S25FL116K/S25FL132K/S25FL164K

16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/

64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory

This product family has been retired and is not recommended for designs. For new and current designs, S25FL064L supersede the
S25FL1-K family. These are the factory-recommended migration paths. Please refer to the S25FL-L Family datasheets for
specifications and ordering information.

Features
 Serial Peripheral Interface (SPI) with Multi-I/O ❐Nonvolatile Status Register bits control protection modes
❐ SPI Clock polarity and phase modes 0 and 3 • Software command protection
❐ Command subset and footprint compatible with S25FL-K • Hardware input signal protection
 Read • Lock-Down until power cycle protection
❐ Normal Read (Serial): • OTP protection of security registers
• 50 MHz clock rate (40 °C to +85 °C/105 °C)  90 nm Floating Gate Technology

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❐ Fast Read (Serial):  Single Supply Voltage

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• 108 MHz clock rate (40 °C to +85 °C/105 °C) ❐ 2.7 V to 3.6 V (Industrial, Industrial Plus, and Extended tem-

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❐ Dual Read: perature range)

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• 108 MHz clock rate (40 °C to +85 °C/105 °C) ❐ 2.6 V to 3.6 V (Extended temperature range)
❐ Quad Read:  Temperature Ranges

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• 108 MHz clock rate (40 °C to +85 °C/105 °C) ❐ Industrial (40 °C to +85 °C)
❐ 54 MB/s maximum continuous data transfer rate ❐ Industrial Plus (40 °C to +105 °C)
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(40 °C to +85 °C/105 °C) ❐ Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
❐ Efficient Execute-In-Place (XIP) ❐ Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
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❐ Continuous and wrapped read modes  Package Options

❐ Serial Flash Discoverable Parameters (SFDP)
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❐ S25FL116K
 Program • 8-lead SOIC (150 mil) – SOA008
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❐ Serial-input Page Program (up to 256 bytes) • 8-lead SOIC (208 mil) – SOC008
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❐ Program Suspend and Resume

• 8-contact WSON 5 mm x 6 mm – WND008
 Erase
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• 24-ball BGA 6 mm  8 mm – FAB024 and FAC024

❐ Uniform sector erase (4 kB)
• KGD / KGW
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❐ Uniform block erase (64 kB)

❐ S25FL132K
❐ Chip erase
• 8-lead SOIC (150 mil) – SOA008
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❐ Erase Suspend and Resume

• 8-lead SOIC (208 mil) – SOC008
 Cycling Endurance
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• 8-contact USON 4 mm  4 mm – UNF008

❐ 100K Program-Erase cycles, minimum
• 8-contact WSON 5 mm  6 mm – WND008
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 Data Retention
• 24-ball BGA 6 mm  8 mm – FAB024 and FAC024
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❐ 20-year data retention, minimum

• KGD / KGW
 Security
❐ S25FL164K
❐ Three 256-byte Security Registers with OTP protection
• 8-lead SOIC (208 mil) – SOC008
❐ Low supply voltage protection of the entire memory
• 16-lead SOIC (300 mil) – SO3016
❐ Pointer-based security protection feature (S25FL132K and
S25FL164K) • 8-contact WSON 5 mm  6 mm – WND008
❐ Top / Bottom relative Block Protection Range, 4 kB to all of • 24-ball BGA 6 mm  8 mm – FAB024 and FAC024
memory
❐ 8-Byte Unique ID for each device

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 002-00497 Rev. *I Revised July 04, 2018
 S25FL116K/S25FL132K/S25FL164K

Logic Block Diagram

CS#

X Decoders
SCK
Memory
SI/IO0

SO/IO1 Control Y Decoders

I/O Logic

WP#/IO2 Data Latch

HOLD#/IO3

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Data Path

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Performance Summary rN
Maximum Read Rates (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
Command Clock Rate (MHz) Mbytes/s
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Read 50 6.25
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Fast Read 108 13.5

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Dual Read 108 27

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Quad Read 108 54

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Typical Program and Erase Rates (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
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Operation kbytes/s
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Page Programming (256-byte page buffer) 365

4-kbyte Sector Erase 81
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64-kbyte Sector Erase 131

Typical Current Consumption (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)

Operation Current (mA)
Serial Read 50 MHz 7
Serial Read 108 MHz 12
Dual Read 108 MHz 14
Quad Read 108 MHz 16
Program 20
Erase 20
Standby 0.015
Deep-Power Down 0.002

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 S25FL116K/S25FL132K/S25FL164K

Contents
1. General Description..................................................... 4 6.1 Connection Diagrams ................................................... 29
1.1 Migration Notes.............................................................. 5 6.2 Physical Diagrams ........................................................ 31
1.2 Glossary......................................................................... 6 7. Software Interface....................................................... 38
1.3 Other Resources............................................................ 7
8. Address Space Maps.................................................. 38
2. Hardware Interface....................................................... 7
8.1 Overview....................................................................... 38
2.1 Serial Peripheral Interface with Multiple Input / Output 8.2 Flash Memory Array...................................................... 38
(SPI-MIO)....................................................................... 7 8.3 Security Registers......................................................... 39
3. Signal Descriptions ..................................................... 8 8.4 Security Register 0 — Serial Flash Discoverable
3.1 Input / Output Summary................................................. 8 Parameters (SFDP — JEDEC JESD216B) .................. 39
3.2 Address and Data Configuration.................................... 8 8.5 Status Registers ........................................................... 50
3.3 Serial Clock (SCK) ......................................................... 8 8.6 Device Identification...................................................... 60
3.4 Chip Select (CS#) .......................................................... 9 9. Functional Description ............................................... 61
3.5 Serial Input (SI) / IO0 ..................................................... 9

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9.1 SPI Operations ............................................................. 61
3.6 Serial Output (SO) / IO1................................................. 9

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9.2 Write Protection ............................................................ 62
3.7 Write Protect (WP#) / IO2 .............................................. 9

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9.3 Status Registers ........................................................... 62
3.8 HOLD# / IO3 .................................................................. 9
10. Commands .................................................................. 63

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3.9 Core and I/O Signal Voltage Supply (VCC) .................. 10
3.10 Supply and Signal Ground (VSS) ................................. 10 10.1 Configuration and Status Commands ........................... 65

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3.11 Not Connected (NC) .................................................... 10 10.2 Program and Erase Commands ................................... 68
3.12 Reserved for Future Use (RFU)................................... 10 10.3 Read Commands .......................................................... 71
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3.13 Do Not Use (DNU) ....................................................... 10 10.4 Reset Commands ......................................................... 76
3.14 Block Diagrams............................................................ 10 10.5 ID and Security Commands .......................................... 78
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10.6 Set Block / Pointer Protection (39h) — S25FL132K

4. Signal Protocols......................................................... 12
and S25FL164K............................................................ 82
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4.1 SPI Clock Modes ......................................................... 12

4.2 Command Protocol ...................................................... 12 11. Data Integrity ............................................................... 84
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4.3 Interface States............................................................ 16 11.1 Erase Endurance .......................................................... 84

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4.4 Status Register Effects on the Interface ...................... 18 11.2 Data Retention .............................................................. 84
11.3 Initial Delivery State ...................................................... 84
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4.5 Data Protection ............................................................ 19

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5. Electrical Characteristics .......................................... 20 12. Ordering Information .................................................. 85

5.1 Absolute Maximum Ratings ......................................... 20 13. Revision History.......................................................... 88
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5.2 Thermal Resistance ..................................................... 21 Document History Page ..................................................... 88

5.3 Operating Ranges........................................................ 21 Sales, Solutions, and Legal Information .......................... 91
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5.4 DC Electrical Characteristics ....................................... 22 Worldwide Sales and Design Support ........................... 91
5.5 AC Measurement Conditions ....................................... 23
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Products ........................................................................ 91
5.6 Power-Up Timing ......................................................... 24
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PSoC® Solutions .......................................................... 91

5.7 Power-On (Cold) Reset................................................ 25 Cypress Developer Community ..................................... 91
5.8 AC Electrical Characteristics........................................ 25 Technical Support ......................................................... 91
6. Physical Interface ...................................................... 29

Document Number: 002-00497 Rev. *I Page 3 of 90

 S25FL116K/S25FL132K/S25FL164K

1. General Description
The S25FL1-K of nonvolatile flash memory devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI
single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O
or QIO) serial protocols. This multiple width interface is called SPI Multi-I/O or MIO.
The SPI-MIO protocols use only 4 to 6 signals:
 Chip Select (CS#)
 Serial Clock (SCK)
❐ IO0 (SI)
❐ IO1 (SO)
❐ IO2 (WP#)
❐ IO3 (HOLD#)
 Serial Data

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The SIO protocol uses Serial Input (SI) and Serial Output (SO) for data transfer. The DIO protocols use IO0 and IO1 to input or

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output two bits of data in each clock cycle.

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The Write Protect (WP#) input signal option allows hardware control over data protection. Software controlled commands can also

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manage data protection.

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The HOLD# input signal option allows commands to be suspended and resumed on any clock cycle.
The QIO protocols use all of the data signals (IO0 to IO3) to transfer 4 bits in each clock cycle. When the QIO protocols are enabled
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the WP# and HOLD# inputs and features are disabled.
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Clock frequency of up to 108 MHz is supported, allowing data transfer rates up to:
 Single bit data path = 13.5 Mbytes/s
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 Dual bit data path = 27 Mbytes/s

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 Quad bit data path = 54 Mbytes/s

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Executing code directly from flash memory is often called Execute-in-Place or XIP. By using S25FL1-K devices at the higher clock
rates supported, with QIO commands, the command read transfer rate can match or exceed traditional x8 or x16 parallel interface,
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asynchronous, NOR flash memories, while reducing signal count dramatically. The Continuous Read Mode allows for random
memory access with as few as 8 clocks of overhead for each access, providing efficient XIP operation. The Wrapped Read mode
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provides efficient instruction or data cache refill via a fast read of the critical byte that causes a cache miss, followed by reading all
other bytes in the same cache line in a single read command.
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The S25FL1-K:
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 Support JEDEC standard manufacturer and device type identification.

 Program pages of 256 bytes each. One to 256 bytes can be programmed in each Page Program operation. Pages can be erased
in groups of 16 (4-kB aligned sector erase), groups of 256 (64-kB aligned block erase), or the entire chip (chip erase).
 The S25FL1-K devices operate on a single 2.6 V/2.7 V to 3.6 V power supply and all devices are offered in space-saving
packages.
 Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer flexibility
and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly
(XIP), and storing reprogrammable data.

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 S25FL116K/S25FL132K/S25FL164K

1.1 Migration Notes

1.1.1 Features Comparison

The S25FL1-K is command set and footprint compatible with prior generation FL-K and FL-P families.

FL Generations Comparison
Parameter S25FL1-K S25FL-K S25FL-P
Technology Node 90 nm 90 nm 90 nm
Architecture Floating Gate Floating Gate MirrorBit®
Release Date In Production In Production In Production
Density 16 Mbit - 64 Mbit 4 Mbit - 128 Mbit 32 Mbit - 256 Mbit
Bus Width x1, x2, x4 x1, x2, x4 x1, x2, x4
Supply Voltage 2.6 V / 2.7 V - 3.6 V 2.7 V - 3.6 V 2.7 V - 3.6 V

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Normal Read Speed 6 MB/s (50 MHz) 6 MB/s (50 MHz) 5 MB/s (40 MHz)

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Fast Read Speed 13.5 MB/s (108 MHz) 13 MB/s (104 MHz) 13 MB/s (104 MHz)

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Dual Read Speed 27 MB/s (108 MHz) 26 MB/s (104 MHz) 20 MB/s (80 MHz)
Quad Read Speed 54 MB/s (108 MHz at 85°C/105°C) 52 MB/s (104 MHz) 40 MB/s (80 MHz)

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Program Buffer Size 256B 256B 256B
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Page Programming Time
700 µs (256B) 700 µs (256B) 1500 µs (256B)
(typ.)
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Program Suspend / Resume Yes Yes No

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Erase Sector Size 4 kB / 64 kB 4 kB / 32 kB / 64 kB 64 kB / 256 kB

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Parameter Sector Size N/A N/A 4 kB

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Sector Erase Time (typ.) 50 ms (4 kB), 500 ms (64 kB) 30 ms (4 kB), 150 ms (64 kB) 500 ms (64 kB)
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Erase Suspend / Resume Yes Yes No

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OTP Size 768B (3 x 256B) 768B (3 x 256B) 506B

Operating Temperature -40°C to +85°C / +105°C -40°C to +85°C -40°C to +85°C / +105°C
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Notes:
1. S25FL-K family devices can erase 4-kB sectors in groups of 32 kB or 64 kB.
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2. S25FL1-K family devices can erase 4-kB sectors in groups of 64 kB.

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3. S25FL-P has either 64-kB or 256-kB uniform sectors depending on an ordering option.
4. Refer to individual data sheets for further details.

1.1.2 Known Feature Differences from Prior Generations

1.1.2.1 Secure Silicon Region (OTP)

The size and format (address map) of the OTP area is the same for the S25FL1-K and the S25FL-K but different for the S25FL-P.

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 S25FL116K/S25FL132K/S25FL164K

1.1.2.2 Commands Not Supported

The following S25FL-K and S25FL-P commands are not supported:
 Quad Page PGM (32h)
 Half-Block Erase 32K (52h)
 Word read Quad I/O (E7)
 Octal Word Read Quad I/O (E3h)
 MFID dual I/O (92h)
 MFID quad I/O (94h)
 Read Unique ID (4Bh)

1.1.2.3 New Features

The S25FL1-K introduces new features to low density SPI category memories:

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 Variable read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands

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 Industrial Plus and Extended temperature range

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 Volatile configuration option in addition to legacy nonvolatile configuration

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1.2 Glossary
 Command. All information transferred between the host system and memory during one period while CS# is low. This includes
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the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data.
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 Flash. The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of memory
bits in parallel, making the erase operation much faster than early EEPROM.
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 High. A signal voltage level ≥ VIH or a logic level representing a binary one (1).
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 Instruction. The 8-bit code indicating the function to be performed by a command (sometimes called an operation code or
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opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command.
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 Low. A signal voltage level  VIL or a logic level representing a binary zero (0).
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 LSB. Least Significant Bit. Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a
register or data value.
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 MSB. Most Significant Bit. Generally the left most bit, with the highest order of magnitude value, within a group of bits of a register
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or data value.
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 nonvolatile. No power is needed to maintain data stored in the memory.

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 OPN. Ordering Part Number. The alphanumeric string specifying the memory device type, density, package, factory nonvolatile
configuration, etc. used to select the desired device.
 Page. 256-byte aligned and length group of data.
 PCB. Printed Circuit Board.
 Register Bit References. Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB].
 Sector. Erase unit size; all sectors are physically 4-kbytes aligned and length. Depending on the erase command used, groups of
physical sectors may be erased as a larger logical sector of 64 kbytes.
 Write. An operation that changes data within volatile or nonvolatile registers bits or nonvolatile flash memory. When changing
nonvolatile data, an erase and reprogramming of any unchanged nonvolatile data is done, as part of the operation, such that the
nonvolatile data is modified by the write operation, in the same way that volatile data is modified – as a single operation. The
nonvolatile data appears to the host system to be updated by the single write command, without the need for separate commands
for erase and reprogram of adjacent, but unaffected data.

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 S25FL116K/S25FL132K/S25FL164K

1.3 Other Resources

1.3.1 Cypress Flash Memory Roadmap

www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap

1.3.2 Links to Software

www.cypress.com/software-and-drivers-cypress-flash-memory

1.3.3 Links to Application Notes

www.cypress.com/cypressappnotes

2. Hardware Interface
2.1 Serial Peripheral Interface with Multiple Input / Output (SPI-MIO)
Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large

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number of signal connections and larger package size. The large number of connections increase power consumption due to so

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many signals switching and the larger package increases cost.

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The S25FL1-K reduces the number of signals for connection to the host system by serially transferring all control, address, and data

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information over 4 to 6 signals. This reduces the cost of the memory package, reduces signal switching power, and either reduces
the host connection count or frees host connectors for use in providing other features.

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The S25FL1-K uses the industry standard single bit SPI and also supports commands for 2-bit (Dual) and 4-bit (Quad) wide serial
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transfers. This multiple width interface is called SPI Multi-I/O or SPI-MIO.
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d ed
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 S25FL116K/S25FL132K/S25FL164K

3. Signal Descriptions
3.1 Input / Output Summary

Table 1. Signal List

Signal Name Type Description
SCK Input Serial Clock.
CS# Input Chip Select.
SI (IO0) I/O Serial Input for single bit data commands. IO0 for Dual or Quad commands.
SO (IO1) I/O Serial Output for single bit data commands. IO1 for Dual or Quad commands.
Write Protect in single bit or Dual data commands. IO2 in Quad mode. The signal has an internal
WP# (IO2) I/O
pull-up resistor and may be left unconnected in the host system if not used for Quad commands.
Hold (pause) serial transfer in single bit or Dual data commands. IO3 in Quad-I/O mode. The

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HOLD# (IO3) I/O signal has an internal pull-up resistor and may be left unconnected in the host system if not used

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for Quad commands.

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VCC Supply Core and I/O Power Supply.

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VSS Supply Ground.

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Not Connected. No device internal signal is connected to the package connector nor is there
any future plan to use the connector for a signal. The connection may safely be used for routing
NC Unused
space for a signal on a Printed Circuit Board (PCB). However, any signal connected to an NC
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must not have voltage levels higher than VCC.
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Reserved for Future Use. No device internal signal is currently connected to the package
connector but there is potential future use of the connector for a signal. It is recommended to not
RFU Reserved
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use RFU connectors for PCB routing channels so that the PCB may take advantage of future
enhanced features in compatible footprint devices.
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Do Not Use. Do not use these connections for PCB signal routing channels. Do not connect any
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DNU Reserved
host system signal to this connection.
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Note
1. A signal name ending with the # symbol is active when low.
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3.2 Address and Data Configuration

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Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the SI signal. Data
may be sent back to the host serially on the Serial Output (SO) signal.
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Dual or Quad Output commands send information from the host to the memory only on the SI signal. Data will be returned to the
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host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input / Output (I/O) commands send information from the host to the memory as bit pairs on IO0 and IO1 or four bit
(nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups
on IO0, IO1, IO2, and IO3.

3.3 Serial Clock (SCK)

This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on
the rising edge of the SCK signal. Data output changes after the falling edge of SCK.

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 S25FL116K/S25FL132K/S25FL164K

3.4 Chip Select (CS#)

The chip select signal indicates when a command for the device is in process and the other signals are relevant for the memory
device. When the CS# signal is at the logic high state, the device is not selected and all input signals are ignored and all output
signals are high impedance. Unless an internal Program, Erase or Write Status Registers embedded operation is in progress, the
device will be in the Standby Power mode. Driving the CS# input to logic low state enables the device, placing it in the Active Power
mode. After Power-Up, a falling edge on CS# is required prior to the start of any command.

3.5 Serial Input (SI) / IO0

This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed.
Values are latched on the rising edge of serial SCK clock signal.
SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK).

3.6 Serial Output (SO) / IO1

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This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock

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signal.

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SO becomes IO1, an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK).

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3.7 Write Protect (WP#) / IO2
When WP# is driven Low (VIL), while the Status Register Protect bits (SRP1 and SRP0) of the Status Registers (SR2[0] and SR1[7])
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are set to 0 and 1 respectively, it is not possible to write to the Status Registers. This prevents any alteration of the Status Registers.
As a consequence, all the data bytes in the memory area that are protected by the Block Protect, TB, SEC, and CMP bits in the
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status registers, are also hardware protected against data modification while WP# remains Low.
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The WP# function is not available when the Quad mode is enabled (QE) in Status Register-2 (SR2[1]=1). The WP# function is
replaced by IO2 for input and output during Quad mode for receiving addresses, and data to be programmed (values are latched on
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rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK).
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WP# has an internal pull-up resistance; when unconnected, WP# is at VIH and may be left unconnected in the host system if not
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used for Quad mode.

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3.8 HOLD# / IO3

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The HOLD# signal is used to pause any serial communications with the device without deselecting the device or stopping the serial
clock.
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To enter the Hold condition, the device must be selected by driving the CS# input to the logic low state. It is required that the user
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keep the CS# input low state during the entire duration of the Hold condition. This is to ensure that the state of the interface logic
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remains unchanged from the moment of entering the Hold condition.

The Hold condition starts on the falling edge of the Hold (HOLD#) signal, provided that this coincides with SCK being at the logic low
state. If the falling edge does not coincide with the SCK signal being at the logic low state, the Hold condition starts whenever the
SCK signal reaches the logic low state. Taking the HOLD# signal to the logic low state does not terminate any Write, Program or
Erase operation that is currently in progress.
During the Hold condition, SO is in high impedance and both the SI and SCK input are Don't Care.
The Hold condition ends on the rising edge of the Hold (HOLD#) signal, provided that this coincides with the SCK signal being at the
logic low state. If the rising edge does not coincide with the SCK signal being at the logic low state, the Hold condition ends
whenever the SCK signal reaches the logic low state.

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 S25FL116K/S25FL132K/S25FL164K

Figure 3.1 Hold Condition

CS#
SCK

HOLD#
Hold Condition Hold Condition
Standard Use Non-standard Use

SI_or_IO_(during_input) Valid Input Don’t Care Valid Input Don’t Care Valid Input
SO_or_IO_(internal) A B C D E
SO_or_IO_(external) A B B C D E

3.9 Core and I/O Signal Voltage Supply (VCC)

VCC is the voltage source for all device internal logic and input / output signals. It is the single voltage used for all device functions
including read, program, and erase.

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3.10 Supply and Signal Ground (VSS)

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VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers.

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3.11 Not Connected (NC)

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No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The
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connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB).

3.12 Reserved for Future Use (RFU)

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No device internal signal is currently connected to the package connector but is there potential future use for the connector for a
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signal. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future
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enhanced features in compatible footprint devices.

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3.13 Do Not Use (DNU)

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A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other
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purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the
signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS.
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Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections.
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3.14 Block Diagrams

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Figure 1. Bus Master and Memory Devices on the SPI Bus – Single Bit Data Path
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HOLD#
HOLD#
WP#
WP#
SI SI
SO
SO
SCK
SCK

CS2#
CS2#
CS1#
CS1#

SPI SPI SPI

Bus Master Flash Flash

Figure 2. Bus Master and Memory Devices on the SPI Bus – Dual Bit Data Path

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 S25FL116K/S25FL132K/S25FL164K

HOLD#
HOLD#
WP#
WP#
IO1 IO1
IO0
IO0
SCK
SCK

CS2#
CS2#
CS1#
CS1#

SPI SPI SPI

Bus Master Flash Flash

Figure 3. Bus Master and Memory Devices on the SPI Bus – Quad Bit Data Path

n
IO3

ig
IO3
IO2
IO2

es
IO1
IO1
IO0

D
IO0
SCK
SCK

ew
CS2#
CS2#
CS1#
CS1#
rN
fo

SPI SPI SPI

Bus Master Flash Flash
d ed
en
m
om
ec
R
ot
N

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 S25FL116K/S25FL132K/S25FL164K

4. Signal Protocols
4.1 SPI Clock Modes
The S25FL1-K can be driven by an embedded microcontroller (bus master) in either of the two following clocking modes.
 Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0
 Mode 3 with CPOL = 1 and, CPHA = 1
For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is
always available from the falling edge of the SCK clock signal.
The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring any data.
 SCK will stay at logic low state with CPOL = 0, CPHA = 0
 SCK will stay at logic high state with CPOL = 1, CPHA = 1

Figure 4. SPI Modes Supported

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ig
es
CPOL=0_CPHA=0_SCK

D
CPOL=1_CPHA=1_SCK
CS#

ew
SI MSB rN
SO MSB
fo
ed

Timing diagrams throughout the remainder of the document are generally shown as both mode 0 and 3 by showing SCK as both
high and low at the fall of CS#. In some cases a timing diagram may show only mode 0 with SCK low at the fall of CS#. In such a
d
en

case, mode 3 timing simply means clock is high at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of
CS# is needed for mode 3.
m

SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the
om

first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low
at the beginning of a command.
ec

4.2 Command Protocol

R

All communication between the host system and S25FL1-K memory devices is in the form of units called commands.
ot

All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands
N

may also have an address, instruction modifier (mode), latency period, data transfer to the memory, or data transfer from the
memory. All instruction, address, and data information is transferred serially between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to the host serially on
the SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be returned to the host as a
sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3.

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 S25FL116K/S25FL132K/S25FL164K

Commands are structured as follows:

 Each command begins with CS# going low and ends with CS# returning high. The memory device is selected by the host driving
the Chip Select (CS#) signal low throughout a command.
 The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory.
 Each command begins with an eight bit (byte) instruction. The instruction is always presented only as a single bit serial sequence
on the Serial Input (SI) signal with one bit transferred to the memory device on each SCK rising edge. The instruction selects the
type of information transfer or device operation to be performed.
 The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces
in the device. The instruction determines the address space used. The address is a 24-bit, byte boundary, address. The address
transfers occur on SCK rising edge.
 The width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be
single bit serial on only the SI or Serial Output (SO) signals, they may be done in 2-bit groups per (dual) transfer on the IO0 and IO1
signals, or they may be done in 4-bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the least
significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. SIngle bits or

n
ig
parallel bit groups are transferred in most to least significant bit order.

es
 Some instructions send an instruction modifier called mode bits, following the address, to indicate that the next command will be
of the same type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction byte,

D
only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated

ew
in a sequence of commands. The mode bit transfers occur on SCK rising edge.
 The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before
rN
read data is returned to the host.
fo

 Write data bit transfers occur on SCK rising edge.

 SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred to
ed

as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling edge at
d

the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following SCK rising edge.
en

Each following transfer occurs on the next SCK rising edge.

 If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal high.
m

The CS# signal can be driven high after any transfer in the read data sequence. This will terminate the command.
om

 At the end of a command that does not return data, the host drives the CS# input high. The CS# signal must go high after the
eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven high
ec

when the number of clock cycles after CS# signal was driven low is an exact multiple of eight cycles. If the CS# signal does not go
R

high exactly at the eight SCK cycle boundary of the instruction or write data, the command is rejected and not executed.
ot

 All instruction, address, and mode bits are shifted into the device with the most significant bits (MSB) first. The data bits are
shifted in and out of the device MSB first. All data is transferred in byte units with the lowest address byte sent first. Following bytes
N

of data are sent in lowest to highest byte address order i.e. the byte address increments.
 All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded
operation. These are discussed in the individual command descriptions.
 Depending on the command, the time for execution varies. A command to read status information from an executing command is
available to determine when the command completes execution and whether the command was successful.

Document Number: 002-00497 Rev. *I Page 13 of 90

 S25FL116K/S25FL132K/S25FL164K

4.2.1 Command Sequence Examples

Figure 5. Stand Alone Instruction Command

CS#

SCK

SI 7 6 5 4 3 2 1 0

SO

Phase Instruction

Figure 6. Single Bit Wide Input Command

CS#

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ig
SCK

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SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

D
SO

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Phase Instruction Input Data
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Figure 7. Single Bit Wide Output Command
fo

CS#
ed

SCK
d
en

SI 7 6 5 4 3 2 1 0
m

SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
om

Phase Instruction Data 1 Data 2

ec

Figure 8. Single Bit Wide I/O Command without Latency

R

CS#
ot
N

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

Phase Instruction Address Data 1 Data 2

Figure 9. Single Bit Wide I/O Command with Latency

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO 7 6 5 4 3 2 1 0

Phase Instruction Address Dummy Cycles Data 1

Document Number: 002-00497 Rev. *I Page 14 of 90

 S25FL116K/S25FL132K/S25FL164K

Figure 10. Dual Output Command

CS#
SCK

IO0 7 6 5 4 3 2 1 0 23 22 21 0 6 4 2 0 6 4 2 0
IO1 7 5 3 1 7 5 3 1
Phase Instruction Address Dummy Data 1 Data 2

Figure 11. Quad Output Command without Latency

CS#

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ig
SCK

es
IO0 7 6 5 4 3 2 1 0 23 1 0 4 0 4 0 4 0 4 0 4 0 4

D
IO1 5 1 5 1 5 1 5 1 5 1 5

ew
IO2 6 2 6 2 6 2 6 2 6 2 6

IO3 7 3 7 3 7 3 7 3 7 3 7
rN
Phase Instruction Address Data 1 Data 2 Data 3 Data 4 Data 5 ...
fo
ed

Figure 12. Dual I/O Command

d

CS#
en

SCK
m

IO0 7 6 5 4 3 2 1 0 22 2 0 6 4 2 0 6 4 2 0
om

IO1 23 3 1 7 5 3 1 7 5 3 1
ec

Phase Instruction Address Dummy Data 1 Data 2

R
ot

Figure 13. Quad I/O Command

N

CS#

SCK

IO0 7 6 5 4 3 2 1 0 20 4 0 4 4 0 4 0 4 0 4 0

IO1 21 5 1 5 5 1 5 1 5 1 5 1

IO2 22 6 2 6 6 2 6 2 6 2 6 2

IO3 23 7 3 7 7 3 7 3 7 3 7 3

Phase Instruction Address Mode Dummy D1 D2 D3 D4

Additional sequence diagrams, specific to each command, are provided in Section 10. Commands on page 63.

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 S25FL116K/S25FL132K/S25FL164K

4.3 Interface States

This section describes the input and output signal levels as related to the SPI interface behavior.

Table 2. Interface States Summary

HOLD# / WP# / SO /
Interface State VCC SCK CS# IO3 IO2 IO1 SI / IO0
Low Power
< VWI X X X X Z X
Hardware Data Protection
Power-On (Cold) Reset ≥ VCC (min) X HH X X Z X
Interface Standby ≥ VCC (min) X X X X Z X
Instruction Cycle ≥ VCC (min) HT HL HH HV Z HV
Hold Cycle ≥ VCC (min) HV or HT HL HL X X X
Single Input Cycle

n
≥ VCC (min) HT HL HH X Z HV
Host to Memory Transfer

ig
Single Latency (Dummy) Cycle ≥ VCC (min) HT HL HH X Z X

es
Single Output Cycle

D
≥ VCC (min) HT HL HH X MV X
Memory to Host Transfer

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Dual Input Cycle
≥ VCC (min) HT HL HH X HV HV
Host to Memory Transfer
rN
Dual Latency (Dummy) Cycle ≥ VCC (min) HT HL HH X X X
fo

Dual Output Cycle

≥ VCC (min) HT HL HH X MV MV
Memory to Host Transfer
ed

Quad Input Cycle

≥ VCC (min) HT HL HV HV HV HV
Host to Memory Transfer
d
en

Quad Latency (Dummy) Cycle ≥ VCC (min) HT HL X X X X

Quad Output Cycle
m

≥ VCC (min) HT HL MV MV MV MV
Memory to Host Transfer
om

Legend:
Z = no driver - floating signal
ec

HL = Host driving VIL

HH = Host driving VIH
R

HV = either HL or HH
X = HL or HH or Z
ot

HT = toggling between HL and HH

ML = Memory driving VIL
N

MH = Memory driving VIH

MV = either ML or MH

4.3.1 Low Power Hardware Data Protection

When VCC is less than VWI the memory device will ignore commands to ensure that program and erase operations can not start
when the core supply voltage is out of the operating range.

4.3.2 Power-On (Cold) Reset

When the core voltage supply remains at or below the VCC (Low) voltage for > tPD time, then rises
to ≥ VWI the device will begin its Power-On-Reset (POR) process. POR continues until the end of tPUW. During tPUW the device does
not react to write commands. Following the end of tPUW the device transitions to the Interface Standby state and can accept write
commands. For additional information on POR see Section 5.7 Power-On (Cold) Reset on page 25.

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 S25FL116K/S25FL132K/S25FL164K

4.3.3 Interface Standby

When CS# is high the SPI interface is in standby state. Inputs are ignored. The interface waits for the beginning of a new command.
The next interface state is Instruction Cycle when CS# goes low to begin a new command.
While in interface standby state the memory device draws standby current (ISB) if no embedded algorithm is in progress. If an
embedded algorithm is in progress, the related current is drawn until the end of the algorithm when the entire device returns to
standby current draw.

4.3.4 Instruction Cycle

When the host drives the MSB of an instruction and CS# goes low, on the next rising edge of SCK the device captures the MSB of
the instruction that begins the new command. On each following rising edge of SCK the device captures the next lower significance
bit of the 8-bit instruction. The host keeps CS# low, HOLD# high, and drives Write Protect (WP#) signal as needed for the
instruction. However, WP# is only relevant during instruction cycles of a Write Status Registers command and is otherwise ignored.
Each instruction selects the address space that is operated on and the transfer format used during the remainder of the command.
The transfer format may be Single, Dual output, Quad output, Dual I/O, or Quad I/O. The expected next interface state depends on
the instruction received.

n
ig
Some commands are stand alone, needing no address or data transfer to or from the memory. The host returns CS# high after the

es
rising edge of SCK for the eighth bit of the instruction in such commands. The next interface state in this case is Interface Standby.

D
4.3.5 Hold

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When Quad mode is not enabled (SR2[1]=0) the HOLD# / IO3 signal is used as the HOLD# input. The host keeps HOLD# low, SCK
may be at a valid level or continue toggling, and CS# is low. When HOLD# is low a command is paused, as though SCK were held
rN
low. SI / IO0 and SO / IO1 ignore the input level when acting as inputs and are high impedance when acting as outputs during hold
state. Whether these signals are input or output depends on the command and the point in the command sequence when HOLD# is
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asserted low.
When HOLD# returns high the next state is the same state the interface was in just before HOLD# was asserted low.
d ed

4.3.6 Single Input Cycle — Host to Memory Transfer

en

Several commands transfer information after the instruction on the single serial input (SI) signal from host to the memory device. The
dual output, and quad output commands send address to the memory using only SI but return read data using the I/O signals. The
m

host keeps CS# low, HOLD# high, and drives SI as needed for the command. The memory does not drive the Serial Output (SO)
om

signal.
The expected next interface state depends on the instruction. Some instructions continue sending address or data to the memory
ec

using additional Single Input Cycles. Others may transition to Single Latency, or directly to Single, Dual, or Quad Output.
R

4.3.7 Single Latency (Dummy) Cycle

ot

Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
N

transfer to the host. The number of latency cycles are determined by the instruction. During the latency cycles, the host keeps CS#
low, and HOLD# high. The Write Protect (WP#) signal is ignored. The host may drive the SI signal during these cycles or the host
may leave SI floating. The memory does not use any data driven on SI / I/O0 or other I/O signals during the latency cycles. In dual or
quad read commands, the host must stop driving the I/O signals on the falling edge at the end of the last latency cycle. It is
recommended that the host stop driving I/O signals during latency cycles so that there is sufficient time for the host drivers to turn off
before the memory begins to drive at the end of the latency cycles. This prevents driver conflict between host and memory when the
signal direction changes. The memory does not drive the Serial Output (SO) or I/O signals during the latency cycles.
The next interface state depends on the command structure i.e. the number of latency cycles, and whether the read is single, dual,
or quad width.

4.3.8 Single Output Cycle — Memory to Host Transfer

Several commands transfer information back to the host on the single Serial Output (SO) signal. The host keeps CS# low, and
HOLD# high. The Write Protect (WP#) signal is ignored. The memory ignores the Serial Input (SI) signal. The memory drives SO
with data.
The next interface state continues to be Single Output Cycle until the host returns CS# to high ending the command.

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 S25FL116K/S25FL132K/S25FL164K

4.3.9 Dual Input Cycle — Host to Memory Transfer

The Read Dual I/O command transfers two address or mode bits to the memory in each cycle. The host keeps CS# low, HOLD#
high. The Write Protect (WP#) signal is ignored. The host drives address on SI / IO0 and SO / IO1.
The next interface state following the delivery of address and mode bits is a Dual Latency Cycle if there are latency cycles needed or
Dual Output Cycle if no latency is required.

4.3.10 Dual Latency (Dummy) Cycle

Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the instruction. During the latency cycles, the host keeps CS#
low, and HOLD# high. The Write Protect (WP#) signal is ignored. The host may drive the SI / IO0 and SO / IO1 signals during these
cycles or the host may leave
SI / IO0 and SO / IO1 floating. The memory does not use any data driven on SI / IO0 and SO / IO1 during the latency cycles. The
host must stop driving SI / IO0 and SO / IO1 on the falling edge at the end of the last latency cycle. It is recommended that the host
stop driving them during all latency cycles so that there is sufficient time for the host drivers to turn off before the memory begins to
drive at the end of the latency cycles. This prevents driver conflict between host and memory when the signal direction changes. The

n
memory does not drive the SI / IO0 and SO / IO1 signals during the latency cycles.

ig
The next interface state following the last latency cycle is a Dual Output Cycle.

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D
4.3.11 Dual Output Cycle — Memory to Host Transfer
The Read Dual Output and Read Dual I/O return data to the host two bits in each cycle. The host keeps CS# low, and HOLD# high.

ew
The Write Protect (WP#) signal is ignored. The memory drives data on the SI / IO0 and SO / IO1 signals during the dual output
cycles.
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The next interface state continues to be Dual Output Cycle until the host returns CS# to high ending the command.
fo

4.3.12 Quad Input Cycle — Host to Memory Transfer

ed

The Read Quad I/O command transfers four address, mode, or data bits to the memory in each cycle. The host keeps CS# low, and
drives the I/O signals.
d
en

For Read Quad I/O the next interface state following the delivery of address and mode bits is a Quad Latency Cycle if there are
latency cycles needed or Quad Output Cycle if no latency is required.
m
om

4.3.13 Quad Latency (Dummy) Cycle

Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
ec

transfer to the host. The number of latency cycles are determined by the Latency Control in the Status Register-3 (SR3[3:0]). During
the latency cycles, the host keeps CS# low. The host may drive the IO signals during these cycles or the host may leave the IO
R

floating. The memory does not use any data driven on I/O during the latency cycles. The host must stop driving the IO signals on the
ot

falling edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles so that
N

there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency cycles. This prevents
driver conflict between host and memory when the signal direction changes. The memory does not drive the IO signals during the
latency cycles.
The next interface state following the last latency cycle is a Quad output Cycle.

4.3.14 Quad Output Cycle — Memory to Host Transfer

The Read Quad Output and Read Quad I/O return data to the host four bits in each cycle. The host keeps CS# low. The memory
drives data on IO0-IO3 signals during the Quad output cycles.
The next interface state continues to be Quad Output Cycle until the host returns CS# to high ending the command.

4.4 Status Register Effects on the Interface

The Status Register-2, bit 1 (SR2[1]), selects whether Quad mode is enabled to ignore HOLD# and WP# and allow Read Quad
Output, and Read Quad I/O commands.

Document Number: 002-00497 Rev. *I Page 18 of 90

 S25FL116K/S25FL132K/S25FL164K

4.5 Data Protection

Some basic protection against unintended changes to stored data are provided and controlled purely by the hardware design. These
are described below. Other software managed protection methods are discussed in the software section of this document.

4.5.1 Low Power

When VCC is less than VWI the memory device will ignore commands to ensure that program and erase operations can not start
when the core supply voltage is out of the operating range.

4.5.2 Power-Up
Program and erase operations continue to be prevented during the Power-Up to Write delay (tPUW) because no write command is
accepted until after tPUW.

4.5.3 Deep Power-Down (DPD)

In DPD mode the device responds only to the Resume from DPD command (RES ABh). All other commands are ignored during
DPD mode, thereby protecting the memory from program and erase operations.

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ig
4.5.4 Clock Pulse Count

es
The device verifies that all program, erase, and Write Status Registers commands consist of a clock pulse count that is a multiple of

D
eight before executing them. A command not having a multiple of 8 clock pulse count is ignored and no error status is set for the
command.

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rN
fo
d ed
en
m
om
ec
R
ot
N

Document Number: 002-00497 Rev. *I Page 19 of 90

 S25FL116K/S25FL132K/S25FL164K

5. Electrical Characteristics
5.1 Absolute Maximum Ratings

Table 3. Absolute Maximum Ratings

Parameters [2] Symbol Conditions Range Unit
Supply Voltage VCC –0.6 to +4.0 V
Voltage Applied to any Pin VIO Relative to Ground –0.6 to +4.0 V
Transient Voltage on any Pin VIOT < 20 ns Transient Relative to Ground –2.0 to 6.0 V
Storage Temperature TSTG –65 to +150 °C
[3]
Lead Temperature TLEAD °C
Electrostatic Discharge Voltage VESD Human Body Model [4] –2000 to +2000 V

n
ig
Notes
2. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum

es
ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances

D
(RoHS) 2002/95/EU.
4. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).

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5.1.1 Input Signal Overshoot rN
During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os
may overshoot VSS to negative VIOT or overshoot to positive VIOT, for periods up to 20 ns.
fo

Figure 14. Maximum Negative Overshoot Waveform

ed

< 20 ns < 20 ns
d
en

VIL
m
om

VIOT
ec

< 20 ns
R
ot

Figure 15. Maximum Positive Overshoot Waveform

N

< 20 ns

VIOT

VIH

< 20 ns < 20 ns

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 S25FL116K/S25FL132K/S25FL164K

5.1.2 Latchup Characteristics

Table 4. Latchup Specification
Description Min Max Unit
Input voltage with respect to VSS on all input only connections –1.0 VCC + 1.0 V
Input voltage with respect to VSS on all I/O connections –1.0 VCC + 1.0 V
VCC Current –100 +100 mA

Note
5. Excludes power supply VCC. Test conditions: VCC = 3.0V, one connection at a time tested, connections not being tested are at VSS.

5.2 Thermal Resistance

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Table 5. Thermal Resistance

ig
es
Parameter Description SOA008 SOC008 FAB024 FAC024 WSON Unit
Thermal resistance

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Theta JA 75 75 39 39 18 °C/W
(junction to ambient)

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5.3 Operating Ranges
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Operating ranges define those limits between which functionality of the device is guaranteed.
ed

Table 6. Operating Ranges

d
en

Spec
Parameter Symbol Conditions Min Max Unit
m

Industrial -40 +85

om

Ambient Temperature TA °C
Industrial Plus -40 +105
ec

Supply Voltage VCC Industrial and Industrial Plus Temp 2.7 3.6 V
R

Note
ot

6. VCC voltage during read can operate across the min and max range but should not exceed ± 10% of the voltage used during programming or erase of the data being read.
N

Document Number: 002-00497 Rev. *I Page 21 of 90

 S25FL116K/S25FL132K/S25FL164K

5.4 DC Electrical Characteristics

DC Electrical Characteristics
Max
Parameter Symbol Conditions Min Typ -40 to 85°C -40 to 105°C Unit
Input Leakage ILI ±2 µA
I/O Leakage ILO ±2 µA
CS# = VCC, VIN =
Standby Current ICC1 15 25 25 µA
GND or VCC
Deep Power-Down Current CS# = VCC, VIN =
ICC2 2 5 5 µA
(S25FL116K) GND or VCC
Deep Power-Down Current CS# = VCC, VIN =
ICC2 2 8 10 µA
(S25FL132K / S25FL164K) GND or VCC

n
SCK = 0.1 VCC /

ig
Current: Read Single / Dual /
ICC3 0.9 VCC 4/5/6 6 / 7.5 / 9 6 / 7.5 / 9 mA
Quad 1 MHz [5.4.1]

es
SO = Open

D
SCK = 0.1 VCC /
Current: Read Single / Dual /
ICC3 0.9 VCC 6/7/8 9 / 10.5 / 12 9 / 10.5 / 12 mA
Quad 33 MHz [5.4.1]

ew
SO = Open
SCK = 0.1 VCC /
rN
Current: Read Single / Dual /
ICC3 0.9 VCC 7/8/9 10 / 12 / 13.5 10 / 12 / 13.5 mA
Quad 50 MHz [5.4.1]
SO = Open
fo

SCK = 0.1 VCC /

Current: Read Single / Dual / 12 / 14 /
ed

ICC3 0.9 VCC 18 / 22 / 25 18 / 22 / 25 mA

Quad 108 MHz [5.4.1] 16
SO = Open
d

Current: Write Status Registers ICC4 CS# = VCC 8 12 12 mA

en

Current Page Program ICC5 CS# = VCC 20 25 25 mA

m

Current Sector / Block Erase ICC6 CS# = VCC 20 25 25 mA

om

Current Chip Erase ICC7 CS# = VCC 20 25 25 mA

ec

Input Low Voltage (S25FL116K) VIL -0.5 VCC x 0.2 VCC x 0.2 V
Input Low Voltage
R

VIL -0.5 VCC x 0.3 VCC x 0.3 V

(S25FL132K / S25FL164K)
ot

Input High Voltage VIH VCC x 0.7 VCC + 0.4 VCC + 0.4 V
N

IOL = 100 µA VSS 0.2 0.2 V

Output Low Voltage VOL
IOL = 1.6 mA VSS 0.4 0.4
Output High Voltage VOH IOH = –100 µA VCC – 0.2 VCC VCC V

Note
7. Tested on sample basis and specified through design and characterization data. TA = 25°C, VCC = 3V.

5.4.1 Active Power and Standby Power Modes

The device is enabled and in the Active Power mode when Chip Select (CS#) is Low. When CS# is high, the device is disabled, but
may still be in an Active Power mode until all program, erase, and write operations have completed. The device then goes into the
Standby Power mode, and power consumption drops to ISB.

Document Number: 002-00497 Rev. *I Page 22 of 90

 S25FL116K/S25FL132K/S25FL164K

5.5 AC Measurement Conditions

Figure 16. Test Setup

Device
Under
Test CL

Table 7. AC Measurement Conditions

Symbol Parameter Min Max Unit
CL Load Capacitance 30 pF
Input Rise and Fall

n
TR, TF 2.4 ns
Times

ig
Input Pulse Voltage 0.2 x VCC to 0.8 VCC V

es
Input Timing Ref Voltage 0.5 VCC V

D
Output Timing Ref
0.5 VCC V

ew
Voltage
rN
Notes
8. Output High-Z is defined as the point where data is no longer driven.
fo

9. Input slew rate: 1.5 V/ns.

10. AC characteristics tables assume clock and data signals have the same slew rate (slope).
ed

Figure 17. Input, Output, and Timing Reference Levels

d

Input Levels Output Levels

en

VCC + 0.4V VCC

m

0.7 x VCC VCC - 0.2V

om

Timing Reference Level

0.5 x VCC
ec

0.3 x VCC 0.2V to 0.4V

R

- 0.5V VSS
ot
N

5.5.1 Capacitance Characteristics

Table 8. Capacitance
Parameter Test Conditions Min Max Unit
CIN Input Capacitance (applies to SCK, CS#) 1 MHz – 8 pF
COUT Output Capacitance (applies to All I/O) 1 MHz – 8 pF

Notes
11. Sampled, not 100% tested.
12. Test conditions TA = 25°C, f = 1.0 MHz.

Document Number: 002-00497 Rev. *I Page 23 of 90

 S25FL116K/S25FL132K/S25FL164K

5.6 Power-Up Timing

Table 9. Power-Up Timing and Voltage Levels

Spec
Parameter Symbol Unit
Min Max
VCC (min) to CS# Low tVSL 10 – µs
Power-Up to Write — Time Delay Before Write Command tPUW 10 – ms
Write Inhibit Threshold Voltage VWI 2.4 – V
Power-Down Time tPD 10.0 – µs
VCC Power-Down Reset Threshold Voltage VCC Low 1.0 – V

Note:
1. These parameters are characterized only.

n
ig
es
Figure 18. Power-Up Timing and Voltage Levels

D
VCC

VCC (max)

ew
Program, Erase, and Write instructions are ignored
CS# must track VCC
rN
VCC (min)
fo

t VSL Read instructions Device is fully

Reset allowed accessible
ed

State
VWI
d
en

t PUW
m
om

Time
ec

Figure 19. Power-Down and Voltage Drop

R

Vcc
ot
N

Vcc
(Max)
No Device Access Allowed

Vcc
(Min)
tVSL Device Read
Allowed
Vcc
(Low)

tPD

Time

Document Number: 002-00497 Rev. *I Page 24 of 90

 S25FL116K/S25FL132K/S25FL164K

5.7 Power-On (Cold) Reset

The device executes a Power-On Reset (POR) process until a time delay of tPUW has elapsed after the moment that VCC rises
above the VWI threshold. See Figure 18 on page 24, Figure 19 on page 24, and Table on page 24. The device must not be selected
(CS# to go high with VCC) until after (tVSL), i.e. no commands may be sent to the device until the end of tVSL.

5.8 AC Electrical Characteristics

Table 10. AC Electrical Characteristics: –40°C to +85°C/105°C at 2.7V to 3.6V

Spec
Description Symbol Alt Min Typ Max Unit
Clock frequency for all SPI commands except for
Read Data command (03h) and Fast Read
FR fC D.C. – 108 MHz
command (0Bh)
2.7 V - 3.6V VCC

n
Clock frequency for Read Data command (03h) fR D.C. – 50 MHz

ig
Clock frequency for all Fast Read commands SIO

es
fFR D.C. – 108 MHz
and MIO

D
Clock Period PSCK 9.25 – – ns

ew
[13]
Clock High, Low Time for fFR tCLH, tCLL tCH, tCL 3.3 – – ns
[13]
Clock High, Low Time for FR tCLH, tCLL tCH, tCL 4.3 – – ns
rN
Clock High, Low Time for fR tCRLH, tCRLL [13] tCH, tCL 6 – – ns
fo

[14]
Clock Rise Time tCLCH tCRT 0.1 – – V/ns
[14]
ed

Clock Fall Time tCHCL tCFT 0.1 – – V/ns

CS# Active Setup Time relative to SCK tSLCH tCSS 5 – – ns
d
en

CS# Not Active Hold Time relative to SCK tCHSL tCSH 5 – – ns

Data In Setup Time tDVCH tSU 2 – – ns
m

Data In Hold Time tCHDX tHD 5 ns

om

– –

CS# Active Hold Time relative to SCK tCHSH tCSS 5 – – ns

ec

CS# Not Active Setup Time relative to SCK tSHCH tCSH 5 – – ns

R

CS# High Time tCS 10 – – ns

ot

CS# Deselect Time (for Array Read -> Array Read) tSHSL1 tCS1 7 – – ns
N

CS# Deselect Time (for Erase or Program -> Read

40 – –
Status Registers) tSHSL2 tCS2 ns
Volatile Status Register Write Time 40 – –

CS# Deselect Time (for Erase or Program ->

tSHSL3 tCS3 130 – – ns
Suspend command)
Output Disable Time tSHQZ [14] tDIS – – 7 ns
Clock Low to Output Valid, 30 pF, 2.7V - 3.6V tCLQV1 tV1 – – 7 ns
Clock Low to Output Valid, 15 pF, 2.7V - 3.6V tCLQV1 tV1 – – 6 ns
Clock Low to Output Valid (for Read ID commands)
tCLQV2 tV2 – – 8.5 ns
2.7V - 3.6V
Output Hold Time tCLQX tHO 2 – – ns
HOLD# Active Setup Time relative to SCK tHLCH – 5 – – ns
HOLD# Active Hold Time relative to SCK tCHHH – 5 – – ns
HOLD# Not Active Setup Time relative to SCK tHHCH – 5 – – ns

Document Number: 002-00497 Rev. *I Page 25 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 10. AC Electrical Characteristics: –40°C to +85°C/105°C at 2.7V to 3.6V (Continued)

Spec
Description Symbol Alt Min Typ Max Unit
HOLD# Not Active Hold Time relative to SCK tCHHL – 5 – – ns
[14]
HOLD# to Output Low-Z tHHQX tLZ – – 7 ns
[14]
HOLD# to Output High-Z tHLQZ tHZ – – 12 ns
Write Protect Setup Time Before CS# Low tWHSL [15] tWPS 20 – – ns
[15]
Write Protect Hold Time After CS# High tSHWL tWPH 100 – – ns
[14]
CS# High to Power-down Mode tDP – – – 3 µs
CS# High to Standby Mode without Electronic
tRES1 [14] – – – 3 µs
Signature Read
CS# High to Standby Mode with Electronic
tRES2 [14] – – – 1.8 µs

n
Signature Read

ig
CS# High to next Command after Suspend tSUS [14] – – – 20 µs

es
[18]
Write Status Registers Time tW – – 2 30 ms

D
[16][17]
Byte Program Time (First Byte) tBP1 – – 15 50 µs

ew
Additional Byte Program Time (After First Byte)
[16][17] tBP2 rN – – 2.5 12 µs

Page Program Time (105°C) [17] tPP – – 0.7 3 ms

Sector Erase Time (4 kB) [17]
fo

tSE – – 50 450 ms
[17]
Block Erase Time (64 kB) tBE2 – – 500 2000 ms
ed

[17]
Chip Erase Time 16 Mb / 32 Mb / 64 Mb tCE – – 11.2 / 32 / 64 64 / 128 / 256 s
d

[14]
End of Reset Instruction to CE# High tRCH 40 ns
en

– – –

CE# High to next Instruction after Reset tRST [14] – 1.5 – – µs

m
om

Notes
13. Clock high + Clock low must be less than or equal to 1/fC.
ec

14. Value guaranteed by design and / or characterization, not 100% tested in production.
15. Only applicable as a constraint for a Write Status Registers command when Status Register Protect 0 (SRP0) bit is set to 1. Or WPSEL bit = 1.
16. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number of bytes programmed.
R

17. All program and erase times are tested using a random data pattern.
18. For 10K Cycles. 85 ms at 100K cycles.
ot
N

5.8.1 Clock Timing

Figure 20. Clock Timing

PSCK

tCH

VIH min
VCC / 2
VIL max

tCRT tCFT
tCL

Document Number: 002-00497 Rev. *I Page 26 of 90

 S25FL116K/S25FL132K/S25FL164K

5.8.2 Input / Output Timing

Figure 21. SPI Single Bit Input Timing

tCS

CS#

tCSH tCSH

tCSS tCSS
SCK

tSU
tHD
SI MSB IN LSB IN

n
SO

ig
es
Figure 22. PI Single Bit Output Timing

D
ew
rN tCS
CS#
fo
SCK

SI
ed

tLZ tHO tV tDIS

d
en

SO MSB OUT LSB OUT

m
om

Figure 23. SPI MIO Timing

tCS
ec

CS#
R

tCSH tCSS
ot
N

tCSS tCSH

SCK

tSU

tHD tLZ tHO tV tDIS

IO MSB IN LSB IN MSB OUT LSB OUT

Document Number: 002-00497 Rev. *I Page 27 of 90

 S25FL116K/S25FL132K/S25FL164K

Figure 24. Hold Timing

CS#

SCK

tHLCH tHHCH tHLCH tHHCH

tCHHL tCHHH tCHHL tCHHH
HOLD#
Hold Condition Hold Condition
Standard Use Non-standard Use

SI_or_IO_(during_input)

tHZ tLZ tHZ tLZ

SO_or_IO_(during_output) A B B C D E

n
ig
Figure 25. WP# Input Timing

es
CS#

D
tWPS tWPH

ew
WP# rN
SCK
fo

SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
ed

SO

Phase
d

Write Status Registers Instruction Input Data

en
m

Figure 26. Software Reset Input Timing

om
ec

tCS2 tRST
R

CS#
ot
N

SCK

tRCH

SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

SO

Phase Software Reset Enable Inst. (66h) Software Reset Instruction (99h) Reset to Next Instr.

Document Number: 002-00497 Rev. *I Page 28 of 90

 S25FL116K/S25FL132K/S25FL164K

6. Physical Interface
6.1 Connection Diagrams

6.1.1 SOIC 8
Figure 27. 8-Pin Plastic Small Outline Package (SO)

CS# 1 8 VCC

SO/IO1 2 7 HOLD#/IO3

WP#/IO2 3 6 SCK

VSS 4 5 SI/IO0

n
ig
es
6.1.2 SOIC 16 — S25FL164K

D
Figure 28. 16-Pin Plastic Small Outline Package (SO)

ew
HOLD#/IO3 1 16 SCK
rN
VCC 2 15 SI/IO0
fo
ed

DNU 3 14 DNU
d

DNU 4 13 DNU
en

DNU 5 12 DNU
m

DNU 6 11 DNU
om

CS# 7 10 VSS
ec

SO/IO1 8 9 WP#/IO2
R
ot

6.1.3 WSON 8
N

Figure 29. 8-Contact WSON (5 mm x 6 mm) Package / 8-Contact USON (4 mm x 4 mm) Package

CS# 1 8 VCC

SO/IO1 2 7 HOLD#/IO3
WSON
WP#/IO2 3 6 SCK

VSS 4 5 SI/IO0

Document Number: 002-00497 Rev. *I Page 29 of 90

 S25FL116K/S25FL132K/S25FL164K

6.1.4 FAB024 24-Ball BGA

Figure 6.1 24-Ball BGA Package, 5x5 Ball Configuration, Top View
1 2 3 4 5

A
NC NC RFU NC

B
DNU SCK VSS VCC NC

C
DNU CS# RFU WP#/IO2 NC

n
DNU SO/IO1 SI/IO0 HOLD#/IO3 NC

ig
es
E
NC NC NC RFU NC

D
ew
6.1.5 FAC024 24-Ball BGA Package
rN
Figure 6.2 24-Ball BGA Package, 6x4 Ball Configuration, Top View
fo

1 2 3 4
ed

A
d

NC NC NC RFU
en
m

B
DNU SCK VSS VCC
om

C
ec

DNU CS# RFU WP#/IO2

R

D
ot

DNU SO/IO1 SI/IO0 HOLD#/IO3

N

E
NC NC NC RFU

NC NC NC NC

Note
19. Signal connections are in the same relative positions as FAB024 BGA, allowing a single PCB footprint to use either package.

6.1.6 Special Handling Instructions for FBGA Packages

Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and / or data
integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.

Document Number: 002-00497 Rev. *I Page 30 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2 Physical Diagrams

6.2.1 SOA008 — 8-Lead Plastic Small Outline Package (150-mils Body Width)

n
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D
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d ed

DIMENSIONS NOTES:
en

SYMBOL 1. ALL DIMENSIONS ARE IN MILLIMETERS.

MIN. NOM. MAX.
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
A - - 1.75
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
m

A1 0.10 - 0.25 MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
om

A2 1.32 - - INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
b 0.31 - 0.51 D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
b1 0.28 - 0.48 D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
ec

c 0.17 - 0.25 EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
c1 0.17 - 0.23 THE PLASTIC BODY.
R

D 4.90 BSC 5. DATUMS A AND B TO BE DETERMINED AT DATUM H.

6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
ot

E 6.00 BSC PACKAGE LENGTH.

E1 3.90 BSC 7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
N

0.25 mm FROM THE LEAD TIP.

e 1.27 BSC
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
L 0.40 - 0.89 PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
L1 1.04 REF MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
LOWER RADIUS OF THE LEAD FOOT.
L2 0.25 BSC 9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
N 8 IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
h 0.25 - 0.50 SEATING PLANE.
0 0° - 8°
01 5° - 15°
02 0° REF

Document Number: 002-00497 Rev. *I Page 31 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2.2 SOC008 — 8-Lead Plastic Small Outline Package (208-mils Body Width)

n
ig
es
D
ew
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ed

DIMENSIONS NOTES:
SYMBOL 1. ALL DIMENSIONS ARE IN MILLIMETERS.
d

MIN. NOM. MAX.

2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
en

A 1.75 - 2.16
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
A1 0.05 - 0.25 MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
m

A2 1.70 - 1.90 INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
b 0.36 - 0.48 D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
om

4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
b1 0.33 - 0.46 D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
c 0.19 - 0.24 EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
ec

FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
c1 0.15 - 0.20 THE PLASTIC BODY.
D 5.28 BSC 5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
R

6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED

E 8.00 BSC PACKAGE LENGTH.
ot

E1 5.28 BSC 7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
0.25 mm FROM THE LEAD TIP.
e 1.27 BSC
N

8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR

L 0.51 - 0.76 PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
L1 1.36 REF MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
LOWER RADIUS OF THE LEAD FOOT.
L2 0.25 BSC 9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
N 8 IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
0 0° - 8° SEATING PLANE.
01 5° - 15°
02 0-8° REF

Document Number: 002-00497 Rev. *I Page 32 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2.3 SO3016 — 16-Lead Plastic Wide Outline Package (300-mils Body Width)

0.20 C A-B

0.10 C D
2X
0.33 C

0.25 M C A-B D

0.10 C

0.10 C

n
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D
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ed

DIMENSIONS NOTES:
SYMBOL
MIN. NOM. MAX. 1. ALL DIMENSIONS ARE IN MILLIMETERS.
d

2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.

en

A 2.35 - 2.65
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
A1 0.10 - 0.30 MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
m

A2 2.05 - 2.55 INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
om

b 0.31 - 0.51
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
b1 0.27 - 0.48 D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
c 0.20
ec

- 0.33 FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
THE PLASTIC BODY.
c1 0.20 - 0.30 5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
R

D 10.30 BSC 6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
PACKAGE LENGTH.
E 10.30 BSC
ot

7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
0.25 mm FROM THE LEAD TIP.
E1 7.50 BSC
N

8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR

e 1.27 BSC PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT

L MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE

0.40 - 1.27 LOWER RADIUS OF THE LEAD FOOT.
L1 1.40 REF 9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
L2 0.25 BSC 10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
N 16 SEATING PLANE.

h 0.25 - 0.75
0 0° - 8°
01 5° - 15°
02 0° - -

Document Number: 002-00497 Rev. *I Page 33 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2.4 WND008 — 8-Contact WSON 5 mm  6 mm

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D
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d ed
en
m
om

NOTES:
DIMENSIONS
ec

SYMBOL 1. DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994.

MIN. NOM. MAX.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
R

e 1.27 BSC.
3. N IS THE TOTAL NUMBER OF TERMINALS.
N 8 4
ot

DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED

ND 4
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
N

L 0.55 0.60 0.65

THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
b 0.35 0.40 0.45
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
D2 3.90 4.00 4.10 ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
5
E2 3.30 3.40 3.50 6. MAX. PACKAGE WARPAGE IS 0.05mm.
D 5.00 BSC 7. MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS.
E 6.00 BSC 8 PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
A 0.70 0.75 0.80 9 BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
A1 0.00 0.02 0.05 SLUG AS WELL AS THE TERMINALS.
A3 0.20 REF
10 A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT.
K 0.20 MIN.

Document Number: 002-00497 Rev. *I Page 34 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2.5 UNF008 — 8-Contact USON 4 mm x 4 mm

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d
en

NOTES:
DIMENSIONS
m

SYMBOL 1. ALL DIMENSIONS ARE IN MILLIMETERS.

MIN. NOM. MAX.
om

2. N IS THE TOTAL NUMBER OF TERMINALS.

e 0.80 BSC.
3. DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
N 8
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
ec

ND 4
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
L 0.35 0.40 0.45
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
R

b 0.25 0.30 0.35

4. ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
D2 2.20 2.30 2.40
ot

5. PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.

E2 2.90 3.00 3.10
6. COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
N

D 4.00 BSC
SLUG AS WELL AS THE TERMINALS.
E 4.00 BSC 7. JEDEC SPECIFICATION NO. REF: N/A
A 0.50 0.55 0.60
A1 0.00 0.035 0.05
A3 0.152 REF
K 0.20 - -

Document Number: 002-00497 Rev. *I Page 35 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2.6 FAB024 — 24-Ball Ball Grid Array (8 mm  6 mm) Package

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DIMENSIONS NOTES:
SYMBOL
MIN. NOM. MAX.
d

1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.

A - - 1.20
en

2. ALL DIMENSIONS ARE IN MILLIMETERS.

A1 0.20 - -
3. BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
m

D 8.00 BSC
E 6.00 BSC 4. e REPRESENTS THE SOLDER BALL GRID PITCH.
om

D1 4.00 BSC 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
E1 4.00 BSC SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
ec

MD 5 N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
ME 5
R

6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE

N 24
PARALLEL TO DATUM C.
b 0.35 0.40 0.45
ot

eE 1.00 BSC 7 "SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
N

eD 1.00 BSC POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.

SD 0.00 BSC WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
SE 0.00 BSC
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND

"SE" = eE/2.

8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.

9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,

METALLIZED MARK INDENTATION OR OTHER MEANS.

Document Number: 002-00497 Rev. *I Page 36 of 90

 S25FL116K/S25FL132K/S25FL164K

6.2.7 FAC024 — 24-Ball Ball Grid Array (8 mm  6 mm) Package

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NOTES:
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DIMENSIONS
SYMBOL
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MIN. NOM. MAX. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
A - - 1.20 2. ALL DIMENSIONS ARE IN MILLIMETERS.
m

A1 0.25 - -
3. BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
D 8.00 BSC
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4. e REPRESENTS THE SOLDER BALL GRID PITCH.

E 6.00 BSC
D1 5.00 BSC 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
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E1 3.00 BSC SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
MD 6 N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
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ME 4 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE

N 24
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PARALLEL TO DATUM C.
b 0.35 0.40 0.45
N

7 "SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
eE 1.00 BSC
eD POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
1.00 BSC
SD 0.50 BSC WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.

SE 0.50 BSC WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND

"SE" = eE/2.

8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.

9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,

METALLIZED MARK INDENTATION OR OTHER MEANS.

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 S25FL116K/S25FL132K/S25FL164K

7. Software Interface
This section discusses the features and behaviors most relevant to host system software that interacts with S25FL1-K memory
devices.

8. Address Space Maps

8.1 Overview
Many commands operate on the main flash memory array. Some commands operate on address spaces separate from the main
flash array. Each separate address space uses the full 24-bit address but may only define a small portion of the available address
space.

8.2 Flash Memory Array

The main flash array is divided into erase units called sectors. The sectors are uniform 4 kbytes in size.
S25FL116K Main Memory Address Map

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Address Range
Sector Size (kbyte) Sector Count Sector Range (Byte Address) Notes

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SA0 000000h-000FFFh Sector Starting Address

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4 512 : : —

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SA511 1FF000h-1FFFFFh Sector Ending Address
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S25FL132K Main Memory Address Map

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Address Range
Sector Size (kbyte) Sector Count Sector Range (Byte Address) Notes
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SA0 000000h-000FFFh
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Sector Starting Address

4 1024 : : —
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SA1023 3FF000h-3FFFFFh Sector Ending Address

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S25FL164K Main Memory Address Map

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Address Range
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Sector Size (kbyte) Sector Count Sector Range (Byte Address) Notes
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SA0 000000h-000FFFh Sector Starting Address

4 2048 : : —
SA2047 7FF000h-7FFFFFh Sector Ending Address

Note: These are condensed tables that use a couple of sectors as references. There are address ranges that are not explicitly listed.
All 4-kB sectors have the pattern XXX000h-XXXFFFh.

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 S25FL116K/S25FL132K/S25FL164K

8.3 Security Registers

The S25FL1-K provides four 256-byte Security Registers. Each register can be used to store information that can be permanently
protected by programming One Time Programmable (OTP) lock bits in Status Register-2.
Register 0 is used by Cypress to store and protect the Serial Flash Discoverable Parameters (SFDP) information that is also
accessed by the Read SFDP command. See Section 8.4.
The three additional Security Registers can be erased, programmed, and protected individually. These registers may be used by
system manufacturers to store and permanently protect security or other important information separate from the main memory
array.

Table 11. Security Register Addresses

Security Register Address
0 (SFDP) 000000h - 0000FF
1 001000h - 0010FF

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2 002000h - 0020FF

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3 003000h - 0030FF

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8.4 Security Register 0 — Serial Flash Discoverable Parameters (SFDP — JEDEC JESD216B)

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This document defines the Serial Flash Discoverable Parameters (SFDP) revision B data structure for S25FL1-K family.
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These data structure values are an update to the earlier revision SFDP data structure in the S25FL1-K family devices.
The Read SFDP (RSFDP) command (5Ah) reads information from a separate flash memory address space for device identification,
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feature, and configuration information, in accord with the JEDEC JESD216B standard for Serial Flash Discoverable Parameters.
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The SFDP data structure consists of a header table that identifies the revision of the JESD216 header format that is supported and
provides a revision number and pointer for each of the SFDP parameter tables that are provided. The parameter tables follow the
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SFDP header. However, the parameter tables may be placed in any physical location and order within the SFDP address space.
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The tables are not necessarily adjacent nor in the same order as their header table entries.
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The SFDP header points to the following parameter tables:

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 Basic Flash
❐ This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.
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 Sector Map
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❐ This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.
ot

The physical order of the tables in the SFDP address space is: SFDP Header, Cypress Vendor Specific, Basic Flash, and Sector
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Map.
The SFDP address space is programmed by Cypress and read-only for the host system.

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 S25FL116K/S25FL132K/S25FL164K

8.4.1 Serial Flash Discoverable Parameters (SFDP) Address Map

The SFDP address space has a header starting at address zero that identifies the SFDP data structure and provides a pointer to
each parameter. One Basic Flash parameter is mandated by the JEDEC JESD216B standard.
Table 12. SFDP Overview Map — Security Register 0
Byte Address Description
0000h Location zero within JEDEC JESD216B SFDP space – start of SFDP header
,,, Remainder of SFDP header followed by undefined space
0080h Start of SFDP parameter
... Remainder of SFDP JEDEC parameter followed by undefined space
00BFh End of SFDP space
00C0h to 00F7h Reserved space
00F8h to 00FFh Unique ID

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8.4.2 SFDP Header Field Definitions

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 S25FL116K/S25FL132K/S25FL164K

Table 13. SFDP Header

SFDP Byte SFDP Dword
Address Name Data Description
This is the entry point for Read SFDP (5Ah) command i.e. location zero within
00h 53h SFDP space
ASCII “S”
SFDP Header
01h 1st DWORD 46h ASCII “F”
02h 44h ASCII “D”
03h 50h ASCII “P”
SFDP Minor Revision (06h = JEDEC JESD216 Revision B)
– This revision is backward compatible with all prior minor revisions. Minor
revisions are changes that define previously reserved fields, add fields to the end,

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or that clarify definitions of existing fields. Increments of the minor revision value

ig
indicate that previously reserved parameter fields may have been assigned a new

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definition or entire Dwords may have been added to the parameter table.
However, the definition of previously existing fields is unchanged and therefore

D
04h 06h
remain backward compatible with earlier SFDP parameter table revisions.

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Software can safely ignore increments of the minor revision number, as long as
SFDP Header only those parameters the software was designed to support are used i.e.
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2nd DWORD previously reserved fields and additional Dwords must be masked or ignored. Do
not do a simple compare on the minor revision number, looking only for a match
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with the revision number that the software is designed to handle. There is no
problem with using a higher number minor revision.
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SFDP Major Revision

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05h 01h – This is the original major revision. This major revision is compatible with all
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SFDP reading and parsing software.

06h 03h Number of Parameter Headers (zero based, 03h = 4 parameters)
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07h FFh Unused

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08h 00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
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Parameter Minor Revision (00h = JESD216)

– This older revision parameter header is provided for any legacy SFDP reading
R

and parsing software that requires seeing a minor revision 0 parameter header.
09h Parameter 00h
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SFDP software designed to handle later minor revisions should continue reading
Header
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parameter headers looking for a higher numbered minor revision that contains
0 additional parameters for that software revision.
1st DWORD
Parameter Major Revision (01h = The original major revision - all SFDP software
0Ah 01h
is compatible with this major revision.
Parameter Table Length (in double words = Dwords = 4-byte units) 09h = 9
0Bh 09h
Dwords
Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
0Ch 80h
Parameter JEDEC Basic SPI Flash parameter byte offset = 80h
0Dh Header 00h Parameter Table Pointer Byte 1
0
0Eh 2nd DWORD 00h Parameter Table Pointer Byte 2
0Fh FFh Parameter ID MSB (FFh = JEDEC defined legacy Parameter ID)

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 S25FL116K/S25FL132K/S25FL164K

Table 13. SFDP Header (Continued)

SFDP Byte SFDP Dword
Address Name Data Description
10h EFh Parameter ID LSB (EFh = Winbond Legacy SPI Flash Parameter)
Parameter Minor Revision (00h = JESD216)
– This older revision parameter header is provided for any legacy SFDP reading
and parsing software that requires seeing a minor revision 0 parameter header.
11h Parameter 00h
SFDP software designed to handle later minor revisions should continue reading
Header parameter headers looking for a later minor revision that contains additional
1 parameters.
1st DWORD
Parameter Major Revision (01h = The original major revision – all SFDP software
12h 01h
is compatible with this major revision.
Parameter Table Length (in double words = Dwords = 4-byte units) 04h = 4
13h 04h
Dwords

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Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
14h 80h
Parameter JEDEC Basic SPI Flash parameter byte offset = 0080h address

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15h Header 00h Parameter Table Pointer Byte 1

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1
16h 2nd DWORD 00h Parameter Table Pointer Byte 2

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17h FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
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18h 00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
19h Parameter 06h Parameter Minor Revision (06h = JESD216 Revision B)
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Header Parameter Major Revision (01h = The original major revision - all SFDP software
1Ah 01h
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2 is compatible with this major revision.

1st DWORD
Parameter Table Length (in double words = Dwords = 4-byte units) 10h = 16
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1Bh 10h
Dwords
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Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)

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1Ch 80h
Parameter JEDEC Basic SPI Flash parameter byte offset = 0080h address
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1Dh Header 00h Parameter Table Pointer Byte 1

2
1Eh 00h Parameter Table Pointer Byte 2
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2nd DWORD
1Fh FFh Parameter ID MSB (FFh = JEDEC defined Parameter)
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Parameter ID LSB (Cypress Vendor Specific ID parameter)

20h
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01h
Legacy Manufacturer ID 01h = AMD / Cypress
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21h Parameter 01h Parameter Minor Revision (01h = ID updated with SFDP Rev B table)
Header
3 Parameter Major Revision (01h = The original major revision - all SFDP software
22h 01h
1st DWORD that recognizes this parameter’s ID is compatible with this major revision.
Parameter Table Length (in double words = Dwords = 4-byte units) 00h not
23h 00h
implemented
24h 00h Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
Parameter
25h Header 00h Parameter Table Pointer Byte 1
26h 3 00h Parameter Table Pointer Byte 2
2nd DWORD
27h 01h Parameter ID MSB (01h = JEDEC JEP106 Bank Number 1)

8.4.3 JEDEC SFDP Basic SPI Flash Parameter

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 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B

SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Start of SFDP JEDEC parameter
Bits 7:5 = unused = 111b
Bit 4:3 = 05h is volatile status register write instruction and status register
00h E5h
is default non-volatile= 00b
Bit 2 = Program Buffer > 64 bytes = 1
Bits 1:0 = Uniform 4-kB erase is supported through out the device = 01b
01h 20h Bits 15:8 = Uniform 4-kB erase instruction = 20h
Bit 23 = Unused = 1b
JEDEC Basic Flash Bit 22 = Supports QOR Read (1-1-4), Yes = 1b
Bit 21 = Supports QIO Read (1-4-4),Yes =1b

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Parameter Dword-1
Bit 20 = Supports DIO Read (1-2-2), Yes = 1b

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Bit19 = Supports DDR, No= 0 b

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02h F1h Bit 18:17 = Number of Address Bytes 3 only = 00b
Bit 16 = Supports SIO and DIO Yes = 1b

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Binary Field: 1-1-1-1-0-00-1
Nibble Format: 1111_0001
Hex Format: F1
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03h FFh Bits 31:24 = Unused = FFh
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04h FFh
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05h FFh Density in bits, zero based,

06h JEDEC Basic Flash FFh 16 Mb = 00FFFFFFh
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Parameter Dword-2 32 Mb = 01FFFFFFh

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00h 16Mb 64 Mb = 03FFFFFFh

07h 01h 32Mb
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03h 64Mb
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Bits 7:5 = number of QIO (1-4-4)Mode cycles = 010b

08h 44h Bits 4:0 = number of Fast Read QIO Dummy cycles = 00100b for default
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latency code
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09h JEDEC Basic Flash EBh Fast Read QIO (1-4-4)instruction code
Parameter Dword-3
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Bits 23:21 = number of Quad Out (1-1-4) Mode cycles = 000b

0Ah 08h Bits 20:16 = number of Quad Out Dummy cycles = 01000b for default
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latency code
0Bh 6Bh Quad Out (1-1-4)instruction code
Bits 7:5 = number of Dual Out (1-1-2)Mode cycles = 000b
0Ch 08h Bits 4:0 = number of Dual Out Dummy cycles = 01000b for default
latency code
0Dh JEDEC Basic Flash 3Bh Dual Out (1-1-2) instruction code
Parameter Dword-4 Bits 23:21 = number of Dual I/O Mode cycles = 100b
0Eh 80h Bits 20:16 = number of Dual I/O Dummy cycles = 00000b for default
latency code
0Fh BBh Dual I/O instruction code

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 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Bits 7:5 RFU = 111b
Bit 4 = QPI (4-4-4) fast read commands not supported = 0b
10h EEh
Bits 3:1 RFU = 111b
JEDEC Basic Flash Bit 0 = Dual All not supported = 0b
11h Parameter Dword-5 FFh Bits 15:8 = RFU = FFh
12h FFh Bits 23:16 = RFU = FFh
13h FFh Bits 31:24 = RFU = FFh
14h FFh Bits 7:0 = RFU = FFh
15h FFh Bits 15:8 = RFU = FFh
JEDEC Basic Flash

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Parameter Dword-6 Bits 23:21 = number of Dual All Mode cycles = 111b
16h FFh

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Bits 20:16 = number of Dual All Dummy cycles = 11111b

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17h FFh Dual All instruction code

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18h FFh Bits 7:0 = RFU = FFh

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19h FFh Bits 15:8 = RFU = FFh
JEDEC Basic Flash Bits 23:21 = number of QPI Mode cycles = 111b not supported
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1Ah Parameter Dword-7 FFh Bits 20:16 = number of QPI Dummy cycles = 11111b for default latency
code
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1Bh FFh QPI instruction code “Not supported FF”

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1Ch 0Ch Sector type 1 size 2N Bytes = 4 kB = 0Ch (for Uniform 4 kB)
1Dh 20h Sector type 1 instruction
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JEDEC Basic Flash

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1Eh Parameter Dword-8 10h Sector type 2 size 2N Bytes = 64 kB = 0Fh (for Uniform 64 kB)
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1Fh D8h Sector type 2 instruction

Sector type 3 size 2N Bytes = not supported = 00h
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20h 00h
21h JEDEC Basic Flash FFh Sector type 3 instruction = not supported = FFh
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22h Parameter Dword-9 00h Sector type 4 size 2N Bytes = not supported = 00h
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23h FFh Sector type 4 instruction = not supported = FFh

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 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
Bits 31:30 = Sector Type 4 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b
Bits 29:25 = Sector Type 4 Erase, Typical time count = RFU = 11111b (typ
erase time = (count +1) * units) = RFU =11111
Bits 24:23 = Sector Type 3 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b
Bits 22:18 = Sector Type 3 Erase, Typical time count = 00100b (typ erase
time = (count +1) * units) = RFU =11111
Bits 17:16 = Sector Type 2 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = 16 ms = 01b
Bits 15:11 = Sector Type 2 Erase, Typical time count = 11110b (typ erase
JEDEC Basic Flash
24h 42h time = (count +1) * units) = 31*16 ms = 496 ms
Parameter Dword-10

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Bits 10:9 = Sector Type 1 Erase, Typical time units (00b: 1 ms, 01b: 16

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ms, 10b: 128 ms, 11b: 1 s) = 16ms = 01b

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Bits 8:4 = Sector Type 1 Erase, Typical time count = 00100b (typ erase
time = (count +1) * units) = 5*16 ms = 80 ms

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Bits 3:0 = Count = (Max Erase time / (2 * Typical Erase time))- 1 = 0010b
Multiplier from typical erase time to maximum erase time = 6x multiplier

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Max Erase time = 2*(Count +1)*Typ Erase time
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Binary Fields: 11-11111-11-11111-01-11110-01-00100-0010
Nibble Format: 1111_1111_1111_1101_1111_0010_0100_0010
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Hex Format: FF_FD_F2_42

25h F2h –
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26h FDh –
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27h FFh
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–
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 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
28h 81h Bits 23 = Byte Program Typical time, additional byte units (0b:1 µs, 1b:8
µs) = 1 µs = 0b
29h 6Ah
Bits 22:19 = Byte Program Typical time, additional byte count,
(count+1)*units, count = 0010b, (typ Program time = (count +1) * units) =
3*1 µs =3 µs
Bits 18 = Byte Program Typical time, first byte units (0b:1 µs, 1b:8 µs) = 8
µs = 1b
Bits 17:14 = Byte Program Typical time, first byte count, (count+1)*units,
count = 0001b, (typ Program time = (count +1) * units) = 2*8 µs = 16 µs
Bits 13 = Page Program Typical time units (0b:8 µs, 1b:64 µs) = 64 µs =
1b
Bits 12:8 = Page Program Typical time count, (count+1)*units, count =

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01010b, (typ Program time = (count +1) * units) = 11*64 µs = 704 µs
2Ah 14h

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Bits 7:4 = N = 1000b, Page size= 2N = 256B page

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Bits 3:0 = Count = 0001b = (Max Page Program time / (2 * Typ Page
Program time))- 1

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Multiplier from typical Page Program time to maximum Page Program
time = 4x multiplier

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Max Page Program time = 2*(Count +1)*Typ Page Program time
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Binary Fields: 0-0010-1-0001-1-01010-1000-0001
JEDEC Basic Flash Nibble Format: 0001_0100_0110_1010_1000_0001
Parameter Dword-11
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Hex Format: 14_6A_81

16 Mb = 1100_0010b = C2h
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Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
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10b: 4 s, 11b: 64 s) = 4s = 10b

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Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =

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00010b, (typ Program time = (count +1) * units) = 3*4s = 12S

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32 Mb = 1100_0111b = C7h
C2h 16Mb Bit 31 Reserved = 1b
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Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
2Bh C7h 32Mb
10b: 4 s, 11b: 64 s) = 4s = 10b
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CFh 64Mb Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
00111b, (typ Program time = (count +1) * units) = 8*4s = 32s
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64 Mb = 1100_1111b = CFh
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
01111b, (typ Program time = (count +1) * units) = 16*4S = 64S

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 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
2Ch CCh Bit 31 = Suspend and Resume supported = 0b
Bits 30:29 = Suspend in-progress erase max latency units (00b: 128ns,
2Dh 63h
01b: 1us, 10b: 8 µs, 11b: 64 µs) = 1 µs= 01b
2Eh 16h Bits 28:24 = Suspend in-progress erase max latency count = 10011b,
max erase suspend latency = (count +1) * units = 20*1 µs = 20 µs
Bits 23:20 = Erase resume to suspend interval count = 0001b, interval =
(count +1) * 64 µs = 2 * 64 µs = 128 µs
Bits 19:18 = Suspend in-progress program max latency units (00b:
128ns, 01b: 1us, 10b: 8 µs, 11b: 64 µs) = 1 µs= 01b
Bits 17:13 = Suspend in-progress program max latency count = 10011b,
max erase suspend latency = (count +1) * units = 20*1 µs = 20 µs
Bits 12:9 = Program resume to suspend interval count = 0001b, interval =

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(count +1) * 64 µs = 2 * 64 µs = 128 µs

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Bit 8 = RFU = 1b

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Bits 7:4 = Prohibited operations during erase suspend
= xxx0b: May not initiate a new erase anywhere (erase nesting not
JEDEC Basic Flash

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permitted)
Parameter Dword-12
+ xx0xb: May not initiate a page program anywhere

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2Fh 33h + x1xxb: May not initiate a read in the erase suspended sector size
+ 1xxxb: The erase and program restrictions in bits 5:4 are sufficient
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= 1100b
Bits 3:0 = Prohibited Operations During Program Suspend
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= xxx0b: May not initiate a new erase anywhere (erase nesting not
permitted)
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+ xx0xb: May not initiate a new page program anywhere (program

nesting not permitted)
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+ x1xxb: May not initiate a read in the program suspended page size
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+ 1xxxb: The erase and program restrictions in bits 1:0 are sufficient
= 1100b
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Binary Fields: 0-01-10011-0001-01-10011-0001-1-1100-1100

Nibble Format: 0011_0011_0001_0110_0110_0011_1100_1100
Hex Format: 33_16_63_CC
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30h 7Ah
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Bits 31:24 = Erase Suspend Instruction = 75h

31h JEDEC Basic Flash 75h Bits 23:16 = Erase Resume Instruction = 7Ah
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32h Parameter Dword-13 7Ah Bits 15:8 = Program Suspend Instruction = 75h
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Bits 7:0 = Program Resume Instruction = 7Ah

33h 75h
34h F7h Bit 31 = Deep Power-Down Supported = 0
Bits 30:23 = Enter Deep Power-Down Instruction = B9h
35h A2h
Bits 22:15 = Exit Deep Power-Down Instruction = ABh
36h D5h Bits 14:13 = Exit Deep Power-Down to next operation delay units = (00b:
128 ns, 01b: 1 µs, 10b: 8 µs, 11b: 64 µs) = 1 µs = 01b
Bits 12:8 = Exit Deep Power-Down to next operation delay count =
00010b, Exit Deep Power-Down to next operation delay =
(count+1)*units = 3*1 µs=3 µs
JEDEC Basic Flash Bits 7:4 = RFU = 1111b
Parameter Dword-14 Bit 3:2 = Status Register Polling Device Busy
= 01b: Legacy status polling supported = Use legacy polling by reading
37h 5Ch the Status Register with 05h instruction and checking WIP bit[0]
(0=ready; 1=busy).
Bits 1:0 = RFU = 11b

Binary Fields: 0-10111001-10101011-01-00010-1111-01-11

Nibble Format: 0101_1100_1101_0101_1010_0010_1111_0111
Hex Format: 5C_D5_A2_F7

Document Number: 002-00497 Rev. *I Page 47 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
38h 00h Bits 31:24 = RFU = FFh
Bit 23 = Hold and WP Disable = not supported = 0b
39h F6h
Bits 22:20 = Quad Enable Requirements
3Ah 59h = 101b: QE is bit 1 of the status register 2. Status register 1 is read using
Read Status instruction 05h. Status register 2 is read using instruction
35h. QE is set via Write Status instruction 01h with two data bytes where
bit 1 of the second byte is one. It is cleared via Write Status with two data
bytes where bit 1 of the second byte is zero.
Bits 19:16 0-4-4 Mode Entry Method
= xxx1b: Mode Bits[7:0] = A5h Note: QE must be set prior to using this
mode
+ x0xxb: Mode Bits[7:0] = Axh

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+ 1xxxb: RFU

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JEDEC Basic Flash = 1001b

es
Parameter Dword-15 Bits 15:10 0-4-4 Mode Exit Method
= xx_xxx1b: Mode Bits[7:0] = 00h will terminate this mode at the end of
3Bh FFh

D
the current read operation
+ xx_1xxxb: Input Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. This will

ew
terminate the mode prior to the next read operation.
+ 11_x1xx: RFU
rN
= 111101
Bit 9 = 0-4-4 mode supported = 1
fo

Bits 8:4 = 4-4-4 mode enable sequences = 0_0000b: not supported

Bits 3:0 = 4-4-4 mode disable sequences = 0000b: not supported
ed

Binary Fields: 11111111-0-101-1001-111101-1-00000-0000

d

Nibble Format: 1111_1111_0101_1001_1111_0110_0000_0000

en

Hex Format: FF_59_F6_00

m
om
ec
R
ot
N

Document Number: 002-00497 Rev. *I Page 48 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 14. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address SFDP Dword Name Data Description
3Ch E8h Bits 31:24 = Enter 4-Byte Addressing
= xxxx_xxx1b:issue instruction B7 (preceding write enable not required
3Dh 10h
+ xx1x_xxxxb: Supports dedicated 4-byte address instruction set.
3Eh C0h Consult vendor data sheet for the instruction set definition or look for 4-
byte Address Parameter Table.
+ 1xxx_xxxxb: Reserved
= 10000000b not supported
Bits 23:14 = Exit 4-byte Addressing
= xx_xxxx_xxx1b:issue instruction E9h to exit 4-byte address mode
(Write enable instruction 06h is not required)
+ xx_xx1x_xxxxb: Hardware reset
+ xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD)

n
+ xx_1xxx_xxxxb: Power cycle

ig
+ x1_xxxx_xxxxb: Reserved

es
+ 1x_xxxx_xxxxb: Reserved
= 11_0000_0000b not supported

D
Bits 13:8 = Soft Reset and Rescue Sequence Support
JEDEC Basic Flash = x1_xxxxb: issue reset enable instruction 66h, then issue reset

ew
Parameter Dword-16 instruction 99h. The reset enable, reset sequence may be issued on 1,2,
or 4 wires depending on the device operating mode
rN
3Fh 80h = 01_0000b
Bit 7 = RFU = 1
fo

Bits 6:0 = Volatile or nonvolatile Register and Write Enable Instruction for
Status Register 1
ed

= xxx_1xxxb: nonvolatile/Volatile status register 1 powers-up to last

written value in the nonvolatile status register, use instruction 06h to
d

enable write to nonvolatile status register. Volatile status register may be

en

activated after power-up to override the nonvolatile status register, use

instruction 50h to enable write and activate the volatile status register.
m

+ x1x_xxxxb: Reserved
om

+ 1xx_xxxxb: Reserved
= 1101000b
ec

Binary Fields: 10000000-1100000000-010000-1-1101000

Nibble Format: 1000_0000_1100_0000_0001_0000_1110_1000
R

Hex Format: 80_C0_10_E8

ot
N

Document Number: 002-00497 Rev. *I Page 49 of 90

 S25FL116K/S25FL132K/S25FL164K

8.5 Status Registers

Status Register-1 (SR1) and Status Register-2 (SR2) can be used to provide status on the availability of the flash memory array, if
the device is write enabled or disabled, the state of write protection, Quad SPI setting, Security Register lock status, and Erase /
Program Suspend status.
SR1 and SR2 contain nonvolatile bits in locations SR1[7:2] and SR2[6:0] that control sector protection, OTP Register Protection,
Status Register Protection, and Quad mode. Bit locations SR2[7], SR1[1], and SR1[0] are read only volatile bits for suspend, write
enable, and busy status; these are updated by the memory control logic. The SR1[1] write enable bit is set only by the Write Enable
(06h) command and cleared by the memory control logic when an embedded operation is completed.
Write access to the nonvolatile Status Register bits is controlled by the state of the nonvolatile Status Register Protect bits SR1[7]
and SR2[0] (SRP0, SRP1), the Write Enable command (06h) preceding a Write Status Registers command, and while Quad mode
is not enabled, the WP# pin.
A volatile version of bits SR2[6], SR2[1], and SR1[7:2] that control sector protection and Quad Mode are used to control the behavior
of these features after power up. During power up or software reset, these volatile bits are loaded from the nonvolatile version of the
Status Register bits. The Write Enable for Volatile Status Register (50h) command can be used to write these volatile bits when the

n
command is followed by a Write Status Registers (01h) command. This gives more flexibility to change the system configuration and

ig
memory protection schemes quickly without waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status

es
Register nonvolatile bits.

D
Write access to the volatile SR1 and SR2 Status Register bits is controlled by the state of the nonvolatile Status Register Protect bits
SR1[7] and SR2[0] (SRP0, SRP1), the Write Enable for Volatile Status Register command (50h) preceding a Write Status Registers

ew
command, and while Quad mode is not enabled, the WP# pin. rN
Status Register-3 (SR3) is used to configure and provide status on the variable read latency, and Quad IO wrapped read features.
Write access to the volatile SR3 Status Register bits is controlled by Write Enable for Volatile Status Register command (50h)
fo

preceding a Write Status Register command. The SRP bits do not protect SR3.
ed

Table 15. Status Register-1 (SR1)

d
en

Field
Bits Name Function Type Default State Description
m

0 = WP# input has no effect or Power Supply Lock

om

Status Down mode

7 SRP0 Register 0 1 = WP# input can protect the Status Register or OTP
ec

Protect 0 Lock Down

See Table on page 58.
R

0 = BP2-BP0 protect 64-kB blocks

ot

Sector / Block 1 = BP2-BP0 protect 4-kB sectors

6 SEC 0
Protect See Table 20 on page 54 and Table 21 on page 55 for
N

Nonvolatile and protection ranges.

Volatile versions
0 = BP2-BP0 protect from the Top down
Top / Bottom 1 = BP2-BP0 protect from the Bottom up
5 TB 0
Protect See Table 20 on page 54 and Table 21 on page 55 for
protection ranges.
4 BP2 0
000b = No protection
Block Protect
3 BP1 0 See Table 20 on page 54 and Table 21 on page 55 for
Bits
protection ranges.
2 BP0 0
0 = Not Write Enabled, no embedded operation can
Write Enable start
1 WEL Volatile, Read only 0
Latch
1 = Write Enabled, embedded operation can start
Embedded 0 = Not Busy, no embedded operation in progress
0 BUSY Operation Volatile, Read only 0
Status 1 = Busy, embedded operation in progress

Document Number: 002-00497 Rev. *I Page 50 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 16. Status Register-2 (SR2)

Bits Field Name Function Type Default State Description
Suspend 0 = Erase / Program not suspended
7 SUS Volatile, Read Only 0
Status 1 = Erase / Program suspended
0 = Normal Protection Map
Complement nonvolatile and 1 = Inverted Protection Map
6 CMP 0
Protect Volatile versions See Table 20 on page 54 and Table 21 on page 55
for protection ranges.
5 LB3 0 OTP Lock Bits 3:0 for Security Registers 3:0
4 LB2 0 0 = Security Register not protected
Security
Register OTP 1 = Security Register protected
3 LB1 0 Security register 0 contains the Serial Flash
Lock Bits
Discoverable Parameters and is always
2 LB0 1

n
programmed and locked by Cypress.

ig
0 = Quad Mode Not Enabled, the WP# pin and
0

es
HOLD# are enabled
(For all model
1 = Quad Mode Enabled, the IO2 and IO3 pins are

D
numbers
enabled, and WP# and HOLD# functions are
1 QE Quad Enable except ‘Q1’)

ew
disabled
1 1 = Quad Mode Enabled and can not be changed,
rN
nonvolatile and
Volatile versions (For model the IO2 and IO3 pins are enabled, and WP# and
number ‘Q1’) HOLD# functions are disabled
fo

0 = SRP1 selects whether WP# input has effect on

ed

Status protection of the status register

0 SRP1 Register 0 1 = SRP1 selects Power Supply Lock Down or OTP
d

Protect 1 Lock Down mode

en

See Table on page 58.

m

Note
om

20. LB0 value should be considered don't care for read. This bit is set to 1.

Table 17. Status Register-3 (SR3)

ec

Bits Field Name Function Type Default State Description

R

7 RFU Reserved 0 Reserved for Future Use

ot

6 W6 1 00 = 8-byte wrap. Data read starts at the initial address

N

and wraps within an aligned 8-byte boundary.

01 = 16-byte wrap. Data read starts at the initial address
Burst Wrap and wraps within an aligned 16-byte boundary.
5 W5 Length 1 10 = 32-byte wrap. Data read starts at the initial address
and wraps within an aligned 32-byte boundary.
11 = 64-byte wrap. Data read starts at the initial address
and wraps within an aligned 64-byte boundary.
Volatile
Burst Wrap 0 = Wrap Enabled
4 W4 1
Enable 1 = Wrap Disabled
3 0
Defines the number of read latency cycles in Fast Read,
2 Latency Variable Read 0 Dual Out, Quad Out, Dual IO, and Quad IO commands.
1 Control (LC) Latency Control 0 Binary values for 1 to 15 latency cycles. A value of zero
disables the variable latency mode.
0 0

Document Number: 002-00497 Rev. *I Page 51 of 90

 S25FL116K/S25FL132K/S25FL164K

8.5.1 BUSY
BUSY is a read only bit in the Status Register (SR1[0]) that is set to a 1 state when the device is executing a Page Program, Sector
Erase, Block Erase, Chip Erase, Write Status Registers or Erase / Program Security Register command. During this time the device
will ignore further commands except for the Software Reset, Read Status Register and Erase / Program Suspend commands (see
tW, tPP, tSE, tBE, and tCE in Section 5.8 AC Electrical Characteristics on page 25). When the program, erase or write status / security
register command has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further commands.

8.5.2 Write Enable Latch (WEL)

Write Enable Latch (WEL) is a read only bit in the Status Register (SR1[1]) that is set to 1 after executing a Write Enable Command.
The WEL status bit is cleared to 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the
following commands: Write Disable, Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Registers, Erase Security
Register and Program Security Register. The WEL status bit is cleared to 0 even when a program or erase operation is prevented by
the block protection bits. The WEL status bit is also cleared to 0 when a program or erase operation is suspended. The WEL status
bit is set to 1 when a program or erase operation is resumed.

n
8.5.3 Block Protect Bits (BP2, BP1, BP0)

ig
The Block Protect Bits (BP2, BP1, BP0) are nonvolatile read / write bits in the Status Register (SR1[4:2]) that provide Write

es
Protection control and status. Block Protect bits can be set using the Write Status Registers Command (see tW in Section 5.8 AC
Electrical Characteristics on page 25). All, none or a portion of the memory array can be protected from Program and Erase

D
commands (see Section 8.5.7 Block Protection Maps on page 53). The factory default setting for the Block Protection Bits is 0 (none
of the array is protected.)

ew
rN
8.5.4 Top / Bottom Block Protect (TB)
The nonvolatile Top / Bottom bit (TB SR1[5]) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the
fo

Bottom (TB=1) of the array as shown in Section 8.5.7 Block Protection Maps on page 53. The factory default setting is TB=0. The TB
bit can be set with the Write Status Registers Command depending on the state of the SRP0, SRP1 and WEL bits.
ed

8.5.5 Sector / Block Protect (SEC)

d

The nonvolatile Sector / Block Protect bit (SEC SR1[6]) controls if the Block Protect Bits (BP2, BP1, BP0) protect either 4-kB Sectors
en

(SEC=1) or 64-kB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in Section 8.5.7 Block Protection
m

Maps on page 53. The default setting is SEC=0.

om

8.5.6 Complement Protect (CMP)

The Complement Protect bit (CMP SR2[6]) is a nonvolatile read / write bit in the Status Register (SR2[6]). It is used in conjunction
ec

with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array
R

protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For instance, when CMP=0, a top 4-kB sector can be protected
while the rest of the array is not; when CMP=1, the top 4-kB sector will become unprotected while the rest of the array become read-
ot

only. Refer to Section 8.5.7 Block Protection Maps on page 53 for details. The default setting is CMP=0.
N

Document Number: 002-00497 Rev. *I Page 52 of 90

 S25FL116K/S25FL132K/S25FL164K

8.5.7 Block Protection Maps

Table 18. FL116K Block Protection (CMP = 0)
Status Register [21] S25FL1-K (16 Mbit) Block Protection (CMP=0) [22]
Protected
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Density Protected Portion
X X 0 0 0 None None None None
0 0 0 0 1 31 1F0000h – 1FFFFFh 64 kB Upper 1/32
0 0 0 1 0 30 and 31 1E0000h – 1FFFFFh 128 kB Upper 1/16
0 0 0 1 1 28 thru 31 1C0000h – 1FFFFFh 256 kB Upper 1/8
0 0 1 0 0 24 thru 31 180000h – 1FFFFFh 512 kB Upper 1/4
0 0 1 0 1 16 thru 31 100000h – 1FFFFFh 1 MB Upper 1/2
0 1 0 0 1 0 000000h – 00FFFFh 64 kB Lower 1/32

n
0 1 0 1 0 0 and 1 000000h – 01FFFFh 128 kB Lower 1/16

ig
0 1 0 1 1 0 thru 3 000000h – 03FFFFh 256 kB Lower 1/8

es
0 1 1 0 0 0 thru 7 000000h – 07FFFFh 512 kB Lower 1/4

D
0 1 1 0 1 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/2

ew
X X 1 1 X 0 thru 31 000000h – 1FFFFFh 2 MB All
1 0 0 0 1 31 1FF000h – 1FFFFFh 4 kB Upper 1/512
rN
1 0 0 1 0 31 1FE000h – 1FFFFFh 8 kB Upper 1/256
1 0 0 1 1 31 1FC000h – 1FFFFFh 16 kB Upper 1/128
fo

1 0 1 0 X 31 1F8000h – 1FFFFFh 32 kB Upper 1/64

ed

1 1 0 0 1 0 000000h – 000FFFh 4 kB Lower 1/512

d

1 1 0 1 0 0 000000h – 001FFFh 8 kB Lower 1/256

en

1 1 0 1 1 0 000000h – 003FFFh 16 kB Lower 1/128

m

1 1 1 0 X 0 000000h – 007FFFh 32 kB Lower 1/64

om

Notes
21. X = don’t care.
ec

22. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
R

Table 19. FL116K Block Protection (CMP = 1)

ot

Status Register [23] S25FL1-K (16 Mbit) Block Protection (CMP=1) [24]
N

SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Protected Protected Portion
Density
X X 0 0 0 0 thru 31 000000h – 1FFFFFh All All
0 0 0 0 1 0 thru 30 000000h – 1EFFFFh 1,984 kB Lower 31/32
0 0 0 1 0 0 thru 29 000000h – 1DFFFFh 1,920 kB Lower 15/16
0 0 0 1 1 0 thru 27 000000h – 1BFFFFh 1,792 kB Lower 7/8
0 0 1 0 0 0 thru 23 000000h – 17FFFFh 1,536 kB Lower 3/4
0 0 1 0 1 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/2
0 1 0 0 1 1 thru 31 010000h – 1FFFFFh 1,984 kB Upper 31/32
0 1 0 1 0 2 and 31 020000h – 1FFFFFh 1,920 kB Upper 15/16
0 1 0 1 1 4 thru 31 040000h – 1FFFFFh 1,792 kB Upper 7/8
0 1 1 0 0 8 thru 31 080000h – 1FFFFFh 1,536 kB Upper 3/4
0 1 1 0 1 16 thru 31 100000h – 1FFFFFh 1 MB Upper 1/2
X X 1 1 X None None None None
1 0 0 0 1 0 thru 31 000000h – 1FEFFFh 2,044 kB Lower 511/512

Document Number: 002-00497 Rev. *I Page 53 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 19. FL116K Block Protection (CMP = 1) (Continued)

Status Register [23] S25FL1-K (16 Mbit) Block Protection (CMP=1) [24]
1 0 0 1 0 0 thru 31 000000h – 1FDFFFh 2,040 kB Lower 255/256
1 0 0 1 1 0 thru 31 000000h – 1FBFFFh 2,032 kB Lower 127/128
1 0 1 0 X 0 thru 31 000000h – 1F7FFFh 2,016 kB Lower 63/64
1 1 0 0 1 0 thru 31 001000h – 1FFFFFh 2,044 kB Upper 511/512
1 1 0 1 0 0 thru 31 002000h – 1FFFFFh 2,040 kB Upper 255/256
1 1 0 1 1 0 thru 31 004000h – 1FFFFFh 2,032 kB Upper 127/128
1 1 1 0 X 0 thru 31 008000h – 1FFFFFh 2,016 kB Upper 63/64

Notes
23. X = don’t care.
24. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.

n
Table 20. FL132K Block Protection (CMP = 0)

ig
Status Register [25] S25FL132K (32-Mbit) Block Protection (CMP=0) [26]

es
Protected

D
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Density Protected Portion
X X 0 0 0 None None None None

ew
0 0 0 0 1 63 3F0000h – 3FFFFFh
rN 64 kB Upper 1/64
0 0 0 1 0 62 and 63 3E0000h – 3FFFFFh 128 kB Upper 1/32
0 0 0 1 1 60 thru 63 3C0000h – 3FFFFFh 256 kB Upper 1/16
fo

0 0 1 0 0 56 thru 63 380000h – 3FFFFFh 512 kB Upper 1/8

ed

0 0 1 0 1 48 thru 63 300000h – 3FFFFFh 1 MB Upper 1/4

d

0 0 1 1 0 32 thru 63 200000h – 3FFFFFh 2 MB Upper 1/2

en

0 1 0 0 1 0 000000h – 00FFFFh 64 kB Lower 1/64

m

0 1 0 1 0 0 and 1 000000h – 01FFFFh 128 kB Lower 1/32

om

0 1 0 1 1 0 thru 3 000000h – 03FFFFh 256 kB Lower 1/16

0 1 1 0 0 0 thru 7 000000h – 07FFFFh 512 kB Lower 1/8
ec

0 1 1 0 1 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/4

R

0 1 1 1 0 0 thru 31 000000h – 1FFFFFh 2 MB Lower 1/2

X X 1 1 1 0 thru 63 000000h – 3FFFFFh 4 MB All
ot

1 0 0 0 1 63 3FF000h – 3FFFFFh 4 kB Upper 1/1024

N

1 0 0 1 0 63 3FE000h – 3FFFFFh 8 kB Upper 1/512

1 0 0 1 1 63 3FC000h – 3FFFFFh 16 kB Upper 1/256
1 0 1 0 X 63 3F8000h – 3FFFFFh 32 kB Upper 1/128
1 1 0 0 1 0 000000h – 000FFFh 4 kB Lower 1/1024
1 1 0 1 0 0 000000h – 001FFFh 8 kB Lower 1/512
1 1 0 1 1 0 000000h – 003FFFh 16 kB Lower 1/256
1 1 1 0 X 0 000000h – 007FFFh 32 kB Lower 1/128

Notes
25. X = don’t care.
26. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.

Document Number: 002-00497 Rev. *I Page 54 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 21. FL132K Block Protection (CMP = 1)

Status Register [27] S25FL132K (32-Mbit) Block Protection (CMP=1) [28]
Protected
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Density Protected Portion
X X 0 0 0 0 thru 63 000000h – 3FFFFFh 4 MB All
0 0 0 0 1 0 thru 62 000000h – 3EFFFFh 4,032 kB Lower 63/64
0 0 0 1 0 0 and 61 000000h – 3DFFFFh 3,968 kB Lower 31/32
0 0 0 1 1 0 thru 59 000000h – 3BFFFFh 3,840 kB Lower 15/16
0 0 1 0 0 0 thru 55 000000h – 37FFFFh 3,584 kB Lower 7/8
0 0 1 0 1 0 thru 47 000000h – 2FFFFFh 3 MB Lower 3/4
0 0 1 1 0 0 thru 31 000000h – 1FFFFFh 2 MB Lower 1/2
0 1 0 0 1 1 thru 63 010000h – 3FFFFFh 4,032 kB Upper 63/64

n
0 1 0 1 0 2 and 63 020000h – 3FFFFFh 3,968 kB Upper 31/32

ig
0 1 0 1 1 4 thru 63 040000h – 3FFFFFh 3,840 kB Upper 15/16

es
0 1 1 0 0 8 thru 63 080000h – 3FFFFFh 3,584 kB Upper 7/8

D
0 1 1 0 1 16 thru 63 100000h – 3FFFFFh 3 MB Upper 3/4

ew
0 1 1 1 0 32 thru 63 200000h – 3FFFFFh 2 MB Upper 1/2
X X 1 1 1 None None None None
rN
1 0 0 0 1 0 thru 63 000000h – 3FEFFFh 4,092 kB Lower 1023/1024
fo

1 0 0 1 0 0 thru 63 000000h – 3FDFFFh 4,088 kB Lower 511/512

1 0 0 1 1 0 thru 63 000000h – 3FBFFFh 4,080 kB Lower 255/256
ed

1 0 1 0 X 0 thru 63 000000h – 3F7FFFh 4,064 kB Lower 127/128

d

1 1 0 0 1 0 thru 63 001000h – 3FFFFFh 4,092 kB Upper 1023/1024

en

1 1 0 1 0 0 thru 63 002000h – 3FFFFFh 4,088 kB Upper 511/512

m

1 1 0 1 1 0 thru 63 004000h – 3FFFFFh 4,080 kB Upper 255/256

om

1 1 1 0 X 0 thru 63 008000h – 3FFFFFh 4,064 kB Upper 127/128

ec

Notes
27. X = don’t care.
R

28. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
ot

Table 22. FL164K Block Protection (CMP = 0)

N

Status Register [29] S25FL164K (64-Mbit) Block Protection (CMP=0) [30]

Protected
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Density Protected Portion
X X 0 0 0 None None None None
0 0 0 0 1 126 and 127 7E0000h – 7FFFFFh 128 kB Upper 1/64
0 0 0 1 0 124 thru 127 7C0000h – 7FFFFFh 256 kB Upper 1/32
0 0 0 1 1 120 thru 127 780000h – 7FFFFFh 512 kB Upper 1/16
0 0 1 0 0 112 thru 127 700000h – 7FFFFFh 1 MB Upper 1/8
0 0 1 0 1 96 thru 127 600000h – 7FFFFFh 2 MB Upper 1/4
0 0 1 1 0 64 thru 127 400000h – 7FFFFFh 4 MB Upper 1/2
0 1 0 0 1 0 and 1 000000h – 01FFFFh 128 kB Lower 1/64
0 1 0 1 0 0 thru 3 000000h – 03FFFFh 256 kB Lower 1/32
0 1 0 1 1 0 thru 7 000000h – 07FFFFh 512 kB Lower 1/16

Document Number: 002-00497 Rev. *I Page 55 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 22. FL164K Block Protection (CMP = 0) (Continued)

Status Register [29] S25FL164K (64-Mbit) Block Protection (CMP=0) [30]
Protected
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Density Protected Portion
0 1 1 0 0 0 thru 15 000000h – 0FFFFFh 1 MB Lower 1/8
0 1 1 0 1 0 thru 31 000000h – 1FFFFFh 2 MB Lower 1/4
0 1 1 1 0 0 thru 63 000000h – 3FFFFFh 4 MB Lower 1/2
X X 1 1 1 0 thru 127 000000h – 7FFFFFh 8 MB ALL
1 0 0 0 1 127 7FF000h – 7FFFFFh 4 kB Upper 1/2048
1 0 0 1 0 127 7FE000h – 7FFFFFh 8 kB Upper 1/1024
1 0 0 1 1 127 7FC000h – 7FFFFFh 16 kB Upper 1/512
1 0 1 0 X 127 7F8000h – 7FFFFFh 32 kB Upper 1/256

n
1 1 0 0 1 0 000000h – 000FFFh 4 kB Lower1/2048

ig
es
1 1 0 1 0 0 000000h – 001FFFh 8 kB Lower 1/1024
1 1 0 1 1 0 000000h – 003FFFh 16 kB Lower 1/512

D
1 1 1 0 X 0 000000h – 007FFFh 32 kB Lower 1/256

ew
Notes
rN
29. X = don’t care.
30. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
fo
d ed
en
m
om
ec
R
ot
N

Document Number: 002-00497 Rev. *I Page 56 of 90

 S25FL116K/S25FL132K/S25FL164K

Table 23. FL164K Block Protection (CMP = 1)

Status Register [31] S25FL164K (64-Mbit) Block Protection (CMP=1) [32]
Protected
SEC TB BP2 BP1 BP0 Protected Block(s) Protected Addresses Density Protected Portion
X X 0 0 0 0 thru 127 000000h – 7FFFFFh 8 MB ALL
0 0 0 0 1 0 thru 125 000000h – 7DFFFFh 8,064 kB Lower 63/64
0 0 0 1 0 0 thru 123 000000h – 7BFFFFh 7,936 kB Lower 31/32
0 0 0 1 1 0 thru 119 000000h – 77FFFFh 7,680 kB Lower 15/16
0 0 1 0 0 0 thru 111 000000h – 6FFFFFh 7 MB Lower 7/8
0 0 1 0 1 0 thru 95 000000h – 5FFFFFh 5 MB Lower 3/4
0 0 1 1 0 0 thru 63 000000h – 3FFFFFh 4 MB Lower 1/2

n
0 1 0 0 1 2 thru 127 020000h – 7FFFFFh 8,064 kB Upper 63/64

ig
0 1 0 1 0 4 thru 127 040000h – 7FFFFFh 7,936 kB Upper 31/32

es
0 1 0 1 1 8 thru 127 080000h – 7FFFFFh 7,680 kB Upper 15/16

D
0 1 1 0 0 16 thru 127 100000h – 7FFFFFh 7 MB Upper 7/8

ew
0 1 1 0 1 32 thru 127 200000h – 7FFFFFh 5 MB Upper 3/4
0 1 1 1 0 64 thru 127 400000h – 7FFFFFh 4 MB Upper 1/2
rN
X X 1 1 1 None None None None
fo

1 0 0 0 1 0 thru 127 000000h – 7FEFFFh 8,188 kB Lower 2047/2048

ed

1 0 0 1 0 0 thru 127 000000h – 7FDFFFh 8,184 kB Lower 1023/1024

1 0 0 1 1 0 thru 127 000000h – 7FBFFFh 8,176 kB Lower 511/512
d
en

1 0 1 0 X 0 thru 127 000000h – 7F7FFFh 8,160 kB Lower 255/256

1 1 0 0 1 0 thru 127 001000h – 7FFFFFh 8,188 kB Lower 2047/2048
m

1 1 0 1 0 0 thru 127 002000h – 7FFFFFh 8,184 kB Lower 1023/1024

om

1 1 0 1 1 0 thru 127 004000h – 7FFFFFh 8,176 kB Lower 511/512

ec

1 1 1 0 X 0 thru 127 008000h – 7FFFFFh 8,160 kB Lower 255/256

R

Notes
ot

31. X = don’t care.

32. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
N

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 S25FL116K/S25FL132K/S25FL164K

8.5.8 Status Register Protect (SRP1, SRP0)

The Status Register Protect bits (SRP1 and SRP0) are nonvolatile read / write bits in the Status Register (SR2[0] and SR1[7]). The
SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down, or one time
programmable (OTP) protection.
Status Register Protection Bits
SRP1 SRP0 WP# Status Register Description
WP# pin has no control. SR1 and SR2 can be written to after a Write
0 0 X Software Protection
Enable command, WEL=1. [Factory Default]
When WP# pin is low the SR1 and SR2 are locked and can not be
0 1 0 Hardware Protected
written.
When WP# pin is high SR1 and SR2 are unlocked and can be written
0 1 1 Hardware Unprotected
to after a Write Enable command, WEL=1.
Power Supply Lock- SR1 and SR2 are protected and can not be written to again until the
1 0 X
Down next power-down, power-up cycle. [33]

n
ig
1 1 X One Time Program [34] SR1 and SR2 are permanently protected and can not be written.

es
Notes

D
33. When SRP1, SRP0 = (1, 0), a power-down, power-up, or Software Reset cycle will change SRP1, SRP0 to (0, 0) state.
34. The One-Time Program feature is available upon special order. Contact Cypress for details.

ew
35. Busy, WEL, and SUS (SR1[1:0] and SR2[7]) are volatile read only status bits that are never affected by the Write Status Registers command.
36. The nonvolatile version of CMP, QE, SRP1, SRP0, SEC, TB, and BP2-BP0 (SR2[6,1,0] and SR1[6:2]) bits and the OTP LB3-LB0 bits are not writable when protected
by the SRP bits and WP# as shown in the table. The nonvolatile version of these Status Register bits are selected for writing when the Write Enable (06h) command
rN
precedes the Write Status Registers (01h) command.
37. The volatile version of CMP, QE, SRP1, SRP0, SEC, TB, and BP2-BP0 (SR2[6,1,0] and SR1[6:2]) bits are not writable when protected by the SRP bits and WP# as
shown in the table. The volatile version of these Status Register bits are selected for writing when the Write Enable for volatile Status Register (50h) command precedes
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the Write Status Registers (01h) command. There is no volatile version of the LB3-LB0 bits and these bits are not affected by a volatile Write Status Registers command.
38. The volatile SR3 bits are not protected by the SRP bits and may be written at any time by volatile (50h) Write Enable command preceding the Write Status Registers
ed

(01h) command.

8.5.9 Erase / Program Suspend Status (SUS)

d

The Suspend Status bit is a read only bit in the status register (SR2[7]) that is set to 1 after executing an Erase / Program Suspend
en

(75h) command. The SUS status bit is cleared to 0 by Erase / Program Resume (7Ah) command as well as a power-down, power-up
m

cycle.
om

8.5.10 Security Register Lock Bits (LB3, LB2, LB1, LB0)

The Security Register Lock Bits (LB3, LB2, LB1, LB0) are nonvolatile One Time Program (OTP) bits in Status Register (SR2[5:2])
ec

that provide the write protect control and status to the Security Registers. The default state of LB[3:1] is 0, Security Registers 1 to 3
are unlocked. LB[3:1] can be set to 1 individually using the Write Status Registers command. LB[3:1] are One Time Programmable
R

(OTP), once it’s set to 1, the corresponding 256-byte Security Register will become read-only permanently.
ot

Security Register 0 is programmed with the SFDP parameters and LB0 is programmed to 1 by Cypress.
N

8.5.11 Quad Enable (QE)

The Quad Enable (QE) bit is a nonvolatile read / write bit in the Status Register (SR2[1]) that allows Quad SPI operation. When the
QE bit is set to a 0 state (factory default), the WP# pin and HOLD# are enabled. When the QE bit is set to a 1, the Quad IO2 and IO3
pins are enabled, and WP# and HOLD# functions are disabled.
Note: If the WP# or HOLD# pins are tied directly to the power supply or ground during standard SPI or Dual SPI operation, the QE
bit should never be set to a 1.

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 S25FL116K/S25FL132K/S25FL164K

8.5.12 Latency Control (LC)

Status Register-3 provides bits (SR3[3:0]) to select the number of read latency cycles used in each Fast Read command. The Read
Data command is not affected by the latency code. The binary value of this field selects from 1 to 15 latency cycles. The zero value
selects the legacy number of latency cycles used in prior generation FL-K family devices. The default is 0 cycles to provide
backward compatibility to legacy devices. The Latency Control bits may be set to select a number of read cycles optimized for the
frequency in use. If the number of latency cycles is not sufficient for the operating frequency, invalid data will be read.
Table 24. Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
Read Command Maximum Frequency (MHz)
Latency Control
Fast Read Dual Output Dual I/O Quad Output Quad I/O
0 108 108 88 108 78
(legacy read latency) (8 dummy) (8 dummy) (4 mode, 0 dummy) (8 dummy) (2 mode, 4 dummy)
1 50 50 94 43 49
2 95 85 105 56 59

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3 105 95 108 70 69

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4 108 105 108 83 78

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5 108 108 108 94 86

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6 108 108 108 105 95

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7 108 108 108 108 105
8 108 108 108 108 108
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9 108 108 108 108 108
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10 108 108 108 108 108

ed

11 108 108 108 108 108

12 108 108 108 108 108
d
en

13 108 108 108 108 108

m

14 108 108 108 108 108

om

15 108 108 108 108 108

ec

Notes
39. SCK frequency > 108 MHz SIO, 108 MHz DIO, or 108 MHz QIO is not supported by this family of devices.
R

40. The Dual I/O and Quad I/O command protocols include Continuous Read Mode bits following the address. The clock cycles for these bits are not counted as part of
the latency cycles shown in the table. Example: the legacy Dual I/O command has four Continuous Read Mode bits following the address and no additional dummy
ot

cycles. Therefore, the legacy Dual I/O command without additional read latency is supported only up to the frequency shown in the table for a read latency of zero
cycles. By increasing the variable read latency the frequency of the Dual I/O command can be increased to allow operation up to the maximum supported 108 MHz
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DIO frequency.

8.5.13 Burst Wrap Enable (W4)

Status Register-3 provides a bit (SR3[4]) to enable a read with wrap option for the Quad I/O Read command. When SR3[4]=1, the
wrap mode is not enabled and unlimited length sequential read is performed. When SR3[4]=0, the wrap mode is enabled and a fixed
length and aligned group of 8, 16, 32, or 64 bytes will be read starting at the byte address provided by the Quad I/O Read command
and wrapping around at the group alignment boundary.

8.5.14 Burst Wrap Length (W6, W5)

Status Register-3 provides bits (SR3[1:0]) to select the alignment boundary at which reading will wrap to perform a cache line fill.
Reading begins at the initial byte address of a Fast Read Quad IO command, then sequential bytes are read until the selected
boundary is reached. Reading then wraps to the beginning of the selected boundary. This enables critical word first cache line refills.
The wrap point can be aligned on 8-, 16-, 32-, or 64-byte boundaries.

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 S25FL116K/S25FL132K/S25FL164K

8.6 Device Identification

8.6.1 Legacy Device Identification Commands

Three legacy commands are supported to access device identification that can indicate the manufacturer, device type, and capacity
(density). The returned data bytes provide the information as shown in Table 25.
Table 25. Device Identification
Device OPN Instruction Data 1 Data 2 Data 3
[41]
ABh Device ID = 14h — —
S25FL116K 90h[42] Manufacturer ID = 01h Device ID = 14h —
9Fh[43] Manufacturer ID = 01h Device Type = 40h Capacity = 15h
[41]
ABh Device ID = 15h — —
[42]
S25FL132K 90h Manufacturer ID = 01h Device ID = 15h —
9Fh[43] Manufacturer ID = 01h Device Type = 40h Capacity = 16h

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ig
ABh[41] Device ID = 16h — —

es
[42]
S25FL164K 90h Manufacturer ID = 01h Device ID = 16h —

D
[43]
9Fh Manufacturer ID = 01h Device Type = 40h Capacity = 17h

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Notes rN
41. The ABh instruction is followed by three dummy address bytes then the output of Device ID byte. See Section 29 Command Set (ID, Security Commands) on page 65
and Section 10.5.2 Release from Deep-Power-Down / Device ID (ABh) on page 78.
42. The 90h instruction is followed by three address bytes with (Address = 0) followed by the output of Manufacturer ID byte then the Device ID byte See Section 29
Command Set (ID, Security Commands) on page 65. and Section 10.5.3 Read Manufacturer / Device ID (90h) on page 79.
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43. The 9Fh instruction is followed by the output of the Manufacturer ID byte then Device ID byte then the Capacity byte. See Section 29 Command Set (ID, Security
Commands) on page 65 and Section 10.5.4 Read JEDEC ID (9Fh) on page 79.
ed

8.6.2 Serial Flash Discoverable Parameters (SFDP)

d

A Read SFDP (5Ah) command to read a JEDEC standard (JESD216) defined device information structure is supported. The
en

information is stored in Security Register 0 and described in Section 8.4 Security Register 0 — Serial Flash Discoverable
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Parameters (SFDP — JEDEC JESD216B) on page 39.

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ec
R
ot
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 S25FL116K/S25FL132K/S25FL164K

9. Functional Description
9.1 SPI Operations

9.1.1 Standard SPI Commands

The S25FL1-K is accessed through an SPI compatible bus consisting of four signals: Serial Clock (SCK), Chip Select (CS#), Serial
Data Input (SI) and Serial Data Output (SO). Standard SPI commands use the SI input pin to serially write instructions, addresses or
data to the device on the rising edge of SCK. The SO output pin is used to read data or status from the device on the falling edge
SCK.
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3 concerns the normal
state of the SCK signal when the SPI bus master is in standby and data is not being transferred to the serial flash. For Mode 0, the
SCK signal is normally low on the falling and rising edges of CS#. For Mode 3, the SCK signal is normally high on the falling and
rising edges of CS#.

9.1.2 Dual SPI Commands

n
The S25FL1-K supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast Read Dual I/O (BBh)”

ig
commands. These commands allow data to be transferred to or from the device at two to three times the rate of ordinary serial flash

es
devices. The Dual SPI Read commands are ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for
executing non-speed-critical code directly from the SPI bus (XIP). When using Dual SPI commands, the SI and SO pins become

D
bidirectional I/O pins: IO0 and IO1.

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9.1.3 Quad SPI Commands
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The S25FL1-K supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, and “Fast Read Quad I/O (EBh)”
commands. These commands allow data to be transferred to or from the device four to six times the rate of ordinary serial flash. The
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Quad Read commands offer a significant improvement in continuous and random access transfer rates allowing fast code-
shadowing to RAM or execution directly from the SPI bus (XIP). When using Quad SPI commands the SI and SO pins become
ed

bidirectional IO0 and IO1, and the WP# and HOLD# pins become IO2 and IO3 respectively. Quad SPI commands require the
d

nonvolatile or volatile Quad Enable bit (QE) in Status Register-2 to be set.

en

9.1.4 Hold Function

m

For Standard SPI and Dual SPI operations, the HOLD# (IO3) signal allows the device interface operation to be paused while it is
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actively selected (when CS# is low). The Hold function may be useful in cases where the SPI data and clock signals are shared with
other devices. For example, if the page buffer is only partially written when a priority interrupt requires use of the SPI bus, the Hold
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function can save the state of the interface and the data in the buffer so programming command can resume where it left off once
the bus is available again. The Hold function is only available for standard SPI and Dual SPI operation, not during Quad SPI.
R

To initiate a Hold condition, the device must be selected with CS# low. A Hold condition will activate on the falling edge of the
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HOLD# signal if the SCK signal is already low. If the SCK is not already low the Hold condition will activate after the next falling edge
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of SCK. The Hold condition will terminate on the rising edge of the HOLD# signal if the SCK signal is already low. If the SCK is not
already low the Hold condition will terminate after the next falling edge of SCK. During a Hold condition, the Serial Data Output, (SO)
or IO0 and IO1, are high impedance and Serial Data Input, (SI) or IO0 and IO1, and Serial Clock (SCK) are ignored. The Chip Select
(CS#) signal should be kept active (low) for the full duration of the Hold operation to avoid resetting the internal logic state of the
device.

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 S25FL116K/S25FL132K/S25FL164K

9.2 Write Protection

Applications that use nonvolatile memory must take into consideration the possibility of noise and other adverse system conditions
that may compromise data integrity. To address this concern, the S25FL1-K provides several means to protect the data from
inadvertent program or erase.

9.2.1 Write Protect Features

 Device resets when VCC is below threshold
 Time delay write disable after Power-Up
 Write enable / disable commands and automatic write disable after erase or program
 Command length protection
❐ All commands that Write, Program or Erase must complete on a byte boundary (CS# driven high after a full 8 bits have been
clocked) otherwise the command will be ignored
 Software and Hardware write protection using Status Register control

n
WP# input protection

ig
❐

Lock Down write protection until next power-up or Software Reset

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❐

❐ One-Time Program (OTP) write protection

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 Write Protection using the Deep Power-Down command

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Upon power-up or at power-down, the S25FL1-K will maintain a reset condition while VCC is below the threshold value of VWI, (see
Figure 18. Power-Up Timing and Voltage Levels on page 24). While reset, all operations are disabled and no commands are
rN
recognized. During power-up and after the VCC voltage exceeds VWI, all program and erase related commands are further disabled
for a time delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
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Registers commands. Note that the chip select pin (CS#) must track the VCC supply level at power-up until the VCC-min level and
ed

tVSL time delay is reached. If needed a pull-up resistor on CS# can be used to accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write Enable Latch (WEL) set to
d

a 0. A Write Enable command must be issued before a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status
en

Registers command will be accepted. After completing a program, erase or write command the Write Enable Latch (WEL) is
m

automatically cleared to a write-disabled state of 0.

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Software controlled main flash array write protection is facilitated using the Write Status Registers command to write the Status
Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC,TB, BP2, BP1 and BP0) bits.
ec

The BP method allows a portion as small as 4-kB sector or the entire memory array to be configured as read only. Used in
R

conjunction with the Write Protect (WP#) pin, changes to the Status Register can be enabled or disabled under hardware control.
SeeStatus Registers on page 50. for further information.
ot

Additionally, the Deep Power-Down (DPD) command offers an alternative means of data protection as all commands are ignored
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during the DPD state, except for the Release from Deep-Power-Down (RES ABh) command. Thus, preventing any program or erase
during the DPD state.

9.3 Status Registers

The Read and Write Status Registers commands can be used to provide status and control of the flash memory device.

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 S25FL116K/S25FL132K/S25FL164K

10. Commands
The command set of the S25FL1-K is fully controlled through the SPI bus (see Table 26 to Table 29 on page 65). Commands are
initiated with the falling edge of Chip Select (CS#). The first byte of data clocked into the SI input provides the instruction code. Data
on the SI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Commands vary in length from a single byte to several bytes. Each command begins with an instruction code and may be followed
by address bytes, a mode byte, read latency (dummy / don’t care) cycles, or data bytes. Commands are completed with the rising
edge of edge CS#. Clock relative sequence diagrams for each command are included in the command descriptions. All read
commands can be completed after any data bit. However, all commands that Write, Program or Erase must complete on a byte
boundary (CS# driven high after a full 8 bits have been clocked) otherwise the command will be ignored. This feature further protects
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, all commands except for Read
Status Register and Suspend commands will be ignored until the program or erase cycle has completed. When the Status Register
is being written, all commands except for Read Status Register will be ignored until the Status Register write operation has
completed.
Table 26. Command Set (Configuration, Status, Erase, Program Commands [44])

n
BYTE 1

ig
Command Name (Instruction) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6

es
[45] [47]
Read Status Register-1 05h SR1[7:0]

D
Read Status Register-2 35h SR2[7:0] [45] [47]

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Read Status Register-3 33h SR3[7:0] [45]
Write Enable 06h
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Write Enable for Volatile Status
50h
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Register
Write Disable 04h
ed

Write Status Registers 01h SR1[7:0] SR2[7:0] SR3[7:0]

d

Set Burst with Wrap 77h xxh xxh xxh SR3[7:0] [46]
en

Set Block / Pointer Protection

39h A23–A16 A15–A10, x, x xxh
m

(S25FL132K / S25FL164K)
om

Page Program 02h A23–A16 A15–A8 A7–A0 D7–D0

Sector Erase (4 kB) 20h A23–A16 A15–A8 A7–A0
ec

Block Erase (64 kB) D8h A23–A16 A15–A8 A7–A0

R

Chip Erase C7h / 60h

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Erase / Program Suspend 75h

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Erase / Program Resume 7Ah

Notes
44. Data bytes are shifted with Most Significant Bit First. Byte fields with data in brackets ‘[]’ indicate data being read from the device on the SO pin.
45. Status Register contents will repeat continuously until CS# terminates the command.
46. Set Burst with Wrap Input format to load SR3. See Table 17 on page 51.
IO0 = x, x, x, x, x, x, W4, x]
IO1 = x, x, x, x, x, x, W5, x]
IO2 = x, x, x, x, x, x, W6 x]
IO3 = x, x, x, x, x, x, x,x
47. When changing the value of any single bit, read all other bits and rewrite the same value to them.

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 S25FL116K/S25FL132K/S25FL164K

Table 27. Command Set (Read Commands)

BYTE 1
Command Name (Instruction) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Read Data 03h A23–A16 A15–A8 A7–A0 (D7–D0, …)
Fast Read 0Bh A23–A16 A15–A8 A7–A0 dummy (D7–D0, …)
Fast Read Dual Output 3Bh A23–A16 A15–A8 A7–A0 dummy (D7–D0, …) [48]
Fast Read Quad Output 6Bh A23–A16 A15–A8 A7–A0 dummy (D7–D0, …) [50]
A7–A0, M7–
Fast Read Dual I/O BBh A23–A8 [49] (D7–D0, …) [48]
M0 [49]
A23–A0, (x,x,x,x,
Fast Read Quad I/O EBh (D7–D0, …) [50]
M7–M0 [51] D7–D0, …) [52]
Continuous Read Mode
FFh FFh
Reset [53]

n
ig
es
Notes
48. Dual Output data

D
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)

ew
49. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
50. Quad Output Data
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IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
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IO3 = (D7, D3, …..)

51. Quad Input Address
ed

IO0 = A20, A16, A12, A8, A4, A0, M4, M0

IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
d

IO3 = A23, A19, A15, A11, A7, A3, M7, M3

en

52. Fast Read Quad I/O Data

IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
m

IO2 = (x, x, x, x, D6, D2, …..)

IO3 = (x, x, x, x, D7, D3, …..)
om

53. This command is recommended when using the Dual or Quad “Continuous Read Mode” feature. See Section 10.4.3 and Section 10.4.3 on page 76 for more information.
ec

Table 28. Command Set (Reset Commands)

R

Byte 1
Command Name (Instruction) Byte 2 Byte 3 Byte 4 Byte 5 Byte 6
ot

Software Reset Enable 66h

N

Software Reset 99h

[54]
Continuous Read Mode Reset FFh FFh

Note
54. This command is recommended when using the Dual or Quad “Continuous Read Mode” feature. See Section 10.4.3 and Section 10.4.3 on page 76 for more information.

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 S25FL116K/S25FL132K/S25FL164K

Table 29. Command Set (ID, Security Commands)

BYTE 1
Command Name (Instruction) BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
Deep Power-down B9h
Release Power down / Device
ABh dummy dummy dummy Device ID [55]
ID
Manufacturer / Device ID [56] 90h A23–A16 A15–A8 A7–A0 Manufacturer Device ID
JEDEC ID 9Fh Manufacturer Memory Type Capacity
Read SFDP Register /
5Ah 00h 00h A7–A0 dummy (D7–D0, …)
Read Unique ID Number
Read Security Registers [57] 48h A23–A16 A15–A8 A7–A0 dummy (D7–D0, …)
Erase Security Registers [57] 44h A23–A16 A15–A8 A7–A0

n
Program Security Registers

ig
[57] 42h A23–A16 A15–A8 A7–A0 D7–D0, …

es
Notes

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55. The Device ID will repeat continuously until CS# terminates the command.

ew
56. See Section 8.6.1 Legacy Device Identification Commands on page 60 for Device ID information. The 90h instruction is followed by an address. Address = 0 selects
Manufacturer ID as the first returned data as shown in the table. Address = 1 selects Device ID as the first returned data followed by Manufacturer ID.
57. Security Register Address:
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Security Register 0: A23-16 = 00h; A15-8 = 00h; A7-0 = byte address
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
fo
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address

Security Register 0 is used to store the SFDP parameters and is always programmed and locked by Cypress.
ed

10.1 Configuration and Status Commands

d
en

10.1.1 Read Status Registers (05h), (35h), (33h)

The Read Status Register commands allow the 8-bit Status Registers to be read. The command is entered by driving CS# low and
m

shifting the instruction code “05h” for Status Register-1, “35h” for Status Register-2, or 33h for Status Register-3, into the SI pin on
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the rising edge of SCK. The Status Register bits are then shifted out on the SO pin at the falling edge of SCK with most significant bit
(MSB) first as shown in Figure 30. The Status Register bits are shown in Section 8.5 Status Registers on page 50.
ec

The Read Status Register-1 (05h) command may be used at any time, even while a Program, Erase, or Write Status Registers cycle
R

is in progress. This allows the BUSY status bit to be checked to determine when the operation is complete and if the device can
accept another command. The Read Status Register-2 (35h), and Read Status Registers (33h) may be used only when the device
ot

is in standby, not busy with an embedded operation.

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Status Registers can be read continuously as each repeated data output delivers the updated current value of each status register.
Example: using the instruction code “05h” for Read Status Register-1, the first output of eight bits may show the device is busy,
SR1[0]=1. By continuing to hold CS# low, the updated value of SR1 will be shown in the next byte output. This repeated reading of
SR1can continue until the system detects the Busy bit has changed back to ready status in one of the status bytes being read out.
The Read Status Register commands are completed by driving CS# high.

Figure 30. Read Status Register Command Sequence Diagram for 05h and 35h
CS#

SCK

SI 7 6 5 4 3 2 1 0

SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

Phase Instruction Status Updated Status

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 S25FL116K/S25FL132K/S25FL164K

Figure 31. Read Status Register-3 Command Sequence Diagram for 33h — S25FL132K / S25FL164K

CS#

SCK

SI 7 6 5 4 3 2 1 0

SO 7 6 5 4 3 2 1 0 23 22 21 20 11 10 9 8

Phase Instruction Status Pointer Address

10.1.2 Write Enable (06h)

The Write Enable command (Figure 32) sets the Write Enable Latch (WEL) bit in the Status Register to a 1. The WEL bit must be set
prior to every Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Registers and Erase / Program Security
Registers command. The Write Enable command is entered by driving CS# low, shifting the instruction code “06h” into the Data
Input (SI) pin on the rising edge of SCK, and then driving CS# high.

n
ig
Figure 32. Write Enable (WREN 06h) Command Sequence

es
CS#

D
SCK

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SI 7 6 5 4 3 2 1 0

SO
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Phase Instruction
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ed

10.1.3 Write Enable for Volatile Status Register (50h)

The nonvolatile Status Register bits described in Section 8.5 Status Registers on page 50 can also be written to as volatile bits.
d

During power up reset, the nonvolatile Status Register bits are copied to a volatile version of the Status Register that is used during
en

device operation. This gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status Register nonvolatile bits. To write the
m

volatile version of the Status Register bits, the Write Enable for Volatile Status Register (50h) command must be issued and
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immediately followed by the Write Status Registers (01h) command. Write Enable for Volatile Status Register command (Figure 33)
will not set the Write Enable Latch (WEL) bit, it is only valid for the next following Write Status Registers command, to change the
ec

volatile Status Register bit values.

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Figure 33. Write Enable for Volatile Status Register Command Sequence
ot

CS#
N

SCK

SI 7 6 5 4 3 2 1 0

SO

Phase Instruction

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 S25FL116K/S25FL132K/S25FL164K

10.1.4 Write Disable (04h)

The Write Disable command resets the Write Enable Latch (WEL) bit in the Status Register to a 0. The Write Disable command is
entered by driving CS# low, shifting the instruction code “04h” into the SI pin and then driving CS# high. Note that the WEL bit is
automatically reset after Power-up and upon completion of the Write Status Registers, Erase / Program Security Registers, Page
Program, Sector Erase, Block Erase and Chip Erase commands.

Figure 34. Write Disable (WRDI 04h) Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0

SO

Phase Instruction

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10.1.5 Write Status Registers (01h)

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The Write Status Registers command allows the Status Registers to be written. Only nonvolatile Status Register bits SRP0, SEC,

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TB, BP2, BP1, BP0 (SR1[7:2]) CMP, LB3, LB2, LB1, QE, SRP1 (SR2[6:0]), and the volatile bits SR3[6:0] can be written. All other
Status Register bit locations are read-only and will not be affected by the Write Status Registers command. LB3-0 are nonvolatile

D
OTP bits; once each is set to 1, it can not be cleared to 0. The Status Register bits are shown in Section 8.5 Status Registers on
page 50. Any reserved bits should only be written to their default value.

ew
To write nonvolatile Status Register bits, a standard Write Enable (06h) command must previously have been executed for the
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device to accept the Write Status Registers Command (Status Register bit WEL must equal 1). Once write enabled, the command is
entered by driving CS# low, sending the instruction code “01h”, and then writing the Status Register data bytes as illustrated in
fo

Figure 35.
ed

To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) command must have been executed prior to
the Write Status Registers command (Status Register bit WEL remains 0). However, SRP1 and LB3, LB2, LB1, LB0 can not be
d

changed because of the OTP protection for these bits. Upon power-off, the volatile Status Register bit values will be lost, and the
en

nonvolatile Status Register bit values will be restored when power on again.
m

To complete the Write Status Registers command, the CS# pin must be driven high after the eighth bit of a data value is clocked in
(CS# must be driven high on an 8-bit boundary). If this is not done the Write Status Registers command will not be executed. If CS#
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is driven high after the eighth clock the CMP and QE bits will be cleared to 0 if the SRP1 bit is 0. The SR2 bits are unaffected if SRP1
is 1. If CS# is driven high after the eighth or sixteenth clock, the SR3 bits will not be affected.
ec

During nonvolatile Status Register write operation (06h combined with 01h), after CS# is driven high at the end of the Write Status
R

Registers command, the self-timed Write Status Registers operation will commence for a time duration of tW (see Section 5.8 AC
ot

Electrical Characteristics on page 25). While the Write Status Registers operation is in progress, the Read Status Register command
may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Registers operation and a 0
N

when the operation is finished and ready to accept other commands again. After the Write Status Registers operation has finished,
the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after CS# is driven high at the end of the Write Status
Registers command, the Status Register bits will be updated to the new values within the time period of tSHSL2 (see Section 5.8 AC
Electrical Characteristics on page 25). BUSY bit will remain 0 during the Status Register bit refresh period. Refer to Section 8.5
Status Registers on page 50 for detailed Status Register bit descriptions.

Figure 35. Write Status Registers Command Sequence Diagram

CS#

SCK

SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

SO

Phase Instruction Input Status Register-1 Input Status Register-2 Input Status Register-3

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10.2 Program and Erase Commands

10.2.1 Page Program (02h)

The Page Program command allows from one byte to 256 bytes (a page) of data to be programmed at previously erased (FFh)
memory locations. A Write Enable command must be executed before the device will accept the Page Program Command (Status
Register bit WEL= 1). The command is initiated by driving the CS# pin low then shifting the instruction code “02h” followed by a 24-
bit address (A23-A0) and at least one data byte, into the SI pin. The CS# pin must be held low for the entire length of the command
while data is being sent to the device. The Page Program command sequence is shown in Figure 36. Page Program Command
Sequence on page 68.
If an entire 256-byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. If the
last address byte is not zero, and the number of clocks exceed the remaining page length, the addressing will wrap to the beginning
of the page. In some cases, less than 256 bytes (a partial page) can be programmed without having any effect on other bytes within
the same page. One condition to perform a partial page program is that the number of clocks can not exceed the remaining page
length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously
sent data.

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As with the write and erase commands, the CS# pin must be driven high after the eighth bit of the last byte has been latched. If this

ig
is not done the Page Program command will not be executed. After CS# is driven high, the self-timed Page Program command will

es
commence for a time duration of tPP (Section 5.8 AC Electrical Characteristics on page 25). While the Page Program cycle is in

D
progress, the Read Status Register command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1
during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other commands

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again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Page
Program command will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and
rN
BP0) bits.
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Figure 36. Page Program Command Sequence

CS#
ed

SCK
d

SI 7 6 5 4 3 2 1 0 23 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
en

SO
m

Phase Instruction Address Input Data1 Input Data2

om
ec

10.2.2 Sector Erase (20h)

The Sector Erase command sets all memory within a specified sector (4 kbytes) to the erased state of all 1’s (FFh). A Write Enable
R

command must be executed before the device will accept the Sector Erase command (Status Register bit WEL must equal 1). The
command is initiated by driving the CS# pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0)
ot

SeeSupply and Signal Ground (VSS) on page 10. The Sector Erase command sequence is shown in Figure 37 on page 69.
N

The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Sector Erase command
will not be executed. After CS# is driven high, the self-timed Sector Erase command will commence for a time duration of tSE.
Section 5.8 AC Electrical Characteristics on page 25 While the Sector Erase cycle is in progress, the Read Status Register
command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other commands again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase command will not be executed if
the addressed sector is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (Table 20, FL132K Block
Protection (CMP = 0) on page 54).

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 S25FL116K/S25FL132K/S25FL164K

Figure 37. Sector Erase Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO

Phase Instruction Address

10.2.3 64-kB Block Erase (D8h)

The Block Erase command sets all memory within a specified block (64 kbytes) to the erased state of all 1s (FFh). A Write Enable
command must be executed before the device will accept the Block Erase command (Status Register bit WEL must equal 1). The
command is initiated by driving the CS# pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0)
SeeSupply and Signal Ground (VSS) on page 10. The Block Erase command sequence is shown in Figure 38.
The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Block Erase command
will not be executed. After CS# is driven high, the self-timed Block Erase command will commence for a time duration of tBE (see

n
Section 5.8 AC Electrical Characteristics on page 25). While the Block Erase cycle is in progress, the Read Status Register

ig
command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and

es
becomes a 0 when the cycle is finished and the device is ready to accept other commands again. After the Block Erase cycle has

D
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase command will not be executed if the
addressed sector is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Section 8.5 Status Registers on

ew
page 50). rN
Figure 38. 64-kB Block Erase Command Sequence
fo

CS#
ed

SCK

SI 7 6 5 4 3 2 1 0 23 1 0
d
en

SO
m

Phase Instruction Address

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10.2.4 Chip Erase (C7h / 60h)

ec

The Chip Erase command sets all memory within the device to the erased state of all 1’s (FFh). A Write Enable command must be
executed before the device will accept the Chip Erase command (Status Register bit WEL must equal 1). The command is initiated
R

by driving the CS# pin low and shifting the instruction code “C7h” or “60h”. The Chip Erase command sequence is shown in
ot

Figure 39.
N

The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase command will not be
executed. After CS# is driven high, the self-timed Chip Erase command will commence for a time duration of tCE (Section 5.8 AC
Electrical Characteristics on page 25). While the Chip Erase cycle is in progress, the Read Status Register command may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and
the device is ready to accept other commands again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase command will not be executed if any page is protected by the Block Protect (CMP,
SEC, TB, BP2, BP1, and BP0) bits (see Section 8.5 Status Registers on page 50).

Figure 39. Chip Erase Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0

SO

Phase Instruction

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 S25FL116K/S25FL132K/S25FL164K

10.2.5 Erase / Program Suspend (75h)

The Erase / Program Suspend command allows the system to interrupt a Sector or Block Erase operation, then read from or
program data to any other sector. The Erase / Program Suspend command also allows the system to interrupt a Page Program
operation and then read from any other page or erase any other sector or block. The Erase / Program Suspend command sequence
is shown in Figure 40. Erase / Program Suspend Command Sequence on page 71.
The Write Status Registers command (01h), Program Security Registers (42h), and Erase commands (20h, D8h, C7h, 60h, 44h) are
not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If written during the Chip
Erase operation, the Erase Suspend command is ignored. The Write Status Registers command (01h), Erase Security Registers
(44h), and Program commands (02h, 32h, 42h) are not allowed during Program Suspend. Program Suspend is valid only during the
Page Program operation.
Table 30. Commands Accepted During Suspend
Operation Suspended Command Allowed Instruction
Program or Erase Read Data 03h
Program or Erase Fast Read 0Bh

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ig
Program or Erase Fast Read Dual Output 3Bh

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Program or Erase Fast Read Quad Output 6Bh

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Program or Erase Fast Read Dual I/O BBh

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Program or Erase Fast Read Quad I/O EBh
Program or Erase Continuous Read Mode Reset FFh
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Program or Erase Read Status Register-1 05h
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Program or Erase Read Status Register-2 35h

Program or Erase Write Enable 06h
ed

Erase Page Program 02h

d

Program Sector Erase 20h

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Program Block Erase D8h

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Program or Erase Erase / Program Resume 7Ah

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The Erase / Program Suspend command 75h will be accepted by the device only if the SUS bit in the Status Register equals to 0
ec

and the BUSY bit equals to 1 while a Sector or Block Erase or a Page Program operation is on-going. If the SUS bit equals to 1 or
R

the BUSY bit equals to 0, the Suspend command will be ignored by the device. Program or Erase command for the sector that is
being suspended will be ignored.
ot

A maximum of time of tSUS (Section 5.8 AC Electrical Characteristics on page 25) is required to suspend the erase or program
N

operation. The BUSY bit in the Status Register will be cleared from 1 to 0 within tSUS and the SUS bit in the Status Register will be
set from 0 to 1 immediately after Erase / Program Suspend. For a previously resumed Erase / Program operation, it is also required
that the Suspend command 75h is not issued earlier than a minimum of time of tSUS following the preceding Resume command 7Ah.
Unexpected power off during the Erase / Program suspend state will reset the device and release the suspend state. SUS bit in the
Status Register will also reset to 0. The data within the page, sector or block that was being suspended may become corrupted. It is
recommended for the user to implement system design techniques to prevent accidental power interruption, provide nonvolatile
tracking of in process program or erase commands, and preserve data integrity by evaluating the nonvolatile program or erase
tracking information during each system power up in order to identify and repair (re-erase and re-program) any improperly
terminated program or erase operations.

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 S25FL116K/S25FL132K/S25FL164K

Figure 40. Erase / Program Suspend Command Sequence

tSUS

CS#

SCK

SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

SO 7 6 5 4 3 2 1 0

Phase Suspend Instruction Read Status Instruction Status Instr. During Suspend

Phase Repeat Status Read Until Suspended

10.2.6 Erase / Program Resume (7Ah)

The Erase / Program Resume command “7Ah” must be written to resume the Sector or Block Erase operation or the Page Program
operation after an Erase / Program Suspend. The Resume command “7Ah” will be accepted by the device only if the SUS bit in the
Status Register equals to 1 and the BUSY bit equals to 0. After the Resume command is issued the SUS bit will be cleared from 1 to
0 immediately, the BUSY bit will be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation or the

n
page will complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume command “7Ah” will be

ig
ignored by the device. The Erase / Program Resume command sequence is shown in Figure 41.

es
It is required that a subsequent Erase / Program Suspend command not to be issued within a minimum of time of “tSUS” following a
Resume command.

D
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Figure 41. Erase / Program Resume Command Sequence
CS#
rN
SCK
fo

SI 7 6 5 4 3 2 1 0
ed

SO
d

Phase Instruction
en
m

10.3 Read Commands

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10.3.1 Read Data (03h)

The Read Data command allows one or more data bytes to be sequentially read from the memory. The command is initiated by
ec

driving the CS# pin low and then shifting the instruction code “03h” followed by a 24-bit address (A23-A0) into the SI pin. The code
R

and address bits are latched on the rising edge of the SCK pin. After the address is received, the data byte of the addressed memory
location will be shifted out on the SO pin at the falling edge of SCK with most significant bit (MSB) first. The address is automatically
ot

incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. This means
N

that the entire memory can be accessed with a single command as long as the clock continues. The command is completed by
driving CS# high.
The Read Data command sequence is shown in Figure 42. If a Read Data command is issued while an Erase, Program or Write
cycle is in process (BUSY=1) the command is ignored and will not have any effects on the current cycle. The Read Data command
allows clock rates from DC to a maximum of fR (see Section 5.8 AC Electrical Characteristics on page 25).

Figure 42. Read Data Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0

Phase Instruction Address Data 1 Data 2

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 S25FL116K/S25FL132K/S25FL164K

10.3.2 Fast Read (0Bh)

The Fast Read command is similar to the Read Data command except that it can operate at higher frequency than the traditional
Read Data command. This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 43. The
dummy clocks allow the devices internal circuits additional time for setting up the initial address. During the dummy clocks the data
value on the SI pin is a “don’t care.”
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 59.

Figure 43. Fast Read Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO

n
7 6 5 4 3 2 1 0

ig
Phase Instruction Address Dummy Cycles Data 1

es
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10.3.3 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) command is similar to the standard Fast Read (0Bh) command except that data is output on two

ew
pins; IO0 and IO1. This allows data to be transferred from the S25FL1-K at twice the rate of standard SPI devices. The Fast Read
Dual Output command is ideal for quickly downloading code from flash to RAM upon power-up or for applications that cache code-
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segments to RAM for execution.
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Similar to the Fast Read command, the Fast Read Dual Output command can operate at higher frequency than the traditional Read
Data command. This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 44. The dummy
ed

clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care.” However, the IO0 pin should be high-impedance prior to the falling edge of the first data out clock.
d
en

When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
m

on page 59.
om

Figure 44. Fast Read Dual Output Command Sequence

ec

CS#
R

SCK
ot
N

IO0 7 6 5 4 3 2 1 0 23 22 21 0 6 4 2 0 6 4 2 0
IO1 7 5 3 1 7 5 3 1
Phase Instruction Address Dummy Data 1 Data 2

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 S25FL116K/S25FL132K/S25FL164K

10.3.4 Fast Read Quad Output (6Bh)

The Fast Read Quad Output (6Bh) command is similar to the Fast Read Dual Output (3Bh) command except that data is output on
four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be executed before the device will accept the Fast Read
Quad Output Command (Status Register bit QE must equal 1). The Fast Read Quad Output Command allows data to be transferred
from the S25FL1-K at four times the rate of standard SPI devices.
The Fast Read Quad Output command can operate at higher frequency than the traditional Read Data command. This is
accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 45. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care.” However, the
IO pins should be high-impedance prior to the falling edge of the first data out clock.
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 59.

Figure 45. Fast Read Quad Output Command Sequence

CS#

n
ig
SCK

es
IO0 7 6 5 4 3 2 1 0 23 1 0 4 0 4 0 4 0 4 0 4 0 4

IO1

D
5 1 5 1 5 1 5 1 5 1 5

IO2 6 2 6 2 6 2 6 2 6 2 6

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IO3 rN 7 3 7 3 7 3 7 3 7 3 7

Phase Instruction Address Dummy D1 D2 D3 D4 D5

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10.3.5 Fast Read Dual I/O (BBh)

ed

The Fast Read Dual I/O (BBh) command allows for improved random access while maintaining two IO pins, IO0 and IO1. It is similar
to the Fast Read Dual Output (3Bh) command but with the capability to input the Address bits (A23-0) two bits per clock. This
d

reduced command overhead may allow for code execution (XIP) directly from the Dual SPI in some applications.
en

Fast Read Dual I/O with “Continuous Read Mode”

m

The Fast Read Dual I/O command can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0)
om

after the input Address bits (A23-0), as shown in Figure 46. The upper nibble of the (M7-4) controls the length of the next Fast Read
Dual I/O command through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
ec

care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
R

If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O command (after CS# is raised and then lowered)
does not require the BBh instruction code, as shown in Figure 47. This reduces the command sequence by eight clocks and allows
ot

the Read address to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to
N

(1,0), the next command (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal
operation. A “Continuous Read Mode” Reset command can also be used to reset (M7-0) before issuing normal commands (see
SeeContinuous Read Mode Reset (FFh or FFFFh) on page 76.).
When variable read latency is enabled, the number of latency (Mode + Dummy) cycles is set by the Latency Control value in SR3 to
optimize the latency for the frequency in use. See Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to
3.6V on page 59. Note that the legacy Read Dual I/O command has four Mode cycles and no Dummy cycles for a total of four
latency cycles, Enabling the variable read latency allows for the addition of more read latency to enable higher frequency operation
of the Dual I/O command.

Figure 46. Fast Read Dual I/O Command Sequence (Initial command or previous M5-4  10)

CS#

SCK

IO0 7 6 5 4 3 2 1 0 22 2 0 6 4 2 0 6 4 2 0 6 4 2 0

IO1 23 3 1 7 5 3 1 7 5 3 1 7 5 3 1

Phase Instruction Address Mode Dummy Data 1 Data 2

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 S25FL116K/S25FL132K/S25FL164K

Note
58. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.

Figure 47. Fast Read Dual I/O Command Sequence (Previous command set M5-4 = 10)

CS#

SCK

IO0 6 4 2 0 22 2 0 6 4 2 0 6 4 2 0 6 4 2 0

IO1 7 5 3 1 23 3 1 7 5 3 1 7 5 3 1 7 5 3 1

Phase Data N Address Mode Dummy Data 1 Data 2

10.3.6 Fast Read Quad I/O (EBh)

The Fast Read Quad I/O (EBh) command is similar to the Fast Read Dual I/O (BBh) command except that address and data bits are

n
input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy clock are required prior to the data output. The Quad I/O

ig
dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The

es
Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Command.

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Fast Read Quad I/O with “Continuous Read Mode”

ew
The Fast Read Quad I/O command can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0)
after the input Address bits (A23-0), as shown in Figure 48. Fast Read Quad I/O Command Sequence (Initial command or previous
rN
M5-4 10) on page 74. The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O command through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins
fo

should be high-impedance prior to the falling edge of the first data out clock.
ed

If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O command (after CS# is raised and then lowered)
does not require the EBh instruction code, as shown in Figure 49. Fast Read Quad I/O Command Sequence (Previous command
d

set M5-4 = 10) on page 75. This reduces the command sequence by eight clocks and allows the Read address to be immediately
en

entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next command (after CS# is
raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode”
m

Reset command can also be used to reset (M7-0) before issuing normal commands (see Section 10.4.3 Continuous Read Mode
om

Reset (FFh or FFFFh) on page 76).

When variable read latency is enabled, the number of latency (Mode + Dummy) cycles is set by the Latency Control value in SR3 to
ec

optimize the latency for the frequency in use. See. Table 24, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to
R

3.6V on page 59. Note that the legacy Read Quad I/O command has two Mode cycles plus four Dummy cycles for a total of six
latency cycles, Enabling the variable read latency allows for the addition of more read latency to enable higher frequency operation
ot

of the Quad I/O command.

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Figure 48. Fast Read Quad I/O Command Sequence (Initial command or previous M5-4 10)
CS#

SCK

IO0 7 6 5 4 3 2 1 0 20 4 0 4 0 4 0 4 0 4 0 4 0

IO1 21 5 1 5 1 5 1 5 1 5 1 5 1

IO2 22 6 2 6 2 6 2 6 2 6 2 6 2

IO3 23 7 3 7 3 7 3 7 3 7 3 7 3

Phase Instruction Address Mode Dummy D1 D2 D3 D4

Note
59. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.

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 S25FL116K/S25FL132K/S25FL164K

Figure 49. Fast Read Quad I/O Command Sequence (Previous command set M5-4 = 10)
CS#

SCK

IO0 4 0 4 0 20 4 0 4 0 4 0 4 0 6 4 2 0

IO1 5 1 5 1 21 5 1 5 1 5 1 5 1 7 5 3 1

IO2 6 2 6 2 22 6 2 6 2 6 2 6 1 7 5 3 1

IO3 7 3 7 3 23 7 3 7 3 7 3 7 1 7 5 3 1

Phase DN-1 DN Address Mode Dummy D1 D2 D3 D4

Fast Read Quad I/O with “16 / 32 / 64-Byte Wrap Around”

The Fast Read Quad I/O command can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap”
command prior to EBh. The “Set Burst with Wrap” command can either enable or disable the “Wrap Around” feature for the following

n
EBh commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 16 / 32 / 64-byte section of

ig
data. The output data starts at the initial address specified in the command, once it reaches the ending boundary of the 16 / 32 / 64-

es
byte section, the output will wrap around to the beginning boundary automatically until CS# is pulled high to terminate the command.

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The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards
within a fixed length (16 / 32 / 64-bytes) of data without issuing multiple read commands.

ew
The “Set Burst with Wrap” command allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap
Around” operation while W6-5 are used to specify the length of the wrap around section within a page. See Section 10.3.7 Set Burst
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with Wrap (77h) on page 75.
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10.3.7 Set Burst with Wrap (77h)

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The Set Burst with Wrap (77h) command is used in conjunction with “Fast Read Quad I/O” commands to access a fixed length and
alignment of 8 / 16 / 32 / 64-bytes of data. Certain applications can benefit from this feature and improve the overall system code
d

execution performance. This command loads the SR3 bits.

en

Similar to a Quad I/O command, the Set Burst with Wrap command is initiated by driving the CS# pin low and then shifting the
m

instruction code “77h” followed by 24-dummy bits and 8 “Wrap Bits”, W7-0. The command sequence is shown in Figure 50. Set
om

Burst with Wrap Command Sequence on page 75. Wrap bit W7 and the lower nibble W3-0 are not used. See Status Register-3
(SR3[6:4]) for the encoding of W6-W4 in Section 8.5 Status Registers on page 50.
ec

Once W6-4 is set by a Set Burst with Wrap command, all the following “Fast Read Quad I/O” commands will use the W6-4 setting to
access the 8 / 16 / 32 / 64-byte section of data. Note, Status Register-2 QE bit (SR2[1]) must be set to 1 in order to use the Fast
R

Read Quad I/O and Set Burst with Wrap commands. To exit the “Wrap Around” function and return to normal read operation,
ot

another Set Burst with Wrap command should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case of a
N

system Reset while W4 = 0, it is recommended that the controller issues a Software Reset command or a Set Burst with Wrap
command to reset W4 = 1 prior to any normal Read commands since S25FL1-K does not have a hardware Reset Pin.

Figure 50. Set Burst with Wrap Command Sequence

CS#

SCK

IO0 7 6 5 4 3 2 1 0 .X .X .X .X .X .X W4 .X

IO1 .X .X .X .X .X .X W5 .X

IO2 .X .X .X .X .X .X W6 .X

IO3 .X .X .X .X .X .X .X .X

Phase Instruction Don’t Care Wrap

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 S25FL116K/S25FL132K/S25FL164K

10.4 Reset Commands

Software controlled Reset commands restore the device to its initial power up state, by reloading volatile registers from nonvolatile
default values. If a software reset is initiated during a Erase, Program or writing of a Register operation the data in that Sector, Page
or Register is not stable, the operation that was interrupted needs to be initiated again.
When the device is in Deep Power-Down mode it is protected from a software reset, the software reset commands are ignored and
have no effect. To reset the device send the Release Power down command (ABh) and after time duration of tRES1 the device will
resume normal operation and the Software reset commands will be accepted.
A software reset is initiated by the Software Reset Enable command (66h) followed by Software Reset command (99h) and then
executed when CS# is brought high after tRCH time at the end of the Software Reset instruction and requires tRST time before
executing the next Instruction after the Software Reset. See Figure 26. Software Reset Input Timing on page 28
Note: The tRCH is a Cypress specific parameter and CS# must be brought high after tRCH time, if not the Software Reset will not be
executed.

Figure 51. Software Reset Command Sequence

n
CS#

ig
es
SCK

D
SI 7 6 5 4 3 2 1 0

ew
SO

Phase Instruction
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fo

10.4.1 Software Reset Enable (66h)

The Reset Enable (66h) command is required immediately before a software reset command (99h) such that a software reset is a
ed

sequence of the two commands. Any command other than Reset (99h) following the Reset Enable (66h) command, will clear the
d

reset enable condition and prevent a later RST command from being recognized.
en

10.4.2 Software Reset (99h)

m

The Reset (99h) command immediately following a Reset Enable (66h) command, initiates the software reset process. Any
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command other than Reset (99h) following the Reset Enable (66h) command, will clear the reset enable condition and prevent a
later Reset (99h) command from being recognized.
ec

10.4.3 Continuous Read Mode Reset (FFh or FFFFh)

R

The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O” and “Fast Read
ot

Quad I/O” commands to provide the highest random Flash memory access rate with minimum SPI instruction overhead, thus
allowing more efficient XIP (execute in place) with this device family. A device that is in a continuous high performance read mode
N

may not recognize any normal SPI command or the software reset command may not be recognized by the device. It is
recommended to use the Continuous Read Mode Reset command after a system Power on Reset or, before sending a software
reset, to ensure the device is released from continuous high performance read mode.
The “Continuous Read Mode” bits M7-0 are set by the Dual/Quad I/O Read commands. M5-4 are used to control whether the 8-bit
SPI instruction code (BBh or EBh) is needed or not for the next command. When M5-4 = (1,0), the next command will be treated the
same as the current Dual/Quad I/O Read command without needing the 8-bit instruction code; when M5-4 do not equal to (1,0), the
device returns to normal SPI command mode, in which all commands can be accepted. M7-6 and M3-0 are reserved bits for future
use, either 0 or 1 values can be used.
The Continuous Read Mode Reset command (FFh or FFFFh) can be used to set M4 = 1, thus the device will release the Continuous
Read Mode and return to normal SPI operation, as shown in Figure 52.

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 S25FL116K/S25FL132K/S25FL164K

Figure 52. Continuous Read Mode Reset for Fast Read Dual or Quad I/O
CS#
SCK
IO0 FFFFh
IO1
IO2
IO3
DIO_Phase Optional FFh
QIO_Phase Mode Bit Reset for Quad I/O Optional FFh

Notes
60. To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The instruction is “FFh”.
61. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are needed to shift in instruction “FFFFh”.

10.4.4 Host System Reset Commands

Since S25FL1-K does not have a hardware Reset pin, if the host system memory controller resets, without a complete power-down

n
and power-up sequence, while an S25FL1-K device is set to Continuous Mode Read, the S25FL1-K device will not recognize any

ig
initial standard SPI commands from the controller. To address this possibility, it is recommended to issue a Continuous Read Mode

es
Reset (FFFFh) command as the first command after a system Reset. Doing so will release the device from the Continuous Read

D
Mode and allow Standard SPI commands to be recognized. See Section 10.4.3 Continuous Read Mode Reset (FFh or FFFFh) on
page 76.

ew
If Burst Wrap Mode is used, it is also recommended to issue a Set Burst with Wrap (77h) command that sets the W4 bit to one as the
second command after a system Reset. Doing so will release the device from the Burst Wrap Mode and allow standard sequential
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read SPI command operation. See Section 10.3.7 Set Burst with Wrap (77h) on page 75.
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Issuing these commands immediately after a non-power-cycle (warm) system reset, ensures the device operation is consistent with
the power-on default device operation. The same commands may also be issued after device power-on (cold) reset so that system
ed

reset code is the same for warm or cold reset.

d
en
m
om
ec
R
ot
N

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 S25FL116K/S25FL132K/S25FL164K

10.5 ID and Security Commands

10.5.1 Deep-Power-Down (B9h)

Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep-Power-
Down command. The lower power consumption makes the Deep-Power-Down (DPD) command especially useful for battery
powered applications (see ICC1 and ICC2 in Section 5.8 AC Electrical Characteristics on page 25). The command is initiated by
driving the CS# pin low and shifting the instruction code “B9h” as shown in Figure 53.
The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Deep-Power-Down command will not be
executed. After CS# is driven high, the power-down state will entered within the time duration of tDP (Section 5.8 AC Electrical
Characteristics on page 25). While in the power-down state only the Release from Deep-Power-Down / Device ID command, which
restores the device to normal operation, will be recognized. All other commands are ignored. This includes the Read Status Register
command, which is always available during normal operation. Ignoring all but one command also makes the Power Down state a
useful condition for securing maximum write protection. The device always powers-up in the normal operation with the standby
current of ICC1.

n
Figure 53. Deep Power-Down Command Sequence

ig
CS#

es
SCK

D
SI 7 6 5 4 3 2 1 0

ew
SO rN
Phase Instruction
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10.5.2 Release from Deep-Power-Down / Device ID (ABh)

ed

The Release from Deep-Power-Down / Device ID command is a multi-purpose command. It can be used to release the device from
the deep-power-down state, or obtain the devices electronic identification (ID) number.
d
en

To release the device from the deep-power-down state, the command is issued by driving the CS# pin low, shifting the instruction
code “ABh” and driving CS# high as shown in Figure 54. Release from deep-power-down will take the time duration of tRES1
m

(Section 5.8 AC Electrical Characteristics on page 25) before the device will resume normal operation and other commands are
om

accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the deep power-down state, the command is initiated by driving the CS# pin low
ec

and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID bits are then shifted out on the falling edge of
R

SCK with most significant bit (MSB) first. The Device ID values for the S25FL1-K is listed in Section 8.6.1 Legacy Device
Identification Commands on page 60. The Device ID can be read continuously. The command is completed by driving CS# high.
ot

When used to release the device from the deep-power-down state and obtain the Device ID, the command is the same as previously
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described, and shown in Figure 55, except that after CS# is driven high it must remain high for a time duration of tRES2. After this
time duration the device will resume normal operation and other commands will be accepted. If the Release from Deep-Power-Down
/ Device ID command is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1) the command is ignored
and will not have any effects on the current cycle.

Figure 54. Release from Deep-Power-Down Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0

SO

Phase Instruction

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 S25FL116K/S25FL132K/S25FL164K

Figure 55. Read Electronic Signature (RES ABh) Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO 7 6 5 4 3 2 1 0

Phase Instruction (ABh) Dummy Device ID

10.5.3 Read Manufacturer / Device ID (90h)

The Read Manufacturer / Device ID command is an alternative to the Release from Deep-Power-Down / Device ID command that
provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer / Device ID command is very similar to the Release from Deep-Power-Down / Device ID command. The
command is initiated by driving the CS# pin low and shifting the instruction code “90h” followed by a 24-bit address (A23-A0) of

n
000000h. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCK with most significant bit

ig
(MSB) first as shown in Figure 56. The Device ID values for the S25FL1-K is listed in Section 8.6.1 Legacy Device Identification

es
Commands on page 60. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by the
Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The command is

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completed by driving CS# high.

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Figure 56. READ_ID (90h) Command Sequence
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CS#
fo
SCK

SI 7 6 5 4 3 2 1 0 23 1 0
ed

SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
d
en

Phase Instruction (90h) Address Manufacturer ID Device ID

m

10.5.4 Read JEDEC ID (9Fh)

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For compatibility reasons, the S25FL1-K provides several commands to electronically determine the identity of the device. The Read
JEDEC ID command is compatible with the JEDEC standard for SPI compatible serial flash memories that was adopted in 2003.
ec

The command is initiated by driving the CS# pin low and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID
R

byte and two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling edge of SCK with
most significant bit (MSB) first as shown in Figure 57. For memory type and capacity values refer to Section 8.6.1 Legacy Device
ot

Identification Commands on page 60.

N

Figure 57. Read JEDEC ID Command Sequence

CS#
SCK
SI 7 6 5 4 3 2 1 0
SO 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Phase Instruction Data 1 Data N

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 S25FL116K/S25FL132K/S25FL164K

10.5.5 Read SFDP Register / Read Unique ID Number (5Ah)

The Read SFDP command is initiated by driving the CS# pin low and shifting the instruction code “5Ah” followed by a 24-bit address
(A23-A0) into the SI pin. Eight “dummy” clocks are also required before the SFDP register contents are shifted out on the falling
edge of the 40th SCK with most significant bit (MSB) first as shown in Figure 58. For SFDP register values and descriptions, refer to
Table 8.6.2, Serial Flash Discoverable Parameters (SFDP) on page 60.
Note: A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-byte SFDP Register.
The 5Ah command can also be used to access the Read Unique ID Number. This is a factory-set read-only 8-byte number that is
unique to each S25FL1-K device. The ID number can be used in conjunction with user software methods to help prevent copying or
cloning of a system.

Figure 58. Read SFDP Register Command Sequence

CS#

SCK

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SI 7 6 5 4 3 2 1 0 23 1 0

ig
SO 7 6 5 4 3 2 1 0

es
Phase Instruction Address Dummy Cycles Data 1

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ew
10.5.6 Erase Security Registers (44h)
The Erase Security Register command is similar to the Sector Erase command. A Write Enable command must be executed before
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the device will accept the Erase Security Register Command (Status Register bit WEL must equal 1). The command is initiated by
driving the CS# pin low and shifting the instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the security
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registers.
ed

Address A23-16 A15-8 A7-0

d

Security Register-1 00h 10h xxh

en

Security Register-2 00h 20h xxh

m

Security Register-3 00h 30h xxh

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Note
ec

62. Addresses outside the ranges in the table have undefined results.
R

The Erase Security Register command sequence is shown in Figure 59. The CS# pin must be driven high after the eighth bit of the
ot

last byte has been latched. If this is not done the command will not be executed. After CS# is driven high, the self-timed Erase
Security Register operation will commence for a time duration of tSE (see Section 5.8 AC Electrical Characteristics on page 25).
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While the Erase Security Register cycle is in progress, the Read Status Register command may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is
ready to accept other commands again. After the Erase Security Register cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Security Register Lock Bits (LB3:1) in the Status Register-2 can be used to OTP protect the
security registers. Once a lock bit is set to 1, the corresponding security register will be permanently locked, and an Erase Security
Register command to that register will be ignored (see Section 8.5.10 Security Register Lock Bits (LB3, LB2, LB1, LB0) on page 58).

Figure 59. Erase Security Registers Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO

Phase Instruction Address

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 S25FL116K/S25FL132K/S25FL164K

10.5.7 Program Security Registers (42h)

The Program Security Register command is similar to the Page Program command. It allows from one byte to 256 bytes of security
register data to be programmed at previously erased (FFh) memory locations. A Write Enable command must be executed before
the device will accept the Program Security Register Command (Status Register bit WEL= 1). The command is initiated by driving
the CS# pin low then shifting the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte, into the SI
pin. The CS# pin must be held low for the entire length of the command while data is being sent to the device.

Address A23-16 A15-8 A7-0

Security Register-1 00h 10h Byte Address
Security Register-2 00h 20h Byte Address
Security Register-3 00h 30h Byte Address

Note
63. Addresses outside the ranges in the table have undefined results.

n
The Program Security Register command sequence is shown in Figure 60. The Security Register Lock Bits (LB3:1) in the Status

ig
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding security register will be

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permanently locked, and a Program Security Register command to that register will be ignored (see Section 8.5.10 Security Register

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Lock Bits (LB3, LB2, LB1, LB0) on page 58 and Section 10.2.1 Page Program (02h) on page 68 for detail descriptions).

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Figure 60. Program Security Registers Command Sequence
CS#
rN
SCK
fo

SI 7 6 5 4 3 2 1 0 23 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
ed

SO
d

Phase Instruction Address Input Data1 Input Data2

en
m

10.5.8 Read Security Registers (48h)

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The Read Security Register command is similar to the Fast Read command and allows one or more data bytes to be sequentially
read from one of the three security registers. The command is initiated by driving the CS# pin low and then shifting the instruction
code “48h” followed by a 24-bit address (A23-A0) and eight “dummy” clocks into the SI pin. The code and address bits are latched
ec

on the rising edge of the SCK pin. After the address is received, and following the eight dummy cycles, the data byte of the
R

addressed memory location will be shifted out on the SO pin at the falling edge of SCK with most significant bit (MSB) first. Locations
with address bits A23-A16 not equal to zero, have undefined data. The byte address is automatically incremented to the next byte
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address after each byte of data is shifted out. Once the byte address reaches the last byte of the register (byte FFh), it will reset to
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00h, the first byte of the register, and continue to increment. The command is completed by driving CS# high. The Read Security
Register command sequence is shown in Figure 61. If a Read Security Register command is issued while an Erase, Program, or
Write cycle is in process (BUSY=1), the command is ignored and will not have any effects on the current cycle. The Read Security
Register command allows clock rates from DC to a maximum of FR (see Section 5.8 AC Electrical Characteristics on page 25).

Address A23-16 A15-8 A7-0

Security Register-0 (SFDP) 00h 00h Byte Address
Security Register-1 00h 10h Byte Address
Security Register-2 00h 20h Byte Address
Security Register-3 00h 30h Byte Address

Note
64. Addresses outside the ranges in the table have undefined results.

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 S25FL116K/S25FL132K/S25FL164K

Figure 61. Read Security Registers Command Sequence

CS#

SCK

SI 7 6 5 4 3 2 1 0 23 1 0

SO 7 6 5 4 3 2 1 0

Phase Instruction Address Dummy Cycles Data 1

10.6 Set Block / Pointer Protection (39h) — S25FL132K and S25FL164K

The user has a choice to enable one of two protection mechanisms: block protection or pointer protection. Only one protection
mechanism can be enabled at one time.
The Set Block / Pointer Protection (39h) is a new command (see Figure 62) and is used to determine which one of the two protection
mechanisms is enabled, and if the pointer protection mechanism is enabled, determines the pointer address. The Write Enable

n
command must precede the Set Block / Pointer command.

ig
After the Set Block / Pointer Protection command is given, the value of A10 in byte 3 selects whether the block protection or the

es
pointer protection mechanism will be enabled. If A10 = 1, then the block protection mode is enabled. This is the default state, and the

D
rest of pointer values are don’t care. If A10=0, then the pointer protection is enabled, and the block protection feature is disabled.
The pointer address values A9 to A0 are don’t care.

ew
If the pointer protection mechanism is enabled, a pointer address determines the boundary between the protected and the
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unprotected regions in the memory. The format of the Set Pointer command is the 39h instruction followed by three address bytes.
For the S25FL132K, ten address bits (A21-A12) after the 39h command are used to program the nonvolatile pointer address. For
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the 32M, A23 – A22 are don’t care. For the S25FL164K, eleven address bits (A22-A12) after the 39h command are used to program
the nonvolatile pointer address. For the 64M, A23 is a don’t care.
ed

The A11 bit can be used to protect all sectors. If A11=1, then all sectors are protected, and A23 – A12 are don’t cares. If A11=0, then
d

the unprotected range will be determined by A22-A12 for the 64M and A21-A12 for the 32M. The area that is unprotected will be
en

inclusive of the 4-kB sector selected by the pointer address.

m

Bit 5 (Top / Bottom) of SR1 is used to determine whether the region that will be unprotected will start from the top (highest address)
or bottom (lowest address) of the memory array to the location of the pointer. If TB=0 and the 39h command is issued followed by a
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24-bit address, then the 4-kB sector which includes that address and all the sectors from the bottom up (zero to higher address) will
be unprotected. If TB=1 and 39h command is issued followed by a 24-bit address then the 4-kB sector which includes that address
ec

and all the sectors from the Top down (max to lower address) will be unprotected.
R

The SRP1 (SR2 [0]) and SRP0 (SR1 [7]) bits are used to protect the pointer address in the same way they protect SR1 and SR2.
When SRP1 and SRP0 protect SR1 and SR2, the 39h command is ignored. This effectively prevents changes to the protection
ot

scheme using the existing SRP1-SRP0 mechanism – including the OTP protection option.
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The 39h command is ignored during a suspend operation because the pointer address cannot be erased and re-programmed during
a suspend.

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 S25FL116K/S25FL132K/S25FL164K

The Read Status Register-3 command 33h (see Figure 31 for 33h timing diagram) reads the contents of SR3 followed by the
contents of the pointer. This allows the contents of the pointer to be read out for test and verification. The read back order is SR3,
A23-A16, A15-A8. If CS# remains low, the Bytes after A15-A8 are undefined.

Protect Address Unprotect Address

TB A11 A10 Range Range Comment
See Block Protect See Block Protect A10 = 1 the block protect protection mode is enabled (this is
x x 1
Method Method the default state and the rest of pointer address is don't care).
If TB=0 and the 39h command is issued followed by a 24-bit
Amax [65] to A<22-12> [66] address, then the 4-kB sector which includes that address
0 0 0
(A<22-12>+1) to 000000 and all the sectors from the bottom up (zero to higher
address) will be unprotected.
If TB=1 and 39h command is issued followed by a 24-bit
(A<22-12>-1) Amax [65] address then the 4-kB sector which includes that address and
1 0 0
to 000000 to A<22-12> all the sectors from the Top down (max to lower address) will
be unprotected.

n
ig
Amax [65] to A10=0 and A11 =1 means protect all sectors and Amax-A12
x 1 0 Not Applicable

es
000000 are don't care.

D
Notes

ew
65. Amax = 7FFFFFh for the FL164K, and 3FFFFFh for the FL132K.
66. A<21-12> for the FL132K.
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Block Erase: In general, if the pointer protect scheme is active (A10=0), protect all sectors is not active (A11=0), and the pointer
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address points to anywhere within the block, the whole block will be protected from Block Erase even though part of the block is
unprotected. The 2 exceptions where block erase goes through is if the pointer address points to the TOP sector of the
ed

block(A[15:12]=1111) if TB=0, and if the pointer points to the BOTTOM sector of the block (A[15:12]=0000) and TB=1.
d

Figure 62. Set Pointer Address (39h)

en

CS#
m

SCK
om

SI 7 6 5 4 3 2 1 0 23 22 21 20 19 18 17 16 15 14 13 12 11 10 X X X X X X X X X X
ec

Dummy Cycles
SO
R

Phase Instruction Address

ot
N

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 S25FL116K/S25FL132K/S25FL164K

11. Data Integrity

11.1 Erase Endurance

Erase Endurance
Parameter Min Unit
Program/Erase cycles main Flash array sector 100K PE cycle
Program/Erase cycles Security Registers nonvolatile register array [67] 1K PE cycle

Note
67. Each write command to a nonvolatile register causes a PE cycle on the entire nonvolatile register array. Re-writing registers with the same value doesn’t cause a PE
cycle. OTP bits in registers internally reside in a separate array that is not cycled.

11.2 Data Retention

n
Parameter Test Conditions Minimum Time Unit

ig
10K Program/Erase Cycles 20 Years

es
Data Retention Time
100K Program/Erase Cycles 2 Years

D
ew
11.3 Initial Delivery State
The device is shipped from Cypress with nonvolatile bits / default states set as follows:
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 The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh).
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 The Unique Device ID is programmed to a random number seeded by the date and time of device test.
ed

 The SFDP Security Register address space 0 contains the values as defined in Section 8.6.2 Serial Flash Discoverable
Parameters (SFDP) on page 60. Security Register address spaces 1 to 3 are erased: i.e. all bits are set to 1 (each byte contains
d

FFh).
en

 Status Register-1 contains 00h.

m

 Status Register-2 contains 04h.

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 Status Register-3 contains 70h.

ec
R
ot
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 S25FL116K/S25FL132K/S25FL164K

12. Ordering Information

The ordering part number is formed by a valid combination of the following:

S25FL1 32 K 0X M F I 01 1
Packing Type
0 = Tray
1 = Tube
3 = 13” Tape and Reel
Model Number (Additional Ordering Options)
00 = 16-lead SO package (300 mil)
01 = 8-lead SO package (208 mil) / 8-contact WSON
02 = 5 x 5 ball BGA package
03 = 4 x 6 ball BGA package (208 mil)
04 = 8-lead SO package (150 mil) / 8-contact USON (4 mm  4 mm)
Q1 = 8-lead SO package (208 mil) / 8-contact WSON
(Default quad mode enabled)
Temperature Range
I = Industrial (-40°C to +85°C)
V = Industrial Plus (-40°C to +105°C)

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A = Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
B = Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)

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Package Materials[68]

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F = Halogen-free, Lead (Pb)-free
H = Halogen-free, Lead (Pb)-free

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Package Type

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M = 8-lead / 16-lead SO package
N = 8-contact WSON/USON package
B = 24-ball 6  8 mm BGA package, 1.0 mm pitch
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Speed
0X = 108 MHz
fo

Device Technology
K = 90 nm floating gate process technology
ed

Density
d

16 = 16 Mbits
32 = 32 Mbits
en

64 = 64 Mbits
Device Family
m

S25FL1
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Cypress Memory 3.0 Volt-Only, Serial Peripheral Interface (SPI) Flash Memory

Note
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68. Halogen free definition is in accordance with IEC 61249-2-21.

R
ot
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Document Number: 002-00497 Rev. *I Page 85 of 90

 S25FL116K/S25FL132K/S25FL164K

Valid Combinations — Standard

Table lists standard configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.

Valid Combinations for Standard Part Numbers

Base Ordering Part Number Speed Option Package and Temperature Model Number Packing Type Package Marking
01 FL116KIF01
MFI Q1 FL116KIFQ1
04 FL116KIF4
01 FL116KVF01
MFV 0, 1, 3
04 FL116KVF4
NFI 01 FL116KIF01
FL116K 0X
Q1 FL116KIFQ1

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NFV 01 FL116KVF01

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02 FL116KIH02

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BHI
03 FL116KIH03

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0, 3
02 FL116KVH02
BHV

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03 FL116KVH03
01 FL132KIF01
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MFI 04 FL132KIF4
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Q1 FL132KIFQ1
01 FL132KVF01
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MFV
04 FL132KVF4
d

0, 1, 3
01 FL132KIF01
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NFI 04 FL132KIF04
m

FL132K 0X
Q1 FL132KIFQ1
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01 FL132KVF01
NFV
04 FL132KVF04
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02 FL132KIH02
R

BHI
03 FL132KIH03
0, 3
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02 FL132KVH02
BHV
N

03 FL132KVH03
00 FL164KIF00
MFI 01 FL164KIF01
Q1 FL164KIFQ1
00 FL164KVF00
MFV 0, 1, 3
01 FL164KVF01
01 FL164KIF01
FL164K 0X NFI
Q1 FL164KIFQ1
NFV 01 FL164KVF01
02 FL164KIH02
BHI
03 FL164KIH03
0, 3
02 FL164KVH02
BHV
03 FL164KVH03

Document Number: 002-00497 Rev. *I Page 86 of 90

 S25FL116K/S25FL132K/S25FL164K

Valid Combinations — Automotive Grade / AEC-Q100

The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The
table will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific
combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949
compliance.

Valid Combinations — Automotive Grade / AEC-Q100

Base Ordering Part Number Speed Option Package and Temperature Model Number Packing Type Package Marking

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01 FL116KAF01

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MFA Q1 FL116KAFQ1

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04 FL116KAF4

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01 FL116KBF01
MFB 0, 1, 3
04 FL116KBF4

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01 FL116KAF01
FL116K 0X NFA
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Q1 FL116KAFQ1
NFB 01 FL116KBF01
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02 FL116KAH02
BHA
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03 FL116KAH03
0, 3
d

02 FL116KBH02
BHB
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03 FL116KBH03
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01 FL132KBF01
MFB
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04 FL132KBF4
01 FL132KAF01
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NFA 04 0, 1, 3 FL132KAF04
R

Q1 FL132KAFQ1
FL132K 0X 01 FL132KBF01
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NFB
04 FL132KBF04
N

02 FL132KAH02
BHA
03 FL132KAH03
0, 3
02 FL132KBH02
BHB
03 FL132KBH03
MFB Q1 0, 1, 3 FL164KAFQ1
02 FL164KAH02
BHA
FL164K 0X 03 FL164KAH03
0, 3
02 FL164KBH02
BHB
03 FL164KBH03

Document Number: 002-00497 Rev. *I Page 87 of 90

 S25FL116K/S25FL132K/S25FL164K

13. Revision History

Document History Page
Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Orig. of Submission
Rev. ECN No. Change Date Description of Change

Initial release
Combined S25FL116K_00_06 and S25FL132K_164K_00_05
**  ASPA 04/14/2014
Global: Promoted data sheet from Preliminary to Full Production
Added 125°C option
Migration Notes: FL Generations Comparison table: corrected Sector Erase Time (typ.)
for S25FL1-K
AC Electrical Characteristics: AC Electrical Characteristics — -40°C to +85°C/105°C at
2.7V to 3.6V table: added tRCH and tRST

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Input / Output Timing: added Software Reset Input Timing figure

ig
Physical Interface: Corrected figure: 8-Contact WSON (5 mm x 6 mm) Package
*A  ASPA 10/10/2014 Security Register 0 — Serial Flash Discoverable Parameters

es
(SFDP — JEDEC JESD216B): Updated section based on revised JEDEC JESD216B
spec

D
Commands: Added Command Set (Reset Commands) table

ew
Reset Commands: Added sections: Reset Commands, Software Reset Enable (66h),
Software Reset (99h)
Updated section: Continuous Read Mode Reset (FFh or FFFFh)
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Power-Up Timing: Power-Up Timing and Voltage Levels table: corrected TPUW
*B  ASPA 12/04/2014 Valid Combinations: Valid Combinations table: corrected FL116K Model Number and
fo

Package Marking
ed

*C 4891479 BWHA 09/18/2015 Updated to Cypress template.

Added “USON 4 mm  4 mm” package related information in all instances across the
d

document.
en

Updated This product family has been retired and is not recommended for designs. For
new and current designs, S25FL064L supersede the S25FL1-K family. These are the
m

factory-recommended migration paths. Please refer to the S25FL-L Family datasheets

om

for specifications and ordering information.:

Updated Package Options.
ec

Updated Physical Interface:

Updated Connection Diagrams:
R

Updated SOIC 8:
ot

Updated Figure 27.

N

Updated SOIC 16 — S25FL164K:

Updated Figure 28.
*D 5044503 BWHA 12/18/2015 Updated WSON 8:
Updated Figure 29.
Updated FAB024 24-Ball BGA:
Updated Figure 6.1.
Updated FAC024 24-Ball BGA Package:
Updated Figure 6.2.
Updated Physical Diagrams:
Added UNF008 — 8-Contact USON 4 mm x 4 mm.
Updated Ordering Information:
Added “Halogen-free” for “F” under “Package Materials”.
Added Note “GT grade is Cypress’s quality and reliability rating to indicate products that
are tested to meet <10 ppm and intended for high reliability applications such as
automotive.” and referred the same note in “A” under “Temperature Range”.

Document Number: 002-00497 Rev. *I Page 88 of 90

 S25FL116K/S25FL132K/S25FL164K

Document History Page (Continued)

Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Rev. ECN No. Orig. of Submission Description of Change
Change Date
Added Logic Block Diagram.
Updated Electrical Characteristics:
Added Thermal Resistance.
Updated Data Integrity:
Removed “Endurance”.
Added Data Retention.
*E 5270099 BWHA 06/29/2016
Updated Ordering Information:
Updated Valid Combinations — Automotive Grade / AEC-Q100:

n
Updated Table :

ig
Added a column “Model Number”.

es
Added a row under “FL164K” and added “MFB” and its corresponding details.

D
Updated to new template.
Updated Signal Descriptions:

ew
Updated Input / Output Summary:
Update Table 1:
rN
Updated details in “Description” column corresponding to “DNU”.
fo

Updated Electrical Characteristics:

Updated Operating Ranges:
ed

Updated Table 6:
d

Removed Extended Temperature range related information.

en

Updated AC Electrical Characteristics:

Updated Table 10:
m

Added “tCS” parameter and its details.

om

Updated Physical Interface:

Updated Physical Diagrams:
ec

Updated SOA008 — 8-Lead Plastic Small Outline Package (150-mils Body Width)
R

(Updated Package Drawing to Cypress format).

Updated SOC008 — 8-Lead Plastic Small Outline Package (208-mils Body Width)
ot

*F 5645494 BWHA 02/28/2017

(Updated Package Drawing to Cypress format).
N

Updated SO3016 — 16-Lead Plastic Wide Outline Package (300-mils Body Width)
(Updated Package Drawing to Cypress format).
Updated WND008 — 8-Contact WSON 5 mm ´ 6 mm (Updated Package Drawing to
Cypress format).
Updated UNF008 — 8-Contact USON 4 mm x 4 mm (Updated Package Drawing to
Cypress format).
Updated FAB024 — 24-Ball Ball Grid Array (8 mm ´ 6 mm) Package (Updated Package
Drawing to Cypress format).
Updated FAC024 — 24-Ball Ball Grid Array (8 mm ´ 6 mm) Package (Updated Package
Drawing to Cypress format).
Updated Address Space Maps:
Updated Device Identification:
Updated Table 25:
Added Note 41 and referred the same note in “ABh” in “Instruction” column.
Added Note 42 and referred the same note in “90h” in “Instruction” column.
Added Note 43 and referred the same note in “9Fh” in “Instruction” column.

Document Number: 002-00497 Rev. *I Page 89 of 90

 S25FL116K/S25FL132K/S25FL164K

Document History Page (Continued)

Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Rev. ECN No. Orig. of Submission Description of Change
Change Date
Updated Commands:
Updated Table 29:
Updated details in “BYTE 2”, “BYTE 3” and “BYTE 4” columns corresponding to
“Manufacturer / Device ID” command.
Update Data Integrity:
Update Data Retention:
Removed “Data Retention Time Security Registers nonvolatile register array” parameter
*F (cont.) 5645494 BWHA 02/28/2017 and its details.
Updated Ordering Information:

n
ig
Updated Valid Combinations — Automotive Grade / AEC-Q100:
Updated description.

es
Removed a row corresponding to “MFI” under “FL132K”.

D
Removed rows corresponding to “MFI”, “MFV”, “NFI” and “NFV” under “FL164K”.

ew
Updated to new template.
*G 5709491 GNKK 04/25/2017 Updated the Cypress logo and copyright information.
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*H 5742469 NFB 05/19/2017 Added “Not Recommended for New Design (NRND)” status.
Updated Ordering Information section and added a note “Halogen free definition is in
fo

*I 6228963 BWHA 07/04/2018

accordance with IEC 61249-2-21”
d ed
en
m
om
ec
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ot
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Document Number: 002-00497 Rev. *I Page 90 of 90

 S25FL116K/S25FL132K/S25FL164K

Sales, Solutions, and Legal Information

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PSoC cypress.com/psoc

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Power Management ICs cypress.com/pmic

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Touch Sensing cypress.com/touch

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USB Controllers cypress.com/usb

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Wireless Connectivity cypress.com/wireless
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fo
d ed
en
m
om
ec
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© Cypress Semiconductor Corporation, 2014-2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
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TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing
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such as unauthorized access to or use of a Cypress product. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product
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Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
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Document Number: 002-00497 Rev. *I Revised July 04, 2018 Page 91 of 91