V9 08 ELectRonie Devices Ania Circuits i Equator piode qu > Lythe etpression that describes this graph is talud diode equation. Let us consicky a metal with N nwrbey of free electrons Lee DT be the wivrent and q he the charge. [| i T= Nq where ob represents, Prequenuy ay Maan velouty we L_ > t= a [sine EMohON is Fandorn] T r e Henw DT = Nig ae ce Tf 'A" Is the -cvess section area, then T= Dt | wurren cleng ty AD san Te Ngu. LA Ne cis. Al LA V- volume-s the force fell by the electrons in op, Clee "ep F:eqéema Sah, awe at Aes. QE’ m ate E or at= WE where a is called the mobility T= ng = ngMe [t: ee ]—o > gO if applied to a semiconductor oT varies depending on the extent of doping. In an intrinsic semiconductor mn = Ps om mo. L thechers mo.of holes M- intrinsic Conuntvation Due to turmal. excitation electrons and hole pairs Gre generated Cana Yevom bimedl )- — Law of mass attion : T= (bm + p up) 9¢) —@s we dope an element by bombarding its surfaw with impuntics. Venu the impurity is mostly on the guy fa dp = tonuntyahion gractien} dx Tx p Suafou < ap doe Jp = DP dp where dx Dp - Diffusion constant Tp Yemains positive Similarly for n type Tn = + q Da dn. dw Pp 4 Hepe~ 4 Pedp | —@ Farmeenima)-© de He and bd are yelated by Eimsteim's velation A = bm = Vz (volt equivalent temp eradue} Up ag Vee KT Cys box io” "/e) q at room temperature ook rrF “ Vr = a 2 0-026V cosh Ese 11,000 Supstieting, [M2 84D -® = Consrdtr & block of n type SEMICOnducto, | At too, there fs 10 radiation : Wher lig ip ig swikhed on ate radiation hits it instants for intrinsic semiconductors “ey generation = vecombination i-e., m= p The Hime taleen +7 vevombine is called mean lif, tim Tp - for holed Tm - for electrons 21-04-2023 — Current in a semiconductor = Dvifh + Diffusion due £0 dit ko Diffusion uarvent ts present only im extrinsic Semiconductors. — whin light is swith on, the perentage change Im mimor(ty Corrievs is greatr due 4o eleton hok - Patr generation: Considur an, n type semiconductor | self po intial 10. of ho ee) o mminaet ly cast) Hh pb 7 Sahwahar %] Exuss Concentration of minority CarriersSpr oF yt we AA nig. of change Spe. COWHIEAS Gavig ff gt 0 oy tart or i" Volue , ve A ane at _ chang im mumber Per suond = 4 gs tee gaa 4 A - tL 4k. 4 dw Tp q du Tpe —4 Dp ab dan dp = ~4 Dp OP at dec* ap 2 Qe Dod dé ea raat dip = peleLet us assume the Solution for second orcte ie differential equation as et ae pie) = kre Re eee. oe Sink p' decreases 4S tq) inuceases + dhe second leyvm is not valid jie, App lying boundary condition, kK, =0- As x=0 = eel =>. + pies} Susi tut ng i Pay = Pre) ii Aleo Tp =a 9.92 #) Ag be Plo? é. a (rita Ny = AG Plo é : Lp ¥ “Ny Ag bp (Pro Pt fl “p ffrr ( id rons | der ths maj 3 jority Carers in mum type semiconductor Tn = 4 bm den, dn Exus enarge carriers -ereased ’ mn ay N:% = M- : Pr Pe am. Ve fap dn - qh must are usion auyvent the majority gradient (wnun Hud -whiae ge 1 a 2 aah ng mg Ang Km; on - 7 Similarly for hole art f+ arvent Ly AT 3 Ag le Pe pus ages I (Bee) An 4qun Tue poe Pe Ip m Un Dp pn Funcom w le ug look at & Junctiom — No aah + eed ~ “ePZtotel gimu. no voltage Is Applied across the junction, Me met uarvent =O © on that of diffusion current > Equal and opposite charg “Tp qMrPE- 4 bp de Dyitt But Tq 0 sien Abe Pe = 4 dp, Ae an mE Way BleG = /Be |. 4 |—P—-|" 0. Lop) Fae lee (1 a. ee Sa Tentegr are Var Wa - Ve Im (%) Vie - Vela (Be jy 2 = lan (Pe . ®, a elm (B) Ae oe ee P2 Vv. Piet © 7 for imtvi _ Low of m —> Applying b) ass action a5 ein Tym” eat ie = wi Spatr ‘avostly Csr RAL rem ch =e Tee side. OT paicle Hole current (S hightr as it is tm forward bras’ Total wrrent = Tp, (0) + Ln pte) na Minoratey af fonon escent Lpmto) “7a = [ Pato) — For] Stemi larly Tonpio) = 4q De. [ pro) — ro] La yy Apne = Ag Pe [tn & ta Lp : = Whe = Ag Pp Im [e a i) Lp ‘ Siemilarly V/V; 1 Lyi Age My foe OF Vive B "otal vurrent [L= To (¢ where [To = AG i + Dn Mp Lp Luaen —> Im reverse bias ae 7 {Vis -ve and few ordurs of volts tv >> Vr We z é sae onl eo! 2 2-242. q - te nuntration of -I, depends on the saturation © mimority charge carries > Considering te may ovity charge carries pais