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Etching Techniques for Metal Films

The document describes various wet and dry etchants for removing thin films and dielectrics. Wet etchants include aqueous solutions that remove materials like silicon dioxide, silicon nitride, aluminum, gold, titanium, tungsten, and chromium at rates from 2-660 nm/min. Dry etching uses plasma gases like CHF3, SF6, Cl2, and O2 that etch materials like silicon dioxide, silicon nitride, aluminum, titanium, tungsten, and chromium at rates from 5-500 nm/min. The document also discusses liquid and gas phase etchants for silicon with techniques like HF, KOH, EDP, and TMAH wet etching and SF6/C4

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hrishikeshdeka18
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Download as PDF, TXT or read online on Scribd

Topics covered

  • etching troubleshooting,
  • aluminium etching,
  • deposition cycle,
  • etching in microfabrication,
  • selectivity,
  • etching optimization,
  • etching applications,
  • etching applications in electr…,
  • sidewall angle,
  • etching techniques
45 views47 pages

Etching Techniques for Metal Films

The document describes various wet and dry etchants for removing thin films and dielectrics. Wet etchants include aqueous solutions that remove materials like silicon dioxide, silicon nitride, aluminum, gold, titanium, tungsten, and chromium at rates from 2-660 nm/min. Dry etching uses plasma gases like CHF3, SF6, Cl2, and O2 that etch materials like silicon dioxide, silicon nitride, aluminum, titanium, tungsten, and chromium at rates from 5-500 nm/min. The document also discusses liquid and gas phase etchants for silicon with techniques like HF, KOH, EDP, and TMAH wet etching and SF6/C4

Uploaded by

hrishikeshdeka18
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Topics covered

  • etching troubleshooting,
  • aluminium etching,
  • deposition cycle,
  • etching in microfabrication,
  • selectivity,
  • etching optimization,
  • etching applications,
  • etching applications in electr…,
  • sidewall angle,
  • etching techniques

Wet and Dry Etchants of Thin Metal Films and Dielectric Insulators.

Adapted from Williams and Muller [3].


Wet Etchants Etch Rate Dry Etching
(acqueous solutions) (nm/min) Gases (Plasma Etch Rate
phase) (nm/min)
Silicon HF 20-2.000 CHF3+O2 50-150
Dioxide
HF:NH4F(buffered HF) 100-500 CHF3+CF4 250-500

Silicon H3PO4 5 SF6 150-250


Nitride
CHF3+CF4 100-150
Aluminium H3PO4:HNO3:CH3COOH 660 Cl2+SiCl4 100-150
HF 5 CHCl3+BCl3 200-600

Gold KI 40

Titanium HF:H2O2 800 SF6 100-150

Tungsten H2O2 20-100 SF6 100-150


K3Fe(CN)6:KOH:KH2PO4 34

Chromium Ce(NH4) (NO3)6:HCl4 2 Cl2 5


HCl

Organic H2SO4:H2O2 > 1.000 O2 35-3.500


layers
CH3COCH3 (acetone) > 4.000
Wet and Dry Etchants of Thin Metal Films and Dielectric Insulators.
Adapted from Williams and Muller [3].
Wet Etchants Etch Rate Dry Etching
(acqueous solutions) (nm/min) Gases (Plasma Etch Rate
phase) (nm/min)
Silicon HF 20-2.000 CHF3+O2 50-150
Dioxide
HF:NH4F(buffered HF) 100-500 CHF3+CF4 250-500

Silicon H3PO4 5 SF6 150-250


Nitride
CHF3+CF4 100-150
Aluminium H3PO4:HNO3:CH3COOH 660 Cl2+SiCl4 100-150
HF 5 CHCl3+BCl3 200-600

Gold KI 40

Titanium HF:H2O2 800 SF6 100-150

Tungsten H2O2 20-100 SF6 100-150


K3Fe(CN)6:KOH:KH2PO4 34

Chromium Ce(NH4) (NO3)6:HCl4 2 Cl2 5


HCl

Organic H2SO4:H2O2 > 1.000 O2 35-3.500


layers
CH3COCH3 (acetone) > 4.000
Liquid and Gas Phase Etchants of Silicon. Adapted from Kovacs et al. [5].
Ethylene
HF:HNO3: diamine
CH3COOH KOH pyrochatechol (CH3)4NOH SF6/C4F8
(EDP) (TMAH) SF6 (DRIE)
Etch type Wet Wet Wet Wet Plasma Plasma

Typical 250ml HF, 40 to 50 750 ml Ethylene- 20 to 25 wt%


formulation 500ml wt% diamine,
HNO3 120 g
800 ml Pyrochatechol,
CH3COOH 100 ml water

Anisotropic No Yes Yes Yes Varies Yes


Temperature 250C 70- 1150C 900C 0- 20-
900C 1000C 800C

Etch rate 1 to 20 0.5 to 2 0.75 0.5 to 1.5 0.1 to 1 to 3


(µm/min) 0.5

{111}/{100} None 100:1 35:1 50:1 None None


selectivity

Nitride etch Low <1 0.1 < 0.1 200 200


(nm/min)

SiO2 etch 10-30 10 0.2 < 0.1 10 10


(nm/min)

p++ etch No Yes Yes Yes No No


Stop
Process Characteristic of the DRIE Process Used in the STS and Plasma
Therm System

SF6 flow 30-150 sccm


C4F8 flow 20-100 sccm
Etch cycle 5-15 s
Deposition cycle 5-12 s
Pressure 0.25-10 Pa
Temperature 20-800 C
Etch rate 1.5-4 μm/min
Sidewall angle 900 ± 20
Selectivity to photoresist ~ 100 to 1
Selectivity to SiO2 ~ 200 to 1

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