistor
(a) Basic planarplanar
isepitaxial
arguably
Substrate structure
the structure (b) npn
(b) npn (c) pnp
(c) pnp
E (emitter) E
nt inventionmostof significant
the invention of the
tury. Physical
(a) Basic epitaxial
twentieth century. Structure
! F I!
planar structureG UFIGURE
R E 4 – 1 4–1 (b) npn E
npn EE (c) pnp E
pnp
BasicBasic
BJT construction. (a) npn (b)
(a)pnp
npn (b) pnp
BJT construction.
© Dr. Ezzeldin FIGURE
Soliman4–1
! PHYS-2211: Bipolar Junction Transistors 2
Basic BJT construction.
The The
pn junction joining
pn junction the base
joining region
the base and and
region the emitter region
the emitter is called
region the the
is called base-emitter
base-emitter
 ◆ ◆ Discuss
Discuss thethe hole
hole andand electron
electron movement
movement
❏ Discuss
❏Discuss transistor
transistor currents
currents
◆ Calculate
◆ Calculate anyany
of of
thethe transistor
transistor currents
currents if the
if the other
other twotwo
areare known
known
Biasing of the Transistor
• Biasing an electronic device is to apply DC voltage across its terminals. This locates the point
of operation at a desired position on the I-V characteristic curves of the device.
Biasing
Biasing
• The BJT can be biased such that the base-emitter (BE) junction is forward-biased and the
Figure
Figure base-collector
4–34–3 shows
shows (BC)
a bias
a bias junction is revere-biased.
arrangement
arrangement forfor both
both This
npn way
and
and
npn ofpnp
pnp biasing
BJTs
BJTs puts
forfor the BJT in
asthe
operation
operation as active
an an
mode.
amplifier.
amplifier. Notice
Notice thatthat in both
in both cases
cases thethe base-emitter
base-emitter (BE)
(BE) junction
junction is forward-biased
is forward-biased andand
thethe
base-collector
base-collector (BC)
(BC) junction
junction is reverse-biased.
npnis reverse-biased. This
This condition
condition is called
is called forward-reverse
forward-reverse
pnp bias.
bias.

! F FU
!I G I GRU
BCBC reverse-
reverse- BCBC reverse-
reverse- Forwar
Forward-r
RC RC
biased
biased biased
biased
+ + – –
RB + + RB – –
– – + +
+ + VCC – – VCC
+ + – – + +
– – – – + +
VBB BEBE forward-
forward-
VBB BEBE forward-
forward-
– – + +
biased
biased biased
biased

© Dr. (a)
(a)Ezzeldin
npnnpn Soliman PHYS-2211: (b) (b)
pnppnpJunction Transistors
Bipolar 3
 Active Mode of Operation (1/3)
176 ◆ B IPOLAR J UNCTION T RANSISTORS BJT Circuit Pipelines Network
• Emitter ++++
electrons VCC
repel from Collector lead
(metallic)

the –ve
emitter and Electrons that
recombined

cross the FB with holes in COLLECTOR (n-type) IC

the base region
VBB
BE junction. BC junction depletion region

+
Base lead
} BASE ( p-type)
BE junction depletion region
SB SC
• Very small (metallic)
SE
fraction of
Minority EMITTER (n-type)
(hole)
current

these IB
electrons Emitter lead IC
IE
recombine (metallic)
+ VCC
with the few - +
IB
–

holes in the VBB –

• The emitter flow rate IE is split into IC and IB
IE

narrow base. according to the tubes’ cross-sections.

! FIGURE 4–4
• The ratio (IC / IB) equals (SC/SB), which is much
• The rest of BJT electrons cross the RB BC
operation showing electron flow. higher than 1, i.e. IC >> IB.
junction attracted toelectrons
When the the that +ve havecollector. Thethe crys-
• leave
recombined with holes as valence electrons ratio (SC/SB) is analogous to βDC of a BJT.
talline structure of the base, they become free electrons in the metallic base lead and pro-

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors

duce the external base current. Most of the free electrons that have entered the base do not
recombine with holes because the base is very thin. As the free electrons move toward the 4
reverse-biased BC junction, they are swept across into the collector region by the attraction
of the positive collector supply voltage. The free electrons move through the collector re-
gion, into the external circuit, and then return into the emitter region along with the base
 Active Mode of Operation (2/3)
• Depletion regions are depletion region
formed around both 0.7 eV
Before Biasing

junctions. Base
• The majority electron (p)
carriers in both Emitter Collector
emitter and collector (n) (n)
can’t “roll-up” the
energy hills.
• Emitter Current (IE1): − IE1 − IB1
electrons of the emitter are ≅ 0
now able to cross the BE. >> 0.7 eV
After Biasing

• Base Current (IB): small − IC

n p
fraction leaks through the −
narrow base, IB1. The few IE 2
holes in the base give rise n
to weak IB2 = IE2. IB 2 +
• Collector Current (IC): the rest of emitter electrons “roll-down”
the energy hill of the BC junction heading towards +ve collector.
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 5
 Active Mode of Operation (3/3)
• The emitter current (IE) equals the sum of the base (IB) and collector (IC) currents:
IE = I C + IB , where IE ≅ I C >> IB

• These currents are related to each other using βDC and αDC ratios:
β DC ≡ DC current gain of the transistor = I C I B (β DC ranges from 20 to 200), If IB and IC are the
input and output
I I I I β
α DC = C = C = C B = DC (α DC ranges from BJT
BJT
0.95
CC
BJTHC
to 0.99). CNSADNADNPDAPRcurrents, PARAM EETERETSRESR S◆ ◆ ◆177 177177
I E I C + I B (I C I B ) + 1 β DC + 1 HRA
A RAAC
HAC ETRETIRSEITRSIITCSISTCISA
RTAC
BJT BJT BJT CC HC AHR
BJTH
A A
R
AC R
AC
BJT
BJT TAC
CCT
E
A
HHE
R
CTI
AAR
ARM
E
S I
TR
RHAC
EATM
respectively,
SII
T
RAACCSITC
S
RTAC I
ETRC
S
A SNA NA
D N
D P DP
A
ETIRSEITSRITICSI C
P
A
R
S ISA
T the
CAA
R
A
N
SNA
MR
D A
AM
E
DN
M
TED
P E
P
ATERA
RTP
E ER
SR
RASA
A MRSM
◆◆◆
EAT
EMETERET
BJT acts as a BJT BJT
C H ACRHAC A RTAC E R ITSETRI C
I SST
Hence: I B : I C : I E = 1: β DC : (β DC + 1)
+++ Active ––– current amplifier.
+ + + + ++ – –– –––––
+++
ICICIC + ++ ++ + + + ICICIC – ––
–
IC IC IC
(β )
ICICIC DC
ICICIC + + (β
ICICIC DCI I I)
CI CI CI
CCC
–– –
– –
ICIICCICIC I IICI IIC
CCC ICIC IC
nnn CICICp p p
IBIBIB IBnIBInB n IBIBIB IC IpBICIpBIpB IC
I I I nnn IB IB IB IB IBIB pp p IBIBIB
+++ npn ppp B
+ + + ++
+B+ +B IBIBIB
p p p + p+p+
IBI–BI–B–
n n
nnn
– – –
– – – IBIBIB
nnn – – – I I
IBIB IB
p p pnp
IB IB
+ p +IB+ +IB I I
p Bp p B –– – nn n B––B–
Transistor n
n n
n n n (1) + +
n n In IEI
p p + + (1) ppp – –
p p pIEIEIE
n n – – Transistor
E E
n IE InE IE IEIEIE p IpEIEIE IEIE IE
IEIEIE IEIEIE IE
IE IE I
IE IE I
E– –I–
EIEIE(β DC + 1)– – –
IE I–E– –
E IEI (β+ +I ++I I1)
E DC E E E + +I+ I
––– +++ E E++ +
– –– – – + ++ + +
– –– ++ +
a)(a)
(a)
npn
npn npn (b)(b)
(b)
pnp
–pnp –pnp
© Dr. (a)
Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors + +
npn
(a) npn
(a) npn
(a)(a)
npnnpn
(a) npn
(b)(b)
pnppnp
(b) pnp
(b)(b)pnp
pnp
(b) pnp 6
IFGIFU
!F! GI G
U
RERE
U R4E–45–45– 5 (a) (a) npn
npn (b) pnp
(b) pnp
! ! F I!
G
F IUFGRGE!
U
I! RU4ER–E45–45– 5
F! IFGIFU
GI G
UE
R RE
U R4E–45–45– 5
Transistor
ransistor currents.
Transistor currents.
currents.
 Determine if the transistor is in saturation and explain how you did this

More About B DC
DC Current Gain (βDC)
• The DCThe
current
bDC orgain
hFE is function
is an of both
important the collector
BJT parameter current
that we need toand temperature:
examine further. bβ
DC f(IC, T).
DCis=not
truly constant but varies with both collector current and with temperature. Keeping the
• As IC is relatively
junction small, constant
temperature the increase in IC causes
and increasing increase
IC causes bDC to in βDC. On
increase to a the other A
maximum. hand, as IC
becomes relatively
further increaselarge, βDC is decreasing
in IC beyond this maximum with thecauses
point increase ofdecrease.
bDC to IC. If IC is held con-
stant and the temperature is varied, bDC changes directly with the temperature. If the tem-
• βDC increases monotonically
perature goes up, bDC goesand significantly
up and vice versa. with the
Figure increase
4–17 in the
shows the temperature
variation (T). This can
of bDC with
IC and junction
be attributed to more temperature (TJ) forpairs
electron-hole a typical BJT.
generation in the emitter region than in the base
region.
70

50 TJ = 125°C
Minimum current gain (βDC)

TJ = 75°C
TJ = 25°C
30
TJ = –15°C
20
TJ = –55°C

10

7.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, collector current (mA)

© Dr. Ezzeldin
! F I G Soliman
URE 4–17 PHYS-2211: Bipolar Junction Transistors 7
Variation of B DC with IC for several temperatures.
 BE: dc voltage at base with respect to emitter
VBE
CB: :dc
VVCB dcvoltage
voltageatatcollector
collectorwith
withrespect
respecttotobase
base
+V
! F I G!U R
Thevenizing
Thevenizing
Current and Voltage Analysis
F IEG5U–R1E3 5 – 1 3
thecircuit.
the bias bias circuit.
CE: :dc
VVCE dcvoltage +VCC CC
voltageatatcollector
collector withrespect
with respecttotoemitter
emitter

• Since BE junction is forward-biased:

R1 RC !!
R1 RC
VBE ≅ 0.7 V
RRCC ICIC Tr
Tra
R1 R1
• Applying Kirchhoff's voltage law on the base-emitter loop: VV
RRBB CBCB ++ ++
VB VB β ++
βDC+V +VCC
VBB − I BRB −VBE − I ERE = 0 ⇒ VBB − I BRB −VBE − (β DC + 1)I BRE = 0
–– DC VV CC
VVCC

KVL
Active ++ CE
CE CC
––
++ IBIB –– ––
I B = (VBB −VBE) (RB + RE + β DCRE) ≅ (VBB −VBE) (RB + β DCRE) VVBE
BE
βDC >>1 VVBB
BB
–R– 2 RKVL
2 RE IREIE R2

• Using the DC current gain of the transistor: I C = β DC I B

Active

• Applying Kirchhoff's current law on the transistor node: I E = I C(a)

+ I B ≅(a)
IC (b) (b)
Thebase-bias
The base-biasvoltage
voltagesource,
source,VVBB BB, , forward-biases
forward-biasesthe the
collector-bias
collector-bias
• Applying Kirchhoff's voltage law on the collector-emitter voltagesource,
loop:voltage source,VVCCCC, , reverse-biases
reverse-biasesthe thebase
bas
base-emitterjunction
VCC − I CRC −VCE − I ERE = 0 ⇒ VCE = VCC − Ibase-emitter junction isisThe
forward-biased,
forward-biased,
Thevenin ititisis
equivalent like
like aforward-
forward
abias
of the bias
C R C − I E RE ≅ VCC − I C (RThe
C + RThevenin
E) equivalent of the circui
forwardvoltage
forward voltagethe
I ≅I C E
drop
drop of
theofbeige
beige box inbox in Figure
Figure 5–13(c). 5–13(c).
ApplyingApply K
base-emitter
base-emitter loop gives
loop gives ! 0.7
• Applying Kirchhoff's voltage law on the transistor loop : VCE −VCB −VBE = 0 ⇒ VCB =V VVCEBE
BE −V! BE
0.7VV
V
-TH - V-R
© Dr. Ezzeldin Soliman Althoughininan
Although anactual
actualtransistor
transistorVV can
PHYS-2211: Bipolar Junction Transistors
BE
BE canbe beVas
8 as high
THhigh Vas
asTH0.9
R 0.9V
wewill
we willuse
use0.7
0.7Substituting,
VVthroughout
throughout this
Substituting,
this
using textin
using
text
Ohm’s inlaw,
Ohm’sorder
order totosolving
law,
and simplif
and solv
simplify
f
on 4–6 V CB ! V CE " V BE

Solved Problem
4–2 Determine IB, IC, IE, VBE, VCE, and VCB in the circuit of Figure 4–9. The transistor h
bDC = 150.
Problem (1): aDetermine IB, IC, IE, VBE, VCE, and VCB in the circuit shown below. The transistor has
a βDC = 150.
! FIGURE 4–9
VBE ≅ 0.7 V
VBB −VBE 5 − 0.7 RC 100 !
IB = = = 0.43 mA
RB 10 k
RB +
I C = β DC I B VCC
Active
10 k! – 10 V
= 150 × 0.43 m = 64.5 mA VBB
+
IE = I C + IB 5V –
= 64.5 m + 0.43 m = 64.93 mA ≅ I C
VCE = VCC − I CRC
= 10 − 64.5 m × 0.1 k = 3.55 V
VCB = VCE −VBE
Solution From Equation 4–3, VBE ! 0.7 V. Calculate the base, collector, and emitter current
= 3.55 − 0.7 2.85 V
as=follows:

© Dr. Ezzeldin Soliman VBB - VBE

PHYS-2211: 5 V - 0.7 V
Bipolar
IB = = Junction Transistors
= 430 MA 9
RB 10 kÆ
 Modes of Operation of the BJT
Active Mode (Current Amplifier) Reverse Active Mode (Curr. Amp.)

− n p p n −
n + + n

BE is FB, BC is RB, Large current can flow BE is RB, BC is FB, Moderate current can flow
Saturation Mode (Short Circuit) Cut-Off Mode (Open Circuit)

p p
− n n −
+ n
n +
BE is FB, BC is FB, little increase in
the very small | VCE | results in
significant increase in the current flow BE is RB, BC is RB, No current can flow

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 10

 + B
VBB
–

Collector Characteristic Curves (1/2)

(a) Circuit
• The figure besides is one member of the PD = ICVCE = PD(max)
IC I
collector characteristics family of curves. ×

B
IC ≠ βDC I
• It shows the relationship between IC and
VCE at certain constant value of IB: C
Ø VCE < 0.7 V (Saturation region): B
IC = βDC IB
In this region BE is FB emitting
electrons, while BC is FB collecting

DC IB
electrons (i.e. ERB). Any little increase in
VCE results in significant increase in IC,

IC ≠ β
which is the behavior of short circuit.

Ø 0.7 V < VCE < VCE(max) (Active region):

In this region BE is FB and BC is RB.
The increase in VCE results in widening
the BC depletion region, which keeps its A VCE
electric field the same. This leads to an 0 0.7 V VCE(max) 0
almost constant IC = βDCIB, i.e. current Saturation
Active region
Breakdown (c
region region
amplifier behavior. (b) IC versus VCE curve for one value of IB
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 11
! FIGURE 4–10
Collector characteristic curves.
 VBB
–

Collector Characteristic Curves (2/2)

(a) Circuit
Ø VCE > VCE(max) (Breakdown region): PD = PD(max)
IC
The BC depletion region can’t expand Active (FB, RB)
anymore, and the increase in VCE results IB6
in a corresponding increase in the BC
electric field and consequently
C IC. IB5

(FB, FB)
B

B)
Breakdown (FB, R
• By grouping a number of such curves IB4
drawn at different values of IB, the

Saturation
collector characteristic curves can be IB3

obtained, as shown besides.

IB2

• These curves are the relationship, based

IB1
on the device physical structure, between
IC and VCE, at different values of IB.
Cutoff region IB = 0
VCE VCE
0.7 V• When I B = 0 ⇒ I C ≅ 0 regardless
VCE(max) of the 0
uration value of VCE, i.e. open circuit Breakdown Cutoff
behavior. (c) Family of IC versus (RB, RB)
VCE curves for several values of IB
Active region
on
This defines the cutoff region,region
in which (IB1< IB2< IB3, etc.)
C versus VCE curve for one value of IB
both BE and BC are reverse-biased.
IGURE © 4 –Dr.
1 0 Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 12
ector characteristic curves.
 of point C in Figure 4–10(b). A transistor should never be op-
ion.
acteristic curves is produced when IC versus VCE is plotted for

Solved Problem BJT C

rated in Figure 4–10(c). When IB = 0, the transistor is in the
is a very small collector leakage current as indicated. Cutoff
HARACTERISTICS AND P ARAMETERS ◆
of a transistor. The amount of collector leakage current for
e graph for illustration.
Problem (2): Sketch an ideal family of
collector curves for the circuit shown
IC (mA)
below for IB = 5 µA to 25 µA in 5 µA
ector curves for the circuit in Figure 4–11 for IB = 5 mA to
increments. Assume β exceed
ssume bDC = 100 and that VCE does not DC
100 and
= breakdown.
2.5 IB = 25 µ A
that VCE does not exceed breakdown.
RC
2.0 IB = 20 µ A

IC
RB + 1.5 IB = 15 µ A
!DC = 100 VCC
+ –
VBB
IB 1.0 IB = 10 µ A
–
0.5 IB = 5 µ A

• To sketch the collector curves besides, VCE

0 0.7 V
bDCIB
the relation IC = βDCandIBtabulated
, values of I are calculated
is used.in Table 4–1.
C
ted in Figure 4–12.
• This relation holds in the active !region
FIGURE 4–12

ONLY.
IB IC
© Dr.
5 mA
Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 13
0.5 mA Related Problem Where would the curve for IB = 0 appear on the graph in Figure 4–12, neglecting
10 mA 1.0 mA
lector leakage current?
 IICC::dc
dccollector
collectorcurrent
current
RT H R
=T H
by the use of a load line. Figure 4–15withshows
respectatotodc load line draw
R1
BE: :dc
VVBE dcvoltage
voltageatatbase
base with respect emitter
emitter
connecting the cutoff point and the saturation point. The botto
VVCB ::dc
dcvoltage
voltageatatcollector
collectorwith
withrespect
respecttotobase
base
DC Load Line and Operating Point (1/4)
ideal cutoff where I = 0 and V = V . The top of the load li
CB
F I G U R E 5 – 1 3
C CE CC+ V
! F I G! + V
ICU = RE 5–13 CC
IC(sat) and VV VCE
CE
CE::dc=voltage
dc voltageatatcollector
VCE(sat) .collector
In betweenwithrespect
with
CC respect
cutofftotoemitter
emitter
and saturatio
Thevenizing the bias
Thevenizing the bias circuit. circuit.
the active region of the transistor’s operation. Load line operati
• The DC load line (LL) of a circuit is Chapter
a 5. R1 R1 RC RC FI
!! FIG

relationship between IC & VCE based on the RRCC ICIC

R1
Tran
Trans

structure of the collector-emitter (CE) loop: VCC (RC + RE ) VB

VCB ++ ++
RRBB VCB β β DC+VCC +V + +
R1
A
VB CC
–– DC VV
I C ≅ (V!CC F−V
I G U R) E (4R– 1+
CE C
5R )
E IC ++ CECE
– –
VVCC
CC
I E ≅I C ++ IBIB
VVBE –– ––
DC load line on a family of collector BE
LL (KVL of the CE Loop) VVBB
BB
–R– 2 R2 RE IREIE R2 R2
characteristic curves illustrating the Saturation
• T h e Bcutoff
J T and
m usaturation r a t e a l o n g IC(sat)
s t o p econditions. a
characteristic curve of certain IB, while the
(a) (b)
circuit must operate along the load line. Thebase-bias
(a)
base-biasvoltage
voltagesource,
source,VVBB
(b)
The BB, , forward-biases
forward-biasesthe theba
ba
The DC operating point (Q-point) should be collector-biasvoltage
collector-bias voltagesource,
source,
slopeVVCC , ,reverse-biases
CC= reverse-biases
− 1 RC + REthe( thebase-c
) base-c
the point of intersection. base-emitterjunction
base-emitter junction
TheisisThevenin
forward-biased,
forward-biased,
The Thevenin ititisis
equivalent
equivalent like
oflike aforward-bia
forward-bi
abias
theof the bias circ
circuit,
forwardvoltage
forward voltagethe
drop
drop ofbeige
of
the
beige box inbox in Figure
Figure 5–13(c). 5–13(c).
ApplyingApplyinKir
base-emitter
base-emitter loop gives
loop gives
• The cutoff point is the intersection of the VVBE BE ! ! 0.7
0.7VV
DC load line with IB = 0 curve (≈ horizontal V
-TH - V-RTH
Althoughininan
Although anactual
actualtransistor
transistorVV can canbe
BE
BE beVasas high
THhigh Vas
asTH0.9
R VBa
0.9VV
axis). At this point: wewill
we willuse
use0.7
0.7Substituting,
VVthroughout
throughout
Substituting, this
this
using textin
using
text
Ohm’s inlaw,
Ohm’sorder
order totosolving
law,
and simplify
and fortht
solvin
simplify
cepts.Keep
cepts. Keepininmind
mindthat thatthe
thecharacteristic
characteristic ofthe
of
QCutoff thebase-emitter
base-emitterj
IB(cutoff) = 0, I C(cutoff) = 0, Cutoff Point VTH = VTHIBR=THIB+RT
maldiode
mal diodecurve
curvelike
likethethe one
= 0ininFigure
IBone Figure2-12.
2-12.
Sincethe
Since theemitter
emitter isSubstituting
isatatground
Substituting ground
IE>b DC
(0 E>b
I(0 V),
V),
for
DC by
Iby for IB, VCE voltage
Kirchhoff’s
, Kirchhoff’s voltage
VCE(cutoff) = VCC (Open Circuit) 0 VCE(sat)
B
VCC
VVRRBB == VVVTH V
--TH
BB=
= I (RET
BEE E+ R
(R
IVEVBE
BB
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Then
Transistors
Then solving
solving for IEfor
, IE, 14
V TH
Equation
Equation 5–6 5–6 I !IE !
 DC Load Line and Operating Point (2/4)
• At the saturation point, several collector
characteristic curves, with IB ≥ IB(sat),

saturation
I B+
intersect with the DC load line. At this
point IC and VCE are fixed:
QApproximate
VCE = VCE(sat) ≅ 0 Saturation

Saturation Point
(Short Circuit)
Exact IB(sat)
I C = I C(sat) = (VCC −VCE(sat) ) (RC + RE) Q
Saturation
≅ VCC (RC + RE)
VCE(sat) ≅0

I B ≥ I B(sat) = I C(sat) β DC
I B+

active
Q
• The active region of operation, is the I C+ Active
region along the DC load line between
cutoff and saturation points:
I B ≤ I B(sat) = I C(sat) β DC
Active Region
I C = β DC I B
(Current Amplifier) Q
Cutoff
VCE ≅ VCC − I C (RC + RE) V −
CE

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 15

 DC Load Line and Operating Point (3/4)
• The table below summarizes the operation of the BJT in the three possible modes:

Attribute Cutoff Active Saturation

BE Junction RB FB FB

BC Junction RB RB FB

IB 0 ≤ I B(sat) = I C(sat) β DC ≥ I B(sat) = I C(sat) β DC

IC 0 β DC IB I C(sat) = LL
VCE =VCE(sat)

VCE LL LL VCE(sat) ≅ 0
I C =0 I C =βDCI B

Application Opened Switch Current Amplifier Closed Switch

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 16

 RC RC RC

IC IC IC

B
+
VCE
+

–
VCC
DC Load Line and Operating Point (4/4)
RB +
VCE
+

–
VCC
RB +
VCE
+

–
VCC
B – + IB – + IB –
VBB VBB
• We can control the location of the Q-point by varying– either (VBB or RB), RC, or VCC, as follows:
–

Varying VBB or RB (a) Circuit Varying RC (a) Circuit Varying VCC

+
IC IC
VCC (RC + RE ) VBB or RB− IC IC IC

IB6 IB6 IB6

IB5 C IB5 C IB5

B B
IB4
Current Amp. IB4 Current Amp. IB4

+I
IB3 IB3
VCC B3

IB2 IB2 IB2

IB1 IB1 IB1

Cutoff region IB = 0 RC+ Cutoff region IB = 0 Cutoff region IB = 0

A VCE A
VCE VCE VCE
VCE VCE
)
akdown
0 0 0.7 V
Saturation
V CC
(c) Family of IC versus VCE
VCE(max)
curves for several values of IBreakdown
0 0 0.7 V
Saturation
V VCE(max)
CC values of IBreakdown
(c) Family of IC versus VCE curves for several B
0
(c) Family of IC versus VCE curves for several values of IB
B
region Active region region region Active region region
on (IB1< IB2< IB3, etc.) (IB1< IB2< IB3, etc.) (IB1< IB2< IB3, etc.)
Ø Varying either VBB or RB Ø Varying RC results in shifting
(b) IC versus VCE curve for one value of IB (b) IC versus VCE curve for one value of IB
Ø Varying VCC results in
!
means varying IB, which shifts FIGURE
FIGURE 4–10
the Q-point
4–10
left and right
!
shifting the Q-point left and
Collector characteristic curves. Collector characteristic curves.
the Q-point up and down along the same right along the same
along the same load line. characteristic curve. characteristic curve.
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 17
 BJT Mode Determination and Q-Point Solution
Using IB Using IC Using VCE
• Calculate IC(sat) using the load • Calculate IC(sat) using the • Solve for I C assuming
line equation setting VCE = load line equation setting blindly that IC = βDC IB.
VCE(sat). VCE = VCE(sat). • Solve for VCE from the load
• Calculate IB(sat) = IC(sat)/βDC. • Solve for I C assuming line equation.
• Solve for IB provided that it blindly that IC = βDC IB. • Compare VCE with VCE(sat):
can be calculated without • Compare IC with IC(sat):
blind assumption.
• Compare IB with IB(sat):
IB < IB(sat) IB > IB(sat) IC < IC(sat) IC > IC(sat) VCE > VCE(sat) VCE < VCE(sat)
Ø BJT is Ø BJT is Ø BJT is Ø BJT is Ø BJT is active. Ø BJT is
active. saturated. active. saturated. Ø Accept the saturated.
Ø IC = βDC IB. Ø IC = IC(sat). Ø Accept the Ø IC = IC(sat). values of IC Ø IC = IC(sat).
Ø Get VCE from Ø VCE = VCE(sat). value of IC. Ø VCE = VCE(sat). and VCE. Ø VCE = VCE(sat).
the load line Ø Keep IB as it Ø Get VCE from Ø Solve for IB Ø I B = I C β DC . Ø Solve for IB
equation. is greater the load line which will be which will be
than IB(sat). equation. greater than greater than
Ø I B = I C β DC . IB(sat). IB(sat).
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 18
 Solved Problem
Determine whether or not the transistor in Figure 4–16 is in saturation. Assume
ProblemV(3): = 0.2 V.
Determine
CE(sat) whether or not the transistor in the circuit below is in saturation, and
calculate VCE and IC. Assume VCE(sat) = 0.3 V.
VCC F−V
IGURE 4–16
!
CE(sat) 10 − 0.3
I C(sat) = = = 9.7 mA
RC 1k RC 1.0 k!
I C(sat) 9.7 m
I B(sat) = = = 0.194 mA RB +
β DC 50 VCC
βDC = 50
10 V
V −V 3 − 0.7 + 10 k! –
I B = BB BE = = 0.23 mA VBB
RB 10 k 3V –
I B > I B(sat) ⇒ the BJT is in saturation
Hence: I C = I C(sat) = 9.7 mA, and VCE = VCE(sat) = 0.3 V

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 19

 VCE(2) - VCE(1) V 9.71
CE(2) -emitter,
VVas- 9.83
CE(1) V 9.71 V - 9
ccondition, there
base currentthis
thisthis is, ideally,
condition,
condition,
condition,there
therean
there
is, is, is,
open
ideally, between
ideally,
an
ideally,
%¢VCE = a an
open an collector
between
open
open and
between
between
%¢V emitter,
collector
collector
b 100%
CE = =
a as
collector
and indicated
and
emitter,
and
a emitter, by the
as indicated
indicated
as b b
100% by= the
indicated
100% by
a by
=thethe
! 1.22%
ch equivalent.
switch Inequivalent.
switch part
equivalent.
switch (b),Inthe
equivalent. In transistor
partIn part
(b),
part the
(b), is
(b), the V
intransistor
the
transistor
the saturation
transistor is
in in
is inis the
CE(1) region
thethe V
because
saturation
saturation region
saturation 9.83
the V
base-
region
because
region
CE(1) because
becausethe thethe
base- base-
base- 9.83 V
c emitter current
ter junction
emitter
cecollector
mademade
and
emitter
largeRelated
enough
current
the
emitter
junction
Problem
made
large
base-collector
junction
large
large
andand
junction
to enough
cause the
enough
and
the
Determine
enough causeto
the junction
base-collector
the
to collector the
cause
the
to Related
cause
Transistor as a Switch
are
base-collector
base-collector
current
Q-point
the
collector
the
forward-biased
junction
in
collector
collector
Problem
junction
junction
to current
reach
are are
Figure
current
current
Determine
are
5–18
to to
reach
and
forward-biased
ifreach
reach
the its
the base
forward-biased
forward-biased
itstosaturation value.
andcurrent
increases
itsits
the
and
inInFigure
this
saturation
saturation
Q-point
b DC saturation
and
value.
base
the
con-
isbase
the
tovalue.
300.
value.
base
current
if In
In this
5–18 In
current
is is is
current
this
bcon-
this con- to
con-
increases
DC
n, there is,
dition, ideally,
dition,
there
dition,
• The
dc voltage therearespect
there
is,
transistor
at base with
short
is, is,
ideally,
can between
ideally,
to aemitter
ideally,
work short
as aacollector
between
short
a short and
between
between
voltage emitter,
collector
controlled andas
collector
collector switch, indicated
and
emitter,
and emitter,
which by the
as as
asalternates
emitter, indicated switch
indicated
indicated byby
by the
between the
switch
the
two switch
switch
states:
valent.equivalent.
Actually,
open astate
equivalent.
the small
equivalent.
Actually, voltage
Actually,
Actually, a small
(cutoff) adrop
a small
and small across
voltage
the the
voltage
drop
voltage
closed transister
drop
across
drop
state across of
the the
across
(saturation). up
the to a of
transister
transister few
transister oftenths
up of
upup
to of
to
atofew atenths
a few few tenths
tenthsof aof of
a a
dc voltage
normally atnormally
voltvoltcollector
occurs,
volt
normallywithoccurs,
which
normally
occurs,respect
is the
which towhich
which base
saturation
occurs, is the voltage,
is the saturation
saturation
is the VBase
saturation voltage,.voltage,
voltage, VCE(sat) . . .
VCE(sat)
VCE(sat)
Base Bias
Open State (Cutoff)
CE(sat) Bias Closed State (Saturation)
dc voltage at collector with respect to emitter
+ VCC +VCCThis method
+++ VCC
VVCC V+
+CC ofVCC
CC
biasing
+Vis
+VCC +
CC
common
VThis
CC
in+switching
method Vof
CC biasing+circuits.
Vis
CC VV+VCCFigure
++common
CC
CC
in 5–19
!+V
CC F+ Gshows
+Vswitching
IV
CC CC
!4a–F2base-
U R Ecircuits. FUIRF
I 3G!
! G
transistor. The analysis of transistor.
this circuitThe
for analysis
the linearofregion showsfor
this circuit that
theitlinear
Switchingis action
directly
region
ofSw
Switching
Switc
d
an
! FIGURE 4–8
ent on b DC. Starting with ent Kirchhoff’s voltage law
on b DC. Starting witharound the base
Kirchhoff’s circuit,
voltage law around
ICIC= 0RC RC IRR
RRCC =I0 =I 0Transistor
= 0 RC RCcurrents
RC and
RC voltages.
IC(sat) IC(sat)
RC RRCCRCIC(sat)IC(sat)
IC(sat) IC(sat)
RC RC RCIC(sat)IC(sat)
RC CCRCC C C VCC - VRB - VBE = 0 VCC - VRB - VBE = 0
+ R RB CB V + +
RB
B –
RB
B RB RB
RSubstituting C++I R for CV C,Substituting
C RBget
you IBRR B RB VR , you
B BRfor C get C C C
V B
V B R B + + + +
B
VCE VCE
+0V 0V+
0 V0 V CE + –
CC
+VBB +VBB+V+BBVBB
+ I V - I R - VBE = 0 VCC - IBRB - VBE = 0
VBE – – IB = B0 VBE I–B =– I0B =IVB0BE
= 0– E– E E E IB CC – IBB IB B IB – – –
E E E E
VBB
–
Then
IE solving for IB, Then solving for IB,
VCC - VBE VCC - VBE
IB = IB =
5 – 1 9 (a) Cutoff — open
! (a) Uswitch
(a)
F I Cutoff
G(a) E—
Cutoff
R Cutoff
1—9 —
5 –open open
switch
open switch (b) Saturation(b)
switch —Saturation
closed
(b) (b) switch
Saturation —R—
— closed
Saturation closed
B switch
closed switch
switch RB
• IB = IB(cutoff) = 0 • IB > IB(sat)
Base bias. Kirchhoff’s voltage law applied Kirchhoff’saround voltage law applied
the collector around
circuit in Figurethe collector circt
5–19 gives
ditions
base-bias •in
I CCutoff
= I C(cutoff)
Conditions
Conditions
Conditions
voltage inAs
source, ≅inV0mentioned
Cutoffin ,Cutoff
Cutoff
lowing As before,
As
mentioned
As
equation:
forward-biases aI Ctransistor
mentioned
mentioned
•the before, a is
before,
= 0before,
lowing Vequation:
•ain athe
transistor
base-emitter VCE(sat)
= cutoff
transistor
transistor
junction, isand ≅ 0in
inisregion
is
the
in
the when
the
cutoff
the the
cutoff
region
cutoff region
regionwhen
• Vwhenwhen
the thethe
CE = 0
BB CE
-emitter
r-bias •junction
base-emitter
base-emitter
voltage
V isjunction
base-emitter
source,
= V not
VCC forward-biased.
,≅junction
junction is not
reverse-biases
V is not Neglecting
forward-biased.
forward-biased.
is not forward-biased.
the • leakage
Neglecting
base-collector
V = V Neglecting
junction.
• VI current,
Neglecting
= leakage
I
- When
I R ≅allVcurrent,
leakage
leakage ofVcurrent,
the
- the
R currents
current,
all0of
= all
V all
of of
the -the the
currents
I currents
currents
R - V = 0
zero, and
CE
is
CE(cutoff)
equal to
CC CE CC C
CC C(sat)
C C CC CEC CC • I CC = V
C CC R CE
C
are V
are
itter junction are
zero, zero,
and
iszero,
CE Vand
and Vis
forward-biased,
CE VVCC
CE isit. equal
equal
CE isis equal
to
likeVto
aCCto
V. CC . .
VCC
forward-biased diode and has a nominal
Solving for VCE, Solving for VCE,
voltage©drop
Dr. Ezzeldin
of Soliman PHYS-2211: Bipolar Junction Transistors 20
quation 5–10 V
Equation CE(cutoff) 5–10 V ! V V V
CC
CE(cutoff) ! V!
CE(cutoff) CC
CE(cutoff) ! V
V CE V
CCCC" V CC ! ICR C V CE " V CC ! ICR C Equation
VBE ! 0.7 V Equation 4–3
 Solved Problem
OL AR J UNCTION T RANSISTORS
Problem (4): For the transistor circuit shown below: (a) what is VOUT when VIN = 0?, (b) what
minimum value of IB is required to saturate this transistor if βDC is 200?, (c) calculate the
maximum value of RB required to saturate the transistor when VIN = 5V, and solve for VOUT.
! FIGURE 4–24
(a) VIN = 0 ⇒ VBE = 0 ⇒ BE is reverse-biased ⇒ VCC
+10 V
BJT is in cutoff ⇒ VOUT = VCE = VCE(cutoff) = VCC = 10 V
VCC −VCE(sat) 10 − 0 RC 1.0 k!
(b) I C(sat) = ≅ = 10 mA
RC 1k
VOUT
I C(sat) 10 mA RB
I B(min) = I B(sat) = = = 50 µA
β DC 200 VIN
VIN −VBE
(c) RB =
IB
VIN −VBE VIN −VBE 5 − 0.7
RB(max) = = = = 86 kΩ
I B(min) I B(sat) 50 µ
Solution (a) When VIN = 0 V, the transistor is in cutoff (acts like an open switch) an
VOUT = VCE(sat) = 0
VCE = VCC = 10 V
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 21
(b) Since VCE(sat) is neglected (assumed to be 0 V),
 BJT Circuits with DC and AC Sources (1/3)
• If both types of sources (DC and AC) are present in a BJT circuit, all currents and voltages of
this circuit are composed of DC (flat) part and AC (sinusoidal) part:
!DC !
AC !DC !AC

base-to-emitter voltage = VBE +Vbe , collector-to-emitter voltage = VCE +Vce

! AC
DC ! ! AC
DC !
base current = I B + I b , collector current = I C + I c
base voltage
Vbe
VBE

collector voltage t
collector voltage
base voltage

VCE
Vce
t
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 22
 voltage applied.

BJT Circuits with DC and AC Sources (2/3)

• The BJT circuit besides can be split into DC and AC
sub-circuits by applying the superposition thoery. RC 220 !

RB
• In the DC sub-circuit, the AC source Vin is replaced +
VCC
by a s.c., while the DC sources VBB and VCC are kept. – 10 V
10 k!
The solution of this circuit is the DC operating point
(Q-point) : Vin
βDC = 100
I C(sat) = (VCC −VCE(sat) ) RC
+
≅ 10 220 = 45.45 mA VBB 3.7 V
–
I B(sat) = I C(sat) β DC = 45.45 m 100 = 454.5 µA
I BQ = (VBB −VBE) RB = (3.7 − 0.7) 10 k = 300 µA < I B(sat)
VBB – 0.7 V 3.7 V – 0.7 V
I CQ = β DC I BQ = 100 × 300 µ = 30 mA IBQ = = = 300 µ A
RB 10 k!
VCEQ = VCC − I CQ RC = 10 − 30 m × 220 = 3.4 V ICQ = βDC IBQ = (100)(300 µ A) = 30 mA

• In the AC sub-circuit, VBB and VCC are replaced by s.c., while VVCEQ = VCC – IKnowing
in is kept. CQ RC = 10 the Ib input
V – (30 mA)(220 !) =
waveform the corresponding Ic and Vce output waveforms can be obtained graphically.
! FIGURE 5–5
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 23
Variations in collector curre
 BJT Circuits with DC and AC Sources (3/3)
• In the figure
besides, we
solve graphically
for Ic and Vce
waveforms,
knowing the
applied input A
A
current Ib
waveform.

• The Q-point can B B

be considered as
the center of the
range of
variation of the
transistor’s A
currents and
B
voltages.
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 24
 Linear Operation of the Amplifier
• The location of the Q-point together
with the amplitude of the input Ib
waveform determine the mode of
operation of the transistor amplifier.
projection of Ib on
• If the Q-point is close to the center of the DC load line
the DC load line, and the amplitude of
Ib is sufficiently small, the amplifier
works in the linear mode.

• In this mode, the projection of Ib on the

DC load line, lies entirely within the
active region of the load line, and
c o n s e q u e n t l y b o t h Ic a n d Vce
waveforms are non-distorted.

• High quality amplifiers always operate

in the linear mode.
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 25
 Non-Linear Amplifiers (1/2)
Transistor is Driven into Saturation Transistor is Driven into Cutoff

• Q-point is close to saturation ⇒ the • Q-point is close to cutoff ⇒ the projection of

projection of the +ve peak of Ib on the DC load the -ve peak of Ib on the DC load line lies
line lies outside the active region ⇒ Ic and Vce outside the active region ⇒ Ic and Vce
waveforms are one-side distorted. waveforms are one-side distorted.
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 26
 Non-Linear Amplifiers (2/2)
Transistor is Driven into both Saturation and Cutoff

• Amplitude of Ib is relatively large ⇒ the projections of both the +ve and -ve peaks of Ib on the
DC load line lie outside the active region ⇒ Ic and Vce waveforms are double-sides distorted.

• Waveform distortion, i.e. non-linear operation, is undesired for high quality amplifiers.
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 27
 Max. Sinusoidal Amplitudes for Linear Operation
IC
Max. Span of Note: Ib waveform
IB(sat)
I C(sat) AC Oscillations never saturates, while
towards Ic & Vce waveforms

IB(sat)-IBQ
may saturate.
IC(sat)-ICQ

Cutoff

smaller
I c(maxpeak )
smaller

I c(maxpeak ) ⇐ ⇒ I b(maxpeak ) =
Q I BQ β DC
I CQ

IBQ
ICQ

0 V 0
CE(sat) VCEQ VCE(cutoff) VCE
If the Q-point is at the middle of
VCEQ VCE(cutoff) the load line, the maximum
-VCE(sat) -VCEQ sinusoidal amplitudes go to
their greatest possible values:
smaller I b(maxpeak ) = I B(sat) 2, I c(maxpeak ) = I C(sat) 2
⇓ max
max
Vce( Vce( peak ) ≅ VCE(cutoff) 2
peak )

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 28

 Solved Problem
234 ◆ T RANSISTOR B IAS C IRCUITS

Problem (5): Determine the Q-point for the circuit below. Find the maximum peak value of
collector and base current waveforms for linear operation. Assume βDC = 200 and VCE(sat) = 0.
! FIGURE 5–7
VCC −VCE(sat) 20 − 0
I C(sat) = = = 60.6 mA RC
RC 330 330 !
RB +
I B(sat) = I C(sat) β DC = 60.6 m 200 = 303 µA VCC
– 20 V
+ 47 k!
I B = (VBB −VBE) RB = (10 − 0.7) 47 k = 198 µA < I B(sat) VBB
10 V –
I C = β DC I B = 200 ×198 µ = 39.6 mA
VCE = VCC − I CRC
= 20 − 39.6 m × 330 = 6.93TheV Q-point is at IC = 39.6 mA and at VCE = 6.93 V.
Since
Q-point: VCE = 6.93 V, I C = 39.6 mA, andIC(cutoff ) = µA
I B = 198 0, you need to know IC(sat) to determine how much variation in
collector current can occur and still maintain linear operation of the transistor.
max
I c( peak ) = (I C(sat) − I CQ ) or (I CQ − I C(cutoff) )
VCC 20 V
IC(sat) = = = 60.6 mA
= (60.6 − 39.6) or (39.6 − 0) = 21 mA RC 330 Æ
select the smaller

I b(maxpeak ) = I c(maxpeak ) β DC = 21 m 200 =The

105dcµA
load line is graphically illustrated in Figure 5–8, showing that before satura-
tion is reached, IC can increase an amount ideally equal to
© Dr. Ezzeldin Soliman PHYS-2211:
IC(sat)Bipolar
- ICQ =Junction
60.6 mA Transistors
- 39.6 mA = 21.0 mA 29
However, IC can decrease by 39.6 mA before cutoff (IC = 0) is reached. Therefore,
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! FIGURE CE: dc5–13
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! FIGURE voltage VCE
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Voltage-Divider Bias (2/2)
!
Thevenizing the bias
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?
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R2 E R
• A DC bias circuit is said to be stable, if under certain
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(a) (a) (b) (b)
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V BB , source,
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V ,
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 Once you know VC and VE, you can determine VCE.
VCE = VC - VE
236 ◆ T RANSISTOR B IAS C IRCUITS Solved Problem (1/2)
EXAMPLE
Problem 5–2
(6): Determine Determine
VCE, IC, I1, and CE and IC in the
I2 in theVvoltage-divider stiff voltage-divider
biased transistor circuitbiased
showntransisto
below if βDC = 100. Knowing thatOnce ifVb DCyou
CE(sat)
= know
100.V, is
= 0.2 andtransistor
VCthis VE, you can determine V
in saturation? CE. the
Check
stability of the circuit.
! FIGURE 5–10
VCE = VC - VE
⎛ R2 ⎞ ⎛ 5.6 k ⎞ VCC
VTH = ⎜ ⎟ VCC = ⎜ ⎟ ×10 = 3.59 V +10 V
⎝ R1 + R 2 ⎠ ⎝10 k + 5.6 k ⎠
EXAMPLE 5–2 Determine VCE and IC in the stiff voltage-divider biased transistor
R1R 2 10 k × 5.6 k
R TH = R1 R 2 = = = 3.59 kΩ = 100.
if b DC
R1 + R 2 10 k + 5.6 k R1 RC
10 k! 1.0 k!
VTH −VBE 3.59 − 0.7 ! FIGURE 5–10
IC ≅ = = 2.79 mA VCC
RE + R TH β DC 1 k + 3.59 k 100
+10 V
RE 1k
SQ = = = 27.86 > 10 ⇒ stable
R TH β DC 3.59 k 100
RR12 RRCE
VCE ≅ VCC − I C (RC + RE) 5.6k!
10 k! 560k!
1.0

= 10 − 2.79 m × (1 k + 1 k)
= 4.42 V > VCE(sat) ⇒ not saturated

© Dr. Ezzeldin Soliman Solution The base voltage

PHYS-2211: is Junction TransistorsR2
Bipolar RE 32
5.6 k! 560 !
R2 5.6 kÆ
 EXAMPLE 5–2 Determine VCE and IC in the stiff voltage-divider biased transistor
Solved Problem (2/2)
Once
if b DCyou
= know
100. VC and VE, you can determine VCE.
VCE = VC - VE
! FIGURE 5–10
VB = I ERE +VBE VCC
≅ I CRE +VBE +10 V
EXAMPLE 5–2 Determine VCE and IC in the stiff voltage-divider biased transistor c
= 2.79 m ×1 k + 0.7 = 3.49 V
if b DC = 100.
VCC −VB I1
R1 RC
I1 = 10 k! 1.0 k!
R1 ! FIGURE 5–10
VCC
10 − 3.49 +10 V
= = 0.651 mA
10 k
V 3.49
I2 = B = = 0.623 mA RR12 RRCE
R 2 5.6 k I2 10 560k!
5.6k!
k! 1.0 !
Note: I B = I 1 − I 2 = (0.651− 0.623) m = 28 µA
I C 2.79 m
= = = 28 µA
β DC 100
Solution The base voltage is R2 RE
5.6 k! 560 !
R2 5.6 kÆ
VB ! a bVCC = a b10 V = 3.
R1 + R2 15.6 kÆ
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 33
So,
 VBE: dc voltage at base with respect to emitter
VCB: dc voltage at collector with respect to base
Base Bias Base B
VCE: dc voltage at collector with respect to emitter
• This bias method has the advantage of circuit simplicity: + VCC + VCC This m
KVL BE: VCC = VBE + I BRB transist
! F
I ent on b
? V + C
RB Tra
= BE
Active
ICRC RIC RC
β DC C
V + + ++
V −V RRBB CB +RB
I C = β DC CC BE – Substitu
RB + VVCE
CE VVCE
CC
+ + –
+ I
IB B V VBE–– –– V – –
KVL CE: VCC = VCE + I CRC ⇒ VCE = VCC − I CRC BE BE
VBB
– IE Then so
• It is clear that the dependence of IC, and consequently VCE, on βDC
is unavoidable. Hence the base bias circuit is always unstable.
– 1F9I G U R E 5 – 1 9
! F I G U R E 5!
Due to the absence of a common resistance in the BE and CE
loops, there is no –ve feedback mechanism: I C ↑⇒IBase bias. Base bias. Kirchho
C R C ↑ ⇒ VCE ↓
The base-bias KVL CE
voltage source, VBB, forward-biases lowing
the b
collector-bias
• Due to variation of βDC with temperature, voltage
the Q-point of source,
this circuit VCC
shifts up, reverse-biases
along the DC load the base
line from the desired location towardsbase-emitter junction
salutation. Hence, is bias
this forward-biased, it is like a forward-b
method is preferable/non-
preferable for biasing switches/amplifiers.
Solving
forward voltage drop of
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Equation Equation 5–1034
5–10
Transistors VBE ! 0.7 V
Substitu
large spread of b DC values from one transistor to another of the same type due to manu-
facturing variations. For these reasons, base bias is rarely used in linear circuits but is dis-
cussed here so you will be familiar with it.
Solved Problem
EXAMPLE 5–8 Determine how much the Q-point (I , V ) for the circuit in Figur
C CE
Problem (7): Determine how much the Q-point (IC, VCE) for the circuit below will change over a
over a temperature range where b DC from 0.7 Vfrom
temperature range where βDC increases from 85 to 100 and VBE decreases
increases 100 to 200.
to 0.6 V.
! FIGURE 5–20
(1) For β DC = 85 and VBE = 0.7 V: VCC
+12 V
⎛V −V ⎞ ⎛12 − 0.7 ⎞
I C(1) = β DC ⎜ CC BE ⎟ = 85 ⎜ ⎟ = 9.61 mA
⎝ RB ⎠ ⎝ 100 k ⎠
VCE(1) = VCC − I CRC = 12 − 9.61 m × 560 = 6.62 V > 0 ⇒ active RC
560 !
(2) For β DC = 100 and VBE = 0.6 V: RB
⎛V −V ⎞ ⎛12 − 0.6 ⎞
I C( 2) = β DC ⎜ CC BE ⎟ = 100 ⎜ ⎟ = 11.4 mA
⎝ RB ⎠ ⎝ 100 k ⎠ 100
330 k!
VCE( 2) = VCC − I CRC = 12 − 11.4 m × 560 = 5.62 V > 0 ⇒ active
I C( 2) − I C(1) 11.4 m − 9.61 m
%ΔI C = ×100% = ×100% = 18.6%
I C(1) 9.61 m Since %ΔI C and %ΔVCE > 10%,
VCE( 2) −VCE(1) Solution 5.62For b DC = 100,
− 6.62 Q-point shifts up significantly along the LL.
%ΔVCE = ×100% = ×100% = −15.1%
VCE(1) 6.62 Hence, this circuit is thermally unstable.
VCC - VBE 12 V - 0.7 V
IC(1) = b DC a b = 100a b
© Dr. Ezzeldin Soliman PHYS-2211: Bipolar JunctionRBTransistors 35
330 kÆ
VCE(1) = VCC - IC(1)RC = 12 V - (3.42 mA)(560 Æ)
 VBE: dc voltage at base with respect to emitter and V
VCB: dc voltage at collector
Emitter-Feedback Bias with respect to base
• RE is common in the BE and CE loops. It causes
VCE: dc voltage at collector with respect to emitter
–ve feedback,
VCC + VCC Emit
which prevents significant change in IC due to little change in βDC:
I C ↑ ⇒ I ERE ↑ ⇒ I BRB ↓⇒ I B ↓ ⇒ I C ↓ ! F
I E ≅I C KVL BE I C =βDCI B If an e
I R I feedba
Tra
• The Q-point of this circuit can be obtained as follows: C C R CC RC dictab
KVL BE: VCC − I BRB −VBE − I ERE = 0 ⇒ ?
Active RBRB VCB + ++R ++ with a
B
IC – ter vol
VCC − RB −VBE − I CRE ≅ 0 ++ VVCE
CE VVCE
CC
β DC I ≅I
I V + – crease
E C
I
+ BB V – –
BE - -
VCC −VBE BE VBE – – keepin
IC ≅ VBB IE RE
RE + (RB β DC) – IE rent tr
KVL CE: VCC − I CRC −VCE − I ERE = 0 ⇒ VCE ≅ VCC − I C (RE + RC) pende
I ≅I E C
write K
! FIGURE 5–21
! FIGURE 5–19
• This circuit can be made thermally stable as follows:
Emitter-feedback bias.
VCC −VBE RBase ⎧bias.
> 10 : Stable
IC ≅ ≠ f (β DC) ⇒ SQ ≡ thermal stability factor = E
⎨
RE ≥10RB βDC
RE The base-bias voltage RB βsource, , forward-biases
V Unstable
DC ⎩ < 10 :BB
the b
Substi
© Dr. Ezzeldin Soliman
collector-bias voltage source, VCC,
PHYS-2211: Bipolar Junction Transistors
reverse-biases 36
the base
base-emitter junctionEquation
is forward-biased,
5–12 it is like a forward-b
ee spread
spread of DC values from one transistor to another of the same type due to manu-
of bbDC
uring
uring variations.
variations. For these reasons, base bias is rarely used in linear circuits but is dis-
ed
ed here
here so
so you
you will
will be familiar with it.
Solved Problem
EXAMPLE
EXAMPLE 5–8
5–8
Problem Determine
(8): Solve for the Q-point how
of the biasmuch theshown
circuit Q-point (ICand
below , VCEcheck
) for its
thestability.
circuit in
If Figure
unstable, what should youoverdo ina temperature
order to bringrange
the circuit
wheretob DC
stability without
increases from driving the200.
100 to
transistor into saturation?
! FIGURE
! FIGURE 5–20
V −V 12 − 0.7 VCC
I C ≅ CC BE = = 5.65 mA
RE + RB β DC 1 k + (100 k 100) +V12CCV E
VCE ≅ VCC − I C (RE + RC) = 12 − 5.65 m × (1 k + 560) = 3.186 V > 0 ⇒ active I
RE 1k RC f
SQ = = 1< 10 ⇒ unstable RC
= 560 ! d
RB β DC 100 k 100 RRBB w
SQ = 10 : REʹ = 10 kΩ SQ = 10 : RBʹʹ = 10 kΩ βDC = 100 t
11.3 11.3 100 k
330 kΩ
!
c
I Cʹ ≅ = 1.027 mA I Cʹʹ ≅ = 10.272 mA
10 k + (100 k 100) 1 k + (10 k 100) RE k
VCE
ʹ ≅ 12 − 1.027 m × (10 k + 0.56 k) VCE
ʹʹ ≅ 12 − 10.272 m × (1 k + 0.56 k)
1kΩ r
p
= 1.152 V ⇒ marginally active = −4.025 V ⇒ saturated w
Solution DC =saturating
For without 100,
b DC ! FIGURE 5–21
Hence, to stabilize this circuit the BJT, RE should be increased to 10 kΩ.
Emitter-feedback bias.
© Dr. Ezzeldin Soliman CC - VTransistors
PHYS-2211: BipolarVJunction BE 12 V - 0.7
37 V
C(1) = b DC a
IC(1) b = 100a b =S
RB 330 kÆ
 OTHER B IAS METHODS ◆ 24
Collector-Feedback Bias
• RC is common in the BE and CE loops. It causes –ve feedback, which
prevents significant change in IC due to little change in βDC: +VCC
I C ↑⇒ I CRC ↑ ⇒ I BRB ↓⇒ I B ↓ ⇒ I C ↓
s connected to theKVL collector
BE
rather
I =β I
than to VCC, as it
C DC B

IC + I B RC
ussed•earlier. The(ICcollector
The Q-point , VCE) can bevoltage
obtained provides
as follows: the bias
? IC RB VC
egative KVL
feedback
BE: VCC =creates
VBE + I BRB an
+ (I C“offsetting”
+ I B )RC ≅ VBE + effect
RB + that
I CR C
!"# Active β DC
C tries to increase, it drops more ≅I C
voltage across RC,
IB
IC
+
n VC decreases, there VCCis
−VaBE decrease in voltage across
in IB producesI Cless
≅
RCI+C(Rwhich,
B β DC )
in turn, drops less volt- ++ VCE
VVBE --
rease in VC. BE –

KVL CE: VCC = VCE + (I C + I B )RC ⇒ VCE ≅ VCC − I CRC

ias Circuit By Ohm’s law, the base current can be
I C +I B ≅I C

• This circuit can be made thermally stable as follows:

! FIGURE 5–22

VCI - VBE ≅ VCC −VBE ≠ f β Collector-feedback bias.

RC ⎧ > 10 : stable
= C R ≥10R β ( DC ) ⇒ SQ ≡ thermal stability factor = ⎨
B RC RB β DC ⎩ < 10 : unstable
RBC B DC

© Dr. Ezzeldin Soliman PHYS-2211: Bipolar Junction Transistors 38

ector voltage is
 ◆ T RANSISTOR B IAS C IRCUITS
Solved Problem
Problem
EXAMPLE (9): Calculate the Q-point
5–10 values
Calculate the(IQ-point
C and VCEvalues
) for the(Icircuit shown below, and check its
C and VCE) for the circuit in Figure 5–
thermal stability. Is the BJT of this circuit driven into saturation? Assume VCE(sat) = 0.2 V.
! FIGURE 5–23
V −V VCC
I C ≅ CC BE
RC + RB β DC +10 V
10 − 0.7
= = 0.853 mA RC
10 k + 90 k 100 10 k!
RB
RC 10 k
SQ = = = 11.11⇒ stable
RB β DC 90 k 100 90 k!
180
VCC −VCE(sat) 10 − 0.2 βDC = 100
+
I C(sat) ≅ = = 0.98 mA
RC 10 k 0.7 V –

I C < I C(sat) ⇒ BJT is not driven into saturation but close to it.
VCE ≅ VCC − I CRC
= 10 − 0.853Solution
m ×10 k Using Equation 5–13, the collector current is
= 1.47 V
VCC - VBE 10 V - 0.7 V
© Dr. Ezzeldin Soliman IC = Bipolar Junction =
PHYS-2211: = 788
RC + RB>b DC Transistors
10 kÆ + 180 kÆ>10039